ATE345581T1 - TRIHYDROXYBENZENES TO PREVENT CORROSION OF TITANIUM - Google Patents

TRIHYDROXYBENZENES TO PREVENT CORROSION OF TITANIUM

Info

Publication number
ATE345581T1
ATE345581T1 AT01921582T AT01921582T ATE345581T1 AT E345581 T1 ATE345581 T1 AT E345581T1 AT 01921582 T AT01921582 T AT 01921582T AT 01921582 T AT01921582 T AT 01921582T AT E345581 T1 ATE345581 T1 AT E345581T1
Authority
AT
Austria
Prior art keywords
sub
titanium
sup
trihydroxybenzenes
prevent corrosion
Prior art date
Application number
AT01921582T
Other languages
German (de)
Inventor
Jerome Daviot
Stanley Affrossman
Douglas Holmes
Original Assignee
Ekc Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ekc Technology Ltd filed Critical Ekc Technology Ltd
Application granted granted Critical
Publication of ATE345581T1 publication Critical patent/ATE345581T1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D9/00—Chemical paint or ink removers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

A composition for removing resist, polymeric material and/or etching residue from a substrate comprising titanium or an alloy thereof, the composition comprising hydroxylamine or a derivative thereof and at least one compound having the general formula (I) wherein: R<SUP>1 </SUP>and R<SUP>3 </SUP>are each independently selected from H, OH, CO<SUB>2</SUB>H, halogen, C<SUB>1</SUB>-C<SUB>3 </SUB>alkyl, C<SUB>1</SUB>-C<SUB>3 </SUB>alkoxy or (CH<SUB>2</SUB>)<SUB>n</SUB>OH wherein n is 1, 2 or 3; and R<SUB>2 </SUB>is selected from C<SUB>9</SUB>-C<SUB>16 </SUB>alkyl, or C<SUB>9</SUB>-C<SUB>16 </SUB>alkoxy
AT01921582T 2000-04-12 2001-04-12 TRIHYDROXYBENZENES TO PREVENT CORROSION OF TITANIUM ATE345581T1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0009112.4A GB0009112D0 (en) 2000-04-12 2000-04-12 Inhibition of titanium corrosion

Publications (1)

Publication Number Publication Date
ATE345581T1 true ATE345581T1 (en) 2006-12-15

Family

ID=9889834

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01921582T ATE345581T1 (en) 2000-04-12 2001-04-12 TRIHYDROXYBENZENES TO PREVENT CORROSION OF TITANIUM

Country Status (11)

Country Link
US (1) US7012051B2 (en)
EP (1) EP1273033B1 (en)
JP (1) JP2003530482A (en)
KR (1) KR100889094B1 (en)
CN (1) CN1218373C (en)
AT (1) ATE345581T1 (en)
AU (1) AU4855501A (en)
DE (1) DE60124519T2 (en)
GB (1) GB0009112D0 (en)
TW (1) TWI281487B (en)
WO (1) WO2001078129A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100338530C (en) * 2001-11-02 2007-09-19 三菱瓦斯化学株式会社 Method for releasing resist
WO2010127943A1 (en) * 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
JP5159738B2 (en) * 2009-09-24 2013-03-13 株式会社東芝 Semiconductor substrate cleaning method and semiconductor substrate cleaning apparatus
US8101561B2 (en) 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
JP2017197589A (en) * 2014-09-04 2017-11-02 横浜油脂工業株式会社 Peeling agent for ultraviolet-curable paints
US10133428B2 (en) 2015-05-29 2018-11-20 Samsung Display Co., Ltd. Flexible display device including a flexible substrate having a bending part and a conductive pattern at least partially disposed on the bending part
US11175587B2 (en) * 2017-09-29 2021-11-16 Versum Materials Us, Llc Stripper solutions and methods of using stripper solutions
US11408079B2 (en) 2019-07-30 2022-08-09 King Fahd University Of Petroleum And Minerals Corrosion inhibitor composition and methods of inhibiting corrosion during acid pickling
WO2021153122A1 (en) * 2020-01-28 2021-08-05 富士フイルム株式会社 Treatment solution and method for treating treatment object

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3124614A1 (en) * 1980-06-27 1982-05-06 Amchem Products, Inc., 19002 Ambler, Pa. CLEANING SOLUTION, METHOD FOR REMOVING IMPURITIES FROM A TIN SURFACE WITH THIS CLEANING SOLUTION, AND CONCENTRATES FOR THIS
US6242400B1 (en) 1990-11-05 2001-06-05 Ekc Technology, Inc. Method of stripping resists from substrates using hydroxylamine and alkanolamine
US5981454A (en) 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US6121217A (en) 1990-11-05 2000-09-19 Ekc Technology, Inc. Alkanolamine semiconductor process residue removal composition and process
US20040018949A1 (en) 1990-11-05 2004-01-29 Wai Mun Lee Semiconductor process residue removal composition and process
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US6000411A (en) 1990-11-05 1999-12-14 Ekc Technology, Inc. Cleaning compositions for removing etching residue and method of using
US6492311B2 (en) 1990-11-05 2002-12-10 Ekc Technology, Inc. Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
US6546939B1 (en) 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US7205265B2 (en) 1990-11-05 2007-04-17 Ekc Technology, Inc. Cleaning compositions and methods of use thereof
US6187730B1 (en) 1990-11-05 2001-02-13 Ekc Technology, Inc. Hydroxylamine-gallic compound composition and process
US6110881A (en) 1990-11-05 2000-08-29 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US7144848B2 (en) 1992-07-09 2006-12-05 Ekc Technology, Inc. Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal
EP0578507B1 (en) 1992-07-09 2005-09-28 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US6825156B2 (en) 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US20030032567A1 (en) 1992-07-09 2003-02-13 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US5654260A (en) * 1994-01-10 1997-08-05 Phillips Petroleum Company Corrosion inhibitor for wellbore applications
US7534752B2 (en) 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US6323168B1 (en) 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
GB2342727A (en) * 1998-10-12 2000-04-19 Ekc Technology Ltd Composition to remove resists and tp inhibit titanium corrosion

Also Published As

Publication number Publication date
GB0009112D0 (en) 2000-05-31
KR100889094B1 (en) 2009-03-17
US7012051B2 (en) 2006-03-14
US20040106530A1 (en) 2004-06-03
WO2001078129A1 (en) 2001-10-18
AU4855501A (en) 2001-10-23
EP1273033B1 (en) 2006-11-15
TWI281487B (en) 2007-05-21
JP2003530482A (en) 2003-10-14
DE60124519T2 (en) 2007-05-31
CN1218373C (en) 2005-09-07
EP1273033A1 (en) 2003-01-08
KR20030053470A (en) 2003-06-28
DE60124519D1 (en) 2006-12-28
CN1423835A (en) 2003-06-11

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Legal Events

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