ATE78628T1 - NON-VOLATILE MEMORY. - Google Patents

NON-VOLATILE MEMORY.

Info

Publication number
ATE78628T1
ATE78628T1 AT86402196T AT86402196T ATE78628T1 AT E78628 T1 ATE78628 T1 AT E78628T1 AT 86402196 T AT86402196 T AT 86402196T AT 86402196 T AT86402196 T AT 86402196T AT E78628 T1 ATE78628 T1 AT E78628T1
Authority
AT
Austria
Prior art keywords
tunnel oxide
volatile memory
fowler
acceptability
compensate
Prior art date
Application number
AT86402196T
Other languages
German (de)
Inventor
Horst Leuschner
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Application granted granted Critical
Publication of ATE78628T1 publication Critical patent/ATE78628T1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Read Only Memory (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

An improved nonvolatile memory has an adaptive system to regulate the charging current supplied to store data on nonvolatile storage nodes in order to provide acceptability low strain on the tunnel oxide and to compensate for process variations and change in the Fowler-Nordheim tunnel oxide transport characteristics caused by electron trapping over time.
AT86402196T 1985-10-03 1986-10-03 NON-VOLATILE MEMORY. ATE78628T1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/783,493 US4685083A (en) 1985-10-03 1985-10-03 Improved nonvolatile memory circuit using a dual node floating gate memory cell
EP86402196A EP0217718B1 (en) 1985-10-03 1986-10-03 Nonvolatile memory circuit

Publications (1)

Publication Number Publication Date
ATE78628T1 true ATE78628T1 (en) 1992-08-15

Family

ID=25129433

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86402196T ATE78628T1 (en) 1985-10-03 1986-10-03 NON-VOLATILE MEMORY.

Country Status (6)

Country Link
US (1) US4685083A (en)
EP (1) EP0217718B1 (en)
JP (1) JPH0740436B2 (en)
KR (1) KR940011637B1 (en)
AT (1) ATE78628T1 (en)
DE (1) DE3686118T2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780750A (en) * 1986-01-03 1988-10-25 Sierra Semiconductor Corporation Electrically alterable non-volatile memory device
JPS6414798A (en) * 1987-07-09 1989-01-18 Fujitsu Ltd Non-volatile memory device
US4802124A (en) * 1987-08-03 1989-01-31 Sgs-Thomson Microelectronics, Inc. Non-volatile shadow storage cell with reduced tunnel device count for improved reliability
US4787066A (en) * 1987-08-03 1988-11-22 Sgs-Thomson Microelectronics, Inc. Non-volatile shadow storage cell with improved level shifting circuit and reduced tunnel device count for improved reliability
US5042009A (en) * 1988-12-09 1991-08-20 Waferscale Integration, Inc. Method for programming a floating gate memory device
US4980859A (en) * 1989-04-07 1990-12-25 Xicor, Inc. NOVRAM cell using two differential decouplable nonvolatile memory elements
US5128895A (en) * 1989-11-21 1992-07-07 Intel Corporation Method for programming a virtual ground EPROM cell including slow ramping of the column line voltage
FR2655761B1 (en) * 1989-12-07 1992-12-31 Sgs Thomson Microelectronics PROGRAMMING VOLTAGE GENERATING CIRCUIT FOR PROGRAMMABLE MEMORY.
US5175706A (en) * 1989-12-07 1992-12-29 Sgs-Thomson Microelectronics S.A. Programming voltage generator circuit for programmable memory
US5097449A (en) * 1990-03-15 1992-03-17 Vlsi Technology, Inc. Non-volatile memory structure
FR2663147A1 (en) * 1990-06-12 1991-12-13 Sgs Thomson Microelectronics PROGRAMMABLE MEMORY WITH DOUBLE TRANSISTOR WITH FLOATING GRID.
US5481492A (en) * 1994-12-14 1996-01-02 The United States Of America As Represented By The Secretary Of The Navy Floating gate injection voltage regulator
JP3569728B2 (en) * 1995-01-11 2004-09-29 直 柴田 Nonvolatile semiconductor memory device
US5940291A (en) * 1997-05-08 1999-08-17 Lucent Technologies Inc. Low-complexity adaptive controller
US6055186A (en) * 1998-10-23 2000-04-25 Macronix International Co., Ltd. Regulated negative voltage supply circuit for floating gate memory devices
JP3910765B2 (en) * 1999-09-08 2007-04-25 株式会社東芝 Voltage generation circuit and voltage transfer circuit using the same
KR100610490B1 (en) * 2005-06-17 2006-08-08 매그나칩 반도체 유한회사 ＥＥＣＲＯＭ Cells and ＥＥＲＲＯＭ blocks
US7365585B2 (en) * 2006-08-09 2008-04-29 Atmel Corporation Apparatus and method for charge pump slew rate control
KR102670947B1 (en) * 2018-08-17 2024-06-03 에스케이하이닉스 주식회사 Semiconductor memory apparatus, semiconductor system and electronic device including the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2828855C2 (en) * 1978-06-30 1982-11-18 Siemens AG, 1000 Berlin und 8000 München Non-volatile memory that can be electrically reprogrammed word by word as well as a method for deleting or writing to or in such a memory (s)
US4393481A (en) * 1979-08-31 1983-07-12 Xicor, Inc. Nonvolatile static random access memory system
US4404475A (en) * 1981-04-08 1983-09-13 Xicor, Inc. Integrated circuit high voltage pulse generator system
US4408303A (en) * 1981-12-28 1983-10-04 Mostek Corporation Directly-coupled and capacitively coupled nonvolatile static RAM cell
US4510584A (en) * 1982-12-29 1985-04-09 Mostek Corporation MOS Random access memory cell with nonvolatile storage
US4638464A (en) * 1983-11-14 1987-01-20 International Business Machines Corp. Charge pump system for non-volatile ram

Also Published As

Publication number Publication date
DE3686118T2 (en) 1992-12-17
EP0217718A2 (en) 1987-04-08
US4685083A (en) 1987-08-04
EP0217718A3 (en) 1990-05-02
KR870004453A (en) 1987-05-09
JPS6297199A (en) 1987-05-06
EP0217718B1 (en) 1992-07-22
DE3686118D1 (en) 1992-08-27
JPH0740436B2 (en) 1995-05-01
KR940011637B1 (en) 1994-12-22

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties