BE783709A - Procede de formation d'une couche enfouie par implantation d'ions - Google Patents

Procede de formation d'une couche enfouie par implantation d'ions

Info

Publication number
BE783709A
BE783709A BE783709A BE783709A BE783709A BE 783709 A BE783709 A BE 783709A BE 783709 A BE783709 A BE 783709A BE 783709 A BE783709 A BE 783709A BE 783709 A BE783709 A BE 783709A
Authority
BE
Belgium
Prior art keywords
implantation
ions
forming
buried layer
buried
Prior art date
Application number
BE783709A
Other languages
English (en)
Inventor
A U Macrae
P Miller
R A Moline
J Simpson
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE783709A publication Critical patent/BE783709A/fr

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00Highly-doped buried regions of integrated devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6304Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6322Formation by thermal treatments
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00Highly-doped buried regions of integrated devices
    • H10W15/01Manufacture or treatment
BE783709A 1971-05-24 1972-05-19 Procede de formation d'une couche enfouie par implantation d'ions BE783709A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14625271A 1971-05-24 1971-05-24

Publications (1)

Publication Number Publication Date
BE783709A true BE783709A (fr) 1972-09-18

Family

ID=22516512

Family Applications (1)

Application Number Title Priority Date Filing Date
BE783709A BE783709A (fr) 1971-05-24 1972-05-19 Procede de formation d'une couche enfouie par implantation d'ions

Country Status (11)

Country Link
JP (1) JPS5138582B1 (fr)
BE (1) BE783709A (fr)
CA (1) CA921620A (fr)
CH (1) CH535494A (fr)
DE (1) DE2224467B2 (fr)
FR (1) FR2138932B1 (fr)
GB (1) GB1397338A (fr)
HK (1) HK36076A (fr)
IT (1) IT959298B (fr)
NL (1) NL159531B (fr)
SE (1) SE372137B (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2206994A (en) * 1987-06-08 1989-01-18 Philips Electronic Associated Semiconductor device

Also Published As

Publication number Publication date
CA921620A (en) 1973-02-20
FR2138932B1 (fr) 1975-08-29
HK36076A (en) 1976-06-18
FR2138932A1 (fr) 1973-01-05
CH535494A (de) 1973-03-31
DE2224467A1 (de) 1972-12-07
NL159531B (nl) 1979-02-15
NL7206913A (fr) 1972-11-28
JPS5138582B1 (fr) 1976-10-22
GB1397338A (en) 1975-06-11
SE372137B (fr) 1974-12-09
IT959298B (it) 1973-11-10
DE2224467B2 (de) 1974-03-07

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Legal Events

Date Code Title Description
RE20 Patent expired

Owner name: WESTERN ELECTRIC CY INC.

Effective date: 19920519