CA1217410A - Process for the liquid phase epitaxial deposition of a monocrystalline ternary compound - Google Patents

Process for the liquid phase epitaxial deposition of a monocrystalline ternary compound

Info

Publication number: CA1217410A
Authority: CA; Canada
Prior art keywords: compound; axbn; xcm; substrate; temperature
Prior art date: 1981-12-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA000418357A

Other languages

English (en)

French (fr)

Inventor

Jean-Louis Benchimol

Maurice Quillec

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

BENCHIMOL JEAN LOUIS

Original Assignee

BENCHIMOL JEAN LOUIS

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-12-28

Filing date

1982-12-22

Publication date

1987-02-03

1982-12-22 Application filed by BENCHIMOL JEAN LOUIS filed Critical BENCHIMOL JEAN LOUIS

1987-02-03 Application granted granted Critical

1987-02-03 Publication of CA1217410A publication Critical patent/CA1217410A/en

Status Expired legal-status Critical Current

Links

150000001875 compounds Chemical class 0.000 title claims abstract description 96
239000007791 liquid phase Substances 0.000 title claims abstract description 33
238000000034 method Methods 0.000 title claims abstract description 29
230000008021 deposition Effects 0.000 title claims abstract description 19
239000000758 substrate Substances 0.000 claims abstract description 37
239000000203 mixture Substances 0.000 claims abstract description 35
238000000407 epitaxy Methods 0.000 claims abstract description 31
238000000151 deposition Methods 0.000 claims abstract description 24
239000007787 solid Substances 0.000 claims abstract description 19
239000007790 solid phase Substances 0.000 claims abstract description 15
230000000737 periodic effect Effects 0.000 claims abstract description 7
229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
229910052738 indium Inorganic materials 0.000 claims description 6
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
239000007788 liquid Substances 0.000 description 9
229910000673 Indium arsenide Inorganic materials 0.000 description 8
RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 8
239000000470 constituent Substances 0.000 description 7
239000012071 phase Substances 0.000 description 6
229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
229910052785 arsenic Inorganic materials 0.000 description 3
229910052733 gallium Inorganic materials 0.000 description 3
238000005303 weighing Methods 0.000 description 3
229910005542 GaSb Inorganic materials 0.000 description 2
238000002441 X-ray diffraction Methods 0.000 description 2
238000010586 diagram Methods 0.000 description 2
238000004943 liquid phase epitaxy Methods 0.000 description 2
238000010587 phase diagram Methods 0.000 description 2
238000002360 preparation method Methods 0.000 description 2
239000010453 quartz Substances 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
229910052787 antimony Inorganic materials 0.000 description 1
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
ANTSCNMPPGJYLG-UHFFFAOYSA-N chlordiazepoxide Chemical compound O=N=1CC(NC)=NC2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 ANTSCNMPPGJYLG-UHFFFAOYSA-N 0.000 description 1
238000005137 deposition process Methods 0.000 description 1
238000006073 displacement reaction Methods 0.000 description 1
230000004907 flux Effects 0.000 description 1
239000011888 foil Substances 0.000 description 1
229910002804 graphite Inorganic materials 0.000 description 1
239000010439 graphite Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
238000005259 measurement Methods 0.000 description 1
238000009738 saturating Methods 0.000 description 1
239000011343 solid material Substances 0.000 description 1
239000008247 solid mixture Substances 0.000 description 1
239000002904 solvent Substances 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

CA000418357A 1981-12-28 1982-12-22 Process for the liquid phase epitaxial deposition of a monocrystalline ternary compound Expired CA1217410A (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
FR8124291A FR2519032A1 (fr)	1981-12-28	1981-12-28	Procede de depot par epitaxie en phase liquide d'un compose ternaire
FR8124291		1981-12-28

Publications (1)

Publication Number	Publication Date
CA1217410A true CA1217410A (en)	1987-02-03

Family

ID=9265424

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000418357A Expired CA1217410A (en)	1981-12-28	1982-12-22	Process for the liquid phase epitaxial deposition of a monocrystalline ternary compound

Country Status (7)

Country	Link
US (1)	US4532001A (2)
EP (1)	EP0083540B1 (2)
JP (1)	JPS58120594A (2)
CA (1)	CA1217410A (2)
DE (1)	DE3269761D1 (2)
FR (1)	FR2519032A1 (2)
NO (1)	NO824327L (2)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6028799B2 (ja) *	1982-04-28	1985-07-06	富士通株式会社	液相エピタキシヤル成長方法
FR2583782A1 (fr) *	1985-06-24	1986-12-26	Slempkes Serge	Procede de depot par epitaxie en phase liquide sur un substrat, d'un alliage au moins quaternaire, et dispositif semi-conducteur comportant un tel alliage
JPH0214894A (ja) *	1988-06-30	1990-01-18	Nec Corp	液相エピタキシャル成長方法
US6613162B1 (en) *	1999-10-25	2003-09-02	Rensselaer Polytechnic Institute	Multicomponent homogeneous alloys and method for making same
US7641733B2 (en) *	2004-09-01	2010-01-05	Rensselaer Polytechnic Institute	Method and apparatus for growth of multi-component single crystals
CN115216844B (zh) *	2022-04-25	2023-09-15	福州大学	一种中远红外非线性光学晶体硫磷镉的制备及应用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2151171A5 (en) *	1971-08-23	1973-04-13	Radiotechnique Compelec	Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium
BE795005A (fr) *	1972-02-09	1973-05-29	Rca Corp	Procede et appareil de croissance epitaxiale d'une matiere semi-conductrice a partir de la phase liquide et produit ainsi obtenu
FR2183522A1 (en) *	1972-05-08	1973-12-21	Radiotechnique Compelec	Epitaxial growth of ternary cpd - by isothermal crystallisation, with control over proportions of components in final prod
JPS53148388A (en) *	1977-05-31	1978-12-23	Kokusai Denshin Denwa Co Ltd	Method of producing compound semiconductor crystal
US4401487A (en) *	1980-11-14	1983-08-30	Hughes Aircraft Company	Liquid phase epitaxy of mercury cadmium telluride layer

1981
- 1981-12-28 FR FR8124291A patent/FR2519032A1/fr active Granted
1982
- 1982-12-22 CA CA000418357A patent/CA1217410A/en not_active Expired
- 1982-12-22 NO NO824327A patent/NO824327L/no unknown
- 1982-12-23 DE DE8282402377T patent/DE3269761D1/de not_active Expired
- 1982-12-23 EP EP82402377A patent/EP0083540B1/fr not_active Expired
- 1982-12-27 US US06/452,920 patent/US4532001A/en not_active Expired - Fee Related
- 1982-12-28 JP JP57235161A patent/JPS58120594A/ja active Pending

Also Published As

Publication number	Publication date
FR2519032B1 (2)	1984-04-06
US4532001A (en)	1985-07-30
NO824327L (no)	1983-06-29
DE3269761D1 (en)	1986-04-10
JPS58120594A (ja)	1983-07-18
EP0083540A1 (fr)	1983-07-13
FR2519032A1 (fr)	1983-07-01
EP0083540B1 (fr)	1986-03-05

Legal Events

Date	Code	Title	Description
2004-02-03	MKEX	Expiry

Publication	Publication Date	Title
US3933538A (en)	1976-01-20	Method and apparatus for production of liquid phase epitaxial layers of semiconductors
US4315796A (en)	1982-02-16	Crystal growth of compound semiconductor mixed crystals under controlled vapor pressure
CA1217410A (en)	1987-02-03	Process for the liquid phase epitaxial deposition of a monocrystalline ternary compound
Karam et al.	1986	Laser direct writing of single‐crystal III‐V compounds on GaAs
Reihlen et al.	1990	Optical absorption and emission of InP1− x Sb x alloys
Su et al.	1993	Growth of ZnTe by physical vapor transport and traveling heater method
US3975218A (en)	1976-08-17	Process for production of III-V compound epitaxial crystals
US4487640A (en)	1984-12-11	Method for the preparation of epitaxial films of mercury cadmium telluride
Wiedemeier et al.	1983	Growth by CVT and characterization of Hg1ȡxCdxTe Layers
US4888303A (en)	1989-12-19	Vapor phase epitaxy-hydride technique with a constant alloy source for the preparation of InGaAs layers
Castenedo et al.	1990	Semi‐insulating epitaxial GaAs
Bernardi	1988	Slider LPE growth of MCT using in situ Te-solution preparation
US4238252A (en)	1980-12-09	Process for growing indium phosphide of controlled purity
Ohta et al.	1977	Liquid Phase Epitaxial Growth of Ga x In1-x Sb by Vertical Dipping Method
Takenaka et al.	1978	Growth of GaAs1-xSbx crystals by steady-state liquid phase epitaxy
US5215938A (en)	1993-06-01	Process to obtain semi-insulating single crystalline epitaxial layers of arsenides and phosphides of metals of the group III of the periodic table useful to make electronic devices
Seki et al.	1976	New Methods of Vapour Phase Epitaxial Growth of GaAs
RU2209260C2 (ru)	2003-07-27	Подложка для выращивания эпитаксиальных слоев арсенида галлия
JPS58217496A (ja)	1983-12-17	化合物半導体単結晶の引上方法および装置
Abramov et al.	1994	Growth of GaAs and (Ge2) x (GaAs) 1-x on Si using ultrafast cooling of the growth solution
Freyhardt	2012	III–V Semiconductors
Launay et al.	1992	Crystal growth by THM of CdIn2Te4 and chemical characterization
JPS63144191A (ja)	1988-06-16	化合物半導体単結晶の製造方法と装置
Abrosimov et al.	1996	ELSEVIER Journal of Crystal Growth 166 (1996) 1125-1136
Lozovskii et al.	1983	Isothermal liquid phase epitaxy