CA2024134A1 - Passivation du gaas au moyen d'un plasma d'hydrogene - Google Patents

Passivation du gaas au moyen d'un plasma d'hydrogene

Info

Publication number
CA2024134A1
CA2024134A1 CA2024134A CA2024134A CA2024134A1 CA 2024134 A1 CA2024134 A1 CA 2024134A1 CA 2024134 A CA2024134 A CA 2024134A CA 2024134 A CA2024134 A CA 2024134A CA 2024134 A1 CA2024134 A1 CA 2024134A1
Authority
CA
Canada
Prior art keywords
passivation
gaas
hydrogen plasma
plasma passivation
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2024134A
Other languages
English (en)
Other versions
CA2024134C (fr
Inventor
Richard Alan Gottscho
Bryan L. Preppernau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of CA2024134A1 publication Critical patent/CA2024134A1/fr
Application granted granted Critical
Publication of CA2024134C publication Critical patent/CA2024134C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/94—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma

Landscapes

  • Formation Of Insulating Films (AREA)
  • Semiconductor Lasers (AREA)
CA002024134A 1989-09-01 1990-08-28 Passivation du gaas au moyen d'un plasma d'hydrogene Expired - Fee Related CA2024134C (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US40703089A 1989-09-01 1989-09-01
US407,030 1989-09-01
US47701290A 1990-02-07 1990-02-07
US477,012 1990-02-07

Publications (2)

Publication Number Publication Date
CA2024134A1 true CA2024134A1 (fr) 1991-03-02
CA2024134C CA2024134C (fr) 1993-10-05

Family

ID=27019735

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002024134A Expired - Fee Related CA2024134C (fr) 1989-09-01 1990-08-28 Passivation du gaas au moyen d'un plasma d'hydrogene

Country Status (1)

Country Link
CA (1) CA2024134C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8524562B2 (en) 2008-09-16 2013-09-03 Imec Method for reducing Fermi-Level-Pinning in a non-silicon channel MOS device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201012483D0 (en) * 2010-07-26 2010-09-08 Seren Photonics Ltd Light emitting diodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8524562B2 (en) 2008-09-16 2013-09-03 Imec Method for reducing Fermi-Level-Pinning in a non-silicon channel MOS device

Also Published As

Publication number Publication date
CA2024134C (fr) 1993-10-05

Similar Documents

Publication Publication Date Title
TW358978B (en) Method to etch a destruction-area on a semiconductor substrate-edge as well as an etching equipment
EP0045858A3 (fr) Electrode pour le décapage au plasma
EP0378512A3 (fr) Procédé d'encapsulation de substrats préformés par copolymérisation par greffage
CA2048339A1 (fr) Composant semi-conducteur et procede de preparation connexe
HK39688A (en) Article and method for protection of a substrate
TW327700B (en) The method for using rough oxide mask to form isolating field oxide
ES2081806T3 (es) Procedimiento de autolimpieza de una camara de reactor.
MY105972A (en) Improved method of antisotropically etching silicon, wafers and wafer etching solution.
EP0810440A3 (fr) Composant optique semiconducteur et processus pour sa fabrication
MY119496A (en) Method of purifying alkaline solution and method of etching semiconductor wafers
IT1213230B (it) Processo planox a becco ridotto per la formazione di componenti elettronici integrati.
TW288169B (en) Integrated arc and polysilicon etching process
EP0607808A3 (fr) Procédé de gravure d'un substrat semi-conducteur.
DE3681112D1 (de) Plasmaaetzverfahren zur herstellung von metall-halbleiter-kontakte des ohmischen typs.
TW357405B (en) Method for pre-shaping a semiconductor substrate for polishing and structure
HK1005783A1 (en) Method for forming a photoresist film
CA2024134A1 (fr) Passivation du gaas au moyen d'un plasma d'hydrogene
FR2714526B1 (fr) Procédé de gravure au plasma d'un substrat de HgCdTe.
GB2198610B (en) Method of producing a diaphragm on a substrate
WO1991006976A3 (fr) Procede de production d'une couche d'oxyde d'aluminium sur divers substrats
JPS5547381A (en) Plasma etching method
EP0441024A3 (en) Hydrogen plasma passivation of gaas
JPS5384684A (en) Plasma etching device
WO2002009241A3 (fr) Electrode perfectionnee pour systeme de traitement au plasma
TW284904B (en) Etch back improving method by using concave-convex etching contour

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed