CH238752A - Barrier electrode system with at least one grid embedded in the barrier layer. - Google Patents

Barrier electrode system with at least one grid embedded in the barrier layer.

Info

Publication number
CH238752A
CH238752A CH238752DA CH238752A CH 238752 A CH238752 A CH 238752A CH 238752D A CH238752D A CH 238752DA CH 238752 A CH238752 A CH 238752A
Authority
CH
Switzerland
Prior art keywords
barrier
electrode system
grid embedded
barrier layer
grid
Prior art date
Application number
Other languages
German (de)
Inventor
Gloeilampenfabrieken N Philips
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH238752A publication Critical patent/CH238752A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/048—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H10D48/049—Ageing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers
CH238752D 1941-04-21 1942-04-21 Barrier electrode system with at least one grid embedded in the barrier layer. CH238752A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL238752X 1941-04-21

Publications (1)

Publication Number Publication Date
CH238752A true CH238752A (en) 1945-08-15

Family

ID=19780425

Family Applications (1)

Application Number Title Priority Date Filing Date
CH238752D CH238752A (en) 1941-04-21 1942-04-21 Barrier electrode system with at least one grid embedded in the barrier layer.

Country Status (2)

Country Link
US (1) US2456758A (en)
CH (1) CH238752A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3204159A (en) * 1960-09-14 1965-08-31 Bramley Jenny Rectifying majority carrier device
US3153154A (en) * 1962-02-13 1964-10-13 James J Murray Grid controlled transistor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR802364A (en) * 1935-03-09 1936-09-03 Philips Nv Unsymmetrical conductivity electrode system
GB500342A (en) * 1937-09-18 1939-02-07 British Thomson Houston Co Ltd Improvements relating to dry surface-contact electric rectifiers
GB500344A (en) * 1937-09-22 1939-02-07 British Thomson Houston Co Ltd Improvements in and relating to dry surface-contact electric rectifiers
GB500180A (en) * 1937-09-23 1939-02-03 British Thomson Houston Co Ltd Improvements in and relating to dry surface contact electric rectifiers
BE436972A (en) * 1938-11-15
NL60402C (en) * 1940-07-03

Also Published As

Publication number Publication date
US2456758A (en) 1948-12-21

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