CH331017A - Method for producing a PN junction in a semiconductor - Google Patents

Method for producing a PN junction in a semiconductor

Info

Publication number
CH331017A
CH331017A CH331017DA CH331017A CH 331017 A CH331017 A CH 331017A CH 331017D A CH331017D A CH 331017DA CH 331017 A CH331017 A CH 331017A
Authority
CH
Switzerland
Prior art keywords
junction
semiconductor
producing
Prior art date
Application number
Other languages
German (de)
Inventor
Francis Drake Cyril
Anthony Hyman Robert
Charles Geary Frederick
Original Assignee
Standard Telephon & Radio Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB20395/53A external-priority patent/GB753133A/en
Application filed by Standard Telephon & Radio Ag filed Critical Standard Telephon & Radio Ag
Publication of CH331017A publication Critical patent/CH331017A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/38Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/69Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50Alloying conductive materials with semiconductor bodies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
CH331017D 1953-07-22 1954-07-22 Method for producing a PN junction in a semiconductor CH331017A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB20395/53A GB753133A (en) 1953-07-22 1953-07-22 Improvements in or relating to electric semi-conducting devices
GB1250/54A GB753140A (en) 1953-07-22 1953-07-22 Improvements in or relating to electric semi-conducting devices

Publications (1)

Publication Number Publication Date
CH331017A true CH331017A (en) 1958-06-30

Family

ID=26236590

Family Applications (1)

Application Number Title Priority Date Filing Date
CH331017D CH331017A (en) 1953-07-22 1954-07-22 Method for producing a PN junction in a semiconductor

Country Status (4)

Country Link
BE (1) BE530566A (en)
CH (1) CH331017A (en)
DE (1) DE1024640B (en)
GB (1) GB753140A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3108914A (en) * 1959-06-30 1963-10-29 Fairchild Camera Instr Co Transistor manufacturing process

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1207012B (en) * 1955-12-24 1965-12-16 Telefunken Patent Semiconductor component with an injecting and a collecting electrode
NL215949A (en) * 1956-04-03
US2964435A (en) * 1957-03-27 1960-12-13 Mc Graw Edison Co Semiconductor devices and their manufacture
DE1243278B (en) * 1958-03-27 1967-06-29 Siemens Ag npn or pnp power transistor made of silicon
US3041226A (en) * 1958-04-02 1962-06-26 Hughes Aircraft Co Method of preparing semiconductor crystals
NL238556A (en) * 1958-04-24
GB909869A (en) * 1958-06-09 1900-01-01
NL105824C (en) * 1958-06-26
BE569807A (en) * 1958-07-26
DE1105522B (en) * 1958-11-12 1961-04-27 Licentia Gmbh Transistor with a disk-shaped semiconductor body
US3225416A (en) * 1958-11-20 1965-12-28 Int Rectifier Corp Method of making a transistor containing a multiplicity of depressions
NL246742A (en) * 1958-12-24
NL247735A (en) * 1959-01-28
NL250075A (en) 1959-04-10 1900-01-01
US2937114A (en) * 1959-05-29 1960-05-17 Shockley Transistor Corp Semiconductive device and method
US3041214A (en) * 1959-09-25 1962-06-26 Clevite Corp Method of forming junction semiconductive devices having thin layers
DE1133038B (en) * 1960-05-10 1962-07-12 Siemens Ag Semiconductor component with an essentially single-crystal semiconductor body and four zones of alternating conductivity type
DE1166379B (en) * 1961-05-12 1964-03-26 Raytheon Co High frequency transistor and process for its manufacture
DE1208409B (en) * 1961-05-19 1966-01-05 Int Standard Electric Corp Electrical semiconductor component with pn junction and method for manufacturing
DE1237694B (en) * 1961-08-10 1967-03-30 Siemens Ag Process for alloying electrical semiconductor components
DE1225304B (en) * 1961-11-16 1966-09-22 Telefunken Patent Diffusion process for manufacturing a semiconductor component
DE1280421B (en) * 1965-08-23 1968-10-17 Halbleiterwerk Frankfurt Oder Method for reducing sheet resistances in semiconductor devices
CH426020A (en) * 1965-09-08 1966-12-15 Bbc Brown Boveri & Cie Method for producing the semiconductor element of a surge voltage-resistant semiconductor valve, as well as a semiconductor element produced with the aid of this method
DE1281037B (en) * 1965-09-18 1968-10-24 Telefunken Patent Method of manufacturing a transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3108914A (en) * 1959-06-30 1963-10-29 Fairchild Camera Instr Co Transistor manufacturing process

Also Published As

Publication number Publication date
BE530566A (en)
GB753140A (en) 1956-07-18
DE1024640B (en) 1958-02-20

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