CH331017A - Method for producing a PN junction in a semiconductor - Google Patents
Method for producing a PN junction in a semiconductorInfo
- Publication number
- CH331017A CH331017A CH331017DA CH331017A CH 331017 A CH331017 A CH 331017A CH 331017D A CH331017D A CH 331017DA CH 331017 A CH331017 A CH 331017A
- Authority
- CH
- Switzerland
- Prior art keywords
- junction
- semiconductor
- producing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/50—Alloying conductive materials with semiconductor bodies
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB20395/53A GB753133A (en) | 1953-07-22 | 1953-07-22 | Improvements in or relating to electric semi-conducting devices |
| GB1250/54A GB753140A (en) | 1953-07-22 | 1953-07-22 | Improvements in or relating to electric semi-conducting devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH331017A true CH331017A (en) | 1958-06-30 |
Family
ID=26236590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH331017D CH331017A (en) | 1953-07-22 | 1954-07-22 | Method for producing a PN junction in a semiconductor |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE530566A (en) |
| CH (1) | CH331017A (en) |
| DE (1) | DE1024640B (en) |
| GB (1) | GB753140A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3108914A (en) * | 1959-06-30 | 1963-10-29 | Fairchild Camera Instr Co | Transistor manufacturing process |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1207012B (en) * | 1955-12-24 | 1965-12-16 | Telefunken Patent | Semiconductor component with an injecting and a collecting electrode |
| NL215949A (en) * | 1956-04-03 | |||
| US2964435A (en) * | 1957-03-27 | 1960-12-13 | Mc Graw Edison Co | Semiconductor devices and their manufacture |
| DE1243278B (en) * | 1958-03-27 | 1967-06-29 | Siemens Ag | npn or pnp power transistor made of silicon |
| US3041226A (en) * | 1958-04-02 | 1962-06-26 | Hughes Aircraft Co | Method of preparing semiconductor crystals |
| NL238556A (en) * | 1958-04-24 | |||
| GB909869A (en) * | 1958-06-09 | 1900-01-01 | ||
| NL105824C (en) * | 1958-06-26 | |||
| BE569807A (en) * | 1958-07-26 | |||
| DE1105522B (en) * | 1958-11-12 | 1961-04-27 | Licentia Gmbh | Transistor with a disk-shaped semiconductor body |
| US3225416A (en) * | 1958-11-20 | 1965-12-28 | Int Rectifier Corp | Method of making a transistor containing a multiplicity of depressions |
| NL246742A (en) * | 1958-12-24 | |||
| NL247735A (en) * | 1959-01-28 | |||
| NL250075A (en) | 1959-04-10 | 1900-01-01 | ||
| US2937114A (en) * | 1959-05-29 | 1960-05-17 | Shockley Transistor Corp | Semiconductive device and method |
| US3041214A (en) * | 1959-09-25 | 1962-06-26 | Clevite Corp | Method of forming junction semiconductive devices having thin layers |
| DE1133038B (en) * | 1960-05-10 | 1962-07-12 | Siemens Ag | Semiconductor component with an essentially single-crystal semiconductor body and four zones of alternating conductivity type |
| DE1166379B (en) * | 1961-05-12 | 1964-03-26 | Raytheon Co | High frequency transistor and process for its manufacture |
| DE1208409B (en) * | 1961-05-19 | 1966-01-05 | Int Standard Electric Corp | Electrical semiconductor component with pn junction and method for manufacturing |
| DE1237694B (en) * | 1961-08-10 | 1967-03-30 | Siemens Ag | Process for alloying electrical semiconductor components |
| DE1225304B (en) * | 1961-11-16 | 1966-09-22 | Telefunken Patent | Diffusion process for manufacturing a semiconductor component |
| DE1280421B (en) * | 1965-08-23 | 1968-10-17 | Halbleiterwerk Frankfurt Oder | Method for reducing sheet resistances in semiconductor devices |
| CH426020A (en) * | 1965-09-08 | 1966-12-15 | Bbc Brown Boveri & Cie | Method for producing the semiconductor element of a surge voltage-resistant semiconductor valve, as well as a semiconductor element produced with the aid of this method |
| DE1281037B (en) * | 1965-09-18 | 1968-10-24 | Telefunken Patent | Method of manufacturing a transistor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
-
0
- BE BE530566D patent/BE530566A/xx unknown
-
1953
- 1953-07-22 GB GB1250/54A patent/GB753140A/en not_active Expired
-
1954
- 1954-07-21 DE DEI8930A patent/DE1024640B/en active Pending
- 1954-07-22 CH CH331017D patent/CH331017A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3108914A (en) * | 1959-06-30 | 1963-10-29 | Fairchild Camera Instr Co | Transistor manufacturing process |
Also Published As
| Publication number | Publication date |
|---|---|
| BE530566A (en) | |
| GB753140A (en) | 1956-07-18 |
| DE1024640B (en) | 1958-02-20 |
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