CN108682623B - 用于永久接合晶片的方法 - Google Patents

用于永久接合晶片的方法 Download PDF

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Publication number
CN108682623B
CN108682623B CN201810607031.1A CN201810607031A CN108682623B CN 108682623 B CN108682623 B CN 108682623B CN 201810607031 A CN201810607031 A CN 201810607031A CN 108682623 B CN108682623 B CN 108682623B
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layer
contact surface
reservoir
reaction
permanent bond
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CN108682623A (zh
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T.普拉赫
K.欣格尔
M.温普林格
C.弗勒特根
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EV Group E Thallner GmbH
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EV Group E Thallner GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07311—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding

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  • Pressure Welding/Diffusion-Bonding (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
  • Adhesives Or Adhesive Processes (AREA)
CN201810607031.1A 2011-01-25 2011-01-25 用于永久接合晶片的方法 Active CN108682623B (zh)

Priority Applications (1)

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CN201810607031.1A CN108682623B (zh) 2011-01-25 2011-01-25 用于永久接合晶片的方法

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CN201810607031.1A CN108682623B (zh) 2011-01-25 2011-01-25 用于永久接合晶片的方法
PCT/EP2011/000299 WO2012100786A1 (fr) 2011-01-25 2011-01-25 Procédé de collage permanent de tranches
CN201180065964.9A CN103329247B (zh) 2011-01-25 2011-01-25 用于永久接合晶片的方法

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CN201180065964.9A Division CN103329247B (zh) 2011-01-25 2011-01-25 用于永久接合晶片的方法

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CN108682623A CN108682623A (zh) 2018-10-19
CN108682623B true CN108682623B (zh) 2022-09-27

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CN201810604777.7A Active CN108766873B (zh) 2011-01-25 2011-01-25 用于永久接合晶片的方法
CN201810607031.1A Active CN108682623B (zh) 2011-01-25 2011-01-25 用于永久接合晶片的方法
CN201180065964.9A Active CN103329247B (zh) 2011-01-25 2011-01-25 用于永久接合晶片的方法

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US (3) US9252042B2 (fr)
EP (4) EP3447789B1 (fr)
JP (1) JP5955866B2 (fr)
KR (6) KR102353489B1 (fr)
CN (3) CN108766873B (fr)
SG (1) SG192102A1 (fr)
TW (5) TWI594292B (fr)
WO (1) WO2012100786A1 (fr)

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Publication number Priority date Publication date Assignee Title
EP3447789B1 (fr) 2011-01-25 2021-04-14 EV Group E. Thallner GmbH Procédé d'assemblage permanent de wafers
EP2695183A1 (fr) 2011-04-08 2014-02-12 Ev Group E. Thallner GmbH Procédé de liaison permanente de plaquettes de semi-conducteurs
EP3043378A3 (fr) * 2011-08-30 2016-10-19 EV Group E. Thallner GmbH Procédé d'assemblage permanent de tranches par diffusion à l'état solide ou transition de phase utilisant une couche fonctionelle
FR3001225B1 (fr) 2013-01-22 2016-01-22 Commissariat Energie Atomique Procede de fabrication d’une structure par collage direct
KR102158960B1 (ko) * 2013-07-05 2020-09-23 에베 그룹 에. 탈너 게엠베하 접촉면의 본딩을 위한 방법
JP6379184B2 (ja) * 2013-09-25 2018-08-22 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板をボンディングする装置および方法
DE102014112430A1 (de) 2014-08-29 2016-03-03 Ev Group E. Thallner Gmbh Verfahren zur Herstellung eines leitenden Mehrfachsubstratstapels
JP2016171307A (ja) * 2015-03-10 2016-09-23 株式会社デンソー 基板接合方法
JP6106239B2 (ja) * 2015-09-30 2017-03-29 エーファウ・グループ・エー・タルナー・ゲーエムベーハー ウェハを恒久的にボンディングするための方法
US10084090B2 (en) * 2015-11-09 2018-09-25 International Business Machines Corporation Method and structure of stacked FinFET
FR3045939B1 (fr) * 2015-12-22 2018-03-30 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de collage direct entre deux structures
US10373830B2 (en) * 2016-03-08 2019-08-06 Ostendo Technologies, Inc. Apparatus and methods to remove unbonded areas within bonded substrates using localized electromagnetic wave annealing
CN118737998A (zh) 2017-03-02 2024-10-01 Ev 集团 E·索尔纳有限责任公司 用于键合芯片的方法和装置
WO2024240350A1 (fr) 2023-05-25 2024-11-28 Ev Group E. Thallner Gmbh Procédé de séparation d'un substrat total en un premier substrat et un second substrat, et dispositif pour un procédé de ce type
WO2025082598A1 (fr) 2023-10-18 2025-04-24 Ev Group E. Thallner Gmbh Procédé de transfert d'une unité fonctionnelle, substrat donneur et appareil pour la mise en œuvre d'un tel procédé
WO2025153185A1 (fr) 2024-01-19 2025-07-24 Ev Group E. Thallner Gmbh Dispositif et procédé pour empêcher des défauts de bord au moyen d'un revêtement de bord
WO2025228530A1 (fr) 2024-05-02 2025-11-06 Ev Group E. Thallner Gmbh Procédé de connexion temporaire d'un substrat de produit et d'un substrat de support, substrat de support, substrat de produit et système de couche et agencement associé, et dispositif de mise en œuvre d'un tel procédé
WO2026015698A1 (fr) * 2024-07-10 2026-01-15 Board Of Regents, The University Of Texas System Procédés de liaison puce à tranche et tranche à tranche

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CN108766873A (zh) 2018-11-06
EP3024014A1 (fr) 2016-05-25
JP2014510391A (ja) 2014-04-24
KR101705937B1 (ko) 2017-02-10
US9252042B2 (en) 2016-02-02
JP5955866B2 (ja) 2016-07-20
EP2668661A1 (fr) 2013-12-04
KR102430673B1 (ko) 2022-08-08
KR20170140428A (ko) 2017-12-20
TWI594292B (zh) 2017-08-01
EP3024014B9 (fr) 2019-04-24
US20190006313A1 (en) 2019-01-03
TW201612949A (en) 2016-04-01
CN108682623A (zh) 2018-10-19
KR20150142075A (ko) 2015-12-21
EP3447789A1 (fr) 2019-02-27
KR102095095B1 (ko) 2020-03-31
EP3024014B1 (fr) 2018-11-28
EP3442006A3 (fr) 2019-02-20
US20130299080A1 (en) 2013-11-14
EP2668661B1 (fr) 2016-01-20
TW201250772A (en) 2012-12-16
WO2012100786A1 (fr) 2012-08-02
TW201933428A (zh) 2019-08-16
TWI697939B (zh) 2020-07-01
KR20140039138A (ko) 2014-04-01
KR20210029286A (ko) 2021-03-15
TW201832270A (zh) 2018-09-01
CN103329247B (zh) 2018-07-31
KR102225764B1 (ko) 2021-03-10
US20160111394A1 (en) 2016-04-21
CN103329247A (zh) 2013-09-25
TWI699820B (zh) 2020-07-21
TWI681438B (zh) 2020-01-01
CN108766873B (zh) 2023-04-07
SG192102A1 (en) 2013-08-30
KR20220011224A (ko) 2022-01-27
TWI660399B (zh) 2019-05-21
EP3442006A2 (fr) 2019-02-13
KR20200034827A (ko) 2020-03-31
EP3447789B1 (fr) 2021-04-14
KR102353489B1 (ko) 2022-01-19
TW201931433A (zh) 2019-08-01
KR101810310B1 (ko) 2017-12-18
US10083933B2 (en) 2018-09-25

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