CN202175621U - 一种三银low-e镀膜玻璃 - Google Patents

一种三银low-e镀膜玻璃 Download PDF

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CN202175621U
CN202175621U CN2011202427380U CN201120242738U CN202175621U CN 202175621 U CN202175621 U CN 202175621U CN 2011202427380 U CN2011202427380 U CN 2011202427380U CN 201120242738 U CN201120242738 U CN 201120242738U CN 202175621 U CN202175621 U CN 202175621U
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董清世
张洪
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Xinyi Energy Saving Glass (wuhu) Co Ltd
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Abstract

本实用新型公开了一种三银LOW-E镀膜玻璃,包括玻璃基底层,以及与所述玻璃基底层依次叠加设置的第一电介质层、金属氧化物保护层、第一银层、第一阻挡层、第一中间过渡电介质层、第二银层、第二阻挡层、第二中间过渡电介质层、第三银层、第三阻挡层、第二电介质层、顶层电介质保护层。本实用新型三银LOW-E镀膜玻璃采用多层结构叠加设置而成,与传统的LOW-E玻璃相比,该三银LOW-E镀膜玻璃具有更加优良的光学与热学性能,更低的辐射率和遮阳系数以及优良稳定性能。

Description

一种三银LOW-E镀膜玻璃
技术领域
本实用新型属于镀膜玻璃技术领域,具体的说是涉及一种三银LOW-E镀膜玻璃。
背景技术
三银LOW-E玻璃,即一种新型高端的低辐射玻璃,是在玻璃表面镀制包括三层银层在内的多层金属及其它化合物组成的膜系产品。由于银层具有低辐射的特性,从而使得该LOW-E玻璃对可见光有较高的透射率,对红外线有很高的反射率,具有优良的隔热和保温性能。目前,市场上的三银LOW-E玻璃一般都是低透型,市场可供选择的局限性比较大。
随着国家对低碳理念的推行,市场对LOW-E玻璃的节能环保性能要求越来越高,单一的遮阳型三银LOW-E产品已不能满足其需求,因此急需开发出一种透过率高,性能稳定,遮阳系数更低,光学性能和热工性能优良的高透型三银LOW-E玻璃,以满足市场对三银LOW-E高透市场的需求。
实用新型内容
本实用新型所要解决的技术问题在于克服现有技术之缺陷,提供一种透过率高,性能稳定,遮阳系数更低,光学性能和热学性能优良的三银LOW-E镀膜玻璃。
为了实现上述实用新型目的,本实用新型的技术方案如下:
一种三银LOW-E镀膜玻璃,包括玻璃基底层,以及与所述玻璃基底层依次叠加设置的第一电介质层、金属氧化物保护层、第一银层、第一阻挡层、第一中间过渡电介质层、第二银层、第二阻挡层、第二中间过渡电介质层、第三银层、第三阻挡层、第二电介质层、顶层电介质保护层。
优选地,上述第一电介质层、第一中间过渡电介质层、第二中间过渡电介质层、第二电介质层和顶层电介质保护层为金属氧化物层、氮化物层或金属氧化物与氮化物混合的混合物层。
优选地,上述第一电介质层、第一中间过渡电介质层、第二中间过渡电介质层、第二电介质层和顶层电介质保护层选自TiO2层、ZnSnOx层、SnO2层、ZnO层、SiNxOy层、BiO2层、Al2O3层、Nb2O5层、SixNy层、Si3N4层中的至少一层,或者为TiO2、ZnSnOx、SnO2、ZnO、SiNxOy、BiO2、Al2O3、Nb2O5、SixNy、Si3N4中的至少两种混合的混合物层。
优选地,上述第一电介质层的厚度为20~60nm。
优选地,上述第一中间过渡电介质层的厚度为20~50nm,第二中间过渡电介质层的厚度为10~50nm。
优选地,上述第二电介质结合层厚度为5~25nm。
优选地,上述顶层电介质保护层的厚度为20~50nm。
优选地,上述金属氧化物保护层厚度为3~15nm。
优选地,上述第一阻挡层、第二阻挡层和第三阻挡层选自NiCr层、Nb层、Cr层、NiCrOx层、NbOx层、CrOx层、NiCrNx层、NbNx层、CrNx层中的一层或多层;所述第一阻挡层、第二阻挡层和第三阻挡层的厚度为0.5nm~8nm。
优选地,上述第一银层的厚度3~8nm,第二银层的厚度3~10nm,第三银层的厚度3~12nm。
上述三银LOW-E镀膜玻璃采用多层结构叠加设置而成,与传统的LOW-E玻璃相比,该三银LOW-E镀膜玻璃具有更加优良的光学与热学性能,更低的辐射率和遮阳系数以及优良稳定性能。优良的光学与热学性能使得该三银LOW-E镀膜玻璃对光的反射率更低,可使建筑物外视效果更加通透明亮,并有效减少眩光现象;更低的辐射率和更低的遮阳系数,使得该三银LOW-E镀膜玻璃具有更好的保温和隔热性能。
附图说明
图1是本实用新型实施例1中三银LOW-E镀膜玻璃结构示意图;
图2是本实用新型实施例2中三银LOW-E镀膜玻璃结构示意图。
具体实施方式
为了使本实用新型要解决的技术问题、技术方案及有益效果更加清楚明白,以下结合实施例,对本实用新型进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本实用新型,并不用于限定本实用新型。
本实用新型实施例提供一种透过率高,性能稳定,遮阳系数更低,光学性能和热学性能优良的三银LOW-E镀膜玻璃。如图1所示,该三银LOW-E镀膜玻璃包括玻璃基底层1,以及与该玻璃基底层1依次叠加设置的第一电介质层2、金属氧化物保护层3、第一银层4、第一阻挡层5、第一中间过渡电介质层6、第二银层7、第二阻挡层8、第二中间过渡电介质层9、第三银层10、第三阻挡层11、第二电介质层12、顶层电介质保护层13。
这样,上述三银LOW-E镀膜玻璃采用多层结构叠加设置而成,与传统的LOW-E玻璃相比,该三银LOW-E镀膜玻璃具有更加优良的光学与热学性能,更低的辐射率和遮阳系数以及优良稳定性能。优良的光学与热学性能使得该三银LOW-E镀膜玻璃对光的反射率更低,可使建筑物外视效果更加通透明亮,并有效减少眩光现象;更低的辐射率和遮阳系数,使得该三银LOW-E镀膜玻璃具有更好的保温和隔热性能。其中,三层银层具有低辐射的特性,赋予了该三银LOW-E镀膜玻璃优良的隔热和保温性能;三层阻挡层在有效的降低该三银LOW-E镀膜玻璃膜层厚度的同时,有效保护了三层银层不被氧化,提高了该三银LOW-E镀膜玻璃的稳定性能和增透性能;两层中间过渡电介质层具有良好的连接能力,使该三银LOW-E镀膜玻璃结构紧凑,牢固的同时,具有对光的高透过率;金属氧化物保护层3起到保护功能层的作用,保证该三银LOW-E镀膜玻璃的稳定性;第一电介质层2和第二电介质层12有效的增大了光的折射率,从而增强了该三银LOW-E镀膜玻璃增透性,同时又能很好的起到膜层连接作用和颜色的调控作用。
优选地,如图1,第一电介质层2、第一中间过渡电介质层6、第二中间过渡电介质层9、第二电介质层12和顶层电介质保护层13为金属氧化物层、氮化物层或金属氧化物与氮化物混合的混合物层。其中,第一电介质层2的厚度为20~60nm,第一中间过渡电介质层6的厚度为20~50nm,第二中间过渡电介质层9的厚度为10~50nm,第二电介质结合层12厚度为5~25nm,顶层电介质保护层13的厚度为20~50nm。
进一步优选地,如图1所示,第一电介质层2、第一中间过渡电介质层6、第二中间过渡电介质层9、第二电介质层12和顶层电介质保护层13选自TiO2层、ZnSnOx层、SnO2层、ZnO层、SiNxOy层、BiO2层、Al2O3层、Nb2O5层、SixNy层、Si3N4层中的至少一层,或者为TiO2、ZnSnOx、SnO2、ZnO、SiNxOy、BiO2、Al2O3、Nb2O5、SixNy、Si3N4中的至少两种混合的混合物层。
优选地,如图1所示,作为本实用新型的实施例,金属氧化物保护层3为ZnO层,其厚度优选为3~15nm。以ZnO层作为金属氧化物保护层3,能更有效的起到保护功能层的作用,保证该三银LOW-E镀膜玻璃的稳定性;该金属氧化物保护层3优选厚度能有效的提高该三银LOW-E镀膜玻璃的透过率。当然,该金属氧化物保护层3也可以用其他具有相同功能层结构替代,如TiO2层、ZnSnOx层、SnO2层、SiNxOy层、BiO2层、Al2O3层、Nb2O5层中的任一层,或者为TiO2、ZnSnOx、SnO2、SiNxOy、BiO2、Al2O3、Nb2O5中的至少两种混合的混合物层。
优选地,如图1所示,第一阻挡层5、第二阻挡层8和第三阻挡层11选自NiCr层、Nb层、Cr层、NiCrOx层、NbOx层、CrOx层、NiCrNx层、NbNx层、CrNx层中的一层或多层,该第一阻挡层5、第二阻挡层8和第三阻挡层10的厚度为0.5nm~8nm。该优选的三层阻挡层结构能进一步降低该三银LOW-E镀膜玻璃膜层厚度,进一步保护了三层银层不被氧化,提高了该三银LOW-E镀膜玻璃的稳定性能和增透性能。
优选地,如图1所示,上述第一银层4的厚度3~8nm,第二银层7的厚度3~10nm,第三银层10的厚度3~12nm。该优选的三层银层结构进一步提高该三银LOW-E镀膜玻璃隔热和保温性能,同提高了该三银LOW-E镀膜玻璃的光透过率。
优选地,如图1所示,玻璃基底层1的玻璃材质可以是普通、钢化玻璃,或本技术领域常用的其他玻璃。
现结合具体实例,对本实用新型实施例三银LOW-E镀膜玻璃进行进一步详细说明。
实施例1
一种三银LOW-E镀膜玻璃,其结构如图1所示,包括依次叠加设置的钢化玻璃基片1、第一TiO2电介质层2、ZnO保护层3、第一银层4、第一氧化镍铬(NiCrOx)阻挡层5、第一氧化锌锡(ZnSnOx)中间过渡电介质层6、第二银层7、第二氧化镍铬(NiCrOx)阻挡层8、第二氧化锌锡(ZnSnOx)中间过渡电介质层9、第三银层10、第三氧化镍铬(NiCrOx)阻挡层11、第二氧化锌锡(ZnSnOx)电介质层12、顶层氮化硅(SixNy)电介质保护层13。其中,各层的厚度参见表1中数据。
上述三银LOW-E镀膜玻璃的加工步骤为:按照下述表1中工艺参数在钢化玻璃基片1一表面依次镀上述的第一TiO2电介质层2、ZnO保护层3、第一银层4、第一氧化镍铬(NiCrOx)层5、第一氧化锌锡(ZnSnOx)电介质层6、第二银层7、第二氧化镍铬(NiCrOx)层8、第二ZnSnOx/ZnO混合电介质层9、第三银层10、第三氧化镍铬(NiCrOx)层11、第二氧化锌锡(ZnSnOx)电介质层12、顶层氮化硅(SixNy)保护介质层13,得到该三银LOW-E镀膜玻璃。
表1
Figure BDA0000074975690000071
经实验分析得知,本实施例三银LOW-E镀膜玻璃光透过率可达到68%~70%,颜色中性柔和,反射率更低,可使建筑物外视效果更加通透明亮,并有效减少眩光现象,遮阳系数能达到0.3~0.4,辐射率小于0.03,U值1.5~1.6,具有优良的光学和热工性能。
实施例2
一种三银LOW-E镀膜玻璃,其结构如图2所示,包括依次叠加设置的普通玻璃基片1’、第一SnO2电介质层2’、Al2O3保护层3’、第一银层4、第一NiCrNx阻挡层5’、第一SiNxOy中间过渡电介质层6’、第二银层7、第二NiCr阻挡层8’、第二Si3N4中间过渡电介质层9’、第三银层10、第三Nb层阻挡层11’、第二SiNxOy电介质层12’、顶层SiNxOy电介质保护层13’。其中,第一SnO2电介质层2’的厚度为40nm,Al2O3保护层3’的厚度为9nm,第一银层4的厚度为7nm,第一NiCrNx阻挡层5’的厚度为4nm,第一SiNxOy中间过渡电介质层6’的厚度为35nm,第二银层7的厚度为10nm,第二NiCr阻挡层8’的厚度为6nm,第二Si3N4中间过渡电介质层9’的厚度为30nm,第三银层10的厚度为5nm,第三Nb层阻挡层11’的厚度为2nm,第二SiNxOy电介质层12’的厚度为15nm,顶层SiNxOy电介质保护层13’的厚度为30nm。
经实验分析得知,本实施例2中三银LOW-E镀膜玻璃的光透、反射率更低、遮阳系数、辐射率与实施例1中三银LOW-E镀膜玻璃相关性能相似,具有优良的光学和热工性能。
以上所述仅为本实用新型的较佳实施例而已,并不用以限制本实用新型,凡在本实用新型的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本实用新型的保护范围之内。

Claims (10)

1.一种三银LOW-E镀膜玻璃,其特征在于:包括玻璃基底层,以及与所述玻璃基底层依次叠加设置的第一电介质层、金属氧化物保护层、第一银层、第一阻挡层、第一中间过渡电介质层、第二银层、第二阻挡层、第二中间过渡电介质层、第三银层、第三阻挡层、第二电介质层、顶层电介质保护层。
2.根据权利要求1所述的三银LOW-E镀膜玻璃,其特征在于:所述第一电介质层、第一中间过渡电介质层、第二中间过渡电介质层、第二电介质层和顶层电介质保护层选自金属氧化物层、氮化物层或金属氧化物与氮化物混合的混合物层。
3.根据权利要求1所述的三银LOW-E镀膜玻璃,其特征在于:所述第一电介质层、第一中间过渡电介质层、第二中间过渡电介质层、第二电介质层和顶层电介质保护层选自TiO2层、ZnSnOx层、SnO2层、ZnO层、SiNxOy层、BiO2层、Al2O3层、Nb2O5层、SixNy层、Si3N4层中的至少一层。
4.根据权利要求1至3任一所述的三银LOW-E镀膜玻璃,其特征在于:所述第一电介质层的厚度为20~60nm。
5.根据权利要求1至3任一所述的三银LOW-E镀膜玻璃,其特征在于:所述第一中间过渡电介质层的厚度为20~50nm;
所述第二中间过渡电介质层的厚度为10~50nm。
6.根据权利要求1至3任一所述的三银LOW-E镀膜玻璃,其特征在于:所述第二电介质结合层厚度为5~25nm。
7.根据权利要求1至3任一所述的三银LOW-E镀膜玻璃,其特征在于:所述顶层电介质保护层的厚度为20~50nm。
8.根据权利要求1至3任一所述的三银LOW-E镀膜玻璃,其特征在于:所述金属氧化物保护层厚度为3~15nm。
9.根据权利要求1至3任一所述的三银LOW-E镀膜玻璃,其特征在于:所述第一阻挡层、第二阻挡层和第三阻挡层选自NiCr层、Nb层、Cr层、NiCrOx 层、NbOx层、CrOx层、NiCrNx层、NbNx层、CrNx层中的一层或多层;所述第一阻挡层、第二阻挡层和第三阻挡层的厚度为0.5nm~8nm。
10.根据权利要求1至3任一所述的三银LOW-E镀膜玻璃,其特征在于:所述第一银层的厚度3~8nm,第二银层的厚度3~10nm,第三银层的厚度3~12nm。 
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