DK0554019T3 - Fremgangsmåde til fremstilling af en forhøjet kontaktstruktur på en halvlederindretning - Google Patents

Fremgangsmåde til fremstilling af en forhøjet kontaktstruktur på en halvlederindretning

Info

Publication number
DK0554019T3
DK0554019T3 DK93300480T DK93300480T DK0554019T3 DK 0554019 T3 DK0554019 T3 DK 0554019T3 DK 93300480 T DK93300480 T DK 93300480T DK 93300480 T DK93300480 T DK 93300480T DK 0554019 T3 DK0554019 T3 DK 0554019T3
Authority
DK
Denmark
Prior art keywords
passivation layer
bump
stem
margins
edges
Prior art date
Application number
DK93300480T
Other languages
Danish (da)
English (en)
Inventor
George Erdos
Original Assignee
Gennum Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gennum Corp filed Critical Gennum Corp
Application granted granted Critical
Publication of DK0554019T3 publication Critical patent/DK0554019T3/da

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Wire Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DK93300480T 1992-01-27 1993-01-22 Fremgangsmåde til fremstilling af en forhøjet kontaktstruktur på en halvlederindretning DK0554019T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CA002075462A CA2075462C (en) 1992-01-27 1992-01-27 Bump structure and method for bonding to a semi-conductor device
US07/836,580 US5293071A (en) 1992-01-27 1992-02-18 Bump structure for bonding to a semi-conductor device

Publications (1)

Publication Number Publication Date
DK0554019T3 true DK0554019T3 (da) 1999-06-21

Family

ID=25675407

Family Applications (1)

Application Number Title Priority Date Filing Date
DK93300480T DK0554019T3 (da) 1992-01-27 1993-01-22 Fremgangsmåde til fremstilling af en forhøjet kontaktstruktur på en halvlederindretning

Country Status (7)

Country Link
US (1) US5293071A (de)
EP (1) EP0554019B1 (de)
JP (1) JP2772606B2 (de)
AT (1) ATE171814T1 (de)
CA (1) CA2075462C (de)
DE (1) DE69321265T2 (de)
DK (1) DK0554019T3 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07231015A (ja) * 1994-02-17 1995-08-29 Sanyo Electric Co Ltd 半導体装置及びその製造方法
KR970053198A (ko) * 1995-12-30 1997-07-29 구자홍 반도체소자의 본딩장치 및 그 제조방법
US5760479A (en) * 1996-02-29 1998-06-02 Texas Instruments Incorporated Flip-chip die attachment for a high temperature die to substrate bond
US6818545B2 (en) * 2001-03-05 2004-11-16 Megic Corporation Low fabrication cost, fine pitch and high reliability solder bump
JP2003045877A (ja) * 2001-08-01 2003-02-14 Sharp Corp 半導体装置およびその製造方法
WO2003063242A1 (en) * 2002-01-16 2003-07-31 Alfred E. Mann Foundation For Scientific Research Space-saving packaging of electronic circuits
US7541275B2 (en) * 2004-04-21 2009-06-02 Texas Instruments Incorporated Method for manufacturing an interconnect
US8022544B2 (en) * 2004-07-09 2011-09-20 Megica Corporation Chip structure
CN101038441B (zh) * 2006-03-14 2010-09-08 南茂科技股份有限公司 凸块制程

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689991A (en) * 1968-03-01 1972-09-12 Gen Electric A method of manufacturing a semiconductor device utilizing a flexible carrier
DE2028819C3 (de) * 1970-06-11 1980-05-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen eines Metallkontakts mit einer Kontakthöhe > 10 µ m
JPS5421165A (en) * 1977-07-18 1979-02-17 Nec Corp Semiconductor device
US4258382A (en) * 1978-07-03 1981-03-24 National Semiconductor Corporation Expanded pad structure
DE3278896D1 (en) * 1981-06-30 1988-09-15 Ibm Method for connecting a semiconductor chip to a substrate and such connection
JPS6149819A (ja) * 1984-08-20 1986-03-11 Shokichi Hayashi 金型のガス抜き装置
JPH0194641A (ja) * 1987-10-05 1989-04-13 Nec Corp 半導体装置
JPH0233929A (ja) * 1988-07-23 1990-02-05 Nec Corp 半導体装置
JPH03198342A (ja) * 1989-12-26 1991-08-29 Nec Corp 半導体装置の製造方法
JPH047839A (ja) * 1990-04-25 1992-01-13 Seiko Epson Corp 集積回路の製造方法
EP0540519B1 (de) * 1990-06-22 1996-03-20 International Business Machines Corporation Verfahren zur Herstellung einer Thermokompressionsverbindung
JPH04180231A (ja) * 1990-11-15 1992-06-26 Fuji Electric Co Ltd 微細バンプ電極を有する半導体装置の製造方法

Also Published As

Publication number Publication date
EP0554019A1 (de) 1993-08-04
CA2075462C (en) 1999-05-04
DE69321265T2 (de) 1999-02-18
DE69321265D1 (de) 1998-11-05
ATE171814T1 (de) 1998-10-15
EP0554019B1 (de) 1998-09-30
CA2075462A1 (en) 1993-07-28
US5293071A (en) 1994-03-08
JPH06224200A (ja) 1994-08-12
JP2772606B2 (ja) 1998-07-02

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