DK0658939T3 - Spændingsdrevet tyristor og fremgangsmåde til fremstilling af denne - Google Patents
Spændingsdrevet tyristor og fremgangsmåde til fremstilling af denneInfo
- Publication number
- DK0658939T3 DK0658939T3 DK94113791T DK94113791T DK0658939T3 DK 0658939 T3 DK0658939 T3 DK 0658939T3 DK 94113791 T DK94113791 T DK 94113791T DK 94113791 T DK94113791 T DK 94113791T DK 0658939 T3 DK0658939 T3 DK 0658939T3
- Authority
- DK
- Denmark
- Prior art keywords
- voltage
- manufacturing
- driven thyristor
- thyristor
- driven
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/40—Thyristors with turn-on by field effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/233—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/291—Gate electrodes for thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31504593A JP3260944B2 (ja) | 1993-12-15 | 1993-12-15 | 電圧駆動型サイリスタおよびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK0658939T3 true DK0658939T3 (da) | 2005-12-27 |
Family
ID=18060770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK94113791T DK0658939T3 (da) | 1993-12-15 | 1994-09-02 | Spændingsdrevet tyristor og fremgangsmåde til fremstilling af denne |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5457329A (da) |
| EP (1) | EP0658939B1 (da) |
| JP (1) | JP3260944B2 (da) |
| KR (1) | KR0146640B1 (da) |
| DE (1) | DE69434562T2 (da) |
| DK (1) | DK0658939T3 (da) |
| TW (1) | TW327244B (da) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5777346A (en) * | 1996-01-16 | 1998-07-07 | Harris Corporation | Metal oxide semiconductor controlled thyristor with an on-field effect transistor in a trench |
| JPH09246523A (ja) * | 1996-03-13 | 1997-09-19 | Mitsubishi Electric Corp | 半導体装置 |
| US6080625A (en) * | 1998-08-26 | 2000-06-27 | Lucent Technologies Inc. | Method for making dual-polysilicon structures in integrated circuits |
| JP3647676B2 (ja) * | 1999-06-30 | 2005-05-18 | 株式会社東芝 | 半導体装置 |
| US6534828B1 (en) * | 2000-09-19 | 2003-03-18 | Fairchild Semiconductor Corporation | Integrated circuit device including a deep well region and associated methods |
| JP4534500B2 (ja) * | 2003-05-14 | 2010-09-01 | 株式会社デンソー | 半導体装置の製造方法 |
| JP4575713B2 (ja) * | 2004-05-31 | 2010-11-04 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
| KR100549010B1 (ko) * | 2004-06-17 | 2006-02-02 | 삼성전자주식회사 | 채널부 홀의 일 측벽에 채널 영역을 갖는 트랜지스터의형성방법들 |
| CN103137658A (zh) * | 2011-11-30 | 2013-06-05 | 成都成电知力微电子设计有限公司 | 半导体器件的含导电颗粒的绝缘体与半导体构成的耐压层 |
| US9306048B2 (en) * | 2012-10-01 | 2016-04-05 | Pakal Technologies Llc | Dual depth trench-gated mos-controlled thyristor with well-defined turn-on characteristics |
| JP2015176891A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社東芝 | 半導体装置 |
| JP2015177010A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JP6830390B2 (ja) * | 2017-03-28 | 2021-02-17 | エイブリック株式会社 | 半導体装置 |
| US11145717B2 (en) * | 2018-10-01 | 2021-10-12 | Pakal Technologies, Inc. | Cellular insulated gate power device with edge design to prevent failure near edge |
| DE102019210681A1 (de) * | 2019-05-31 | 2020-12-03 | Robert Bosch Gmbh | Leistungstransistorzelle und Leistungstransistor |
| CN112750902B (zh) * | 2021-02-05 | 2021-11-02 | 深圳吉华微特电子有限公司 | 一种高抗短路能力的沟槽栅igbt |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3380136D1 (en) * | 1982-04-12 | 1989-08-03 | Gen Electric | Semiconductor device having a diffused region of reduced length and method of fabricating the same |
| EP0159663A3 (en) * | 1984-04-26 | 1987-09-23 | General Electric Company | High-density v-groove mos-controlled thyristors, insulated-gate transistors, and mosfets, and methods for fabrication |
| DE3689680T2 (de) * | 1985-09-30 | 1994-06-23 | Toshiba Kawasaki Kk | Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren. |
| JP3119890B2 (ja) * | 1991-04-16 | 2000-12-25 | 株式会社東芝 | 絶縁ゲート付サイリスタ |
| JP2504862B2 (ja) * | 1990-10-08 | 1996-06-05 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
-
1993
- 1993-12-15 JP JP31504593A patent/JP3260944B2/ja not_active Expired - Fee Related
-
1994
- 1994-02-25 TW TW083101610A patent/TW327244B/zh active
- 1994-08-23 US US08/294,708 patent/US5457329A/en not_active Expired - Lifetime
- 1994-09-02 EP EP94113791A patent/EP0658939B1/en not_active Expired - Lifetime
- 1994-09-02 DK DK94113791T patent/DK0658939T3/da active
- 1994-09-02 DE DE69434562T patent/DE69434562T2/de not_active Expired - Lifetime
- 1994-12-12 KR KR1019940033747A patent/KR0146640B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69434562T2 (de) | 2006-08-10 |
| JP3260944B2 (ja) | 2002-02-25 |
| JPH07169941A (ja) | 1995-07-04 |
| KR950021736A (ko) | 1995-07-26 |
| EP0658939A2 (en) | 1995-06-21 |
| KR0146640B1 (ko) | 1998-08-01 |
| DE69434562D1 (de) | 2006-01-05 |
| US5457329A (en) | 1995-10-10 |
| TW327244B (en) | 1998-02-21 |
| EP0658939B1 (en) | 2005-11-30 |
| EP0658939A3 (en) | 1999-05-19 |
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