DK1866466T3 - Fremgangsmåde til fremstilling af en monokrystallinsk skive med tilnærmelsesvis polygonalt tværsnit - Google Patents

Fremgangsmåde til fremstilling af en monokrystallinsk skive med tilnærmelsesvis polygonalt tværsnit

Info

Publication number
DK1866466T3
DK1866466T3 DK06724135.6T DK06724135T DK1866466T3 DK 1866466 T3 DK1866466 T3 DK 1866466T3 DK 06724135 T DK06724135 T DK 06724135T DK 1866466 T3 DK1866466 T3 DK 1866466T3
Authority
DK
Denmark
Prior art keywords
section
crystal
polygonal cross
approximately polygonal
making
Prior art date
Application number
DK06724135.6T
Other languages
English (en)
Inventor
Anke Luedge
Andris Muiznieks
Helge Riemann
Nikolai Abrosimov
Original Assignee
Pv Silicon Forschungs Und Prod
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pv Silicon Forschungs Und Prod filed Critical Pv Silicon Forschungs Und Prod
Application granted granted Critical
Publication of DK1866466T3 publication Critical patent/DK1866466T3/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DK06724135.6T 2005-04-06 2006-04-04 Fremgangsmåde til fremstilling af en monokrystallinsk skive med tilnærmelsesvis polygonalt tværsnit DK1866466T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005016776A DE102005016776B4 (de) 2005-04-06 2005-04-06 Verfahren zur Herstellung einer einkristallinen Si-Scheibe mit annähernd polygonalem Querschnitt
PCT/EP2006/003196 WO2006105982A1 (de) 2005-04-06 2006-04-04 Verfahren zur herstellung einer einkristallinen si-scheibe mit annähernd polygonalem querschnitt und derartige einkristalline si-scheibe

Publications (1)

Publication Number Publication Date
DK1866466T3 true DK1866466T3 (da) 2010-10-25

Family

ID=36604183

Family Applications (1)

Application Number Title Priority Date Filing Date
DK06724135.6T DK1866466T3 (da) 2005-04-06 2006-04-04 Fremgangsmåde til fremstilling af en monokrystallinsk skive med tilnærmelsesvis polygonalt tværsnit

Country Status (8)

Country Link
US (1) US8337615B2 (da)
EP (1) EP1866466B1 (da)
JP (1) JP4950985B2 (da)
AT (1) ATE473313T1 (da)
DE (3) DE102005063346B4 (da)
DK (1) DK1866466T3 (da)
ES (1) ES2346789T3 (da)
WO (1) WO2006105982A1 (da)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009005837B4 (de) 2009-01-21 2011-10-06 Pv Silicon Forschungs Und Produktions Gmbh Verfahren und Vorrichtung zur Herstellung von Siliziumdünnstäben
JP5464429B2 (ja) * 2010-03-23 2014-04-09 独立行政法人物質・材料研究機構 四角形の断面を有する単結晶シリコンの育成方法
CN102560644A (zh) * 2012-01-14 2012-07-11 天津市环欧半导体材料技术有限公司 一种用于太阳能电池的方形区熔硅单晶生产方法
DE102012022965B4 (de) * 2012-11-19 2018-12-06 Forschungsverbund Berlin E.V. Vorrichtung für das tiegelfreie Zonenziehen von Kristallstäben
CN103489752A (zh) * 2013-09-26 2014-01-01 中国科学院半导体研究所 截面为多边形的晶棒及衬底片表面取向的标识方法
JP2014062044A (ja) * 2013-12-11 2014-04-10 National Institute For Materials Science 四角形の単結晶シリコンウェ−ハ
CN106222745B (zh) * 2016-09-29 2019-04-19 宜昌南玻硅材料有限公司 一种检测用区熔硅单晶棒及其拉制方法
DE102016121680B4 (de) 2016-11-11 2024-05-29 Infineon Technologies Ag Halbleiterwafer und Halbleitervorrichtungen mit einer Sperrschicht und Verfahren zur Herstellung
KR102149338B1 (ko) * 2019-08-02 2020-08-28 안형수 육각형 실리콘 결정 성장 장치 및 방법
CN114686968B (zh) * 2020-12-30 2024-01-30 隆基绿能科技股份有限公司 一种晶体生长控制方法以及装置、晶体生长设备
CN116479523B (zh) * 2023-06-25 2023-09-22 苏州晨晖智能设备有限公司 一种生长非圆柱状硅单晶锭的装置和方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL274893A (da) 1961-04-11
US4072556A (en) * 1969-11-29 1978-02-07 Siemens Aktiengesellschaft Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same
DE2538854B2 (de) * 1975-09-01 1979-02-15 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Einwindige Induktionsheizspule zum tiegelfreien Zonenschmelzen
JPS61186279A (ja) * 1985-02-12 1986-08-19 Sumitomo Electric Ind Ltd 大型矩形ウエハ用単結晶の製造方法
IT1183842B (it) 1985-05-20 1987-10-22 Cmt Costr Mecc & Tec Macchina formatrice e rassodatrice per formaggi a pasta filata quali mozzarelle e provoloni
DE3608889A1 (de) * 1986-03-17 1987-09-24 Siemens Ag Verfahren zum herstellen von einkristallinen halbleiterstaeben mit polygonaler querschnittsform
DE3613949A1 (de) 1986-04-24 1987-10-29 Siemens Ag Vorrichtung zum herstellen von einkristallinem halbleitermaterial
DE3625669A1 (de) * 1986-07-29 1988-02-04 Siemens Ag Induktionsheizer zum tiegelfreien zonenschmelzen
DD263310A1 (de) 1987-08-17 1988-12-28 Akad Wissenschaften Ddr Verfahren zur halbleiterkristallzuechtung aus elektrisch leitfaehigen schmelzen
JPH0196089A (ja) * 1987-10-07 1989-04-14 Osaka Titanium Co Ltd 単結晶の直径制御方法
US5160545A (en) * 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
IL100224A (en) * 1990-12-04 1994-10-21 Dmw Tech Ltd Spray nozzle
JP2874722B2 (ja) 1993-06-18 1999-03-24 信越半導体株式会社 シリコン単結晶の成長方法及び装置
DE10051885B4 (de) * 2000-10-19 2007-07-12 Siltronic Ag Verfahren zum Ziehen eines Einkristalls durch Zonenziehen
DE10137856B4 (de) * 2001-08-02 2007-12-13 Siltronic Ag Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium
DE10216609B4 (de) 2002-04-15 2005-04-07 Siltronic Ag Verfahren zur Herstellung der Halbleiterscheibe
DE10220964B4 (de) * 2002-05-06 2006-11-02 Pv Silicon Forschungs- Und Produktions Ag Anordnung zur Herstellung von Kristallstäben mit definiertem Querschnitt und kolumnarer polykristalliner Struktur mittels tiegelfreier kontinuierlicher Kristallisation
JP2005126283A (ja) * 2003-10-23 2005-05-19 Kyocera Corp 単結晶の育成方法

Also Published As

Publication number Publication date
US20090068407A1 (en) 2009-03-12
DE102005063346B4 (de) 2010-10-28
EP1866466B1 (de) 2010-07-07
US8337615B2 (en) 2012-12-25
JP4950985B2 (ja) 2012-06-13
ES2346789T3 (es) 2010-10-20
WO2006105982A1 (de) 2006-10-12
EP1866466A1 (de) 2007-12-19
DE102005016776A1 (de) 2006-10-12
DE502006007373D1 (de) 2010-08-19
DE102005063346A1 (de) 2007-02-01
DE102005016776B4 (de) 2009-06-18
ATE473313T1 (de) 2010-07-15
JP2008534427A (ja) 2008-08-28

Similar Documents

Publication Publication Date Title
SG144857A1 (en) Semiconductor wafers of silicon and method for their production
KR102001702B1 (ko) β-Ga₂O₃계 단결정의 성장 방법
MY150565A (en) Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation
DK1866466T3 (da) Fremgangsmåde til fremstilling af en monokrystallinsk skive med tilnærmelsesvis polygonalt tværsnit
EP1897976A3 (en) Method for producing silicon single crystal and method for producing silicon wafer
SG142262A1 (en) Method for manufacturing semiconductor single crystal by czochralski technology, and single crystal ingot and wafer manufactured using the same
SG144051A1 (en) Method and device for producing semiconductor wafers of silicon
WO2009025336A1 (ja) Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
EP4245894A3 (en) Method for growing a nitrogen doped single crystal silicon ingot using continuous czochralski method and a single crystal silicon ingot grown by this method
TW200700593A (en) Electromagnetic pumping of liquid silicon in a crystal growing process
CN105506731A (zh) 单晶硅生长氧含量控制技术
WO2009140406A3 (en) Crystal growth apparatus for solar cell manufacturing
WO2011072278A3 (en) Germanium ingots/wafers having low micro-pit density (mpd) as well as systems and methods for manufacturing same
EP2045372A3 (en) Method for growing silicon ingot
TW200722562A (en) Si-doped GaAs single crystal ingot and process for producing the same, and si-doped GaAs single crystal wafer produced from said si-doped gaas single crystal ingot
JP2009057270A (ja) シリコン単結晶の引上方法
CN103451718B (zh) 可连续生产的区熔炉装置及其工艺控制方法
KR20130111253A (ko) 사파이어 단결정 및 그의 제조 방법
EP2045371A3 (en) Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot
WO2008146439A1 (ja) シリコン単結晶の引上げ方法
TW200500507A (en) Process for producing single crystal
TW200942654A (en) Semiconductor wafer of single crystalline silicon and process for its manufacture
JP5375636B2 (ja) シリコン単結晶の製造方法
KR20240044301A (ko) 실린더형 실리콘 잉곳 제조 방법
JP5790766B2 (ja) シリコン単結晶の製造方法