DK339988A - Fotodetektor for ultraviolet straaling og fremgangsmaade til fremstilling af en saadan fotodetektor - Google Patents
Fotodetektor for ultraviolet straaling og fremgangsmaade til fremstilling af en saadan fotodetektorInfo
- Publication number
- DK339988A DK339988A DK339988A DK339988A DK339988A DK 339988 A DK339988 A DK 339988A DK 339988 A DK339988 A DK 339988A DK 339988 A DK339988 A DK 339988A DK 339988 A DK339988 A DK 339988A
- Authority
- DK
- Denmark
- Prior art keywords
- photo detector
- ultraviol
- radiation
- procedure
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH235887 | 1987-06-22 | ||
| CH235887 | 1987-06-22 | ||
| CH138788 | 1988-04-14 | ||
| CH138788 | 1988-04-14 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DK339988D0 DK339988D0 (da) | 1988-06-21 |
| DK339988A true DK339988A (da) | 1988-12-23 |
| DK173856B1 DK173856B1 (da) | 2001-12-27 |
Family
ID=25687516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK198803399A DK173856B1 (da) | 1987-06-22 | 1988-06-21 | Fotodetektor for ultraviolet stråling og fremgangsmåde til fremstilling af en sådan fotodetektor |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4910570A (da) |
| EP (1) | EP0296371B1 (da) |
| JP (1) | JPH0770753B2 (da) |
| DE (1) | DE3876869D1 (da) |
| DK (1) | DK173856B1 (da) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH684971A5 (de) * | 1989-03-16 | 1995-02-15 | Landis & Gyr Tech Innovat | Ultraviolettlicht-Sensor. |
| CH680390A5 (da) * | 1990-05-18 | 1992-08-14 | Landis & Gyr Betriebs Ag | |
| DE59300087D1 (de) * | 1992-07-16 | 1995-03-30 | Landis & Gry Tech Innovat Ag | Anordnung mit einer integrierten farbselektiven Photodiode und einem der Photodiode nachgeschalteten Verstärker. |
| DE69321822T2 (de) * | 1993-05-19 | 1999-04-01 | Hewlett-Packard Gmbh, 71034 Boeblingen | Photodiodenstruktur |
| DE4407730A1 (de) * | 1994-03-08 | 1995-09-14 | Fraunhofer Ges Forschung | Halbleiterdetektor für kurzwellige Strahlung und Verfahren zu dessen Herstellung |
| JP2596380B2 (ja) * | 1994-07-05 | 1997-04-02 | 日本電気株式会社 | ショットキ型赤外線センサ |
| US5814873A (en) * | 1994-07-05 | 1998-09-29 | Nec Corporation | Schottky barrier infrared sensor |
| WO1997018447A1 (en) * | 1995-11-14 | 1997-05-22 | Tom Konstantin Abramovich | Method of measuring ultraviolet light, device for applying said method and a photo-converter |
| WO1997029517A2 (de) * | 1996-02-05 | 1997-08-14 | Laboratorium Für Physikalische Elektronik | Uv-strahlungsdetektor |
| US5945722A (en) * | 1997-05-02 | 1999-08-31 | National Semiconductor Corporation | Color active pixel sensor cell with oxide color filter |
| EP0986110A1 (de) * | 1998-09-10 | 2000-03-15 | Electrowatt Technology Innovation AG | Lichtempfindliches Halbleiterelement und Verwendung zur Regelung von Flammen |
| RU2155418C1 (ru) * | 1999-03-31 | 2000-08-27 | Санкт-Петербургский государственный электротехнический университет | Полупроводниковый датчик ультрафиолетового излучения |
| US6414342B1 (en) | 1999-06-18 | 2002-07-02 | Micron Technology Inc. | Photogate with improved short wavelength response for a CMOS imager |
| US6204524B1 (en) | 1999-07-14 | 2001-03-20 | Micron Technology, Inc. | CMOS imager with storage capacitor |
| DE19936000A1 (de) | 1999-07-30 | 2001-02-08 | Osram Opto Semiconductors Gmbh | UV-Photodetektor mit verbesserter Empfindlichkeit |
| EP1191598B1 (de) * | 2000-01-18 | 2007-12-19 | Siemens Schweiz AG | Verfahren zur Herstellung eines Halbleiter-Photosensors |
| JP2001284629A (ja) * | 2000-03-29 | 2001-10-12 | Sharp Corp | 回路内蔵受光素子 |
| JP4465941B2 (ja) * | 2001-11-22 | 2010-05-26 | 富士ゼロックス株式会社 | 紫外線受光素子 |
| DE10223202A1 (de) * | 2002-05-24 | 2003-12-11 | Fraunhofer Ges Forschung | Photodiode |
| US7719091B2 (en) * | 2002-06-28 | 2010-05-18 | M/A-Com Technology Solutions Holdings, Inc. | Diode with improved switching speed |
| KR100572853B1 (ko) * | 2003-12-26 | 2006-04-24 | 한국전자통신연구원 | 반도체 광센서 |
| DE102005025937B4 (de) * | 2005-02-18 | 2009-11-26 | Austriamicrosystems Ag | Lichtempfindliches Bauelement mit erhöhter Blauempfindlichkeit, Verfahren zur Herstellung und Betriebsverfahren |
| WO2007060758A1 (ja) | 2005-11-24 | 2007-05-31 | Murata Manufacturing Co., Ltd. | 紫外線センサ |
| US8275724B2 (en) * | 2008-10-15 | 2012-09-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of improving system performance and survivability through changing function |
| JP4867782B2 (ja) * | 2007-05-14 | 2012-02-01 | 富士電機リテイルシステムズ株式会社 | 自動販売機 |
| US10132679B2 (en) * | 2014-05-23 | 2018-11-20 | Maxim Integrated Products, Inc. | Ultraviolet sensor having filter |
| JP6933543B2 (ja) * | 2017-09-29 | 2021-09-08 | エイブリック株式会社 | 半導体光検出装置および特定波長の光検出方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3418473A (en) * | 1965-08-12 | 1968-12-24 | Honeywell Inc | Solid state junction device for ultraviolet detection |
| US3560812A (en) * | 1968-07-05 | 1971-02-02 | Gen Electric | High selectively electromagnetic radiation detecting devices |
| US3852591A (en) * | 1973-10-19 | 1974-12-03 | Bell Telephone Labor Inc | Graded bandgap semiconductor photodetector for equalization of optical fiber material delay distortion |
| JPS51285A (da) * | 1974-06-19 | 1976-01-05 | Matsushita Electric Industrial Co Ltd | |
| JPS51144194A (en) * | 1975-06-06 | 1976-12-10 | Hitachi Ltd | A semiconductor photo detector |
| US4032951A (en) * | 1976-04-13 | 1977-06-28 | Bell Telephone Laboratories, Incorporated | Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses |
| FR2363197A1 (fr) * | 1976-08-23 | 1978-03-24 | Ibm | Structure de photo-diode amelioree donnant une reponse en couleur bleue renforcee |
| US4141756A (en) * | 1977-10-14 | 1979-02-27 | Honeywell Inc. | Method of making a gap UV photodiode by multiple ion-implantations |
| DE2800820A1 (de) * | 1978-01-10 | 1979-09-27 | Hermann Dr Ing Mader | Halbleiter-diode |
| US4319258A (en) * | 1980-03-07 | 1982-03-09 | General Dynamics, Pomona Division | Schottky barrier photovoltaic detector |
| JPS5737888A (en) * | 1980-08-19 | 1982-03-02 | Mitsubishi Electric Corp | Photo detector |
| US4544939A (en) * | 1981-08-25 | 1985-10-01 | Rca Corporation | Schottky-barrier diode radiant energy detector with extended longer wavelength response |
| DE3234096A1 (de) * | 1982-09-14 | 1984-03-15 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Bauelemente und arrays aus silizium zur detektion von infrarotem licht |
| JPS59108461A (ja) * | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | 固体撮像装置 |
| US4594605A (en) * | 1983-04-28 | 1986-06-10 | Rca Corporation | Imaging device having enhanced quantum efficiency |
| JPS6057780A (ja) * | 1983-09-07 | 1985-04-03 | Toshiba Corp | 固体撮像装置およびその製造方法 |
| FR2559619B1 (fr) * | 1984-02-10 | 1987-01-16 | Thomson Csf | Dispositif photosensible avec filtres integres pour la separation des couleurs et procede de fabrication |
| US4598305A (en) * | 1984-06-18 | 1986-07-01 | Xerox Corporation | Depletion mode thin film semiconductor photodetectors |
| DE3441922C2 (de) * | 1984-11-16 | 1986-10-02 | Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn | Fotokathode für den Infrarotbereich |
| US4710589A (en) * | 1986-10-21 | 1987-12-01 | Ametek, Inc. | Heterojunction p-i-n photovoltaic cell |
-
1988
- 1988-05-26 DE DE8888108399T patent/DE3876869D1/de not_active Expired - Fee Related
- 1988-05-26 EP EP88108399A patent/EP0296371B1/de not_active Expired - Lifetime
- 1988-06-16 US US07/207,715 patent/US4910570A/en not_active Expired - Lifetime
- 1988-06-21 DK DK198803399A patent/DK173856B1/da not_active IP Right Cessation
- 1988-06-21 JP JP63151361A patent/JPH0770753B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0296371A1 (de) | 1988-12-28 |
| US4910570A (en) | 1990-03-20 |
| DK339988D0 (da) | 1988-06-21 |
| JPH0770753B2 (ja) | 1995-07-31 |
| JPS6431472A (en) | 1989-02-01 |
| DK173856B1 (da) | 2001-12-27 |
| EP0296371B1 (de) | 1992-12-23 |
| DE3876869D1 (de) | 1993-02-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DK339988A (da) | Fotodetektor for ultraviolet straaling og fremgangsmaade til fremstilling af en saadan fotodetektor | |
| DK302187A (da) | Indretning til fastholdelse af et kateter og fremgangsmaade til fremstilling af samme indretning | |
| DK248688A (da) | Fremgangsmaade til fremstilling af et kasselignende rammeelement | |
| DK373584D0 (da) | Implantat indeholdende et regulatorisk peptid og fremgangsmaade til dts fremstilling | |
| DK205884A (da) | Indretning til fremstilling og reflektion af infraroed eller ultraviolet straaling | |
| DK312482A (da) | Fremgangsmaade til fremstilling af et papir,saaledes fremstillet papir og dettes anvendelse | |
| NO914401D0 (no) | Fotodetektor | |
| DK166336C (da) | Multifokal oejelinse og fremgangsmaade til fremstilling af en saadan | |
| DE69116770D1 (de) | Strahlungsdetektor | |
| DK166088A (da) | Fremgangsmaade til fremstilling af kvaternaere esteraminer og anvendelse heraf | |
| DK229687D0 (da) | Fremgangsmaade og genstand til dannelse af en forbindelse mellem genstande | |
| NO914481D0 (no) | Fremgangsmaate for fremstilling og anvendelse av substituerte azoler | |
| DK530784D0 (da) | Scintillationskrystal til en straalingsdetektor og fremgangsmaade til fremstilling af scintillationskrystallen | |
| DK485284A (da) | Indretning til en optisk fiber og fremgangsmaade til fremstilling af en saadan indretning | |
| NO810570L (no) | Fotoelektrisk detektor og fremgangsmaate til fremstilling derav | |
| DK272489A (da) | Fremgangsmaade til forbedring af straalingsfoelsomme indretninger | |
| DK597986A (da) | Justerings- og proevestandardelement og fremgangsmaade til fremstilling af et saadant element | |
| NO172472C (no) | For og fremgangsmaate til fremstilling derav | |
| DK378588D0 (da) | Fremgangsmaade til bearbejdning af et emne ved hjaelp af en laserstraale | |
| DK494381A (da) | Veterinaer-praeparat og fremgangsmaade til fremstilling af et macrolid | |
| DK424481A (da) | Fremgangsmaade og arrangement til resning af en bygning | |
| DK96784A (da) | Lysleder til en scintillationskrystal i en straalingsdetektor og fremgangsmaade til fremstilling af lyslederen | |
| DK607683D0 (da) | Human endogen cancer-regulerende faktor og fremgangsmade til fremstilling af en sadan faktor | |
| DK126589A (da) | Hoereapparat og fremgangsmaade til fremstilling af et hus til et hoereapparat | |
| DK178289D0 (da) | Fremgangsmaade til fremstilling af gamma-pyroner |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AHS | Application shelved for other reasons than non-payment | ||
| AHB | Application shelved due to non-payment | ||
| B1 | Patent granted (law 1993) | ||
| PBP | Patent lapsed |
Country of ref document: DK |