EP0583473A4 - Method and device for treatment of articles in gas-discharge plasma - Google Patents

Method and device for treatment of articles in gas-discharge plasma

Info

Publication number
EP0583473A4
EP0583473A4 EP92911913A EP92911913A EP0583473A4 EP 0583473 A4 EP0583473 A4 EP 0583473A4 EP 92911913 A EP92911913 A EP 92911913A EP 92911913 A EP92911913 A EP 92911913A EP 0583473 A4 EP0583473 A4 EP 0583473A4
Authority
EP
European Patent Office
Prior art keywords
product
gas
processed
vacuum
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP92911913A
Other languages
English (en)
Russian (ru)
Other versions
EP0583473A1 (fr
EP0583473B1 (fr
Inventor
Leonid Pavlovich Sablev
Anatoly Afanasievich Andreev
Sergei Nikolaevich Grigoriev
Alexandr Sergeevich Metel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NOVATECH-INSTRUMENT, LTD.
Original Assignee
NAUCHNO-PROIZVODSTVENNOE PREDPRIVATIE "NOVATEKH"
N PROIZV PREDPRIVATIE NOVATEKH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU4938768 external-priority patent/RU2010031C1/ru
Priority claimed from SU915002528A external-priority patent/RU1834911C/ru
Priority claimed from SU5002413 external-priority patent/RU2022056C1/ru
Priority claimed from SU5008181 external-priority patent/RU2003196C1/ru
Priority claimed from SU5008180 external-priority patent/RU2002333C1/ru
Priority claimed from SU5018360 external-priority patent/RU2071992C1/ru
Priority claimed from SU5024440 external-priority patent/RU2061092C1/ru
Priority claimed from SU925024441A external-priority patent/RU1834912C/ru
Priority claimed from SU5027759 external-priority patent/RU2037561C1/ru
Application filed by NAUCHNO-PROIZVODSTVENNOE PREDPRIVATIE "NOVATEKH", N PROIZV PREDPRIVATIE NOVATEKH filed Critical NAUCHNO-PROIZVODSTVENNOE PREDPRIVATIE "NOVATEKH"
Priority claimed from PCT/RU1992/000088 external-priority patent/WO1992019785A1/fr
Publication of EP0583473A1 publication Critical patent/EP0583473A1/fr
Publication of EP0583473A4 publication Critical patent/EP0583473A4/en
Publication of EP0583473B1 publication Critical patent/EP0583473B1/fr
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/338—Changing chemical properties of treated surfaces
    • H01J2237/3387—Nitriding

Definitions

  • the process is relatively high. - 2 - voltage on the product (400-1000 ⁇ ), it is connected to a smoldering discharge in an arc (especially from the initial stage of the process). Non-hazardous arcs cause erosion of the processed product, but 5 are still larger than the direct spray. Decreases in arcing are achieved by the degree of conduction of the process (reduction of the current and voltage of the discharge). However, this measure leads to a decrease in productivity.
  • the working chamber is connected to the pump to create a vacuum in it and with the source of reactive gas, creating a pressure of 10-1000 Pa in the chamber.
  • the method includes heating the product-casing, placed in a working chamber-anode in the environment of the reactive gas (nitrogen mixed with the chemical), in the process
  • the reactive gas nitrogen mixed with the chemical
  • nda-, ⁇ susches ⁇ vlyayuschee vysheu ⁇ azanny s ⁇ s ⁇ b and s ⁇ de ⁇ zhaschee is ⁇ chni ⁇ ⁇ s ⁇ yann ⁇ g ⁇ ⁇ a, ny ele ⁇ iches ⁇ i associated with ⁇ a ⁇ d ⁇ m and an ⁇ d ⁇ , ⁇ meschennymi in s ⁇ edu ⁇ ea ⁇ tsi ⁇ nn ⁇ g ⁇ ⁇ i ⁇ nizhenya ⁇ m gas pressure (g ⁇ , ⁇ , 68783).
  • the indicated device is equipped with a working camera, and a quick-processed product is placed in a convenient mode.
  • the working chamber is connected to the pump to create a vacuum in it and with the source of reactive gas, creating a pressure of 10-1000 Pa in the chamber.
  • a smoldering discharge is created between the battery and the anode.
  • the intensification of a smoldering discharge (an increase in the discharge current) is carried out with the help of it. We pour it off.
  • An individual food source serves as a source of spiraling. Acceleration of electrics for gas gas activation is carried out by one more source of direct current, the quick-connect to the mains is plugged in
  • ⁇ na ⁇ alivae maya s ⁇ i ⁇ al not ⁇ bes ⁇ echivae ⁇ d ⁇ s ⁇ a ⁇ chnuyu for ⁇ b ⁇ ab ⁇ i b ⁇ ly ⁇ i ⁇ mass ele ⁇ n ⁇ v feed products, ⁇ e ⁇ mu v ⁇ emya ⁇ b ⁇ ab ⁇ i * in chas ⁇ n ⁇ s ⁇ i, v ⁇ emya nag ⁇ eva products za ⁇ yagivae ⁇ sya, ch ⁇ ⁇ iv ⁇ di ⁇ ⁇ ⁇ izv ⁇ di ⁇ eln ⁇ s ⁇ i ⁇ b ⁇ ab ⁇ i reduction products.
  • Izves ⁇ ya ⁇ us ⁇ ys ⁇ v ⁇ ⁇ b ⁇ ab ⁇ i for manufacturing ⁇ lazme gaz ⁇ v ⁇ g ⁇ ⁇ az ⁇ yada, ⁇ susches ⁇ vlyayuschee vysheu ⁇ azayany s ⁇ s ⁇ b and s ⁇ de ⁇ zhaschee is ⁇ chni ⁇ ⁇ s ⁇ yann ⁇ g ⁇ ⁇ a, ele ⁇ iches ⁇ i svya- coupled with in ⁇ eg ⁇ aln ⁇ - ⁇ l ⁇ dnym ⁇ a ⁇ d ⁇ m and an ⁇ d ⁇ m, ⁇ ye ⁇ azmescheny in va ⁇ uumn ⁇ y ⁇ ame ⁇ e in s ⁇ ede ⁇ ab ⁇ cheg ⁇ ⁇ i ⁇ nizhenn ⁇ m gas pressure ( ⁇ Z, ⁇ , 4734178) .
  • ⁇ ⁇ sya ⁇ vu nas ⁇ yascheg ⁇ iz ⁇ b ⁇ e ⁇ eniya was ⁇ l ⁇ zhena task ⁇ az ⁇ ab ⁇ i s ⁇ s ⁇ ba ⁇ b ⁇ ab ⁇ i products ⁇ lazme gaz ⁇ v ⁇ g ⁇ * ⁇ az ⁇ yada in ⁇ m would v ⁇ zbuzhdazh ⁇ a ⁇ y va ⁇ uumn ⁇ -dug ⁇ v ⁇ y 5 ⁇ az ⁇ yad, ch ⁇ ⁇ zv ⁇ lil ⁇ would s ⁇ ani ⁇ chis ⁇ u ⁇ ve ⁇ n ⁇ s ⁇ i ⁇ b ⁇ aba ⁇ yvaem ⁇ g ⁇ products and ⁇ asshi ⁇ i ⁇ Te ⁇ n ⁇ l ⁇ giches ⁇ ie v ⁇ z- m ⁇ zhn ⁇ s ⁇ i and s ⁇ zdanie us ⁇ ys ⁇ va ⁇ b ⁇ ab ⁇ i products in ⁇ lazme gaz ⁇ v ⁇ g ⁇ ⁇ az ⁇ y
  • the main heating of the processed product for the operation of heaters can also be carried out and the floating potential of the product is driven by the availability of gas
  • the product is free-flowing when the product is fused to a
  • V-devices for the separation of electric equipment can be installed with the option of returning to a non-profitable place.
  • Means for the separation of elec- trons can be carried out in the form of a vane diaphragm, vials that are simply interposed are not compatible with
  • Means for the separation of elec- trons can be made in the form of a disk installed with a negative voltage chamber.
  • an integral and clean housing has been installed 5 flaxes with the possibility of cornering the room for a working environment of 180 °
  • ch ⁇ by in us ⁇ ys ⁇ ve was ⁇ edusm ⁇ ena ⁇ as ⁇ y- trolled mid ⁇ eya having tsen ⁇ aln ⁇ e ⁇ ve ⁇ s ⁇ ie, s ⁇ edinennaya with ⁇ itsa ⁇ elnym ⁇ lyus ⁇ m iyadividualn ⁇ g ⁇ is ⁇ chni ⁇ a ⁇ s ⁇ yann ⁇ -0 g ⁇ ⁇ a and ⁇ azmeschennaya between s ⁇ eds ⁇ v ⁇ m for se ⁇ a ⁇ atsii ele ⁇ - ⁇ n ⁇ z ⁇ d ⁇ lni ⁇ elnym an ⁇ d ⁇ m.
  • the sprayed target may be located in conjunction with an optional anode.
  • the sprayed target was executed in the form of a 5 disk, which has a central result.
  • an additional aeode be produced in the form of a ring, and, therefore, the area of the transverse section of the area - 9 - the ring of the additional anode was the same as the larger area of the cross section of the area of dispersal of the streamers.
  • a sprayed target may also be performed as a fully-equipped cistern, and the area of a direct spray is a central result of a sprayed target.
  • the sprayed target was produced as a collection of the other arched plates, installed in the process, if necessary,
  • FIG. 4 is a general diagram of another embodiment of a device for fig. 3; 5 Fig. 5- Generally, one of the options for gaining the advantage of a device for fig. Fig.6 - the general scheme of gaining another version of the performance of the device igg; Fig. 7 - the general scheme of another embodiment of the device for fig. 6; Paragraph 8- Generally, one of the reasons for the performance of the implementation of the provisions of Paragraph 4 and 4; FIG. 3.
  • FIG. 8 General terms of the other embodiment of the device, as agreed to the invention of FIG. 8; Fig. ⁇ - Generally, one of the options for gaining ownership of the device is Fig. 9; sig. ⁇ - a general view of yet another version of the superior device ⁇ ⁇ Consequently ⁇ ⁇ ⁇ ⁇ ; ph.
  • FIG. 3- Generally, one of the variants of the performance of the device is agreed to by the invention, for example, and 4; Fig. 4-section of the dependence on the industrial productivity of the processed product from the depth of the layer for the quick service, the obtained performance.
  • the method of processing products in a plasma of a gas discharge is concluded by the way between the anode :. and iya ⁇ eg ⁇ aln ⁇ - ⁇ l ⁇ dnym ⁇ a ⁇ d ⁇ m dv ⁇ e ⁇ u ⁇ eyacha ⁇ y va ⁇ uumn ⁇ -dug ⁇ v ⁇ ' ⁇ ⁇ az ⁇ yad, ⁇ v ⁇ dya ⁇ va ⁇ uumn ⁇ - ⁇ lazmeyanuyu ⁇ b ⁇ ab ⁇ u ⁇ b ⁇ aba ⁇ yvaem ⁇ g ⁇ products ⁇ u ⁇ em eg ⁇ nag ⁇ eva d ⁇ ⁇ ab ⁇ chey ⁇ em ⁇ e ⁇ a ⁇ u ⁇ y and vyde ⁇ zh ⁇ u eg ⁇ in zadann ⁇ m ⁇ em ⁇ e ⁇ a ⁇ u ⁇ n ⁇ g ⁇ ezhime in s ⁇ ede ⁇ ab ⁇ cheg ⁇ gas.
  • the two-phase vacuum is separated between the gas-oil and gas-oil - II - ⁇ raz ⁇ yad).
  • the last stage is created by the initialization of the working gas by elec- trons, which are sintered from the metal-gas phase of the degree of plasma of a vacuum discharge.
  • the non-mainstream part-way is controlled by thermally-cooled products.
  • the working process in this process must not be warmed up, if the process is eroded. This temperature depends on the temperature of the melting material. High values of a discharged elec- tric discharge are similar to arcing discharges due to the increase in the degree of initialization of the plasma of the gas, and, therefore,
  • the electrical supply is small, and it is generally known that electric spraying of the product is not sprayed • the appliance is not damaged
  • the positive user potential which is supplied by the cathode and anode, makes up a few tens of volts (usually below 100 B). With this, the capacity allocated to the anode can reach 60% of the total available storage capacity. When the potential on the product is not possible, it is not possible to remove some spots that cause erosion5 of the processed product.
  • ⁇ sduchae, ⁇ gda ne ⁇ b ⁇ dim ⁇ s ⁇ ani ⁇ is ⁇ dny: Class chis ⁇ y l ⁇ ve ⁇ n ⁇ s ⁇ i ⁇ b ⁇ aba ⁇ yvaemyzh izdezhy ⁇ n ⁇ si ⁇ eln ⁇ neb ⁇ lyi ⁇ l weight, ⁇ dn ⁇ m of va ⁇ ian ⁇ v vy ⁇ lneniya s ⁇ s ⁇ ba, s ⁇ glasn ⁇ iz ⁇ b ⁇ e ⁇ eniyu, nag ⁇ ev ⁇ b ⁇ aba ⁇ yvaem ⁇ g ⁇ products d ⁇ ⁇ ab ⁇ chey ⁇ em ⁇ e ⁇ a ⁇ u ⁇ y ⁇ susches ⁇ vlyayu ⁇ lu ⁇ em ⁇ dachi ⁇ l ⁇ zhi ⁇ eln ⁇ - g ⁇ ⁇ entsiala on ⁇ b ⁇ aba ⁇ yvaem ⁇ e izdezhe and zyde ⁇ zh ⁇
  • the temperature range in the plasma of the gas discharge is realized at the floating potential on the processed product.
  • Floating potential accepts all kinds of food, located in the plasma and on the external source of food. • . not - 14 - voltage is applied. Due to the large mobility of electric power (in comparison with the ions), it is self-propelled that it is in good condition that it is in good condition If the product is ironed, if it is removed from voltage, it may be warmed up if it is in good condition, and it must be disposed of at a reasonable price.
  • the vessel of the negative floating potential is lacking, so that the foreign bomb caused by it will reduce the dispersion of the material. (Floating potential in the plasma below the spray of material).
  • the method of the device is agreed upon by heating the product to be manufactured by the manufacturer and securing the product from a given geotherm. Ingevale in the plasma of a gas discharge is provided by the floating and floating generation on the processed product.
  • Lsted 2 has a screen 10, which works on stage 2 as a non-working II and as a working 12 for part 2.
  • Part 13 separates the volume of the camera I into two parts 17 and 18.
  • Part 18 is the working volume of the camera I, and 5 part 17 is optional and intimidates for emissions. effects of part 18.
  • the device is equipped with a patented device, which is attached to the fig. 2, performed a similar device ⁇ ⁇ ко ⁇ ⁇ ⁇ .
  • the device is equipped with an anode 22, installed on a non-hazardous, non-hazardous installation.
  • anode 22 installed on a non-hazardous, non-hazardous installation.
  • - 20 - e ⁇ e ⁇ n ⁇ with v ⁇ zm ⁇ zhn ⁇ s ⁇ yu ⁇ as ⁇ l ⁇ zheniya ⁇ b ⁇ aba ⁇ yvaem ⁇ g ⁇ ⁇ zde ⁇ iya 5 ⁇ a ⁇ d ⁇ m between 2 and 13 s ⁇ eds ⁇ m an ⁇ d ⁇ m 22 dvu ⁇ zitsi ⁇ nny ⁇ e ⁇ e ⁇ lyuchagel 23 s ⁇ edinenny with is ⁇ chni- ⁇ m 9 ⁇ ya ⁇ n ⁇ g ⁇ g ⁇ a an ⁇ d ⁇ m and 3 and 22 and 24 bl ⁇ 5 5sh ⁇ avleniya dvu ⁇ zitsi ⁇ nnym ⁇ e ⁇ e ⁇ lyucha ⁇ e ⁇ em 23 v ⁇ d ⁇
  • the variant of the invention is agreed upon by the company, which is available on php. 3, Similar to the device of the Russian Federation; and 2.
  • E ⁇ va ⁇ ian ⁇ vy ⁇ lneniya us ⁇ ys ⁇ a naib ⁇ lee tseles ⁇ - ⁇ b ⁇ azn ⁇ is ⁇ lz ⁇ va ⁇ for ⁇ vysheniya izn ⁇ s ⁇ s ⁇ y ⁇ s ⁇ i izde- ly, ⁇ shedshi ⁇ va ⁇ uumn ⁇ - ⁇ azmennuyu in chas ⁇ n ⁇ s ⁇ i ⁇ imi ⁇ - Yu ⁇ e ⁇ miches ⁇ uyu ⁇ b ⁇ ab ⁇ u, ⁇ u ⁇ em ⁇ sleduyuscheg ⁇ applying iz n ⁇ s ⁇ s ⁇ y ⁇ g ⁇ ⁇ y ⁇ iya of s ⁇ edineniya mega ⁇ la from ⁇ g ⁇ izg ⁇ vlen in ⁇ eg ⁇ aln ⁇ ⁇ dny ⁇ a ⁇ d-2, with We will work with gas.
  • Part of the process generator is a version of the device that is identical to the previous version of
  • the embodiment of the device ⁇ for fig. 4 for reacting the method, according to the invention, has been carried out by a similar device ⁇ ⁇ ⁇ ⁇ ⁇ .
  • camera I located on the outside of the camera I.
  • camera I is installed with cylinder 44 between the 14th part of the 13th unit and the 45th part of the building. In 44, in the immediate vicinity, there is a disc of 50 with a total of 5 tuples;
  • ⁇ as ⁇ ylyae maya Misha Hb 52 ⁇ isyvaem ⁇ m ⁇ a ⁇ iange ⁇ Y ⁇ - neniya usg ⁇ ysg ⁇ a ⁇ y ⁇ lne to form ⁇ dis ⁇ a 54 imeyuscheg ⁇ tse ng ⁇ a ⁇ n ⁇ e ⁇ g ⁇ e ⁇ s ⁇ ie 53.
  • the sprayed target 52 is connected to a fully-fledged direct source, with the best available source 55, which is emitted 56, which is connected to a second-hand transmitter.
  • DIGITAL DEVICE ⁇ executed analogous device igg. 9.
  • FIG. 10 (Fig. 10) was performed in the form of a full cylinder 58, anode 22 was fitted in the form of a ring 59, and medium 13 for the recovery of the disease was performed in the form of a disk 60, a 61
  • Eg ⁇ va ⁇ ian ⁇ us ⁇ ys ⁇ va tseles ⁇ b ⁇ azn ⁇ is ⁇ z ⁇ va ⁇ in ⁇ ensi ⁇ i ⁇ atssh ⁇ ⁇ tsessa for applying izn ⁇ s ⁇ y ⁇ g ⁇ ⁇ y ⁇ iya of ma ⁇ e ⁇ iala ⁇ as ⁇ ylyaem ⁇ y target 52 ⁇ a izde- 5 Lie 47 ⁇ shedshee va ⁇ uumn ⁇ - ⁇ lazmennuyu in chas ⁇ n ⁇ s ⁇ i ⁇ imi ⁇ - ⁇ e ⁇ miches ⁇ uyu ⁇ b ⁇ ab ⁇ u. - 26 - in part of the technology for the implementation of a vacuum-flame treatment, including heating and baking, this process is performed similarly to the previous one.
  • FIG. 12 _ The device, according to the invention, which implements the Patent No. 5 and the present invention is illustrated in FIG. 12 _; a similar analog device was used.
  • Eg ⁇ va ⁇ iang us ⁇ ys ⁇ va zhela ⁇ eln ⁇ is ⁇ lz ⁇ a ⁇ for ⁇ lucheniya vys ⁇ aches ⁇ enny ⁇ u ⁇ chnyayuschi ⁇ ⁇ y ⁇ y, ⁇ s ⁇ u ⁇ i ⁇ a ⁇ m ⁇ ns ⁇ u ⁇ ivn ⁇ m ⁇ y ⁇ lnenii target 52 ⁇ ez ⁇ snizhae ⁇ sya ve ⁇ ya ⁇ n ⁇ s ⁇ v ⁇ zni ⁇ n ⁇ voniya dug ⁇ vy ⁇ ⁇ az- ⁇ yad ⁇ v at its ⁇ ve ⁇ n ⁇ s ⁇ i, s ⁇ ed ⁇ a ⁇ eln ⁇ , is ⁇ lyuchae ⁇ sya ⁇ ya ⁇ enie ⁇ a ⁇ eln ⁇ y ⁇ azy in nan ⁇ si. ⁇ . on the product 47 sales.
  • E ⁇ va ⁇ ian ⁇ vy ⁇ lneniya us ⁇ ys ⁇ a tseles ⁇ b ⁇ azn ⁇ is ⁇ lz ⁇ va ⁇ ⁇ i ⁇ susches ⁇ vlenii nag ⁇ eva woode Leah 5 and e g ⁇ ⁇ yde ⁇ zhni ⁇ i ⁇ lavayuschem ⁇ entsia ⁇ e for ⁇ vyshe Nia e ⁇ e ⁇ iv- 5 n ⁇ s ⁇ i ⁇ tsessa va ⁇ uumn ⁇ - ⁇ lazmenn ⁇ y ⁇ b ⁇ ab ⁇ i woode ly, ⁇ e imusches ⁇ venn ⁇ from diele ⁇ iches ⁇ i ⁇ ma ⁇ e ⁇ ial ⁇ v.
  • a negative stage 2 receives a voltage from a source 9 of a continuous source.
  • a vacuum system that does not burn (it is not shown on the drawing, it is not known to be used).
  • chg ⁇ electronic throttles are limited to a large number of geophysical and physical properties; For such high values, the gas plasma ⁇ hour 18 of the chamber I has a high degree of initiation (dozens of percentages), and it is quite high.
  • the anode of the 3rd section is 5 the latest of the heating. ⁇ n ⁇ l ⁇ em ⁇ e ⁇ a ⁇ u ⁇ y ⁇ izv ⁇ di ⁇ sya with ⁇ m ⁇ schyu ⁇ e ⁇ m ⁇ a ⁇ y 19 za ⁇ e ⁇ le nn ⁇ y on iz d ⁇ lai 5.
  • product 5 is maintained at a predetermined gem-reprocessing unit, while there is a short supply of gas, it is saturated with gas 5 - 29 - the process of vacuum-plasma, in particular chemical-thermal treatment, is illustrated.
  • gas 5 - 29 - the process of vacuum-plasma, in particular chemical-thermal treatment, is illustrated.
  • ⁇ Fortgrican ** To reduce the discharge rate, the discharge is the smallest possible stable existence of the discharge; below 5 discharge, there is an unstable one.
  • step 2 a variety of different metals are used, and so dozens of tens of amperes.
  • This product is a 5th product and a vacuum-plasma-processed, original source class is available. This is essentially essential when a vacuum-plasma, in particular, chemical-thermo-processing of products, is used to process the product,
  • the device is out of 5 on 5, it is possible to use the same way as it is and the device is on, but for this I have to wait 23.
  • ⁇ e ⁇ ; Including 25 - 31 - is located at the position of P, and the vacuum circuitry (voltage, voltage) is inadequate so that there is no 5 P ⁇ i ga ⁇ m s ⁇ s ⁇ be nag ⁇ eva and vyde ⁇ zh ⁇ i in zadann ⁇ m ⁇ em ⁇ e ⁇ a ⁇ u ⁇ n ⁇ m in ⁇ e ⁇ vale m ⁇ zhn ⁇ ⁇ em ⁇ e ⁇ a ⁇ u ⁇ u with d ⁇ sgag ⁇ chn ⁇ y d ⁇ ya ⁇ a ⁇ gi ⁇ i- s ⁇ e ⁇ enyu ⁇ chn ⁇ s ⁇ i ⁇ dtse ⁇ yaiva ⁇ , vyde ⁇ zhivaya ⁇ a ⁇ ame ⁇ y va ⁇ uumn ⁇ -dug ⁇ v ⁇ g ⁇ ⁇ az ⁇ yada ⁇ s ⁇ yannymi on ne ⁇ b ⁇ dim ⁇ m u ⁇ vne, ⁇ eg ⁇ mu ⁇ adae ⁇ in ne ⁇
  • the previous process is a vacuum-plasma, in particular a chemical-protected process, there is a
  • Kompensating unit 4 source 37 available paths for e ⁇ g ⁇ ⁇ e ⁇ vedeniya ⁇ tsessa nag ⁇ eva articles 5 ⁇ ⁇ l ⁇ zhigeln ⁇ m ⁇ entsiale ⁇ e ⁇ e ⁇ lyuchagel 25 of ⁇ l ⁇ zhe- Nia I ⁇ e ⁇ ev ⁇ digsya in ⁇ zhenie P, ⁇ esg ⁇ az ⁇ yad ⁇ e ⁇ vv ⁇ digsya with an ⁇ da an ⁇ d 3 to 22 and 4 de ⁇ zhagel ⁇ ds ⁇ e- dinyae ⁇ sya ⁇ e ⁇ e ⁇ lyuchagelem 38 ⁇ isg ⁇ chni ⁇ u 37.
  • Drill testing was carried out while drilling in steel, containing, andass.%: C-0.36; 8 ⁇ -0.2; ⁇ -0.5; Cr - ⁇ ; It is the rest, with the following drilling mode: 0 - the number of operations - 8430 rpm,
  • the average increase in exhaustion rate was #80 #. 5 ⁇ us ⁇ ys ⁇ ve, iz ⁇ b ⁇ azhenya ⁇ m on ⁇ ig.5, ⁇ i v ⁇ zbuzhdenii va ⁇ uumn ⁇ -dug ⁇ v ⁇ g ⁇ ⁇ az ⁇ yada ⁇ a ⁇ d ⁇ m between 2 and 3 an ⁇ d ⁇ m i ⁇ - us me ⁇ alla, ⁇ as ⁇ s ⁇ anyayuschiesya with ⁇ ab ⁇ chey ⁇ ve ⁇ n ⁇ s ⁇ i 12 ⁇ a ⁇ da 2 ⁇ ⁇ yam ⁇ lineynym ⁇ ae ⁇ iyam in Part I 18 ⁇ bema ⁇ ame ⁇ y not ⁇ adayu ⁇ .
  • Pa ⁇ ame ⁇ y ⁇ tsessa az ⁇ i ⁇ vaniya ⁇ a ⁇ tsialn ⁇ e pressure az ⁇ a - 1,30x10 ⁇ Pa, ⁇ va ⁇ uumn ⁇ dug ⁇ v ⁇ g ⁇ ⁇ az ⁇ ya-da-0 60 ⁇ , ⁇ in s ⁇ len ⁇ ide 49 ⁇ dbi ⁇ alsya ⁇ a ⁇ y value ch ⁇ - would na ⁇ yazhenie ⁇ a ⁇ d ⁇ m between 2 and 22 an ⁇ d ⁇ m s ⁇ s ⁇ avlyal ⁇ 80 ⁇ , v ⁇ emya ⁇ lucheniya az ⁇ i ⁇ vanya ⁇ g ⁇ a layer with a thickness of 15 ⁇ m was 12 minutes.
  • the expanded target 52 (disc 54) is made from the material of the acquisition.
  • 52 When supplied to a sprayed target, 52 is highly porous and has a negative potential of 57 The dusted material is deposited on the 47th site, resulting in a tamper-resistant spray.
  • a mixture of gases consisting of argoya and nitrogen is used.
  • the device is designed to perform and intensify the process of applying the spray on item 47, which, in fact, has a vacuum, in particular. To process, and to increase the uniformity of applying to the thickness.
  • 3.7 mkm / h - product 47 is installed in the center of the target 52; 5 3.0 ⁇ m / h - version 47 is installed in the upper part of the target 52 for the direction of the electric current of the plasma.
  • the device is equipped with FIG. 12 and 12 and allows you to intensify and 0 intensify the process of applying spray to the products 47, which have been evacuated by the plasma.
  • the concentration of the target 52 ⁇ y ⁇ lnenie target 52 as iz ⁇ zh ⁇ vanyay ⁇ ⁇ dna ⁇ d ⁇ ug ⁇ y dug ⁇ b ⁇ azny ⁇ ⁇ las ⁇ in 66 snizhae ⁇ ve ⁇ ya ⁇ n ⁇ s ⁇ v ⁇ zni ⁇ n ⁇ veniya dug ⁇ vy ⁇ ⁇ az ⁇ yad ⁇ v at its ⁇ ve ⁇ n ⁇ s ⁇ i and ⁇ a ⁇ sleds ⁇ vie, is ⁇ lyu- chae ⁇ sya v ⁇ zm ⁇ zhn ⁇ s ⁇ ⁇ yavleniya ⁇ a ⁇ el me ⁇ alla ⁇ i ⁇ as ⁇ ylenii0 target 52.
  • the device is quicker to increase and intensify the process of spraying the product, which results in 5 vacuum-related, especially
  • a bundle of source 67 source parts is handled by the manufacturer. It is published 5 and is designed to operate, activate and heat. Due to the high uniformity of the accessory of the accelerated parts of the cross section of the bundle, it is also more efficient to keep the cooler.
  • Izves ⁇ n ⁇ , ch ⁇ ele ⁇ - 5 ⁇ nnaya b ⁇ mba ⁇ di ⁇ v ⁇ a ⁇ ve ⁇ n ⁇ s ⁇ i Do not disrupt the performance of the class; 0 ⁇ zm ⁇ zhn ⁇ s ⁇ ⁇ vedeniya in ⁇ ensivn ⁇ g ⁇ ⁇ tsessa va ⁇ uumn ⁇ - ⁇ lazmeyan ⁇ y ⁇ b ⁇ ab ⁇ i ⁇ i ⁇ lavayuschem ⁇ entsiale without ⁇ dachi na ⁇ yazheniya on izdezhya ⁇ zv ⁇ lyae ⁇ ⁇ susches ⁇ vlya ⁇ ⁇ tsess without ⁇ n ⁇ lya ⁇ em ⁇ s ⁇ a ⁇ u ⁇ y on izdeliya ⁇ , ch ⁇ ⁇ s ⁇ benn ⁇ su ⁇ tses ⁇ - venn ⁇ ⁇ i ⁇ b ⁇ ab ⁇ e mel ⁇ azme ⁇ ny ⁇ izdezhy
  • P ⁇ vedenie ⁇ tsessa va ⁇ uumn ⁇ - ⁇ lazmenn ⁇ y ⁇ b ⁇ a- b ⁇ i ⁇ i ⁇ l ⁇ zhi ⁇ eln ⁇ m ⁇ entsiale ⁇ zv ⁇ lyae ⁇ is ⁇ lyuchi ⁇ z ⁇ zm ⁇ zhn ⁇ s ⁇ v ⁇ zni ⁇ ya ⁇ veniya dug ⁇ vy ⁇ ⁇ az ⁇ yad ⁇ v on izdeliya ⁇ (za ⁇ zhdeniya on izdezhya ⁇ ⁇ a ⁇ dny ⁇ ⁇ ya ⁇ en, ch ⁇ in sv ⁇ yu ⁇ che- ⁇ ed, ⁇ zv ⁇ lyae ⁇ ves ⁇ i ⁇ tsess va ⁇ uumn ⁇ - ⁇ lazmenn ⁇ y ⁇ b ⁇ a-5 b ⁇ i in ⁇ i "aln ⁇ . ⁇ .
  • the device which implements the patented method, possesses 5 high reliability, due to the fact that it is completely free of heat, it costs 300 ° C.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Physical Vapour Deposition (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

Un procédé de traitement d'articles dans du plasma à décharge de gaz se caractérise en ce qu'entre une anode (3) et une cathode froide solidaire (2) est générée une décharge à arc sous-vide à deux phases, le plasma ayant une phase de métal-gaz et une phase de gaz mutuellement séparées. On obtient la phase de gaz du plasma par ionisation du gaz de traitement avec des ions séparés de la phase de métal-gaz du plasma. L'article traité (5) est ensuite chauffé jusqu'à la température de traitement puis il est conditionné dans cet intervalle de température. A cet effet, le dispositif est doté d'un moyen (13) situé dans la zone de la cathode (2), impénétrable par les ions métal générés par la cathode (2) et destiné à assurer une séparation des électrons et de la phase de métal-gaz du plasma. Dans un mode de réalisation particulier, le moyen (13) se compose d'un ensemble de plaques en forme de V (14).
EP92911913A 1991-04-29 1992-04-23 Procede et dispositif de traitement d'articles dans du plasma a decharge de gaz Expired - Lifetime EP0583473B1 (fr)

Applications Claiming Priority (28)

Application Number Priority Date Filing Date Title
SU4938768 1991-04-29
RU4938768 1991-04-29
SU4938768 RU2010031C1 (ru) 1991-04-29 1991-04-29 Вакуумная печь
RU5002413 1991-09-11
SU5002528 1991-09-11
SU5002413 1991-09-11
SU915002528A RU1834911C (ru) 1991-09-11 1991-09-11 Способ обработки изделий в установках вакуумно-плазменного нанесени покрытий
RU5002528 1991-09-11
SU5002413 RU2022056C1 (ru) 1991-09-11 1991-09-11 Установка для нанесения покрытий
RU5008180 1991-11-11
RU5008181 1991-11-11
SU5008181 1991-11-11
SU5008180 1991-11-11
SU5008180 RU2002333C1 (ru) 1991-11-11 1991-11-11 Ионный источник
SU5008181 RU2003196C1 (ru) 1991-11-11 1991-11-11 Установка дл генерировани ионного пучка большого сечени
RU5018360 1991-12-24
SU5018360 1991-12-24
SU5018360 RU2071992C1 (ru) 1991-12-24 1991-12-24 Способ обработки изделий источником ионов
SU925024441A RU1834912C (ru) 1992-01-28 1992-01-28 Установка дл нанесени покрытий
SU5024441 1992-01-28
RU5024441 1992-01-28
RU5024440 1992-01-28
SU5024440 1992-01-28
SU5024440 RU2061092C1 (ru) 1992-01-28 1992-01-28 Установка для нанесения покрытий
SU5027759 1992-02-18
RU5027759 1992-02-18
SU5027759 RU2037561C1 (ru) 1992-02-18 1992-02-18 Устройство для упрочняющей поверхностной обработки
PCT/RU1992/000088 WO1992019785A1 (fr) 1991-04-29 1992-04-23 Procede et dispositif de traitement d'articles dans du plasma a decharge de gaz

Publications (3)

Publication Number Publication Date
EP0583473A1 EP0583473A1 (fr) 1994-02-23
EP0583473A4 true EP0583473A4 (en) 1995-11-29
EP0583473B1 EP0583473B1 (fr) 1998-10-14

Family

ID=27577858

Family Applications (1)

Application Number Title Priority Date Filing Date
EP92911913A Expired - Lifetime EP0583473B1 (fr) 1991-04-29 1992-04-23 Procede et dispositif de traitement d'articles dans du plasma a decharge de gaz

Country Status (3)

Country Link
US (1) US5503725A (fr)
EP (1) EP0583473B1 (fr)
DE (1) DE69227313T2 (fr)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5868878A (en) * 1993-08-27 1999-02-09 Hughes Electronics Corporation Heat treatment by plasma electron heating and solid/gas jet cooling
US5738768A (en) * 1995-10-31 1998-04-14 Caterpillar Inc. Process for reducing particle defects in arc vapor deposition coatings
FR2741361B3 (fr) * 1995-11-22 1998-04-17 Balzers Hochvakuum Procede pour traitement thermochimique de surface par immersion dans un plasma, installation pour ce procede, utilisations et pieces obtenues
RU2094896C1 (ru) 1996-03-25 1997-10-27 Научно-производственное предприятие "Новатех" Источник быстрых нейтральных молекул
US7014738B2 (en) 1997-10-24 2006-03-21 Filplas Vacuum Technology Pte Ltd. Enhanced macroparticle filter and cathode arc source
GB9722645D0 (en) * 1997-10-24 1997-12-24 Univ Nanyang Enhanced macroparticle filter and cathode arc source
CA2312777A1 (fr) * 1997-12-05 1999-06-17 Robert A. Ditizio Reacteur a plasma avec blindage de depot
US7300559B2 (en) * 2000-04-10 2007-11-27 G & H Technologies Llc Filtered cathodic arc deposition method and apparatus
CA2305938C (fr) 2000-04-10 2007-07-03 Vladimir I. Gorokhovsky Methode et appareillage de depot d'arc cathodique filtre
US6440219B1 (en) * 2000-06-07 2002-08-27 Simplus Systems Corporation Replaceable shielding apparatus
US6391164B1 (en) * 2000-06-23 2002-05-21 Isak I. Beilis Deposition of coatings and thin films using a vacuum arc with a non-consumable hot anode
UA53365C2 (en) * 2002-05-07 2006-02-15 Nat Scient Ct Kharkiv Physical A mechanism for the vacuum-plasma treatment of articles
US8241468B2 (en) * 2004-12-13 2012-08-14 United Technologies Corporation Method and apparatus for cathodic arc deposition of materials on a substrate
IL170401A (en) * 2005-08-21 2012-03-29 Dialit Ltd Plasma emitter and method utilizing the same
DE502005005634D1 (de) * 2005-09-15 2008-11-20 Applied Materials Gmbh & Co Kg Beschichtungsanlage und Verfahren zum Betrieb einer Beschichtungsanlage
HUE035964T2 (hu) 2006-10-27 2018-06-28 Oerlikon Surface Solutions Ag Pfaeffikon Eljárás és berendezés további kezelésre kerülõ, tisztított szubsztrátok vagy tiszta szubsztrátok gyártására
WO2009071667A1 (fr) 2007-12-07 2009-06-11 Oc Oerlikon Balzers Ag Pulvérisation réactive avec pulvérisation à magnétron par impulsions à haute puissance (hipims)
GB0816240D0 (en) * 2008-09-05 2008-10-15 Nordiko Technical Services Ltd Apparatus
ATE527390T1 (de) * 2009-03-30 2011-10-15 Oerlikon Trading Ag Verfahren zur vorbehandlung von substraten fuer pvd verfahren
CN102031493B (zh) * 2009-09-30 2013-08-21 鸿富锦精密工业（深圳）有限公司 镀膜装置
TW201134972A (en) * 2010-04-14 2011-10-16 Hon Hai Prec Ind Co Ltd Coating device
US9761424B1 (en) 2011-09-07 2017-09-12 Nano-Product Engineering, LLC Filtered cathodic arc method, apparatus and applications thereof
US10304665B2 (en) 2011-09-07 2019-05-28 Nano-Product Engineering, LLC Reactors for plasma-assisted processes and associated methods
US10056237B2 (en) 2012-09-14 2018-08-21 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US9793098B2 (en) 2012-09-14 2017-10-17 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US9412569B2 (en) 2012-09-14 2016-08-09 Vapor Technologies, Inc. Remote arc discharge plasma assisted processes
EP2829635B1 (fr) 2013-07-23 2017-12-27 Semih Oncel Procédé de production contrôlée de revêtements à base de diffusion au moyen de systèmes à arc cathodique sous vide
US11834204B1 (en) 2018-04-05 2023-12-05 Nano-Product Engineering, LLC Sources for plasma assisted electric propulsion
CN111270209B (zh) * 2018-12-05 2023-12-12 东君新能源有限公司 一种蒸汽溅射装置及控制系统、控制方法
RU2716133C1 (ru) * 2018-12-24 2020-03-06 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технологический университет "СТАНКИН" (ФГБОУ ВО "МГТУ "СТАНКИН") Источник быстрых нейтральных молекул
DE102019122972A1 (de) * 2019-08-27 2021-03-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Beschichten oder Modifizieren der Oberfläche eines Substrates innerhalb einer Vakuumkammer
CN115326127B (zh) * 2021-05-11 2025-05-27 中国科学院国家空间科学中心 一种航天器运行轨道空间大气风场测量装置及测量方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0334204A2 (fr) * 1988-03-23 1989-09-27 Balzers Aktiengesellschaft Procédé et dispositif de revêtement d'objets
DE3829260A1 (de) * 1988-08-29 1990-03-01 Multi Arc Gmbh Plasmabeschichtungskammer mit entfernbarem schutzschirm
WO1992016959A1 (fr) * 1991-03-25 1992-10-01 Commonwealth Scientific And Industrial Research Organisation Filtre pour macroparticules de source a arc
WO1992021787A1 (fr) * 1991-05-31 1992-12-10 Kharkovsky Fiziko-Tekhnichesky Institut Procede et dispositif de traitement thermochimique d'articles

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH671407A5 (fr) * 1986-06-13 1989-08-31 Balzers Hochvakuum
CH671238A5 (fr) * 1986-11-06 1989-08-15 Vni Instrument Inst
US4992153A (en) * 1989-04-26 1991-02-12 Balzers Aktiengesellschaft Sputter-CVD process for at least partially coating a workpiece
CH680369A5 (fr) * 1989-11-22 1992-08-14 Balzers Hochvakuum
US5250779A (en) * 1990-11-05 1993-10-05 Balzers Aktiengesellschaft Method and apparatus for heating-up a substrate by means of a low voltage arc discharge and variable magnetic field
DE4125365C1 (fr) * 1991-07-31 1992-05-21 Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0334204A2 (fr) * 1988-03-23 1989-09-27 Balzers Aktiengesellschaft Procédé et dispositif de revêtement d'objets
DE3829260A1 (de) * 1988-08-29 1990-03-01 Multi Arc Gmbh Plasmabeschichtungskammer mit entfernbarem schutzschirm
WO1992016959A1 (fr) * 1991-03-25 1992-10-01 Commonwealth Scientific And Industrial Research Organisation Filtre pour macroparticules de source a arc
WO1992021787A1 (fr) * 1991-05-31 1992-12-10 Kharkovsky Fiziko-Tekhnichesky Institut Procede et dispositif de traitement thermochimique d'articles

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO9219785A1 *

Also Published As

Publication number Publication date
US5503725A (en) 1996-04-02
DE69227313T2 (de) 1999-04-08
DE69227313D1 (de) 1998-11-19
EP0583473A1 (fr) 1994-02-23
EP0583473B1 (fr) 1998-10-14

Similar Documents

Publication Publication Date Title
US6570172B2 (en) Magnetron negative ion sputter source
US6214183B1 (en) Combined ion-source and target-sputtering magnetron and a method for sputtering conductive and nonconductive materials
US6150755A (en) Charged particle source with liquid electrode
US5503725A (en) Method and device for treatment of products in gas-discharge plasma
JP2556637B2 (ja) マグネトロン陰極による基板への成膜装置
JP3158158B2 (ja) 低圧放電の発生及び点弧方法並びに真空加工装置及び該装置の陰極チェンバ
EP0899772B1 (fr) Appareil de revêtement à arc cathodique
WO1982002906A1 (fr) Cathode consommable pour evaporateur de metal a arc electrique
US4737688A (en) Wide area source of multiply ionized atomic or molecular species
NL8600417A (nl) Werkwijze voor het reactief opdampen van lagen uit oxiden, nitriden, oxynitriden en carbiden.
USH566H (en) Apparatus and process for deposition of hard carbon films
JP5184541B2 (ja) 被洗浄基板、あるいは、さらに処理される清潔な基板を製造するための、方法および装置
WO1992019785A1 (fr) Procede et dispositif de traitement d'articles dans du plasma a decharge de gaz
US6083356A (en) Method and device for pre-treatment of substrates
JP7383049B2 (ja) Ｐｖｄ処理のためのアノード
RU2450083C2 (ru) Установка для вакуумной ионно-плазменной обработки длинномерных изделий
US6770178B2 (en) Cathodic arc disposable sting shielding
RU2026414C1 (ru) Способ обработки изделий
Borisov et al. Effective processes for arc-plasma treatment in large vacuum chambers of technological facilities
RU76918U1 (ru) Вакуумная ионно-плазменная установка
WO1992021787A1 (fr) Procede et dispositif de traitement thermochimique d'articles
RU2155243C2 (ru) Способ ионно-лучевой обработки изделий из твердых сплавов
JP2008540821A (ja) プラズマ処理プラント用プラズマ増幅器
RU2001972C1 (ru) Установка дл нанесени упрочн ющих покрытий методом электродугового испарени
Alexeyevich et al. Optical radiation in breakdown of the acceleration gap of a forevacuum pressure, wide-aperture, plasma-cathode, pulsed electron source

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): CH DE GB LI NL

A4 Supplementary search report drawn up and despatched
AK Designated contracting states

Kind code of ref document: A4

Designated state(s): CH DE GB LI NL

RA4 Supplementary search report drawn up and despatched (corrected)

Effective date: 19951013

17P Request for examination filed

Effective date: 19931029

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

17Q First examination report despatched

Effective date: 19971007

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): CH DE GB LI NL

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REF Corresponds to:

Ref document number: 69227313

Country of ref document: DE

Date of ref document: 19981119

REG Reference to a national code

Ref country code: CH

Ref legal event code: NV

Representative=s name: BUECHEL & PARTNER AG PATENTBUERO

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
NLS Nl: assignments of ep-patents

Owner name: NOVATECH-INSTRUMENT, LTD.

REG Reference to a national code

Ref country code: CH

Ref legal event code: PUE

Owner name: SCIENTIFIC-INDUSTRIAL ENTERPRISE NOVATECH -DANN AN

Ref country code: CH

Ref legal event code: NV

Representative=s name: NOVAPAT S.A.

REG Reference to a national code

Ref country code: GB

Ref legal event code: 732E

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 20010430

Year of fee payment: 10

REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: CH

Payment date: 20020328

Year of fee payment: 11

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20020419

Year of fee payment: 11

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20020430

Year of fee payment: 11

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20021101

NLV4 Nl: lapsed or anulled due to non-payment of the annual fee

Effective date: 20021101

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20030423

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20030430

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20030430

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20031101

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20030423

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL