EP1126350B1 - Convertisseur tension - courant - Google Patents

Convertisseur tension - courant Download PDF

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Publication number
EP1126350B1
EP1126350B1 EP00103077A EP00103077A EP1126350B1 EP 1126350 B1 EP1126350 B1 EP 1126350B1 EP 00103077 A EP00103077 A EP 00103077A EP 00103077 A EP00103077 A EP 00103077A EP 1126350 B1 EP1126350 B1 EP 1126350B1
Authority
EP
European Patent Office
Prior art keywords
current
voltage
transistor
transistors
current mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP00103077A
Other languages
German (de)
English (en)
Other versions
EP1126350A1 (fr
Inventor
Hans-Heinrich Viehmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to EP00103077A priority Critical patent/EP1126350B1/fr
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to AT00103077T priority patent/ATE328311T1/de
Priority to DE50012856T priority patent/DE50012856D1/de
Priority to CN01805037.9A priority patent/CN1401099A/zh
Priority to PCT/DE2001/000333 priority patent/WO2001061430A1/fr
Priority to JP2001560758A priority patent/JP3805678B2/ja
Priority to TW090103231A priority patent/TW595078B/zh
Publication of EP1126350A1 publication Critical patent/EP1126350A1/fr
Priority to US10/219,601 priority patent/US6586919B2/en
Application granted granted Critical
Publication of EP1126350B1 publication Critical patent/EP1126350B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/561—Voltage to current converters
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only

Definitions

  • the invention relates to a voltage-current converter having a first current mirror, which has two transistors which are designed in such a way that, for the same drive, the current flowing through the first transistor is greater by a predetermined factor than the current flowing through the second transistor, which represents the output current of the voltage-current converter.
  • Voltage-to-current converters are well known in the art and serve to convert an input voltage into a proportional output current. This is required, for example, for the voltage-controlled oscillator (also referred to as VCO for short) in a phase-locked loop (also referred to as PLL for short).
  • VCO voltage-controlled oscillator
  • PLL phase-locked loop
  • EP-0337444-A2 shows a MOS voltage-to-current converter.
  • FIG. 2 The mentioned at the beginning known voltage-current converter is shown in FIG. 2 shown. It has a current mirror 10 with two self-blocking n-channel MOSFETs 12, 14 (abbreviation for the English term "metal oxide semiconductor field effect transistor”).
  • the current mirror 10 is programmed via a series resistor 16, which is connected in series with the drain terminal of the first transistor 12 to the input voltage U E and determines the drain current I 12 of the first transistor 12, the input current I E of the current mirror 10th represents.
  • the gate terminals of the two transistors 12, 14 are connected to each other and to the drain terminal of the first transistor 12, so that both transistors 12, 14 are driven equal.
  • the source terminal of the first transistor 12 is due to mass.
  • the source terminal of the second transistor 14 is grounded, and at its drain terminal, the output current I A of the voltage-current converter is removed.
  • the current mirror 10 is disclosed in the book SEIFART, MANFRED, "Analog Circuits - 5th Edition", 1996, Verlagtechnik GmbH, Berlin, DE (ISBN 3-341-01175-7), Figure 6.21.
  • FIG. 2 is modified in the known voltage-current converter, the circuit shown there, however, characterized in that the input voltage U E is connected instead of the supply voltage U DD to the series resistor 16. Consequently, the input voltage U E corresponding to the resistance value of the series resistor 16 is proportional to the input current I E.
  • the input voltage U E is usually in the range between 2 and 5 volts and the desired output current I A should be in the range of a few nanoamps
  • the series resistor 16 must have a resistance value in the range of a few megohms. Resistors on this scale, however, require a very large area in integrated circuits, which is a major drawback, since the cost of integrated circuits is mainly affected by footprint.
  • the first current mirror is considered alone, different currents would flow through its two transistors under the same drive, more precisely, the current through the first transistor would be ten times the current through the second transistor in accordance with the factor.
  • the first transistor has a conductance which is ten times the conductance of the second transistor, corresponding to the factor.
  • this first current mirror is not alone, but connected in series with the second current mirror to the supply voltage, which is like the input voltage usually in the range between 2 and 5 volts, connected on the one hand, the two first and secondly the two second transistors in series are switched and, so to speak, form the input current path or the output current path of the voltage-current converter.
  • the two identical transistors of the second current mirror now ensure that equally large currents flow through the two dissimilar transistors of the first transistor.
  • a voltage drops across the first transistor which, according to the factor, is only one tenth of the voltage drop across the second transistor.
  • the residual stress that is, the difference between these two voltages, finally drops over the MOSFET connected in series with the first transistor and thus represents its drain-source voltage.
  • This drain-source voltage remains constant to a good approximation and is for example 60 mV.
  • This value is selected in view of the aforementioned range of input voltage between 2 and 5 volts and is sufficient to be smaller than the gate drive of the MOSFET, that is the difference between the gate-source voltage applied to it, yes is formed by the input voltage, and its threshold voltage. Consequently, the MOSFET is operated in a strong inversion so as to be in the resistance range of the output characteristic, which is also called a "linear region" or "active region".
  • the drain current is, to a good approximation, proportional to the drain-source voltage. Because of this proportionality can therefore be assigned to the channel of the MOSFET, a resistance value or conductance. This conductance is in turn proportional to the gate drive. An increase in the input voltage and thus the gate drive thus causes a proportional increase in the conductance and thus also the drain current. Consequently, since the drain current programs the first current mirror, the current flowing through the second transistor, which is the output current of the voltage-to-current converter, is also proportionally increased, but remains at only one-tenth of the current through the first, corresponding to the factor Transistor. Thus, the output current is proportional to the input voltage, as expected from a voltage-current converter so well.
  • the first current mirror has a third transistor which is connected to the ground, wherein now the current flowing through it and not the current flowing through the second transistor current represents the output current of the voltage-current converter.
  • This third transistor thus serves as Auskoppeltransistor, so that the input voltage is not loaded with the output current. As a result, a high input resistance of the voltage-current converter is achieved.
  • the output current can be scaled to the desired magnitude independently of the second transistor.
  • the current flowing through the first transistor equals the current flowing through the second transistor. This facilitates the design of the circuit and the layout.
  • the first transistor and the second transistor are operated in weak inversion.
  • the drain-source voltage remains constant over a larger range of several decades, so that the accuracy of the voltage-current converter is improved.
  • FIG. 1 shows a voltage-to-current converter in a preferred embodiment having a first current mirror 18, a second current mirror 20, and a MOSFET 22.
  • this MOSFET 22 has a normally-off n-channel. Its source terminal is grounded, and the input voltage U E of the voltage-to-current converter is applied to its gate terminal and therefore forms the gate-source voltage U GS .
  • the illustrated first current mirror 18 has three transistors 24, 26, 28, which in the illustrated embodiment are also self-blocking n-channel MOSFETs which are operated in the saturation region. Their gate terminals are connected to each other and to the drain terminal of the first transistor 24, so that all three transistors 24, 26, 28 are driven equal.
  • the source of the first transistor 24 is connected to the drain of the MOSFET 22, so that the first transistor 24 and the MOSFET 22 are connected in series.
  • the source terminal of the second transistor 26 is grounded.
  • the source terminal of the third transistor 28 is connected to the ground, and at its drain terminal, the output current I A of the voltage-current converter is removed.
  • the first current mirror 18 is thus programmed by the channel resistance of the MOSFET 22.
  • the illustrated second current mirror 20 comprises two transistors 30, 32, which in the illustrated embodiment are self-blocking p-channel MOSFETs operated in the saturation region. Their gate terminals are connected to each other and to the drain terminal of the second transistor 32, so that both transistors 30, 32 are driven the same. Their source connections are connected to the supply voltage U DD .
  • the drain terminal of the first transistor 30 is connected to the drain terminal of the first transistor 24 of the first current mirror 18, while the drain terminal of the second transistor 32 is connected to the drain terminal of the second transistor 26 of the first current mirror 10, so that the two first transistors 24, 30 and the two second transistors 26, 32 are each connected in series to the supply voltage U DD .
  • the three transistors 24, 26, 28 are formed such that at the same drive the drain current I 24 flowing through the first transistor 24 by a predetermined first factor K 1 greater than that by the second Transistor 26 flowing drain current I 26 and by a predetermined second factor K 2 is greater than the current flowing through the third transistor 28 drain current I 28 .
  • the first transistor 24 has a channel conductance G 24 which is K 1 times the channel conductance G 26 of the second transistor 26 and K 2 times the conductance value G 28 of the third transistor 28.
  • the two transistors 30, 32 are formed identically in the above sense, so that at the same drive the current flowing through the first transistor 30 drain current I 30 equal to the current flowing through the second transistor 32 drain Current I is 32 . Consequently, their channel conductances are also G 30 , G 32 same. This can be achieved simply by suitable selection of the geometric dimensions of the two transistors 30, 32 with otherwise identical parameters, so that their geometry quotients ⁇ 30 , ⁇ 32 are the same.
  • the course of the supply voltage U DD via the first transistor 30 of the second current mirror 20, the first transistor 24 of the first current mirror 18 and the MOSFET 22 to ground as "input current path" of the voltage-current converter is referred to, while the course of the Supply voltage U DD via the second transistor 32 of the second current mirror 20 and the second transistor 26 of the first current mirror 18 to the ground is referred to as "output current path" of the voltage-current converter.
  • the second current mirror 20 ensures that the current I E in the input current path and the current I 1 in the output current path are the same.
  • the first factor K 1 is now selected with the aid of the geometry quotients ⁇ 24 , ⁇ 26 such that the MOSFET 22 is operated in the resistance range. So the following must apply: U D S ⁇ U G S - U T ⁇ U eff where U GS is the gate-source voltage formed by the input voltage U E , U T is the threshold voltage, and U eff is the gate drive.
  • This drain current I 28 through the third transistor 28 represents the output current I A of the voltage-current converter, so that the second geometry quotient K 2 can be chosen such that that the output current I A is in the desired order of magnitude.
  • the transistors 30, 32 of the second current mirror 20 need not be identical, but rather they may differ, for example, similar to the transistors 24, 26, 28 of the first current mirror 18 by a factor.
  • transistors 24, 26, 28, 30, 32 of the two current mirrors 18, 20 is not limited to the described MOSFETs, but they may be, for example, MOSFETs with different polarity and / or doping, but also JFETs or bipolar transistors.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
  • Dc-Dc Converters (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Claims (4)

  1. Convertisseur tension-courant, qui convertit une tension d'entrée (UE) en un courant de sortie proportionnel (IA), ayant :
    - un premier miroir de courant (18) qui comporte deux transistors (24, 26) qui sont conçus de telle sorte que, pour une commande identique, le courant passant dans le premier transistor (24) est supérieur d'un premier facteur (K1) au courant (I1) passant dans le deuxième transistor (26) et représentant le courant de sortie du convertisseur tension-courant,
    tel que :
    - il est prévu un deuxième miroir de courant (20) qui comporte deux transistors (30, 32) ;
    - les deux miroirs de courant (18, 20) sont raccordés de telle sorte en série à une tension d'alimentation (UDD) que les deux premiers transistors (24, 26) et les deux deuxièmes transistors (30, 32) sont branchés à chaque fois en série ; et caractérisé par le fait que
    - il est prévu un MOSFET (22) qui est branché en série avec le premier transistor (24) du premier miroir de courant (18) et qui est raccordé par sa borne de grille à la tension d'entrée (UE).
  2. Convertisseur tension-courant selon la revendication 1, caractérisé par le fait que, dans le deuxième miroir de courant (20), le courant passant dans le premier transistor (30) est égal au courant passant dans le deuxième transistor (32).
  3. Convertisseur tension-courant selon l'une des revendications précédentes, caractérisé par le fait que, dans le premier miroir de courant (18), le premier transistor (24) et le deuxième transistor (26) fonctionnent en inversion faible.
  4. Convertisseur tension-courant selon l'une des revendications précédentes, caractérisé par le fait que le MOSFET (22) comporte une tension de seuil de telle sorte que la courbe caractéristique tension-courant commence à 0.
EP00103077A 2000-02-15 2000-02-15 Convertisseur tension - courant Expired - Lifetime EP1126350B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
AT00103077T ATE328311T1 (de) 2000-02-15 2000-02-15 Spannungs-strom-wandler
DE50012856T DE50012856D1 (de) 2000-02-15 2000-02-15 Spannungs-Strom-Wandler
EP00103077A EP1126350B1 (fr) 2000-02-15 2000-02-15 Convertisseur tension - courant
PCT/DE2001/000333 WO2001061430A1 (fr) 2000-02-15 2001-01-26 Convertisseur de tension-courant
CN01805037.9A CN1401099A (zh) 2000-02-15 2001-01-26 电压－电流转换器
JP2001560758A JP3805678B2 (ja) 2000-02-15 2001-01-26 電圧−電流変換器
TW090103231A TW595078B (en) 2000-02-15 2001-02-14 Spannungs-strom-wandler
US10/219,601 US6586919B2 (en) 2000-02-15 2002-08-15 Voltage-current converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP00103077A EP1126350B1 (fr) 2000-02-15 2000-02-15 Convertisseur tension - courant

Publications (2)

Publication Number Publication Date
EP1126350A1 EP1126350A1 (fr) 2001-08-22
EP1126350B1 true EP1126350B1 (fr) 2006-05-31

Family

ID=8167858

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00103077A Expired - Lifetime EP1126350B1 (fr) 2000-02-15 2000-02-15 Convertisseur tension - courant

Country Status (8)

Country Link
US (1) US6586919B2 (fr)
EP (1) EP1126350B1 (fr)
JP (1) JP3805678B2 (fr)
CN (1) CN1401099A (fr)
AT (1) ATE328311T1 (fr)
DE (1) DE50012856D1 (fr)
TW (1) TW595078B (fr)
WO (1) WO2001061430A1 (fr)

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KR100344222B1 (ko) * 2000-09-30 2002-07-20 삼성전자 주식회사 능동저항소자를 사용한 기준전압 발생회로
JP3813516B2 (ja) * 2002-02-27 2006-08-23 株式会社東芝 光検出回路
JP4263068B2 (ja) * 2003-08-29 2009-05-13 株式会社リコー 定電圧回路
CN100432885C (zh) * 2003-08-29 2008-11-12 株式会社理光 恒压电路
JP2005348131A (ja) * 2004-06-03 2005-12-15 Alps Electric Co Ltd 電圧制御電流源
US7554367B2 (en) * 2006-11-22 2009-06-30 System General Corp. Driving circuit
TWI335709B (en) 2007-04-30 2011-01-01 Novatek Microelectronics Corp Voltage conversion device capable of enhancing conversion efficiency
CN101304212B (zh) * 2007-05-11 2011-03-30 联咏科技股份有限公司 可提升电压转换效率的电压转换装置
RU2419192C1 (ru) * 2009-12-10 2011-05-20 Государственное образовательное учреждение высшего профессионального образования "Южно-Российский государственный университет экономики и сервиса" (ГОУ ВПО "ЮРГУЭС") Дифференциальный усилитель с повышенным коэффициентом усиления
CN101795077B (zh) * 2010-04-12 2013-01-23 Bcd半导体制造有限公司 一种控制变换器输出电流电压特性曲线的装置
GB201105400D0 (en) * 2011-03-30 2011-05-11 Power Electronic Measurements Ltd Apparatus for current measurement
JP2013097551A (ja) * 2011-10-31 2013-05-20 Seiko Instruments Inc 定電流回路及び基準電圧回路
US20130257484A1 (en) * 2012-03-30 2013-10-03 Mediatek Singapore Pte. Ltd. Voltage-to-current converter
CN103376818B (zh) * 2012-04-28 2015-03-25 上海海尔集成电路有限公司 用于转换电压信号的装置
US9817426B2 (en) 2014-11-05 2017-11-14 Nxp B.V. Low quiescent current voltage regulator with high load-current capability
CN108241401B (zh) * 2016-12-23 2020-05-01 原相科技股份有限公司 电压转电流电路及电压控制振荡器装置
US10845832B2 (en) * 2018-09-10 2020-11-24 Analog Devices International Unlimited Company Voltage-to-current converter
US11323085B2 (en) * 2019-09-04 2022-05-03 Analog Devices International Unlimited Company Voltage-to-current converter with complementary current mirrors

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Also Published As

Publication number Publication date
DE50012856D1 (de) 2006-07-06
TW595078B (en) 2004-06-21
JP2003523695A (ja) 2003-08-05
CN1401099A (zh) 2003-03-05
WO2001061430A1 (fr) 2001-08-23
US6586919B2 (en) 2003-07-01
JP3805678B2 (ja) 2006-08-02
US20030020446A1 (en) 2003-01-30
EP1126350A1 (fr) 2001-08-22
ATE328311T1 (de) 2006-06-15

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