EP1573395A4 - Streuungsmessausrichtung für die drucklithographie - Google Patents

Streuungsmessausrichtung für die drucklithographie

Info

Publication number
EP1573395A4
EP1573395A4 EP03767009A EP03767009A EP1573395A4 EP 1573395 A4 EP1573395 A4 EP 1573395A4 EP 03767009 A EP03767009 A EP 03767009A EP 03767009 A EP03767009 A EP 03767009A EP 1573395 A4 EP1573395 A4 EP 1573395A4
Authority
EP
European Patent Office
Prior art keywords
scatterometry
alignment
imprint lithography
imprint
lithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03767009A
Other languages
English (en)
French (fr)
Other versions
EP1573395A2 (de
Inventor
Michael P C Watts
Ian Mcmackin
Sidlgata V Sreenivasan
Byung-Jin Choi
Ronald D Voisin
Norman E Schumaker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Nanotechnologies Inc
Original Assignee
Molecular Imprints Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/210,780 external-priority patent/US6916584B2/en
Priority claimed from US10/210,785 external-priority patent/US7027156B2/en
Priority claimed from US10/210,894 external-priority patent/US7070405B2/en
Application filed by Molecular Imprints Inc filed Critical Molecular Imprints Inc
Publication of EP1573395A2 publication Critical patent/EP1573395A2/de
Publication of EP1573395A4 publication Critical patent/EP1573395A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
EP03767009A 2002-08-01 2003-07-31 Streuungsmessausrichtung für die drucklithographie Withdrawn EP1573395A4 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US210894 1988-06-24
US210785 2002-08-01
US10/210,780 US6916584B2 (en) 2002-08-01 2002-08-01 Alignment methods for imprint lithography
US210780 2002-08-01
US10/210,785 US7027156B2 (en) 2002-08-01 2002-08-01 Scatterometry alignment for imprint lithography
US10/210,894 US7070405B2 (en) 2002-08-01 2002-08-01 Alignment systems for imprint lithography
PCT/US2003/023948 WO2004013693A2 (en) 2002-08-01 2003-07-31 Scatterometry alignment for imprint lithography

Publications (2)

Publication Number Publication Date
EP1573395A2 EP1573395A2 (de) 2005-09-14
EP1573395A4 true EP1573395A4 (de) 2010-09-29

Family

ID=31499238

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03767009A Withdrawn EP1573395A4 (de) 2002-08-01 2003-07-31 Streuungsmessausrichtung für die drucklithographie

Country Status (6)

Country Link
EP (1) EP1573395A4 (de)
JP (2) JP2006516065A (de)
KR (1) KR20050026088A (de)
AU (1) AU2003261317A1 (de)
TW (1) TWI266970B (de)
WO (1) WO2004013693A2 (de)

Families Citing this family (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
CN1696826A (zh) 2000-08-01 2005-11-16 得克萨斯州大学系统董事会 用对激活光透明的模板在衬底上形成图案的方法及半导体器件
US6964793B2 (en) 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
US7037639B2 (en) 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US7179079B2 (en) 2002-07-08 2007-02-20 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
US6926929B2 (en) 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
US7442336B2 (en) * 2003-08-21 2008-10-28 Molecular Imprints, Inc. Capillary imprinting technique
US6908861B2 (en) 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7070405B2 (en) 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
DE10311855B4 (de) * 2003-03-17 2005-04-28 Infineon Technologies Ag Anordnung zum Übertragen von Informationen/Strukturen auf Wafer unter Verwendung eines Stempels
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7261830B2 (en) 2003-10-16 2007-08-28 Molecular Imprints, Inc. Applying imprinting material to substrates employing electromagnetic fields
KR100585951B1 (ko) * 2004-02-18 2006-06-01 한국기계연구원 조합/분리형 독립구동이 가능한 복수 개의 모듈을 갖는 임프린팅 장치
JP2006013400A (ja) * 2004-06-29 2006-01-12 Canon Inc ２つの対象物間の相対的位置ずれ検出方法及び装置
US20060062922A1 (en) * 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US7630067B2 (en) * 2004-11-30 2009-12-08 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
US7292326B2 (en) 2004-11-30 2007-11-06 Molecular Imprints, Inc. Interferometric analysis for the manufacture of nano-scale devices
JP5198071B2 (ja) * 2004-12-01 2013-05-15 モレキュラー・インプリンツ・インコーポレーテッド インプリントリソグラフィ・プロセスにおける熱管理のための露光方法
JP4500183B2 (ja) 2005-02-25 2010-07-14 東芝機械株式会社 転写装置
KR100729427B1 (ko) 2005-03-07 2007-06-15 주식회사 디엠에스 미세패턴 형성장치
JP4641835B2 (ja) * 2005-03-16 2011-03-02 リコー光学株式会社 位相シフター光学素子の製造方法及び得られる素子
JP2008535223A (ja) * 2005-03-23 2008-08-28 アギア システムズ インコーポレーテッド インプリント・リソグラフィおよび直接描画技術を用いるデバイス製造方法
US7692771B2 (en) 2005-05-27 2010-04-06 Asml Netherlands B.V. Imprint lithography
US20060267231A1 (en) 2005-05-27 2006-11-30 Asml Netherlands B.V. Imprint lithography
US7708924B2 (en) 2005-07-21 2010-05-04 Asml Netherlands B.V. Imprint lithography
KR20060127811A (ko) * 2005-06-07 2006-12-13 오브듀캇 아베 분리 장치 및 방법
TWI432904B (zh) * 2006-01-25 2014-04-01 Dow Corning 用於微影技術之環氧樹脂調配物
JP2007258669A (ja) * 2006-02-23 2007-10-04 Matsushita Electric Works Ltd インプリントリソグラフィー方法及びインプリントリソグラフィー装置
ATE513625T1 (de) * 2006-04-03 2011-07-15 Molecular Imprints Inc Lithographiedrucksystem
US8850980B2 (en) * 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
JP4958614B2 (ja) * 2006-04-18 2012-06-20 キヤノン株式会社 パターン転写装置、インプリント装置、パターン転写方法および位置合わせ装置
JP4795300B2 (ja) * 2006-04-18 2011-10-19 キヤノン株式会社 位置合わせ方法、インプリント方法、位置合わせ装置、インプリント装置、及び位置計測方法
JP4848832B2 (ja) * 2006-05-09 2011-12-28 凸版印刷株式会社 ナノインプリント装置及びナノインプリント方法
US7832416B2 (en) 2006-10-10 2010-11-16 Hewlett-Packard Development Company, L.P. Imprint lithography apparatus and methods
EP2079574B1 (de) * 2006-10-31 2017-03-08 Modilis Holdings LLC Verfahren und anordnung zur herstellung optischer produkte mit komplexen dreidimensionalen formen
US9573319B2 (en) * 2007-02-06 2017-02-21 Canon Kabushiki Kaisha Imprinting method and process for producing a member in which a mold contacts a pattern forming layer
US8142702B2 (en) * 2007-06-18 2012-03-27 Molecular Imprints, Inc. Solvent-assisted layer formation for imprint lithography
US7837907B2 (en) * 2007-07-20 2010-11-23 Molecular Imprints, Inc. Alignment system and method for a substrate in a nano-imprint process
TWI400479B (zh) * 2007-07-20 2013-07-01 Molecular Imprints Inc 供奈米壓印方法中之基材所用之配向系統及方法
JP5326468B2 (ja) * 2008-02-15 2013-10-30 凸版印刷株式会社 インプリント法
JP2009212471A (ja) * 2008-03-06 2009-09-17 Sanyo Electric Co Ltd 半導体装置の製造方法
JP5185366B2 (ja) * 2008-03-14 2013-04-17 公立大学法人大阪府立大学 光インプリント方法、モールド複製方法及びモールドの複製品
TWI414897B (zh) * 2008-05-02 2013-11-11 Hon Hai Prec Ind Co Ltd 對準裝置
WO2010005032A1 (ja) * 2008-07-09 2010-01-14 東洋合成工業株式会社 パターン形成方法
NL2003347A (en) 2008-09-11 2010-03-16 Asml Netherlands Bv Imprint lithography.
JP4892025B2 (ja) * 2008-09-26 2012-03-07 株式会社東芝 インプリント方法
EP2199855B1 (de) * 2008-12-19 2016-07-20 Obducat Verfahren und Prozesse zur Modifizierung von Polymermaterialoberflächeninteraktionen
NL2003871A (en) 2009-02-04 2010-08-05 Asml Netherlands Bv Imprint lithography.
JP4881403B2 (ja) * 2009-03-26 2012-02-22 株式会社東芝 パターン形成方法
JP5446434B2 (ja) * 2009-04-30 2014-03-19 Ｊｓｒ株式会社 ナノインプリントリソグラフィー用硬化性組成物及びナノインプリント方法
KR101708256B1 (ko) * 2009-07-29 2017-02-20 닛산 가가쿠 고교 가부시키 가이샤 나노 임프린트용 레지스트 하층막 형성 조성물
JP5284212B2 (ja) 2009-07-29 2013-09-11 株式会社東芝 半導体装置の製造方法
KR101105410B1 (ko) * 2009-08-20 2012-01-17 주식회사 디엠에스 임프린트 장치
NL2005259A (en) 2009-09-29 2011-03-30 Asml Netherlands Bv Imprint lithography.
JP5671302B2 (ja) 2009-11-10 2015-02-18 富士フイルム株式会社 インプリント用硬化性組成物、パターン形成方法およびパターン
JP2011103362A (ja) * 2009-11-10 2011-05-26 Toshiba Corp パターン形成方法
JP5774598B2 (ja) * 2009-11-24 2015-09-09 エーエスエムエル ネザーランズ ビー．ブイ． アライメント及びインプリントリソグラフィ
NL2005434A (en) 2009-12-18 2011-06-21 Asml Netherlands Bv Imprint lithography.
JP5351069B2 (ja) 2010-02-08 2013-11-27 株式会社東芝 インプリント方法及びインプリント装置
JP5581871B2 (ja) * 2010-07-22 2014-09-03 大日本印刷株式会社 インプリント方法およびインプリント装置
US20140094565A1 (en) * 2011-05-25 2014-04-03 Mitsubishi Rayon Co., Ltd. Method for producing siloxane oligomers
JP2013021194A (ja) * 2011-07-12 2013-01-31 Canon Inc インプリント装置及び物品の製造方法
KR101414830B1 (ko) 2011-11-30 2014-07-03 다이닛뽕스크린 세이조오 가부시키가이샤 얼라이먼트 방법, 전사 방법 및 전사장치
JP5967924B2 (ja) 2011-12-21 2016-08-10 キヤノン株式会社 位置検出装置、インプリント装置およびデバイス製造方法
JP5938218B2 (ja) * 2012-01-16 2016-06-22 キヤノン株式会社 インプリント装置、物品の製造方法およびインプリント方法
JP5824379B2 (ja) * 2012-02-07 2015-11-25 キヤノン株式会社 インプリント装置、インプリント方法、及び物品の製造方法
JP6326916B2 (ja) * 2013-04-23 2018-05-23 大日本印刷株式会社 インプリント用モールドおよびインプリント方法
JP6361238B2 (ja) * 2013-04-23 2018-07-25 大日本印刷株式会社 インプリント用モールドおよびインプリント方法
JP6230353B2 (ja) * 2013-09-25 2017-11-15 キヤノン株式会社 パターン形状を有する膜の製造方法、光学部品の製造方法、回路基板の製造方法、電子機器の製造方法
JP5865332B2 (ja) * 2013-11-01 2016-02-17 キヤノン株式会社 インプリント装置、物品の製造方法、及びインプリント方法
JP6356996B2 (ja) * 2014-04-01 2018-07-11 キヤノン株式会社 パターン形成方法、露光装置、および物品の製造方法
WO2015151323A1 (ja) * 2014-04-01 2015-10-08 大日本印刷株式会社 インプリント用モールドおよびインプリント方法
JP6499898B2 (ja) 2014-05-14 2019-04-10 株式会社ニューフレアテクノロジー 検査方法、テンプレート基板およびフォーカスオフセット方法
JP5944436B2 (ja) * 2014-05-29 2016-07-05 大日本印刷株式会社 パターンの形成方法およびテンプレートの製造方法
JP5754535B2 (ja) * 2014-07-08 2015-07-29 大日本印刷株式会社 インプリント方法およびインプリント装置
JP2015144278A (ja) * 2015-01-26 2015-08-06 東洋合成工業株式会社 組成物及び複合体の製造方法
US9797846B2 (en) 2015-04-17 2017-10-24 Nuflare Technology, Inc. Inspection method and template
JP6748461B2 (ja) * 2016-03-22 2020-09-02 キヤノン株式会社 インプリント装置、インプリント装置の動作方法および物品製造方法
JP6685821B2 (ja) 2016-04-25 2020-04-22 キヤノン株式会社 計測装置、インプリント装置、物品の製造方法、光量決定方法、及び、光量調整方法
JP2018101671A (ja) 2016-12-19 2018-06-28 キヤノン株式会社 インプリント装置及び物品の製造方法
KR102213854B1 (ko) * 2019-07-24 2021-02-10 한국기계연구원 임프린팅용 헤드 및 이를 포함하는 임프린팅 장치
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US20210129166A1 (en) * 2019-11-04 2021-05-06 Tokyo Electron Limited Systems and Methods for Spin Process Video Analysis During Substrate Processing
KR102302901B1 (ko) * 2020-01-30 2021-09-17 주식회사 제이스텍 디스플레이 사이드 레이저 패턴설비의 스테이지 백업구조
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02152220A (ja) * 1988-12-02 1990-06-12 Canon Inc 位置合せ方法
US6153886A (en) * 1993-02-19 2000-11-28 Nikon Corporation Alignment apparatus in projection exposure apparatus
US20020062204A1 (en) * 1999-03-24 2002-05-23 Nikon Corporation Position measuring device, position measurement method, exposure apparatus, exposure method, and superposition measuring device and superposition measurement method
US20020093122A1 (en) * 2000-08-01 2002-07-18 Choi Byung J. Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
US20020098426A1 (en) * 2000-07-16 2002-07-25 Sreenivasan S. V. High-resolution overlay alignment methods and systems for imprint lithography

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2472209A1 (fr) * 1979-12-18 1981-06-26 Thomson Csf Systeme optique d'alignement automatique de deux motifs comportant des reperes s'alignement du type reseaux, notamment en photo-repetition directe sur silicium
JP2704001B2 (ja) * 1989-07-18 1998-01-26 キヤノン株式会社 位置検出装置
DE4031637C2 (de) * 1989-10-06 1997-04-10 Toshiba Kawasaki Kk Anordnung zum Messen einer Verschiebung zwischen zwei Objekten
JP3008633B2 (ja) * 1991-01-11 2000-02-14 キヤノン株式会社 位置検出装置
JPH0811225A (ja) * 1994-07-04 1996-01-16 Canon Inc 光情報記録媒体用スタンパー
JPH08288197A (ja) * 1995-04-14 1996-11-01 Nikon Corp 位置検出方法、及び位置検出装置
JPH10209008A (ja) * 1997-01-21 1998-08-07 Nikon Corp 荷電ビーム露光方法およびマスク
JP4846888B2 (ja) * 1998-12-01 2011-12-28 キヤノン株式会社 位置合わせ方法
JP2000194142A (ja) * 1998-12-25 2000-07-14 Fujitsu Ltd パタ―ン形成方法及び半導体装置の製造方法
JP2000323461A (ja) * 1999-05-11 2000-11-24 Nec Corp 微細パターン形成装置、その製造方法、および形成方法
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
JP3892656B2 (ja) * 2000-09-13 2007-03-14 株式会社ルネサステクノロジ 合わせ誤差測定装置及びそれを用いた半導体デバイスの製造方法
KR101031528B1 (ko) * 2000-10-12 2011-04-27 더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템 실온 저압 마이크로- 및 나노- 임프린트 리소그래피용템플릿
US6383888B1 (en) * 2001-04-18 2002-05-07 Advanced Micro Devices, Inc. Method and apparatus for selecting wafer alignment marks based on film thickness variation
JP2003086537A (ja) * 2001-09-13 2003-03-20 Tdk Corp 構造体を用いた薄膜パターン製造方法および構造体
JP4276087B2 (ja) * 2002-03-15 2009-06-10 プリンストン ユニヴァーシティ レーザを利用したダイレクトインプリントリソグラフィ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02152220A (ja) * 1988-12-02 1990-06-12 Canon Inc 位置合せ方法
US6153886A (en) * 1993-02-19 2000-11-28 Nikon Corporation Alignment apparatus in projection exposure apparatus
US20020062204A1 (en) * 1999-03-24 2002-05-23 Nikon Corporation Position measuring device, position measurement method, exposure apparatus, exposure method, and superposition measuring device and superposition measurement method
US20020098426A1 (en) * 2000-07-16 2002-07-25 Sreenivasan S. V. High-resolution overlay alignment methods and systems for imprint lithography
US20020093122A1 (en) * 2000-08-01 2002-07-18 Choi Byung J. Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CHOI B J ET AL: "Layer-to-layer alignment for step and flash imprint lithography", PROCEEDINGS OF THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING (SPIE), SPIE, USA LNKD- DOI:10.1117/12.436662, vol. 4343, 1 January 2001 (2001-01-01), pages 436 - 442, XP002275988, ISSN: 0277-786X *
See also references of WO2004013693A2 *
WHITE D L ET AL: "Novel alignment system for imprint lithography", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AVS / AIP, MELVILLE, NEW YORK, NY, US LNKD- DOI:10.1116/1.1319706, vol. 18, no. 6, 1 November 2000 (2000-11-01), pages 3552 - 3556, XP002204287, ISSN: 1071-1023 *

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JP2006516065A (ja) 2006-06-15
JP5421221B2 (ja) 2014-02-19
AU2003261317A1 (en) 2004-02-23
TWI266970B (en) 2006-11-21
KR20050026088A (ko) 2005-03-14
WO2004013693A2 (en) 2004-02-12
AU2003261317A8 (en) 2004-02-23
TW200406651A (en) 2004-05-01

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