EP1829120A4 - NITRIDE SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD OF MANUFACTURING THE DEVICE - Google Patents

NITRIDE SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD OF MANUFACTURING THE DEVICE

Info

Publication number
EP1829120A4
EP1829120A4 EP05821284A EP05821284A EP1829120A4 EP 1829120 A4 EP1829120 A4 EP 1829120A4 EP 05821284 A EP05821284 A EP 05821284A EP 05821284 A EP05821284 A EP 05821284A EP 1829120 A4 EP1829120 A4 EP 1829120A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
nitride semiconductor
semiconductor electroluminescent
electroluminescent device
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05821284A
Other languages
German (de)
French (fr)
Other versions
EP1829120A1 (en
Inventor
Suk Hun Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to EP10191954A priority Critical patent/EP2306528A3/en
Priority to EP10191955.3A priority patent/EP2306529A3/en
Publication of EP1829120A1 publication Critical patent/EP1829120A1/en
Publication of EP1829120A4 publication Critical patent/EP1829120A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
EP05821284A 2004-12-23 2005-12-05 NITRIDE SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD OF MANUFACTURING THE DEVICE Withdrawn EP1829120A4 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP10191954A EP2306528A3 (en) 2004-12-23 2005-12-05 Nitride semiconductor light emitting device and fabrication method thereof
EP10191955.3A EP2306529A3 (en) 2004-12-23 2005-12-05 Nitride semiconductor light emitting device and fabrication method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040111087A KR100662191B1 (en) 2004-12-23 2004-12-23 Nitride semiconductor light emitting device and manufacturing method
PCT/KR2005/004120 WO2006068376A1 (en) 2004-12-23 2005-12-05 Nitride semiconductor light emitting device and fabrication method thereof

Publications (2)

Publication Number Publication Date
EP1829120A1 EP1829120A1 (en) 2007-09-05
EP1829120A4 true EP1829120A4 (en) 2010-06-02

Family

ID=36601937

Family Applications (3)

Application Number Title Priority Date Filing Date
EP05821284A Withdrawn EP1829120A4 (en) 2004-12-23 2005-12-05 NITRIDE SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD OF MANUFACTURING THE DEVICE
EP10191954A Ceased EP2306528A3 (en) 2004-12-23 2005-12-05 Nitride semiconductor light emitting device and fabrication method thereof
EP10191955.3A Ceased EP2306529A3 (en) 2004-12-23 2005-12-05 Nitride semiconductor light emitting device and fabrication method thereof

Family Applications After (2)

Application Number Title Priority Date Filing Date
EP10191954A Ceased EP2306528A3 (en) 2004-12-23 2005-12-05 Nitride semiconductor light emitting device and fabrication method thereof
EP10191955.3A Ceased EP2306529A3 (en) 2004-12-23 2005-12-05 Nitride semiconductor light emitting device and fabrication method thereof

Country Status (7)

Country Link
US (5) US7791062B2 (en)
EP (3) EP1829120A4 (en)
JP (2) JP2008526014A (en)
KR (1) KR100662191B1 (en)
CN (2) CN101577305B (en)
DE (2) DE202005021990U1 (en)
WO (1) WO2006068376A1 (en)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100580751B1 (en) * 2004-12-23 2006-05-15 엘지이노텍 주식회사 Nitride semiconductor light emitting device and manufacturing method
KR100662191B1 (en) * 2004-12-23 2006-12-27 엘지이노텍 주식회사 Nitride semiconductor light emitting device and manufacturing method
EP1883140B1 (en) 2006-07-27 2013-02-27 OSRAM Opto Semiconductors GmbH LD or LED with superlattice clad layer and graded doping
EP1883119B1 (en) 2006-07-27 2015-11-04 OSRAM Opto Semiconductors GmbH Semiconductor layer structure with overlay grid
EP1883141B1 (en) 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD or LED with superlattice cladding layer
JP4462251B2 (en) * 2006-08-17 2010-05-12 日立電線株式会社 III-V nitride semiconductor substrate and III-V nitride light emitting device
KR101438806B1 (en) 2007-08-28 2014-09-12 엘지이노텍 주식회사 Semiconductor light emitting device and manufacturing method thereof
JP2009177029A (en) * 2008-01-25 2009-08-06 Sumitomo Electric Ind Ltd Method for manufacturing a semiconductor film
JP4640427B2 (en) * 2008-03-14 2011-03-02 ソニー株式会社 GaN-based semiconductor light-emitting device, light-emitting device assembly, light-emitting device, method for manufacturing GaN-based semiconductor light-emitting device, driving method for GaN-based semiconductor light-emitting device, and image display device
DE102008056371A1 (en) * 2008-11-07 2010-05-12 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
KR101047691B1 (en) * 2008-12-12 2011-07-08 엘지이노텍 주식회사 Semiconductor light emitting device and manufacturing method thereof
KR101039982B1 (en) * 2010-03-18 2011-06-09 엘지이노텍 주식회사 Light emitting device and manufacturing method
US10134948B2 (en) 2011-02-25 2018-11-20 Sensor Electronic Technology, Inc. Light emitting diode with polarization control
JP5023230B1 (en) 2011-05-16 2012-09-12 株式会社東芝 Nitride semiconductor element, nitride semiconductor wafer, and method of manufacturing nitride semiconductor layer
JP5885942B2 (en) * 2011-05-30 2016-03-16 シャープ株式会社 Nitride semiconductor light emitting device and manufacturing method thereof
CN102881784B (en) * 2011-07-14 2016-02-03 比亚迪股份有限公司 The p-type GaN/AlGaN structure that C δ adulterates, LED structure and preparation method
CN103178169B (en) * 2011-12-22 2015-08-26 比亚迪股份有限公司 A kind of LED and preparation method thereof
KR101881064B1 (en) * 2012-03-05 2018-07-24 삼성전자주식회사 Nitride Semiconductor light emitting device and manufacturing method of the same
JP6054620B2 (en) 2012-03-29 2016-12-27 トランスフォーム・ジャパン株式会社 Compound semiconductor device and manufacturing method thereof
JP5337272B2 (en) * 2012-04-16 2013-11-06 株式会社東芝 Nitride semiconductor element, nitride semiconductor wafer, and method of manufacturing nitride semiconductor layer
KR101376976B1 (en) * 2012-06-29 2014-03-21 인텔렉추얼디스커버리 주식회사 Semiconductor light generating device
KR102035192B1 (en) * 2013-03-21 2019-10-22 엘지이노텍 주식회사 Light emitting device
DE102013104272A1 (en) 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Optoelectronic component and method for its production
CN103367594B (en) * 2013-07-26 2015-12-02 东南大学 A kind of light-emitting diode and preparation method thereof
CN103489972A (en) * 2013-09-24 2014-01-01 西安神光皓瑞光电科技有限公司 LED structure resistant to electrostatic breakdown
CN103500702A (en) * 2013-10-09 2014-01-08 西安神光皓瑞光电科技有限公司 Low-diffusion and high-hole concentration P type GaN-based material growing method
CN103681986B (en) * 2013-11-27 2016-02-10 江西圆融光电科技有限公司 A kind of gallium nitride based LED epitaxial slice and preparation method thereof
US9224815B2 (en) 2014-01-03 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method of tuning doping concentration in III-V compound semiconductor through co-doping donor and acceptor impurities
KR102198693B1 (en) 2014-01-15 2021-01-06 삼성전자주식회사 Semiconductor light emitting device
CN103956413B (en) * 2014-04-23 2017-04-12 湘能华磊光电股份有限公司 LED epitaxial layer growing method and prepared LED epitaxial layer
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
KR102318317B1 (en) 2014-05-27 2021-10-28 실라나 유브이 테크놀로지스 피티이 리미티드 Advanced electronic device structures using semiconductor structures and superlattices
JP6817072B2 (en) 2014-05-27 2021-01-20 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ Optoelectronic device
CN106415854B (en) * 2014-05-27 2019-10-01 斯兰纳Uv科技有限公司 Electronic device including N-type and p-type superlattices
CN104091872B (en) * 2014-07-30 2016-08-17 湘能华磊光电股份有限公司 LED, growing method and the LED structure of Mg diffusion
KR102264671B1 (en) 2014-09-30 2021-06-15 서울바이오시스 주식회사 Vertical ultraviolet light emitting device
TWI581453B (en) * 2014-12-23 2017-05-01 錼創科技股份有限公司 Semiconductor light-emitting element
JP6380172B2 (en) * 2015-03-06 2018-08-29 豊田合成株式会社 Group III nitride semiconductor light emitting device and method for manufacturing the same
KR102604739B1 (en) 2017-01-05 2023-11-22 삼성전자주식회사 Semiconductor Light Emitting Device
DE102017119931A1 (en) * 2017-08-30 2019-02-28 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
KR102540198B1 (en) 2020-05-22 2023-06-02 충칭 콘카 포토일렉트릭 테크놀로지 리서치 인스티튜트 컴퍼니 리미티드 Superlattice layer, LED epitaxial structure, display device and manufacturing method thereof
CN113451458B (en) * 2020-05-22 2022-04-01 重庆康佳光电技术研究院有限公司 Superlattice layer, LED epitaxial structure, display device and manufacturing method thereof
CN112048710B (en) * 2020-09-07 2023-09-19 湘能华磊光电股份有限公司 LED epitaxial growth method for reducing blue shift of LED luminous wavelength
CN115050825B (en) * 2021-03-09 2025-11-28 广西飓芯科技有限责任公司 Preparation method of ohmic contact between p-type III-V semiconductor material with low specific contact resistivity and conductive electrode
CN116918080A (en) * 2021-07-15 2023-10-20 安徽三安光电有限公司 Semiconductor light-emitting elements and light-emitting devices
CN114388664B (en) * 2021-12-29 2023-08-29 南昌大学 A growth method for improving photoelectric conversion efficiency of GaN-based light-emitting devices
CN115172542A (en) * 2022-02-22 2022-10-11 江西兆驰半导体有限公司 LED epitaxial wafer, epitaxial growth method and LED chip
CN115394891B (en) * 2022-09-23 2026-04-10 厦门士兰明镓化合物半导体有限公司 Semiconductor light-emitting elements and their fabrication methods
CN116130564B (en) * 2023-03-09 2023-12-19 安徽格恩半导体有限公司 Semiconductor light-emitting diode
CN118431366B (en) * 2024-07-04 2024-09-20 江西兆驰半导体有限公司 LED epitaxial wafer, preparation method thereof and LED

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020021247A (en) * 2000-09-14 2002-03-20 양계모 III-Nitride compound semiconductor light emitting device having a tunnel junction structure
WO2002023640A1 (en) * 2000-09-14 2002-03-21 Optowell Co., Ltd. Nitride compound semiconductor light emitting device having a tunnel junction structure and fabrication method thereof
WO2002045223A1 (en) * 2000-11-29 2002-06-06 Optowell Co., Ltd. Nitride compound semiconductor vertical-cavity surface-emitting laser

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3605907B2 (en) * 1994-10-28 2004-12-22 三菱化学株式会社 Semiconductor device having contact resistance reduction layer
KR100527349B1 (en) * 1997-01-09 2005-11-09 니치아 카가쿠 고교 가부시키가이샤 Nitride Semiconductor Device
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JPH10294531A (en) * 1997-02-21 1998-11-04 Toshiba Corp Nitride compound semiconductor light emitting device
CA2298491C (en) * 1997-07-25 2009-10-06 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP4225594B2 (en) * 1997-08-04 2009-02-18 三洋電機株式会社 Gallium nitride compound semiconductor device
KR100589621B1 (en) * 1998-03-12 2006-06-19 니치아 카가쿠 고교 가부시키가이샤 Nitride semiconductor devices
US6657300B2 (en) * 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
EP0963985B1 (en) 1998-06-12 2003-03-12 F. Hoffmann-La Roche Ag Di-or triaza-spiro(4,5)decane derivatives
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
JP4149054B2 (en) * 1998-11-27 2008-09-10 シャープ株式会社 Semiconductor device
KR100288851B1 (en) 1999-03-25 2001-04-16 조장연 Method for making a III-Nitride semiconductor light-emitting device using delta-doping technique
CN1347581A (en) * 1999-03-26 2002-05-01 松下电器产业株式会社 Semiconductor structures having strain compensated layer and method of fabrication
KR100330228B1 (en) * 1999-04-07 2002-03-25 조장연 GaN-based Semiconductor Light Emitting Devices of Quantum Well Electronic Structures Resonating with Two-dimensional Electron Gas
JP3609661B2 (en) * 1999-08-19 2005-01-12 株式会社東芝 Semiconductor light emitting device
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP3453558B2 (en) * 2000-12-25 2003-10-06 松下電器産業株式会社 Nitride semiconductor device
TW488088B (en) * 2001-01-19 2002-05-21 South Epitaxy Corp Light emitting diode structure
US6872986B2 (en) * 2001-07-04 2005-03-29 Nichia Corporation Nitride semiconductor device
TW550839B (en) * 2001-07-25 2003-09-01 Shinetsu Handotai Kk Light emitting element and method for manufacturing thereof
US6833564B2 (en) 2001-11-02 2004-12-21 Lumileds Lighting U.S., Llc Indium gallium nitride separate confinement heterostructure light emitting devices
US7919791B2 (en) * 2002-03-25 2011-04-05 Cree, Inc. Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
CN1208846C (en) * 2002-03-27 2005-06-29 联铨科技股份有限公司 LED in III group nitride and its manufacturing methods
KR100497890B1 (en) * 2002-08-19 2005-06-29 엘지이노텍 주식회사 Nitride semiconductor LED and fabrication method for thereof
KR100497127B1 (en) * 2002-09-05 2005-06-28 삼성전기주식회사 AlGaInN semiconductor LED device
US6921929B2 (en) * 2003-06-27 2005-07-26 Lockheed Martin Corporation Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens
WO2005050748A1 (en) * 2003-11-19 2005-06-02 Nichia Corporation Semiconductor device and method for manufacturing same
JP4999278B2 (en) 2004-02-24 2012-08-15 昭和電工株式会社 Gallium nitride compound semiconductor light emitting device
KR100662191B1 (en) * 2004-12-23 2006-12-27 엘지이노텍 주식회사 Nitride semiconductor light emitting device and manufacturing method
JP3759746B2 (en) 2005-04-08 2006-03-29 シャープ株式会社 Method for producing group III nitride compound semiconductor light emitting diode
JP2005252309A (en) 2005-05-30 2005-09-15 Toshiba Corp Method for manufacturing gallium nitride based semiconductor light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020021247A (en) * 2000-09-14 2002-03-20 양계모 III-Nitride compound semiconductor light emitting device having a tunnel junction structure
WO2002023640A1 (en) * 2000-09-14 2002-03-21 Optowell Co., Ltd. Nitride compound semiconductor light emitting device having a tunnel junction structure and fabrication method thereof
WO2002045223A1 (en) * 2000-11-29 2002-06-06 Optowell Co., Ltd. Nitride compound semiconductor vertical-cavity surface-emitting laser

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KIM K H ET AL: "III-nitride ultraviolet light-emitting diodes with delta doping", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US LNKD- DOI:10.1063/1.1593212, vol. 83, no. 3, 21 July 2003 (2003-07-21), pages 566 - 568, XP012035548, ISSN: 0003-6951 *
See also references of WO2006068376A1 *

Also Published As

Publication number Publication date
EP2306529A3 (en) 2013-04-10
JP2012195616A (en) 2012-10-11
EP1829120A1 (en) 2007-09-05
US8674340B2 (en) 2014-03-18
US20120313109A1 (en) 2012-12-13
EP2306528A2 (en) 2011-04-06
WO2006068376A1 (en) 2006-06-29
KR20060072446A (en) 2006-06-28
DE202005021971U1 (en) 2011-11-11
EP2306529A2 (en) 2011-04-06
DE202005021990U1 (en) 2012-01-31
JP2008526014A (en) 2008-07-17
US20140183449A1 (en) 2014-07-03
EP2306528A3 (en) 2013-04-03
CN101577305B (en) 2012-02-01
US8278646B2 (en) 2012-10-02
KR100662191B1 (en) 2006-12-27
US8969849B2 (en) 2015-03-03
US7791062B2 (en) 2010-09-07
CN101577305A (en) 2009-11-11
CN100555682C (en) 2009-10-28
CN101069289A (en) 2007-11-07
US20150137071A1 (en) 2015-05-21
US9190567B2 (en) 2015-11-17
US20090166606A1 (en) 2009-07-02
US20100289002A1 (en) 2010-11-18

Similar Documents

Publication Publication Date Title
EP1829120A4 (en) NITRIDE SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD OF MANUFACTURING THE DEVICE
EP1829122A4 (en) NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
EP1790017A4 (en) NITRIDE SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1829119A4 (en) NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
EP1803166A4 (en) NITRIDE SEMICONDUCTOR PHOTOEMETER DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1829121A4 (en) NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
EP1796149A4 (en) QUARTZ CLAMPING DEVICE AND SEMICONDUCTOR MANUFACTURING EQUIPMENT
EP1897151A4 (en) LUMINESCENT DEVICE AND METHOD OF MANUFACTURING THE SAME
EP1821378A4 (en) SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME
EP1617483A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
EP1636858A4 (en) NITRIDE SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1829118A4 (en) SEMICONDUCTOR LIGHT EMITTING DEVICE BASED ON NITRIDE AND METHOD OF MANUFACTURING THE SAME
DE602004009821D1 (en) Semiconductor device and manufacturing method thereof
EP1760790A4 (en) SEMICONDUCTOR DEVICE
EP1710831A4 (en) SEMICONDUCTOR DEVICE
TWI371782B (en) Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
EP1755165A4 (en) SEMICONDUCTOR DEVICE
EP1946374A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1617475A4 (en) SEMICONDUCTOR DEVICE
FR2858112B1 (en) SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND INTEGRATED CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICE
TWI366283B (en) Nitride semiconductor light-emitting device and method for fabrication thereof
EP2089907A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
EP1929545A4 (en) SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1887624A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1801871A4 (en) SEMICONDUCTOR DEVICE

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20070521

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE GB

RIN1 Information on inventor provided before grant (corrected)

Inventor name: LEE, SUK HUN

DAX Request for extension of the european patent (deleted)
RBV Designated contracting states (corrected)

Designated state(s): DE GB

A4 Supplementary search report drawn up and despatched

Effective date: 20100503

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: LG INNOTEK CO., LTD.

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20101125