EP1890319A4 - SOLID SURFACE APPLICATION METHOD AND APPARATUS - Google Patents

SOLID SURFACE APPLICATION METHOD AND APPARATUS

Info

Publication number: EP1890319A4
Authority: EP; European Patent Office
Prior art keywords: application method; solid surface; surface application; solid; application
Prior art date: 2005-05-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP06756347A

Other languages

German (de)

French (fr)

Other versions

EP1890319A1 (en

EP1890319B1 (en

Inventor

Akinobu Sato

Akiko Suzuki

Emmanuel Bourelle

Jiro Matsuo

Toshio Seki

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Japan Aviation Electronics Industry Ltd

Original Assignee

Japan Aviation Electronics Industry Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2005-05-20

Filing date

2006-05-18

Publication date

2008-12-31

2006-05-18 Application filed by Japan Aviation Electronics Industry Ltd filed Critical Japan Aviation Electronics Industry Ltd

2008-02-20 Publication of EP1890319A1 publication Critical patent/EP1890319A1/en

2008-12-31 Publication of EP1890319A4 publication Critical patent/EP1890319A4/en

2011-03-23 Application granted granted Critical

2011-03-23 Publication of EP1890319B1 publication Critical patent/EP1890319B1/en

2026-05-18 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/05—Arrangements for energy or mass analysis
- H01J2237/057—Energy or mass filtering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0812—Ionized cluster beam [ICB] sources
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20207—Tilt
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3151—Etching

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Drying Of Semiconductors (AREA)
ing And Chemical Polishing (AREA)

EP06756347A 2005-05-20 2006-05-18 METHOD FOR FLATTENING a SOLID SURFACE Expired - Lifetime EP1890319B1 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2005148282		2005-05-20
PCT/JP2006/309932 WO2006123739A1 (en)	2005-05-20	2006-05-18	Method and apparatus for flattening solid surface

Publications (3)

Publication Number	Publication Date
EP1890319A1 EP1890319A1 (en)	2008-02-20
EP1890319A4 true EP1890319A4 (en)	2008-12-31
EP1890319B1 EP1890319B1 (en)	2011-03-23

Family

ID=37431311

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP06756347A Expired - Lifetime EP1890319B1 (en)	2005-05-20	2006-05-18	METHOD FOR FLATTENING a SOLID SURFACE

Country Status (7)

Country	Link
US (1)	US8178857B2 (en)
EP (1)	EP1890319B1 (en)
JP (1)	JP4765106B2 (en)
KR (1)	KR100933332B1 (en)
CN (1)	CN101176183A (en)
DE (1)	DE602006020866D1 (en)
WO (1)	WO2006123739A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2005031838A1 (en) *	2003-09-30	2005-04-07	Japan Aviation Electronics Industry Limited	Method and device for flattening surface of solid
CN100440450C (en) *	2003-09-30	2008-12-03	日本航空电子工业株式会社	Method and device for flattening solid surface
CN101467033A (en) *	2006-06-13	2009-06-24	国立大学法人京都大学	Secondary ion mass analysis method and imaging method
JP5246474B2 (en) *	2008-02-08	2013-07-24	Ｔｄｋ株式会社	Milling apparatus and milling method
JP5587550B2 (en) *	2008-12-26	2014-09-10	日本航空電子工業株式会社	Solid surface sealing method and electronic component manufacturing method
KR101256221B1 (en) *	2010-12-30	2013-04-19	한국원자력연구원	Polishing method of metal material surface by ion beam
US8512586B2 (en) *	2011-09-01	2013-08-20	Tel Epion Inc.	Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials
KR102257901B1 (en) *	2014-09-19	2021-05-31	삼성전자주식회사	Semiconductor inspection system and a method of inspecing a semiconductor device using the same
JP6441702B2 (en) *	2015-02-03	2018-12-19	株式会社日立ハイテクサイエンス	Ion source, ion beam apparatus, and sample processing method

Citations (2)

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JP2004146085A (en) *	2002-10-22	2004-05-20	Hitachi Ltd	Gas cluster ion generation method and apparatus
WO2005031838A1 (en) *	2003-09-30	2005-04-07	Japan Aviation Electronics Industry Limited	Method and device for flattening surface of solid

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JPH0666305B2 (en)	1987-06-12	1994-08-24	工業技術院長	Method for forming SOI substrate
US4906594A (en)	1987-06-12	1990-03-06	Agency Of Industrial Science And Technology	Surface smoothing method and method of forming SOI substrate using the surface smoothing method
US5091048A (en)	1990-09-17	1992-02-25	National Semiconductor Corp.	Ion milling to obtain planarization
JPH0758089A (en)	1993-08-18	1995-03-03	Nippon Telegr & Teleph Corp <Ntt>	Semiconductor substrate planarization method
JP3731917B2 (en)	1994-09-06	2006-01-05	三洋電機株式会社	Planarization method of solid surface by gas cluster ion beam
US5814194A (en)	1994-10-20	1998-09-29	Matsushita Electric Industrial Co., Ltd	Substrate surface treatment method
JP3451140B2 (en)	1994-10-26	2003-09-29	科学技術振興事業団	Ultra-precision polishing method using gas cluster ion beam
US6375790B1 (en)	1999-07-19	2002-04-23	Epion Corporation	Adaptive GCIB for smoothing surfaces
JP2003521812A (en)	1999-12-06	2003-07-15	エピオンコーポレイション	Gas cluster ion beam smoother
US6331227B1 (en)	1999-12-14	2001-12-18	Epion Corporation	Enhanced etching/smoothing of dielectric surfaces
JP2001284252A (en)	2000-03-30	2001-10-12	Sanyo Electric Co Ltd	Semiconductor device and manufacturing method thereof
GB2380496B (en)	2000-06-01	2004-05-12	Seagate Technology Llc	Process for production of ultrathin protective overcoats
EP1303866B1 (en) *	2000-07-10	2009-12-09	TEL Epion Inc.	System and method for improving thin films by gas cluster ion be am processing
DE60122379T2 (en)	2000-12-26	2007-08-09	Epion Corp., Billerica	CHARGE CONTROL AND DOSE METROLOGY SYSTEM AND METHOD FOR A GAS-CLUSTER ION BEAM
JP3607265B2 (en)	2001-06-26	2005-01-05	松下電器産業株式会社	Magnetoresistive element
TW550842B (en) *	2001-06-26	2003-09-01	Matsushita Electric Industrial Co Ltd	Magnetic resistance element and its manufacturing method
WO2003048407A1 (en)	2001-10-11	2003-06-12	Epion Corporation	Gcib processing to improve interconnection vias and improved interconnection via
KR100445105B1 (en)	2001-10-25	2004-08-21	주식회사 다산 씨.앤드.아이	Ultra surface smoothing device of ito thin film and method thereof using gas cluster ion beam
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JP3895281B2 (en)	2003-02-18	2007-03-22	Ｔｄｋ株式会社	Pattern forming method, magnetoresistive effect element and magnetic head manufacturing method using the same, head suspension assembly and magnetic disk apparatus
JP4636862B2 (en)	2004-11-29	2011-02-23	株式会社日立製作所	Gas cluster ion beam irradiation system
US8097860B2 (en)	2009-02-04	2012-01-17	Tel Epion Inc.	Multiple nozzle gas cluster ion beam processing system and method of operating

2006
- 2006-05-18 WO PCT/JP2006/309932 patent/WO2006123739A1/en not_active Ceased
- 2006-05-18 US US11/920,362 patent/US8178857B2/en not_active Expired - Fee Related
- 2006-05-18 JP JP2007516337A patent/JP4765106B2/en not_active Expired - Lifetime
- 2006-05-18 CN CNA2006800167520A patent/CN101176183A/en active Pending
- 2006-05-18 KR KR1020077025213A patent/KR100933332B1/en not_active Expired - Fee Related
- 2006-05-18 DE DE602006020866T patent/DE602006020866D1/en not_active Expired - Lifetime
- 2006-05-18 EP EP06756347A patent/EP1890319B1/en not_active Expired - Lifetime

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Publication number	Priority date	Publication date	Assignee	Title
JP2004146085A (en) *	2002-10-22	2004-05-20	Hitachi Ltd	Gas cluster ion generation method and apparatus
WO2005031838A1 (en) *	2003-09-30	2005-04-07	Japan Aviation Electronics Industry Limited	Method and device for flattening surface of solid
EP1670048A1 (en) *	2003-09-30	2006-06-14	Japan Aviation Electronics Industry, Limited	Method and device for flattening surface of solid

Non-Patent Citations (2)

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Title
BOURELLE ET AL: "Sidewall polishing with a gas cluster ion beam for photonic device applications", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - B:BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ELSEVIER, AMSTERDAM, NL, vol. 241, no. 1-4, 1 December 2005 (2005-12-01), pages 622 - 625, XP005183212, ISSN: 0168-583X *
TOYODA N ET AL: "Nano structure formation by gas cluster ion beam irradiations at oblique incidence", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - B:BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ELSEVIER, AMSTERDAM, NL, vol. 232, no. 1-4, 1 May 2005 (2005-05-01), pages 212 - 216, XP004921458, ISSN: 0168-583X *

Also Published As

Publication number	Publication date
KR100933332B1 (en)	2009-12-22
CN101176183A (en)	2008-05-07
EP1890319A1 (en)	2008-02-20
DE602006020866D1 (en)	2011-05-05
JP4765106B2 (en)	2011-09-07
EP1890319B1 (en)	2011-03-23
KR20070120565A (en)	2007-12-24
US20080315128A1 (en)	2008-12-25
US8178857B2 (en)	2012-05-15
JPWO2006123739A1 (en)	2008-12-25
WO2006123739A1 (en)	2006-11-23

Legal Events

Date	Code	Title	Description
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2008-04-23	RIN1	Information on inventor provided before grant (corrected)	Inventor name: SEKI, TOSHIO Inventor name: MATSUO, JIRO Inventor name: BOURELLE, EMMANUEL Inventor name: SATO, AKINOBU Inventor name: SUZUKI, AKIKO
2008-07-02	DAX	Request for extension of the european patent (deleted)
2008-07-02	RBV	Designated contracting states (corrected)	Designated state(s): DE FR GB
2008-12-31	A4	Supplementary search report drawn up and despatched	Effective date: 20081127
2009-06-10	17Q	First examination report despatched	Effective date: 20090507
2010-06-09	RTI1	Title (correction)	Free format text: METHOD FOR FLATTENING SOLID SURFACE
2010-10-21	GRAP	Despatch of communication of intention to grant a patent	Free format text: ORIGINAL CODE: EPIDOSNIGR1
2010-11-17	RTI1	Title (correction)	Free format text: METHOD FOR FLATTENING A SOLID SURFACE
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