EP2064710A4 - DEFORMATION-CONTROLLED STRUCTURES IN SEMICONDUCTOR INTERCONNECTS AND NANOMEMBRANES FOR STABLE ELECTRONIC DEVICES - Google Patents

DEFORMATION-CONTROLLED STRUCTURES IN SEMICONDUCTOR INTERCONNECTS AND NANOMEMBRANES FOR STABLE ELECTRONIC DEVICES

Info

Publication number
EP2064710A4
EP2064710A4 EP07841968A EP07841968A EP2064710A4 EP 2064710 A4 EP2064710 A4 EP 2064710A4 EP 07841968 A EP07841968 A EP 07841968A EP 07841968 A EP07841968 A EP 07841968A EP 2064710 A4 EP2064710 A4 EP 2064710A4
Authority
EP
European Patent Office
Prior art keywords
nanomembranes
deformation
electronic devices
stable electronic
controlled structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP07841968A
Other languages
German (de)
French (fr)
Other versions
EP2064710A2 (en
Inventor
John A Rogers
Matthew Meitl
Yugang Sun
Heung Cho Ko
Andrew Carlson
Won Mook Choi
Mark Stoykovich
Hanqing Jiang
Yonggang Huang
Ralph G Nuzzo
Seong Jun Kang
Keon Jae Lee
Zhengtao Zhu
Etienne Menard
Hoon-Sik Kim
Dahl-Young Khang
Jong-Hyun Ahn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Illinois at Urbana Champaign
University of Illinois System
Original Assignee
University of Illinois at Urbana Champaign
University of Illinois System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Illinois at Urbana Champaign, University of Illinois System filed Critical University of Illinois at Urbana Champaign
Publication of EP2064710A2 publication Critical patent/EP2064710A2/en
Publication of EP2064710A4 publication Critical patent/EP2064710A4/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0078—Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0277—Bendability or stretchability details
    • H05K1/0283—Stretchable printed circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/688—Flexible insulating substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0133—Elastomeric or compliant polymer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09045—Locally raised area or protrusion of insulating substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0271—Mechanical force other than pressure, e.g. shearing or pulling
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/201—Integrated devices having a three-dimensional layout, e.g. 3D ICs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Device Packages (AREA)
  • Thin Film Transistor (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Light Receiving Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Pressure Sensors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Structure Of Printed Boards (AREA)
  • Recrystallisation Techniques (AREA)
EP07841968A 2006-09-06 2007-09-06 DEFORMATION-CONTROLLED STRUCTURES IN SEMICONDUCTOR INTERCONNECTS AND NANOMEMBRANES FOR STABLE ELECTRONIC DEVICES Ceased EP2064710A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US82468306P 2006-09-06 2006-09-06
US94462607P 2007-06-18 2007-06-18
PCT/US2007/077759 WO2008030960A2 (en) 2006-09-06 2007-09-06 Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

Publications (2)

Publication Number Publication Date
EP2064710A2 EP2064710A2 (en) 2009-06-03
EP2064710A4 true EP2064710A4 (en) 2011-05-04

Family

ID=39158048

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07841968A Ceased EP2064710A4 (en) 2006-09-06 2007-09-06 DEFORMATION-CONTROLLED STRUCTURES IN SEMICONDUCTOR INTERCONNECTS AND NANOMEMBRANES FOR STABLE ELECTRONIC DEVICES

Country Status (7)

Country Link
EP (1) EP2064710A4 (en)
JP (3) JP5578509B2 (en)
KR (5) KR101453419B1 (en)
CN (2) CN101681695B (en)
MY (2) MY172115A (en)
TW (3) TWI654770B (en)
WO (1) WO2008030960A2 (en)

Families Citing this family (185)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7557433B2 (en) 2004-10-25 2009-07-07 Mccain Joseph H Microelectronic device with integrated energy source
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
US8217381B2 (en) 2004-06-04 2012-07-10 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US7622367B1 (en) 2004-06-04 2009-11-24 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
MY149190A (en) 2006-09-20 2013-07-31 Univ Illinois Release strategies for making transferable semiconductor structures, devices and device components
CN102176486B (en) 2007-01-17 2015-06-24 伊利诺伊大学评议会 Optical systems fabricated by printing-based assembly
EP2255378B1 (en) 2008-03-05 2015-08-05 The Board of Trustees of the University of Illinois Stretchable and foldable electronic devices
US8470701B2 (en) 2008-04-03 2013-06-25 Advanced Diamond Technologies, Inc. Printable, flexible and stretchable diamond for thermal management
US7927976B2 (en) 2008-07-23 2011-04-19 Semprius, Inc. Reinforced composite stamp for dry transfer printing of semiconductor elements
WO2010036807A1 (en) 2008-09-24 2010-04-01 The Board Of Trustees Of The University Of Illinois Arrays of ultrathin silicon solar microcells
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US9123614B2 (en) 2008-10-07 2015-09-01 Mc10, Inc. Methods and applications of non-planar imaging arrays
JP5646492B2 (en) 2008-10-07 2014-12-24 エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． Stretchable integrated circuit and device with sensor array
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US9545285B2 (en) 2011-10-05 2017-01-17 Mc10, Inc. Cardiac catheter employing conformal electronics for mapping
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US9119533B2 (en) 2008-10-07 2015-09-01 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8372726B2 (en) 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
KR101041139B1 (en) * 2008-11-04 2011-06-13 삼성모바일디스플레이주식회사 Thin film transistor, manufacturing method thereof and organic light emitting display device comprising same
WO2010056857A2 (en) * 2008-11-12 2010-05-20 Mc10, Inc. Extremely stretchable electronics
KR101736722B1 (en) 2008-11-19 2017-05-17 셈프리어스 아이엔씨. Printing semiconductor elements by shear-assisted elastomeric stamp transfer
EP2386117A4 (en) * 2009-01-12 2017-12-27 Mc10, Inc. Methods and applications of non-planar imaging arrays
WO2010086034A1 (en) 2009-01-30 2010-08-05 Interuniversitair Microelektronica Centrum Vzw Stretchable electronic device
KR101870690B1 (en) 2009-05-12 2018-06-25 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
FR2947063B1 (en) 2009-06-19 2011-07-01 Commissariat Energie Atomique OVERHEAD PROJECTOR
US8261660B2 (en) 2009-07-22 2012-09-11 Semprius, Inc. Vacuum coupled tool apparatus for dry transfer printing semiconductor elements
KR101077789B1 (en) 2009-08-07 2011-10-28 한국과학기술원 LED display manufacturing method and LED display manufactured thereby
KR101113692B1 (en) 2009-09-17 2012-02-27 한국과학기술원 A manufacturing method for solar cell and GaN solar cell manufactured by the same
WO2011041727A1 (en) 2009-10-01 2011-04-07 Mc10, Inc. Protective cases with integrated electronics
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
JP6046491B2 (en) 2009-12-16 2016-12-21 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ In vivo electrophysiology using conformal electronics
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
WO2011087301A2 (en) 2010-01-15 2011-07-21 성균관대학교산학협력단 Graphene protective film serving as a gas and moisture barrier, method for forming same, and use thereof
US8450779B2 (en) * 2010-03-08 2013-05-28 International Business Machines Corporation Graphene based three-dimensional integrated circuit device
WO2011112931A1 (en) 2010-03-12 2011-09-15 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
KR101724273B1 (en) 2010-03-17 2017-04-07 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 implantable biomedical devices on bioresorbable substrates
CN103181025A (en) * 2010-04-12 2013-06-26 塔夫茨大学 Silk electronic components
AU2011308078B2 (en) * 2010-09-27 2015-10-01 Techtonic Pty Ltd Undulatory structures
CN102001622B (en) * 2010-11-08 2013-03-20 中国科学技术大学 Method for preparing air bridge type nano device
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
WO2012125494A2 (en) 2011-03-11 2012-09-20 Mc10, Inc. Integrated devices to facilitate quantitative assays and diagnostics
TWI455341B (en) * 2011-03-21 2014-10-01 Motech Ind Inc Method for manufacturing solar cells
CN107081937A (en) * 2011-04-18 2017-08-22 阿迪达斯股份公司 For continuously encapsulating the method and apparatus of elongated member and the elongated member of the encapsulation obtained
US9765934B2 (en) 2011-05-16 2017-09-19 The Board Of Trustees Of The University Of Illinois Thermally managed LED arrays assembled by printing
JP2014523633A (en) 2011-05-27 2014-09-11 エムシー１０ インコーポレイテッド Electronic, optical and / or mechanical devices and systems and methods of manufacturing these devices and systems
US8934965B2 (en) 2011-06-03 2015-01-13 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
CN102244015B (en) * 2011-06-17 2012-12-19 华中科技大学 Method for performing flexible electronic patterning on pretensioning elastic base plate
US9757050B2 (en) 2011-08-05 2017-09-12 Mc10, Inc. Catheter balloon employing force sensing elements
WO2013022853A1 (en) 2011-08-05 2013-02-14 Mc10, Inc. Catheter balloon methods and apparatus employing sensing elements
EP3470830A1 (en) 2011-09-01 2019-04-17 MC10 Inc. Electronics for detection of a condition of tissue
HK1204205A1 (en) 2011-12-01 2015-11-06 The Board Of Trustees Of The University Of Illinois Transient devices designed to undergo programmable transformations
FR2985371A1 (en) * 2011-12-29 2013-07-05 Commissariat Energie Atomique METHOD FOR MANUFACTURING A MULTILAYER STRUCTURE ON A SUPPORT
US8492208B1 (en) * 2012-01-05 2013-07-23 International Business Machines Corporation Compressive (PFET) and tensile (NFET) channel strain in nanowire FETs fabricated with a replacement gate process
CN102610534A (en) * 2012-01-13 2012-07-25 华中科技大学 Stretchable RFID (Radio Frequency Identification) electronic tag and manufacturing method thereof
CN111554781B (en) 2012-03-19 2024-04-12 亮锐控股有限公司 Singulation of light emitting devices before and after phosphor application
CN102610672A (en) * 2012-03-23 2012-07-25 合肥工业大学 Heterojunction type photoelectric detector and manufacturing method thereof
EP2830492B1 (en) * 2012-03-30 2021-05-19 The Board of Trustees of the University of Illinois Appendage mountable electronic devices conformable to surfaces and method of making the same
US9247637B2 (en) 2012-06-11 2016-01-26 Mc10, Inc. Strain relief structures for stretchable interconnects
US9226402B2 (en) * 2012-06-11 2015-12-29 Mc10, Inc. Strain isolation structures for stretchable electronics
JP2015521894A (en) 2012-07-05 2015-08-03 エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． Catheter device including flow sensing
US9295842B2 (en) 2012-07-05 2016-03-29 Mc10, Inc. Catheter or guidewire device including flow sensing and use thereof
CN102903841B (en) * 2012-09-18 2015-09-09 中国科学院宁波材料技术与工程研究所 A kind of temperature controlled magnetic electron device, its preparation method and application
KR20150072415A (en) 2012-10-09 2015-06-29 엠씨10, 인크 Conformal electronics integrated with apparel
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
CN102983791A (en) * 2012-10-26 2013-03-20 苏州大学 Temperature difference alternating current power generation device and power generation method thereof
KR102712705B1 (en) 2012-12-28 2024-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102051519B1 (en) 2013-02-25 2019-12-03 삼성전자주식회사 Thin Film Transistor on Fiber and Manufacturing Method of the same
WO2014169218A2 (en) 2013-04-12 2014-10-16 The Board Of Trustees Of The University Of Illinois Materials, electronic systems and modes for active and passive transience
US9706647B2 (en) 2013-05-14 2017-07-11 Mc10, Inc. Conformal electronics including nested serpentine interconnects
EP3030873A4 (en) 2013-08-05 2017-07-05 Mc10, Inc. Flexible temperature sensor including conformable electronics
KR20160065948A (en) 2013-10-07 2016-06-09 엠씨10, 인크 Conformal sensor systems for sensing and analysis
CN103560157B (en) * 2013-11-19 2016-02-24 中国科学院上海微系统与信息技术研究所 Strain structure and preparation method thereof
EP3071096A4 (en) 2013-11-22 2017-08-09 Mc10, Inc. Conformal sensor systems for sensing and analysis of cardiac activity
KR102396850B1 (en) 2014-01-06 2022-05-11 메디데이타 솔루션즈, 인코포레이티드 Encapsulated conformal electronic systems and devices, and methods of making and using the same
US10485118B2 (en) 2014-03-04 2019-11-19 Mc10, Inc. Multi-part flexible encapsulation housing for electronic devices and methods of making the same
CN106062544B (en) 2014-03-12 2020-07-07 Mc10股份有限公司 Quantification of assay changes
CN103869607A (en) * 2014-03-18 2014-06-18 无锡中微掩模电子有限公司 Method for removing chromium metal film from binary mask
EP3138028A4 (en) 2014-05-02 2018-01-24 Synopsys, Inc. 3d tcad simulation
JP2017524542A (en) 2014-05-28 2017-08-31 スリーエム イノベイティブ プロパティズ カンパニー MEMS device on flexible substrate
JP6195399B2 (en) * 2014-07-11 2017-09-13 インテル・コーポレーション Bendable and stretchable electronic device and manufacturing method thereof
KR102085212B1 (en) * 2014-07-20 2020-03-05 엑스-셀레프린트 리미티드 Apparatus and methods for micro-transfer printing
KR102161644B1 (en) 2014-08-20 2020-10-06 삼성디스플레이 주식회사 Stretchable display panel and display device having the same
CN104153128B (en) * 2014-08-26 2017-03-08 青岛大学 A kind of preparation method based on ordered arrangement distorted-structure flexible extensible device
US9899330B2 (en) 2014-10-03 2018-02-20 Mc10, Inc. Flexible electronic circuits with embedded integrated circuit die
US10297572B2 (en) 2014-10-06 2019-05-21 Mc10, Inc. Discrete flexible interconnects for modules of integrated circuits
USD781270S1 (en) 2014-10-15 2017-03-14 Mc10, Inc. Electronic device having antenna
US9398705B2 (en) * 2014-12-02 2016-07-19 Flextronics Ap, Llc. Stretchable printed electronic sheets to electrically connect uneven two dimensional and three dimensional surfaces
US9991326B2 (en) 2015-01-14 2018-06-05 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device comprising flexible substrate and light-emitting element
KR102456698B1 (en) 2015-01-15 2022-10-19 삼성디스플레이 주식회사 Stretchable display device
KR102356697B1 (en) * 2015-01-15 2022-01-27 삼성디스플레이 주식회사 Stretchable display device and manufacturing method of the same
KR102320382B1 (en) 2015-01-28 2021-11-02 삼성디스플레이 주식회사 Electronic device
CN107530004A (en) 2015-02-20 2018-01-02 Mc10股份有限公司 The automatic detection and construction of wearable device based on personal situation, position and/or orientation
US10398343B2 (en) 2015-03-02 2019-09-03 Mc10, Inc. Perspiration sensor
KR102335807B1 (en) * 2015-03-10 2021-12-08 삼성디스플레이 주식회사 Display device
KR102385327B1 (en) * 2015-04-06 2022-04-12 삼성디스플레이 주식회사 Flexible display device and method of manufacturing the same
MX2017015587A (en) 2015-06-01 2018-08-23 Univ Illinois ALTERNATIVE METHOD FOR UV SENSOR.
BR112017025609A2 (en) 2015-06-01 2018-08-07 The Board Of Trustees Of The University Of Illinois miniaturized wireless electronic systems with near field communication capabilities
US9841548B2 (en) 2015-06-30 2017-12-12 Apple Inc. Electronic devices with soft input-output components
US10026721B2 (en) 2015-06-30 2018-07-17 Apple Inc. Electronic devices with soft input-output components
CN105049033B (en) * 2015-07-01 2017-11-24 东南大学 Nor gate based on GaAs base low-leakage current double cantilever beam switch
US10653332B2 (en) 2015-07-17 2020-05-19 Mc10, Inc. Conductive stiffener, method of making a conductive stiffener, and conductive adhesive and encapsulation layers
WO2017031129A1 (en) 2015-08-19 2017-02-23 Mc10, Inc. Wearable heat flux devices and methods of use
EP4079383A3 (en) 2015-10-01 2023-02-22 Medidata Solutions, Inc. Method and system for interacting with a virtual environment
CN108289630A (en) 2015-10-05 2018-07-17 Mc10股份有限公司 Method and system for nerve modulation and stimulation
DE102015014256B4 (en) 2015-11-05 2020-06-18 Airbus Defence and Space GmbH Microelectronic module for cleaning a surface, modular array and method for cleaning a surface
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
WO2017085849A1 (en) * 2015-11-19 2017-05-26 三井金属鉱業株式会社 Production method for printed wiring board having dielectric layer
CN105405983B (en) * 2015-12-14 2017-05-10 吉林大学 Stretchable organic electroluminescent devices with periodic regular wrinkled structures
CN106920800B (en) * 2015-12-25 2019-07-23 昆山工研院新型平板显示技术中心有限公司 Flexible display device and forming method thereof
CN115175014A (en) 2016-02-22 2022-10-11 美谛达解决方案公司 body sensor system
WO2017147053A1 (en) 2016-02-22 2017-08-31 Mc10, Inc. System, device, and method for coupled hub and sensor node on-body acquisition of sensor information
KR102455039B1 (en) * 2016-03-18 2022-10-17 삼성디스플레이 주식회사 Stretchable display device
WO2017184705A1 (en) 2016-04-19 2017-10-26 Mc10, Inc. Method and system for measuring perspiration
ITUA20162943A1 (en) * 2016-04-27 2017-10-27 Pilegrowth Tech S R L Method for the industrial manufacture of a semiconductor structure with reduced bowing.
US10209602B2 (en) * 2016-05-31 2019-02-19 E Ink Corporation Stretchable electro-optic displays
US10002222B2 (en) * 2016-07-14 2018-06-19 Arm Limited System and method for perforating redundant metal in self-aligned multiple patterning
US10447347B2 (en) 2016-08-12 2019-10-15 Mc10, Inc. Wireless charger and high speed data off-loader
CN106229038B (en) * 2016-09-07 2017-10-24 东华大学 A kind of stretchable electrically conducting transparent method for producing elastomers based on multilevel hierarchy graphene
JP2018060932A (en) * 2016-10-06 2018-04-12 ローム株式会社 LED package
WO2018075913A1 (en) 2016-10-20 2018-04-26 Quantum Diamond Technologies Inc. Methods and apparatus for magnetic particle analysis using wide-field diamond magnetic imaging
JP2018078272A (en) * 2016-10-31 2018-05-17 スリーエム イノベイティブ プロパティズ カンパニー Three-dimensional shape heat conductive molded body and manufacturing method thereof
CN106601933B (en) * 2016-12-12 2018-02-23 吉林大学 A Fabrication Method of Stretchable Electronic Devices with Regular Wrinkle Structure
EP3559668B1 (en) 2016-12-23 2023-07-19 Quantum Diamond Technologies Inc. Methods and apparatus for magnetic multi-bead assays
DE102017100053A1 (en) 2017-01-03 2018-07-05 Infineon Technologies Ag Frame assembly after film expansion
US11127778B2 (en) 2017-02-24 2021-09-21 Flexucell Aps Light emitting transducer
JP2018179501A (en) * 2017-04-03 2018-11-15 日本精工株式会社 Proximity sensor
US10962627B2 (en) * 2017-04-12 2021-03-30 Sense Photonics, Inc. Ultra-small vertical cavity surface emitting laser (VCSEL) and arrays incorporating the same
US20180323239A1 (en) * 2017-05-03 2018-11-08 Innolux Corporation Display device
CN107248518B (en) * 2017-05-26 2020-04-17 京东方科技集团股份有限公司 Photoelectric sensor, manufacturing method thereof and display device
CN110753976B (en) * 2017-06-12 2021-06-08 3M创新有限公司 stretchable conductor
US11164982B2 (en) 2017-07-14 2021-11-02 King Abdullah University Of Science And Technology Flexible and strechable imager, method of making a flexible and stretchable imager, and method of using an imaging device having a flexible and stretchable imager
EP3662293B1 (en) 2017-07-31 2022-09-07 Quantum Diamond Technologies Inc. Sensor system comprising a sample cartridge including a flexible membrane for supporting a sample
WO2019046860A1 (en) 2017-09-01 2019-03-07 Miroculus Inc. Digital microfluidics devices and methods of using them
CN107634054A (en) * 2017-09-18 2018-01-26 天津大学 Silicon nanometer film revolution word logic inverter and preparation method thereof in flexible substrate
US10205303B1 (en) * 2017-10-18 2019-02-12 Lumentum Operations Llc Vertical-cavity surface-emitting laser thin wafer bowing control
EP3709775B1 (en) * 2017-11-07 2025-07-02 Dai Nippon Printing Co., Ltd. Stretchable circuit substrate and article
CN108009317A (en) * 2017-11-09 2018-05-08 武汉大学 A kind of conductivity studies emulation of composite material and modeling method
CN111343950A (en) * 2017-11-15 2020-06-26 史密夫及内修公开有限公司 Integrated wound monitoring and/or therapy dressing and system implementing sensors
CN109859623B (en) * 2017-11-30 2021-05-18 云谷（固安）科技有限公司 Array substrate and preparation method thereof and display screen
KR101974575B1 (en) * 2017-12-01 2019-05-02 포항공과대학교 산학협력단 Manufacturing method for microscopic multi-slope sturcutre using synchrotron x-ray
CN108417592A (en) * 2018-02-12 2018-08-17 中国科学院半导体研究所 Infrared imaging device and its preparation method, bionic infrared spherical camera
KR102077306B1 (en) * 2018-02-14 2020-02-13 광운대학교 산학협력단 Real-time Glucose Monitoring Sensor System and Method of Manufacturing Glucose Sensor Based on Low Temperature Solution Process
CN109346504B (en) * 2018-09-30 2021-06-29 云谷（固安）科技有限公司 Flexible display panel and display device
CN109437091A (en) * 2018-10-23 2019-03-08 中山大学 A method of preparing micro-nano structure in elastic substrate
CN111148364B (en) * 2018-11-05 2021-01-26 北京梦之墨科技有限公司 Flexible stretchable circuit and manufacturing method thereof
US12091357B2 (en) 2021-08-05 2024-09-17 Corning Incorporated Dynamically bendable automotive interior display systems
US11116098B2 (en) * 2018-12-10 2021-09-07 Corning Incorporated Dynamically bendable automotive interior display systems
CN109671869B (en) * 2018-12-12 2020-06-16 武汉华星光电半导体显示技术有限公司 Manufacturing method of composite film layer and display device
CN109637366B (en) * 2018-12-28 2020-10-09 厦门天马微电子有限公司 Jig and bending method of display module
CN113766975B (en) 2019-02-28 2023-12-29 米罗库鲁斯公司 Digital microfluidic devices and methods of use
CN111724676B (en) * 2019-03-21 2022-09-02 昆山工研院新型平板显示技术中心有限公司 Stretchable wire, manufacturing method thereof and display device
CN119158636A (en) 2019-04-08 2024-12-20 米罗库鲁斯公司 Multi-cassette digital microfluidic device and method of use
DE102019111964A1 (en) * 2019-05-08 2020-11-12 Danfoss Silicon Power Gmbh A semiconductor module having a first substrate, a second substrate and a spacer which separates the substrates from one another
CN110393507B (en) * 2019-08-01 2020-12-25 清华大学 Structural design of flexible extensible electronic device and manufacturing method thereof
CN110797148B (en) * 2019-10-08 2021-07-30 上海交通大学 Superconducting tape suitable for non-insulated coil, non-insulated coil and preparation method thereof
CN110683508B (en) * 2019-10-18 2023-05-23 北京元芯碳基集成电路研究院 Preparation method of carbon nano tube parallel array
CN110808295B (en) * 2019-11-11 2021-04-23 重庆中易智芯科技有限责任公司 Semiconductor detector of three-dimensional electrostriction collecting electrode and preparation method thereof
CN110697646A (en) * 2019-11-22 2020-01-17 上海幂方电子科技有限公司 Electronic skin and preparation method thereof
US11062936B1 (en) 2019-12-19 2021-07-13 X Display Company Technology Limited Transfer stamps with multiple separate pedestals
CN111063658B (en) * 2019-12-30 2020-09-29 清华大学 Fabrication method of flexible and extensible electronic device
WO2021159214A1 (en) * 2020-02-12 2021-08-19 Rayleigh Solar Tech Inc. High performance perovskite solar cells, module design, and manufacturing processes therefor
GB2593864B (en) * 2020-02-28 2023-01-04 X Fab France Sas Improved transfer printing for RF applications
CN112967971B (en) * 2020-05-27 2023-04-18 重庆康佳光电技术研究院有限公司 Micro-LED transfer substrate and preparation method thereof
KR102393781B1 (en) * 2020-07-07 2022-05-04 서울대학교산학협력단 Flexible device
CN112133198B (en) * 2020-09-29 2022-04-22 厦门天马微电子有限公司 Stretchable display panel and stretchable display device
CN112606585B (en) * 2020-12-02 2022-05-31 潍坊歌尔微电子有限公司 Device transfer processing method and transfer processing method of micro-microphone dustproof device
KR102591096B1 (en) * 2020-12-15 2023-10-18 연세대학교 산학협력단 Method for manufacturing a photodetector using tensile strain, photodetector manufactured thereby, and device for manufacturing the same
KR102412729B1 (en) 2021-01-18 2022-06-23 연세대학교 산학협력단 Stretchable display device
KR102553142B1 (en) * 2021-06-25 2023-07-06 경희대학교 산학협력단 Pressure sensor using conductive polymer material including structure to improve sensitivity
KR102582188B1 (en) * 2021-07-22 2023-09-26 한국과학기술원 Stretchable oleds using laser patterned plastic substrate and method for manufacturing the same
CN113542755B (en) * 2021-07-27 2022-06-21 展讯通信（上海）有限公司 Method and system for generating two-dimensional wedge-shaped mask
CN115915816A (en) * 2021-08-16 2023-04-04 华为技术有限公司 Stretchable device and method of making the same
WO2023023976A1 (en) * 2021-08-25 2023-03-02 京东方科技集团股份有限公司 Radio frequency microelectronic mechanical switch and radio frequency device
CN114286513B (en) * 2021-11-30 2024-02-06 通元科技(惠州)有限公司 Asymmetric prestress eliminating type LED backboard and manufacturing method thereof
CN114355489B (en) * 2022-01-13 2023-05-16 西华大学 Curved fly-eye lens based on DMD digital lithography and preparation method thereof
KR102711952B1 (en) 2022-01-20 2024-09-27 국립공주대학교 산학협력단 Wave-shaped steretchable wiring and its manufacturing method
CA3243135A1 (en) * 2022-01-21 2023-07-27 Raymond DeCorby Monolithic optical pressure sensors and transducers
EP4500580A4 (en) * 2022-03-30 2026-03-11 Council Scient Ind Res METHOD FOR THE PRODUCTION OF SILICON CHIP CARRIERS BY WET MASS MICROPROCESSING FOR IR DETECTOR APPLICATIONS
KR102749617B1 (en) * 2022-07-08 2025-01-02 국립공주대학교 산학협력단 Flexible wavy circuit and its manufacturing method
KR102906153B1 (en) * 2023-03-02 2025-12-30 경희대학교 산학협력단 Method for manufacturing 3D film structure using 3D printing and compression buckling, element applying the manufacturing method, and method for manufacturing the same
CN116313797B (en) * 2023-03-24 2025-08-15 厦门市三安集成电路有限公司 HEMT radio frequency device manufacturing method and HEMT radio frequency device
IT202300009687A1 (en) * 2023-05-15 2024-11-15 Istituto Naz Fisica Nucleare Container for radiation detector and detector apparatus
KR102916893B1 (en) * 2024-03-15 2026-01-30 영남대학교 산학협력단 Selective remote epitaxy method based on origami structure for stretchable displays
CN119761127B (en) * 2024-12-20 2025-12-05 湖北江城实验室 Semiconductor structure design methods, design equipment, and computer-readable storage media

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005122285A2 (en) * 2004-06-04 2005-12-22 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US20060169989A1 (en) * 2003-03-28 2006-08-03 Rabin Bhattacharya Deformable organic devices
US20060286785A1 (en) * 2004-06-04 2006-12-21 The Board Of Trustees Of The University Of Illinois A Stretchable Form of Single Crystal Silicon for High Performance Electronics on Rubber Substrates

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763864A (en) * 1980-09-29 1982-04-17 Messerschmitt Boelkow Blohm Solar battery mechanism
US4766670A (en) * 1987-02-02 1988-08-30 International Business Machines Corporation Full panel electronic packaging structure and method of making same
US5086785A (en) * 1989-08-10 1992-02-11 Abrams/Gentille Entertainment Inc. Angular displacement sensors
US5475514A (en) * 1990-12-31 1995-12-12 Kopin Corporation Transferred single crystal arrayed devices including a light shield for projection displays
US5375397B1 (en) * 1993-06-22 1998-11-10 Robert J Ferrand Curve-conforming sensor array pad and method of measuring saddle pressures on a horse
JPH08298334A (en) * 1995-04-26 1996-11-12 Mitsubishi Electric Corp Solar cell plate
US6784023B2 (en) 1996-05-20 2004-08-31 Micron Technology, Inc. Method of fabrication of stacked semiconductor devices
DE19637626A1 (en) 1996-09-16 1998-03-26 Bosch Gmbh Robert Flexible interconnect connection
FR2786037B1 (en) * 1998-11-16 2001-01-26 Alstom Technology SHIELDED ELECTRICAL CONDUCTION BAR FOR HIGH VOLTAGE ELECTRICAL STATION
US6150602A (en) * 1999-05-25 2000-11-21 Hughes Electronics Corporation Large area solar cell extended life interconnect
WO2001008242A1 (en) * 1999-07-21 2001-02-01 E Ink Corporation Preferred methods for producing electrical circuit elements used to control an electronic display
JP2001352089A (en) * 2000-06-08 2001-12-21 Showa Shell Sekiyu Kk Thermal expansion distortion prevention type solar cell module
US6743982B2 (en) * 2000-11-29 2004-06-01 Xerox Corporation Stretchable interconnects using stress gradient films
GB0029312D0 (en) * 2000-12-01 2001-01-17 Philips Corp Intellectual Pty Flexible electronic device
CN1282026C (en) * 2001-03-06 2006-10-25 皇家菲利浦电子有限公司 Display device
US7273987B2 (en) * 2002-03-21 2007-09-25 General Electric Company Flexible interconnect structures for electrical devices and light sources incorporating the same
JP3980918B2 (en) * 2002-03-28 2007-09-26 株式会社東芝 Active matrix substrate, method for manufacturing the same, and display device
JP2003323741A (en) 2002-04-30 2003-11-14 National Institute Of Advanced Industrial & Technology Optical memory
US20050227389A1 (en) * 2004-04-13 2005-10-13 Rabin Bhattacharya Deformable organic devices
US7491892B2 (en) * 2003-03-28 2009-02-17 Princeton University Stretchable and elastic interconnects
GB0323285D0 (en) * 2003-10-04 2003-11-05 Koninkl Philips Electronics Nv Device and method of making a device having a patterned layer on a flexible substrate
WO2005098969A1 (en) * 2004-04-08 2005-10-20 Sharp Kabushiki Kaisha Solar battery and solar battery module
US7629691B2 (en) * 2004-06-16 2009-12-08 Honeywell International Inc. Conductor geometry for electronic circuits fabricated on flexible substrates
FR2875339B1 (en) * 2004-09-16 2006-12-08 St Microelectronics Sa MOS TRANSISTOR WITH DEFORMABLE GRID
US20060132025A1 (en) * 2004-12-22 2006-06-22 Eastman Kodak Company Flexible display designed for minimal mechanical strain
US20060160943A1 (en) * 2005-01-18 2006-07-20 Weir James P Water-based flock adhesives for thermoplastic substrates
CN2779218Y (en) * 2005-02-01 2006-05-10 广德利德照明有限公司 Connecting line of a tubular LED decorative lamp
MY152238A (en) * 2005-06-02 2014-09-15 Univ Illinois Printable semiconductor structures and related methods of making and assembling
JP7099160B2 (en) 2018-08-10 2022-07-12 住友電気工業株式会社 Optical fiber manufacturing method
US11394720B2 (en) 2019-12-30 2022-07-19 Itron, Inc. Time synchronization using trust aggregation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060169989A1 (en) * 2003-03-28 2006-08-03 Rabin Bhattacharya Deformable organic devices
WO2005122285A2 (en) * 2004-06-04 2005-12-22 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US20060286785A1 (en) * 2004-06-04 2006-12-21 The Board Of Trustees Of The University Of Illinois A Stretchable Form of Single Crystal Silicon for High Performance Electronics on Rubber Substrates

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
JONES J ET AL: "Stretchable Interconnects for Elastic Electronic Surfaces", PROCEEDINGS OF THE IEEE, IEEE. NEW YORK, US, vol. 93, no. 8, 1 August 2005 (2005-08-01), pages 1459 - 1467, XP011136590, ISSN: 0018-9219, DOI: 10.1109/JPROC.2005.851502 *
JONES JOYELLE ET AL: "Stretchable wavy metal interconnects", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A, AVS /AIP, MELVILLE, NY., US, vol. 22, no. 4, 1 July 2004 (2004-07-01), pages 1723 - 1725, XP012073801, ISSN: 0734-2101, DOI: 10.1116/1.1756879 *
See also references of WO2008030960A2 *
Y. SUN ET AL: "Buckled and Wavy Ribbons of GaAs for High-Performance Electronics on Elastomeric Substrates", ADVANCED MATERIALS, vol. 18, no. 21, 3 November 2006 (2006-11-03), DE, pages 2857 - 2862, XP055351598, ISSN: 0935-9648, DOI: 10.1002/adma.200600646 *
YUGANG SUN ET AL: "Controlled buckling of semiconductor nanoribbons for stretchable electronics", NATURE NANOTECHNOLOGY, vol. 1, no. 3, 1 December 2006 (2006-12-01), pages 201 - 207, XP055165050, ISSN: 1748-3387, DOI: 10.1038/nnano.2006.131 *
YUGANG SUN ET AL: "Printed Arrays of Aligned GaAs Wires for Flexible Transistors, Diodes, and Circuits on Plastic Substrates", SMALL, vol. 2, no. 11, 7 August 2006 (2006-08-07), pages 1330 - 1334, XP055165207, ISSN: 1613-6810, DOI: 10.1002/smll.200500528 *

Also Published As

Publication number Publication date
EP2064710A2 (en) 2009-06-03
KR20150003308A (en) 2015-01-08
KR20180002083A (en) 2018-01-05
KR101453419B1 (en) 2014-10-23
CN101681695A (en) 2010-03-24
TWI485863B (en) 2015-05-21
WO2008030960A2 (en) 2008-03-13
KR20140043244A (en) 2014-04-08
CN101681695B (en) 2013-04-10
MY172115A (en) 2019-11-14
TW200836353A (en) 2008-09-01
JP5578509B2 (en) 2014-08-27
MY149475A (en) 2013-08-30
TW201434163A (en) 2014-09-01
KR101814683B1 (en) 2018-01-05
CN103213935B (en) 2017-03-01
JP2013239716A (en) 2013-11-28
KR101612749B1 (en) 2016-04-27
CN103213935A (en) 2013-07-24
KR101689747B1 (en) 2016-12-27
TWI654770B (en) 2019-03-21
JP5735585B2 (en) 2015-06-17
KR20090086199A (en) 2009-08-11
TW201735380A (en) 2017-10-01
TWI587527B (en) 2017-06-11
JP2015216365A (en) 2015-12-03
KR20160140962A (en) 2016-12-07
JP2010503238A (en) 2010-01-28
WO2008030960A3 (en) 2008-07-24
KR102087337B1 (en) 2020-03-11

Similar Documents

Publication Publication Date Title
EP2064710A4 (en) DEFORMATION-CONTROLLED STRUCTURES IN SEMICONDUCTOR INTERCONNECTS AND NANOMEMBRANES FOR STABLE ELECTRONIC DEVICES
BRPI0820225A2 (en) Semiconductor Device and Monitor Device
DE602007013318D1 (en) Semiconductor device
TWI320570B (en) Memory devices and integrated circuits
DE602008005533D1 (en) Parallax barrier and electronic display device
TWI341021B (en) Electronic substrate, semiconductor device, and electronic device
EP2174234A4 (en) DISCOVERING GADGET SOFTWARE IN COMPUTING DEVICES
EP1805792A4 (en) SUBSTRATE PROCESSING DEVICE
EP1956648A4 (en) SEMICONDUCTOR DEVICE
DE602007013972D1 (en) Semiconductor device
DE602007002105D1 (en) Semiconductor device
EP1974386A4 (en) PASSIVATION LAYER USED IN FLEXIBLE ELECTRONIC DEVICES
EP2188811A4 (en) NOISE REDUCTION IN SEMICONDUCTOR DEVICES
EP2070019A4 (en) SEMICONDUCTOR DEVICE
DE602008001700D1 (en) Active matrix substrate and electronic display device
EP2023393A4 (en) SEMICONDUCTOR DEVICE
DE602006009201D1 (en) Camera module and electronic device
DE602006004419D1 (en) Liquid crystal display and electronic device
TWI350595B (en) Electronic device contact structures
DE602006012674D1 (en) Semiconductor device and associated mounting structure
EP2040302A4 (en) SEMICONDUCTOR DEVICE
DE602007012609D1 (en) Imaging device and electronic device
EP2031510A4 (en) INTEGRATED SEMICONDUCTOR CIRCUIT
FR2889620B1 (en) POLYOXOMETALLATES IN MEMORY DEVICES
DE602006012417D1 (en) Camera module and electronic device

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20090408

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK RS

RIN1 Information on inventor provided before grant (corrected)

Inventor name: CARLSON, ANDREW

Inventor name: ROGERS, JOHN A.

Inventor name: SUN, YUGANG

Inventor name: HUANG, YONGGANG

Inventor name: KIM, HOON-SIK

Inventor name: MENARD, ETIENNE

Inventor name: LEE, KEON JAE

Inventor name: NUZZO, RALPH G.

Inventor name: STOYKOVICH, MARK

Inventor name: AHN, JONG-HYUN

Inventor name: MEITL, MATTHEW

Inventor name: KHANG, DAHL-YOUNG

Inventor name: JIANG, HANQING

Inventor name: ZHU, ZHENGTAO

Inventor name: KO, HEUNG CHO

Inventor name: KANG, SEONG JUN

Inventor name: CHOI, WON MOOK

RIN1 Information on inventor provided before grant (corrected)

Inventor name: LEE, KEON JAE

Inventor name: JIANG, HANQING

Inventor name: KO, HEUNG CHO

Inventor name: STOYKOVICH, MARK

Inventor name: CHOI, WON MOOK

Inventor name: NUZZO, RALPH G.

Inventor name: KANG, SEONG JUN

Inventor name: AHN, JONG-HYUN

Inventor name: KHANG, DAHL-YOUNG

Inventor name: KIM, HOON-SIK

Inventor name: ROGERS, JOHN A.

Inventor name: MENARD, ETIENNE

Inventor name: MEITL, MATTHEW

Inventor name: SUN, YUGANG

Inventor name: CARLSON, ANDREW

Inventor name: HUANG, YONGGANG

Inventor name: ZHU, ZHENGTAO

RIN1 Information on inventor provided before grant (corrected)

Inventor name: MENARD, ETIENNE

Inventor name: ROGERS, JOHN A.

Inventor name: ZHU, ZHENGTAO

Inventor name: KANG, SEONG JUN

Inventor name: STOYKOVICH, MARK

Inventor name: LEE, KEON JAE

Inventor name: KIM, HOON-SIK

Inventor name: SUN, YUGANG

Inventor name: MEITL, MATTHEW

Inventor name: KO, HEUNG CHO

Inventor name: AHN, JONG-HYUN

Inventor name: KHANG, DAHL-YOUNG

Inventor name: CHOI, WON MOOK

Inventor name: HUANG, YONGGANG

Inventor name: JIANG, HANQING

Inventor name: CARLSON, ANDREW

Inventor name: NUZZO, RALPH G.

DAX Request for extension of the european patent (deleted)
RIN1 Information on inventor provided before grant (corrected)

Inventor name: KIM, HOON-SIK

Inventor name: KHANG, DAHL-YOUNG

Inventor name: MEITL, MATTHEW

Inventor name: CARLSON, ANDREW

Inventor name: ZHU, ZHENGTAO

Inventor name: KO, HEUNG CHO

Inventor name: STOYKOVICH, MARK

Inventor name: AHN, JONG-HYUN

Inventor name: LEE, KEON JAE

Inventor name: SUN, YUGANG

Inventor name: JIANG, HANQING

Inventor name: NUZZO, RALPH G.

Inventor name: MENARD, ETIENNE

Inventor name: HUANG, YONGGANG

Inventor name: KANG, SEONG JUN

Inventor name: ROGERS, JOHN A.

Inventor name: CHOI, WON MOOK

A4 Supplementary search report drawn up and despatched

Effective date: 20110406

17Q First examination report despatched

Effective date: 20120427

REG Reference to a national code

Ref country code: DE

Ref legal event code: R003

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED

18R Application refused

Effective date: 20171016