EP2095426A4 - NANOELECTRONIC STRUCTURE AND PRODUCTION METHOD THEREOF - Google Patents

NANOELECTRONIC STRUCTURE AND PRODUCTION METHOD THEREOF

Info

Publication number
EP2095426A4
EP2095426A4 EP07861100A EP07861100A EP2095426A4 EP 2095426 A4 EP2095426 A4 EP 2095426A4 EP 07861100 A EP07861100 A EP 07861100A EP 07861100 A EP07861100 A EP 07861100A EP 2095426 A4 EP2095426 A4 EP 2095426A4
Authority
EP
European Patent Office
Prior art keywords
production method
nanoelectronic structure
nanoelectronic
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07861100A
Other languages
German (de)
French (fr)
Other versions
EP2095426A2 (en
Inventor
Patrik Svensson
Jonas Ohlsson
Lars Samuelson
Truls Loewgren
Yourii Martynov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
QuNano AB
Original Assignee
QuNano AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/812,226 external-priority patent/US8049203B2/en
Application filed by QuNano AB filed Critical QuNano AB
Publication of EP2095426A2 publication Critical patent/EP2095426A2/en
Publication of EP2095426A4 publication Critical patent/EP2095426A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/279—Vapour-liquid-solid growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3462—Nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3464—Nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Led Devices (AREA)
EP07861100A 2006-12-22 2007-12-22 NANOELECTRONIC STRUCTURE AND PRODUCTION METHOD THEREOF Withdrawn EP2095426A4 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
SE0602840 2006-12-22
SE0700102 2007-01-12
US11/812,226 US8049203B2 (en) 2006-12-22 2007-06-15 Nanoelectronic structure and method of producing such
SE0702404 2007-10-26
PCT/SE2007/001171 WO2008079077A2 (en) 2006-12-22 2007-12-22 Nanoelectronic structure and method of producing such

Publications (2)

Publication Number Publication Date
EP2095426A2 EP2095426A2 (en) 2009-09-02
EP2095426A4 true EP2095426A4 (en) 2012-10-10

Family

ID=40902775

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07861100A Withdrawn EP2095426A4 (en) 2006-12-22 2007-12-22 NANOELECTRONIC STRUCTURE AND PRODUCTION METHOD THEREOF

Country Status (2)

Country Link
EP (1) EP2095426A4 (en)
WO (1) WO2008079077A2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE533090C2 (en) * 2008-07-09 2010-06-22 Qunano Ab Nanostructured LED
JP2012502466A (en) * 2008-09-04 2012-01-26 クナノ アーベー Nanostructured photodiode
WO2010110733A1 (en) 2009-03-25 2010-09-30 Glo Ab A schottky device
JP5652827B2 (en) * 2009-09-30 2015-01-14 国立大学法人北海道大学 Tunnel field effect transistor and manufacturing method thereof
JP2011211047A (en) * 2010-03-30 2011-10-20 Sharp Corp Display device, method of manufacturing display device, and method of driving display device
US9329433B2 (en) 2010-03-12 2016-05-03 Sharp Kabushiki Kaisha Light-emitting device manufacturing method, light-emitting device, lighting device, backlight, liquid-crystal panel, display device, display device manufacturing method, display device drive method and liquid-crystal display device
WO2012035243A1 (en) 2010-09-14 2012-03-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Nanowire-based optoelectronic device for light emission
WO2012066444A1 (en) * 2010-11-17 2012-05-24 International Business Machines Corporation Strained nanowire devices
KR101316375B1 (en) * 2011-08-19 2013-10-08 포항공과대학교 산학협력단 Solar cell and Method of fabricating the same
US9653286B2 (en) 2012-02-14 2017-05-16 Hexagem Ab Gallium nitride nanowire based electronics
FR2991100B1 (en) * 2012-05-25 2014-06-27 Commissariat Energie Atomique NANOFIL-BASED TRANSISTOR, PROCESS FOR PRODUCING THE TRANSISTOR, SEMICONDUCTOR COMPONENT INTEGRATING THE TRANSISTOR, COMPUTER PROGRAM, AND RECORDING MEDIUM ASSOCIATED WITH THE MANUFACTURING METHOD
CN104603952B (en) * 2012-07-06 2017-07-21 昆南诺股份有限公司 Radial Nanowire Ezaki Diode Devices and Methods
US9166106B2 (en) * 2012-10-26 2015-10-20 Glo Ab Nanowire sized opto-electronic structure and method for modifying selected portions of same
FR3011383B1 (en) * 2013-09-30 2017-05-26 Commissariat Energie Atomique METHOD FOR MANUFACTURING OPTOELECTRONIC DEVICES WITH ELECTROLUMINESCENT DIODES
CN106170868B (en) * 2014-03-28 2020-02-11 英特尔公司 Aspect Ratio Trapping (ART) for fabricating vertical semiconductor devices
WO2015147866A1 (en) * 2014-03-28 2015-10-01 Intel Corporation Selectively regrown top contact for vertical semiconductor devices
FR3098011B1 (en) * 2019-06-28 2022-07-15 Aledia PROCESS FOR MANUFACTURING MICROWIRE OR NANOWIRE

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040003839A1 (en) * 2002-07-05 2004-01-08 Curtin Lawrence F. Nano photovoltaic/solar cells
US20040048409A1 (en) * 2001-08-22 2004-03-11 Goshi Biwa Nitride semiconductor element and production method for nitride semiconductor element
US20050253138A1 (en) * 2004-04-23 2005-11-17 Choi Heon J Silicon optoelectronic device using silicon nanowire and method for preparing the same
EP1727216A2 (en) * 2005-05-24 2006-11-29 LG Electronics, Inc. Rod type light emitting device and method for fabricating the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3243303B2 (en) * 1991-10-28 2002-01-07 ゼロックス・コーポレーション Quantum confined semiconductor light emitting device and method of manufacturing the same
CA2442985C (en) * 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US7211143B2 (en) * 2002-12-09 2007-05-01 The Regents Of The University Of California Sacrificial template method of fabricating a nanotube
WO2004088755A1 (en) * 2003-04-04 2004-10-14 Startskottet 22286 Ab Nanowhiskers with pn junctions and methods of fabricating thereof
WO2006135336A1 (en) * 2005-06-16 2006-12-21 Qunano Ab Semiconductor nanowire transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040048409A1 (en) * 2001-08-22 2004-03-11 Goshi Biwa Nitride semiconductor element and production method for nitride semiconductor element
US20040003839A1 (en) * 2002-07-05 2004-01-08 Curtin Lawrence F. Nano photovoltaic/solar cells
US20050253138A1 (en) * 2004-04-23 2005-11-17 Choi Heon J Silicon optoelectronic device using silicon nanowire and method for preparing the same
EP1727216A2 (en) * 2005-05-24 2006-11-29 LG Electronics, Inc. Rod type light emitting device and method for fabricating the same

Also Published As

Publication number Publication date
WO2008079077A3 (en) 2008-08-21
EP2095426A2 (en) 2009-09-02
WO2008079077A2 (en) 2008-07-03

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