EP2308104A4 - SEMICONDUCTOR LIGHT CONVERSION CONSTRUCTION - Google Patents
SEMICONDUCTOR LIGHT CONVERSION CONSTRUCTIONInfo
- Publication number
- EP2308104A4 EP2308104A4 EP09770725.1A EP09770725A EP2308104A4 EP 2308104 A4 EP2308104 A4 EP 2308104A4 EP 09770725 A EP09770725 A EP 09770725A EP 2308104 A4 EP2308104 A4 EP 2308104A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor light
- light conversion
- conversion construction
- construction
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7590408P | 2008-06-26 | 2008-06-26 | |
| PCT/US2009/046835 WO2009158191A2 (en) | 2008-06-26 | 2009-06-10 | Semiconductor light converting construction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP2308104A2 EP2308104A2 (en) | 2011-04-13 |
| EP2308104A4 true EP2308104A4 (en) | 2014-04-30 |
Family
ID=41445203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP09770725.1A Withdrawn EP2308104A4 (en) | 2008-06-26 | 2009-06-10 | SEMICONDUCTOR LIGHT CONVERSION CONSTRUCTION |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2308104A4 (en) |
| JP (1) | JP2011526079A (en) |
| KR (1) | KR20110031953A (en) |
| CN (1) | CN102124583B (en) |
| WO (1) | WO2009158191A2 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8324000B2 (en) | 2008-06-26 | 2012-12-04 | 3M Innovative Properties Company | Method of fabricating light extractor |
| EP2308101A4 (en) | 2008-06-26 | 2014-04-30 | 3M Innovative Properties Co | CONVERSION ASSEMBLY OF A SEMICONDUCTOR LIGHT |
| EP2308103A4 (en) | 2008-06-26 | 2014-04-30 | 3M Innovative Properties Co | LIGHT CONVERSION CONSTRUCTION |
| JP2012514335A (en) | 2008-12-24 | 2012-06-21 | スリーエム イノベイティブ プロパティズ カンパニー | Wavelength converter on both sides and method for producing light generating device using the same |
| CN102318089A (en) | 2008-12-24 | 2012-01-11 | 3M创新有限公司 | Light generating device with two-sided wavelength shifter |
| CN102460741A (en) | 2009-05-05 | 2012-05-16 | 3M创新有限公司 | Re-emitting semiconductor construction with increased extraction efficiency |
| JP2012526391A (en) | 2009-05-05 | 2012-10-25 | スリーエム イノベイティブ プロパティズ カンパニー | Semiconductor devices grown on indium-containing substrates using an indium depletion mechanism. |
| KR20120015337A (en) | 2009-05-05 | 2012-02-21 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Re-emitting semiconductor carrier device and manufacturing method for use in LED |
| WO2011008476A1 (en) | 2009-06-30 | 2011-01-20 | 3M Innovative Properties Company | Cadmium-free re-emitting semiconductor construction |
| EP2449608A1 (en) | 2009-06-30 | 2012-05-09 | 3M Innovative Properties Company | Electroluminescent devices with color adjustment based on current crowding |
| EP2449856A1 (en) | 2009-06-30 | 2012-05-09 | 3M Innovative Properties Company | White light electroluminescent devices with adjustable color temperature |
| WO2013157310A1 (en) * | 2012-04-17 | 2013-10-24 | シャープ株式会社 | Light-emitting device and method for manufacturing same |
| CN110456528A (en) * | 2019-08-06 | 2019-11-15 | 桂林电子科技大学 | A Dual Waveguide Coupled Plasma Electro-Optical Modulator |
| US11362243B2 (en) * | 2019-10-09 | 2022-06-14 | Lumileds Llc | Optical coupling layer to improve output flux in LEDs |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1653519A1 (en) * | 2004-10-29 | 2006-05-03 | Mitsubishi Heavy Industries, Ltd. | Photoelectric conversion device |
| US20060124917A1 (en) * | 2004-12-09 | 2006-06-15 | 3M Innovative Properties Comapany | Adapting short-wavelength LED's for polychromatic, Broadband, or "white" emission |
| US20060186802A1 (en) * | 2005-02-24 | 2006-08-24 | Eastman Kodak Company | Oled device having improved light output |
| US20070284565A1 (en) * | 2006-06-12 | 2007-12-13 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
| WO2009075972A2 (en) * | 2007-12-10 | 2009-06-18 | 3M Innovative Properties Company | Down-converted light emitting diode with simplified light extraction |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6580740B2 (en) * | 2001-07-18 | 2003-06-17 | The Furukawa Electric Co., Ltd. | Semiconductor laser device having selective absorption qualities |
| US7016384B2 (en) * | 2002-03-14 | 2006-03-21 | Fuji Photo Film Co., Ltd. | Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak |
| CN100337337C (en) * | 2003-07-18 | 2007-09-12 | 财团法人工业技术研究院 | Omni-directional reflector and light-emitting device manufactured therefrom |
| JP4093943B2 (en) * | 2003-09-30 | 2008-06-04 | 三洋電機株式会社 | LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF |
| TWI276232B (en) * | 2004-08-20 | 2007-03-11 | Arima Optoelectronics Corp | Light emitting diode with diffraction lattice |
| JP2007005173A (en) * | 2005-06-24 | 2007-01-11 | Toshiba Matsushita Display Technology Co Ltd | Display device |
| KR20070011041A (en) * | 2005-07-19 | 2007-01-24 | 주식회사 엘지화학 | Light emitting diode device with improved light extraction efficiency and manufacturing method thereof |
-
2009
- 2009-06-10 CN CN2009801321609A patent/CN102124583B/en not_active Expired - Fee Related
- 2009-06-10 WO PCT/US2009/046835 patent/WO2009158191A2/en not_active Ceased
- 2009-06-10 KR KR1020117001361A patent/KR20110031953A/en not_active Withdrawn
- 2009-06-10 EP EP09770725.1A patent/EP2308104A4/en not_active Withdrawn
- 2009-06-10 JP JP2011516415A patent/JP2011526079A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1653519A1 (en) * | 2004-10-29 | 2006-05-03 | Mitsubishi Heavy Industries, Ltd. | Photoelectric conversion device |
| US20060124917A1 (en) * | 2004-12-09 | 2006-06-15 | 3M Innovative Properties Comapany | Adapting short-wavelength LED's for polychromatic, Broadband, or "white" emission |
| US20060186802A1 (en) * | 2005-02-24 | 2006-08-24 | Eastman Kodak Company | Oled device having improved light output |
| US20070284565A1 (en) * | 2006-06-12 | 2007-12-13 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
| WO2009075972A2 (en) * | 2007-12-10 | 2009-06-18 | 3M Innovative Properties Company | Down-converted light emitting diode with simplified light extraction |
Non-Patent Citations (1)
| Title |
|---|
| GUO S P ET AL: "Distributed Bragg reflectors for visible range applications based on (Zn,Cd,Mg)Se lattice matched to InP", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 77, no. 25, 18 December 2000 (2000-12-18), pages 4107 - 4109, XP012026930, ISSN: 0003-6951, DOI: 10.1063/1.1334650 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102124583A (en) | 2011-07-13 |
| KR20110031953A (en) | 2011-03-29 |
| WO2009158191A2 (en) | 2009-12-30 |
| JP2011526079A (en) | 2011-09-29 |
| CN102124583B (en) | 2013-06-19 |
| EP2308104A2 (en) | 2011-04-13 |
| WO2009158191A3 (en) | 2010-03-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| 17P | Request for examination filed |
Effective date: 20110125 |
|
| AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR |
|
| AX | Request for extension of the european patent |
Extension state: AL BA RS |
|
| DAX | Request for extension of the european patent (deleted) | ||
| A4 | Supplementary search report drawn up and despatched |
Effective date: 20140402 |
|
| RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 33/08 20100101ALN20140327BHEP Ipc: H01L 33/44 20100101AFI20140327BHEP Ipc: H01L 33/50 20100101ALI20140327BHEP |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
| 18W | Application withdrawn |
Effective date: 20140522 |