EP2345062A4 - METHODS OF FORMING MULTIDOPED JUNCTIONS ON A SUBSTRATE - Google Patents

METHODS OF FORMING MULTIDOPED JUNCTIONS ON A SUBSTRATE

Info

Publication number
EP2345062A4
EP2345062A4 EP08877854A EP08877854A EP2345062A4 EP 2345062 A4 EP2345062 A4 EP 2345062A4 EP 08877854 A EP08877854 A EP 08877854A EP 08877854 A EP08877854 A EP 08877854A EP 2345062 A4 EP2345062 A4 EP 2345062A4
Authority
EP
European Patent Office
Prior art keywords
multidoped
junctions
substrate
methods
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08877854A
Other languages
German (de)
French (fr)
Other versions
EP2345062A1 (en
Inventor
Sunil Shah
Malcolm Abbott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innovalight Inc
Original Assignee
Innovalight Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innovalight Inc filed Critical Innovalight Inc
Publication of EP2345062A1 publication Critical patent/EP2345062A1/en
Publication of EP2345062A4 publication Critical patent/EP2345062A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
EP08877854A 2008-10-29 2008-10-29 METHODS OF FORMING MULTIDOPED JUNCTIONS ON A SUBSTRATE Withdrawn EP2345062A4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2008/081558 WO2010050936A1 (en) 2008-10-29 2008-10-29 Methods of forming multi-doped junctions on a substrate

Publications (2)

Publication Number Publication Date
EP2345062A1 EP2345062A1 (en) 2011-07-20
EP2345062A4 true EP2345062A4 (en) 2012-06-13

Family

ID=42129093

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08877854A Withdrawn EP2345062A4 (en) 2008-10-29 2008-10-29 METHODS OF FORMING MULTIDOPED JUNCTIONS ON A SUBSTRATE

Country Status (5)

Country Link
EP (1) EP2345062A4 (en)
JP (1) JP2012507855A (en)
KR (1) KR20110089291A (en)
CN (1) CN102246275B (en)
WO (1) WO2010050936A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8853527B2 (en) 2007-02-16 2014-10-07 Nanogram Corporation Solar cell structures, photovoltaic panels and corresponding processes
US8658454B2 (en) * 2010-09-20 2014-02-25 Sunpower Corporation Method of fabricating a solar cell
JP5921088B2 (en) * 2011-05-27 2016-05-24 帝人株式会社 Unsintered silicon particle film and semiconductor silicon film, and methods for producing them
JP5253561B2 (en) * 2011-02-04 2013-07-31 帝人株式会社 Semiconductor device manufacturing method, semiconductor device, and dispersion
JP2012234994A (en) * 2011-05-02 2012-11-29 Teijin Ltd Semiconductor silicon film and semiconductor device, and method for manufacturing them
EP2701182A3 (en) 2010-12-10 2014-06-04 Teijin Limited Semiconductor laminate, semiconductor device, method for producing semiconductor laminate, and method for manufacturing semiconductor device
US8858843B2 (en) * 2010-12-14 2014-10-14 Innovalight, Inc. High fidelity doping paste and methods thereof
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
JPWO2012132758A1 (en) * 2011-03-28 2014-07-28 三洋電機株式会社 Photoelectric conversion device and method of manufacturing photoelectric conversion device
KR101890286B1 (en) * 2012-07-13 2018-08-22 엘지전자 주식회사 Manufacturing method of bi-facial solar cell
WO2014024297A1 (en) * 2012-08-09 2014-02-13 三菱電機株式会社 Solar cell manufacturing method
JP6282635B2 (en) * 2013-04-24 2018-02-21 三菱電機株式会社 Manufacturing method of solar cell
JP6379461B2 (en) * 2013-09-02 2018-08-29 日立化成株式会社 Method for manufacturing silicon substrate having p-type diffusion layer, method for manufacturing solar cell element, and solar cell element
JP6144778B2 (en) * 2013-12-13 2017-06-07 信越化学工業株式会社 Manufacturing method of solar cell
JP6125114B2 (en) * 2015-02-10 2017-05-10 三菱電機株式会社 Manufacturing method of solar cell
US9589802B1 (en) * 2015-12-22 2017-03-07 Varian Semuconductor Equipment Associates, Inc. Damage free enhancement of dopant diffusion into a substrate
CN114373808B (en) * 2021-11-26 2023-11-10 江苏科来材料科技有限公司 A high-efficiency crystalline silicon battery

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168807A (en) * 2001-09-19 2003-06-13 Sharp Corp Solar cell, method of manufacturing the same, and apparatus for manufacturing the same
US20060094189A1 (en) * 2003-01-08 2006-05-04 Thomas B. Haverstock, Haverstock & Owens Llp Nanoparticles and method for making the same
US7192873B1 (en) * 2004-11-25 2007-03-20 Samsung Electronics Co., Ltd. Method of manufacturing nano scale semiconductor device using nano particles
WO2008039757A2 (en) * 2006-09-28 2008-04-03 Innovalight, Inc. Semiconductor devices and methods from group iv nanoparticle materials

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102064102B (en) * 2004-06-08 2013-10-30 桑迪士克公司 Methods and devices for forming nanostructure monolayers and devices including such monolayers
TW201341440A (en) * 2004-06-08 2013-10-16 Sandisk Corp Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same
US7419887B1 (en) * 2004-07-26 2008-09-02 Quick Nathaniel R Laser assisted nano deposition
US7355238B2 (en) * 2004-12-06 2008-04-08 Asahi Glass Company, Limited Nonvolatile semiconductor memory device having nanoparticles for charge retention
JP4481869B2 (en) * 2005-04-26 2010-06-16 信越半導体株式会社 SOLAR CELL MANUFACTURING METHOD, SOLAR CELL, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
US7776724B2 (en) * 2006-12-07 2010-08-17 Innovalight, Inc. Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168807A (en) * 2001-09-19 2003-06-13 Sharp Corp Solar cell, method of manufacturing the same, and apparatus for manufacturing the same
US20060094189A1 (en) * 2003-01-08 2006-05-04 Thomas B. Haverstock, Haverstock & Owens Llp Nanoparticles and method for making the same
US7192873B1 (en) * 2004-11-25 2007-03-20 Samsung Electronics Co., Ltd. Method of manufacturing nano scale semiconductor device using nano particles
WO2008039757A2 (en) * 2006-09-28 2008-04-03 Innovalight, Inc. Semiconductor devices and methods from group iv nanoparticle materials

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2010050936A1 *

Also Published As

Publication number Publication date
CN102246275A (en) 2011-11-16
JP2012507855A (en) 2012-03-29
CN102246275B (en) 2014-04-30
WO2010050936A1 (en) 2010-05-06
EP2345062A1 (en) 2011-07-20
KR20110089291A (en) 2011-08-05

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