EP2345062A4 - Procédés de formation de jonctions multidopées sur un substrat - Google Patents

Procédés de formation de jonctions multidopées sur un substrat

Info

Publication number
EP2345062A4
EP2345062A4 EP08877854A EP08877854A EP2345062A4 EP 2345062 A4 EP2345062 A4 EP 2345062A4 EP 08877854 A EP08877854 A EP 08877854A EP 08877854 A EP08877854 A EP 08877854A EP 2345062 A4 EP2345062 A4 EP 2345062A4
Authority
EP
European Patent Office
Prior art keywords
multidoped
junctions
substrate
methods
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08877854A
Other languages
German (de)
English (en)
Other versions
EP2345062A1 (fr
Inventor
Sunil Shah
Malcolm Abbott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innovalight Inc
Original Assignee
Innovalight Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innovalight Inc filed Critical Innovalight Inc
Publication of EP2345062A1 publication Critical patent/EP2345062A1/fr
Publication of EP2345062A4 publication Critical patent/EP2345062A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
EP08877854A 2008-10-29 2008-10-29 Procédés de formation de jonctions multidopées sur un substrat Withdrawn EP2345062A4 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2008/081558 WO2010050936A1 (fr) 2008-10-29 2008-10-29 Procédés de formation de jonctions multidopées sur un substrat

Publications (2)

Publication Number Publication Date
EP2345062A1 EP2345062A1 (fr) 2011-07-20
EP2345062A4 true EP2345062A4 (fr) 2012-06-13

Family

ID=42129093

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08877854A Withdrawn EP2345062A4 (fr) 2008-10-29 2008-10-29 Procédés de formation de jonctions multidopées sur un substrat

Country Status (5)

Country Link
EP (1) EP2345062A4 (fr)
JP (1) JP2012507855A (fr)
KR (1) KR20110089291A (fr)
CN (1) CN102246275B (fr)
WO (1) WO2010050936A1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8853527B2 (en) 2007-02-16 2014-10-07 Nanogram Corporation Solar cell structures, photovoltaic panels and corresponding processes
US8658454B2 (en) * 2010-09-20 2014-02-25 Sunpower Corporation Method of fabricating a solar cell
JP5921088B2 (ja) * 2011-05-27 2016-05-24 帝人株式会社 未焼結シリコン粒子膜及び半導体シリコン膜、並びにそれらの製造方法
JP5253561B2 (ja) * 2011-02-04 2013-07-31 帝人株式会社 半導体デバイスの製造方法、半導体デバイス、並びに分散体
JP2012234994A (ja) * 2011-05-02 2012-11-29 Teijin Ltd 半導体シリコン膜及び半導体デバイス、並びにそれらの製造方法
EP2701182A3 (fr) 2010-12-10 2014-06-04 Teijin Limited Stratifié semi-conducteur, dispositif semi-conducteur, procédé de production de stratifié semi-conducteur et procédé de fabrication de dispositif semi-conducteur
US8858843B2 (en) * 2010-12-14 2014-10-14 Innovalight, Inc. High fidelity doping paste and methods thereof
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
JPWO2012132758A1 (ja) * 2011-03-28 2014-07-28 三洋電機株式会社 光電変換装置及び光電変換装置の製造方法
KR101890286B1 (ko) * 2012-07-13 2018-08-22 엘지전자 주식회사 양면형 태양 전지의 제조 방법
WO2014024297A1 (fr) * 2012-08-09 2014-02-13 三菱電機株式会社 Procédé de fabrication de cellule solaire
JP6282635B2 (ja) * 2013-04-24 2018-02-21 三菱電機株式会社 太陽電池の製造方法
JP6379461B2 (ja) * 2013-09-02 2018-08-29 日立化成株式会社 ｐ型拡散層を有するシリコン基板の製造方法、太陽電池素子の製造方法及び太陽電池素子
JP6144778B2 (ja) * 2013-12-13 2017-06-07 信越化学工業株式会社 太陽電池の製造方法
JP6125114B2 (ja) * 2015-02-10 2017-05-10 三菱電機株式会社 太陽電池の製造方法
US9589802B1 (en) * 2015-12-22 2017-03-07 Varian Semuconductor Equipment Associates, Inc. Damage free enhancement of dopant diffusion into a substrate
CN114373808B (zh) * 2021-11-26 2023-11-10 江苏科来材料科技有限公司 一种高效晶硅电池

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168807A (ja) * 2001-09-19 2003-06-13 Sharp Corp 太陽電池およびその製造方法およびその製造装置
US20060094189A1 (en) * 2003-01-08 2006-05-04 Thomas B. Haverstock, Haverstock & Owens Llp Nanoparticles and method for making the same
US7192873B1 (en) * 2004-11-25 2007-03-20 Samsung Electronics Co., Ltd. Method of manufacturing nano scale semiconductor device using nano particles
WO2008039757A2 (fr) * 2006-09-28 2008-04-03 Innovalight, Inc. Dispositifs à semiconducteurs et procédés à partir de matériaux de nanoparticule du groupe iv

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102064102B (zh) * 2004-06-08 2013-10-30 桑迪士克公司 形成单层纳米结构的方法和器件以及包含这种单层的器件
TW201341440A (zh) * 2004-06-08 2013-10-16 Sandisk Corp 奈米結構之沉積後包封：併入該包封體之組成物、裝置及系統
US7419887B1 (en) * 2004-07-26 2008-09-02 Quick Nathaniel R Laser assisted nano deposition
US7355238B2 (en) * 2004-12-06 2008-04-08 Asahi Glass Company, Limited Nonvolatile semiconductor memory device having nanoparticles for charge retention
JP4481869B2 (ja) * 2005-04-26 2010-06-16 信越半導体株式会社 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
US7776724B2 (en) * 2006-12-07 2010-08-17 Innovalight, Inc. Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168807A (ja) * 2001-09-19 2003-06-13 Sharp Corp 太陽電池およびその製造方法およびその製造装置
US20060094189A1 (en) * 2003-01-08 2006-05-04 Thomas B. Haverstock, Haverstock & Owens Llp Nanoparticles and method for making the same
US7192873B1 (en) * 2004-11-25 2007-03-20 Samsung Electronics Co., Ltd. Method of manufacturing nano scale semiconductor device using nano particles
WO2008039757A2 (fr) * 2006-09-28 2008-04-03 Innovalight, Inc. Dispositifs à semiconducteurs et procédés à partir de matériaux de nanoparticule du groupe iv

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2010050936A1 *

Also Published As

Publication number Publication date
CN102246275A (zh) 2011-11-16
JP2012507855A (ja) 2012-03-29
CN102246275B (zh) 2014-04-30
WO2010050936A1 (fr) 2010-05-06
EP2345062A1 (fr) 2011-07-20
KR20110089291A (ko) 2011-08-05

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