EP2412016A4 - STRUCTURE AND FABRICATION OF IDENTICAL POLARITY FIELD EFFECT TRANSISTORS HAVING DIFFERENT CONFIGURATIONS OF SOURCE / DRAIN EXTENSIONS, HALO POCKETS, AND GRID DIELECTRIC THICKNESSES - Google Patents

STRUCTURE AND FABRICATION OF IDENTICAL POLARITY FIELD EFFECT TRANSISTORS HAVING DIFFERENT CONFIGURATIONS OF SOURCE / DRAIN EXTENSIONS, HALO POCKETS, AND GRID DIELECTRIC THICKNESSES

Info

Publication number
EP2412016A4
EP2412016A4 EP10756493.2A EP10756493A EP2412016A4 EP 2412016 A4 EP2412016 A4 EP 2412016A4 EP 10756493 A EP10756493 A EP 10756493A EP 2412016 A4 EP2412016 A4 EP 2412016A4
Authority
EP
European Patent Office
Prior art keywords
fabrication
source
field effect
effect transistors
different configurations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10756493.2A
Other languages
German (de)
French (fr)
Other versions
EP2412016A1 (en
Inventor
Constantin Bulucea
William D French
Donald M Archer
Jeng-Jiun Yang
Sandeep R Bahl
D Courtney Parker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of EP2412016A1 publication Critical patent/EP2412016A1/en
Publication of EP2412016A4 publication Critical patent/EP2412016A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0191—Manufacturing their doped wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/225—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a molecular ion, e.g. decaborane
EP10756493.2A 2009-03-27 2010-03-25 STRUCTURE AND FABRICATION OF IDENTICAL POLARITY FIELD EFFECT TRANSISTORS HAVING DIFFERENT CONFIGURATIONS OF SOURCE / DRAIN EXTENSIONS, HALO POCKETS, AND GRID DIELECTRIC THICKNESSES Withdrawn EP2412016A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/382,971 US8084827B2 (en) 2009-03-27 2009-03-27 Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses
PCT/US2010/000898 WO2010110902A1 (en) 2009-03-27 2010-03-25 Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses

Publications (2)

Publication Number Publication Date
EP2412016A1 EP2412016A1 (en) 2012-02-01
EP2412016A4 true EP2412016A4 (en) 2014-03-19

Family

ID=42781346

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10756493.2A Withdrawn EP2412016A4 (en) 2009-03-27 2010-03-25 STRUCTURE AND FABRICATION OF IDENTICAL POLARITY FIELD EFFECT TRANSISTORS HAVING DIFFERENT CONFIGURATIONS OF SOURCE / DRAIN EXTENSIONS, HALO POCKETS, AND GRID DIELECTRIC THICKNESSES

Country Status (7)

Country Link
US (2) US8084827B2 (en)
EP (1) EP2412016A4 (en)
JP (1) JP2012522369A (en)
KR (1) KR20110133622A (en)
CN (1) CN102365730A (en)
TW (1) TW201101463A (en)
WO (1) WO2010110902A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8482076B2 (en) * 2009-09-16 2013-07-09 International Business Machines Corporation Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor
US20110291193A1 (en) * 2010-05-27 2011-12-01 International Business Machines Corporation High density butted junction cmos inverter, and making and layout of same
JP6043193B2 (en) * 2013-01-28 2016-12-14 株式会社東芝 Tunnel transistor
KR102180554B1 (en) 2013-12-04 2020-11-19 삼성디스플레이 주식회사 Thin film transistor and method for fabricating the same
US9324783B2 (en) * 2014-09-30 2016-04-26 Infineon Technologies Ag Soft switching semiconductor device and method for producing thereof
CN109980009B (en) * 2017-12-28 2020-11-03 无锡华润上华科技有限公司 Method for manufacturing semiconductor device and integrated semiconductor device
CN109980010B (en) * 2017-12-28 2020-10-13 无锡华润上华科技有限公司 A method of manufacturing a semiconductor device and an integrated semiconductor device
FR3099638A1 (en) * 2019-07-31 2021-02-05 Stmicroelectronics (Rousset) Sas A manufacturing method comprising defining an effective channel length of MOSFET transistors
US11455452B2 (en) * 2019-09-23 2022-09-27 Texas Instruments Incorporated Variable implant and wafer-level feed-forward for dopant dose optimization
CN111785777B (en) * 2020-06-28 2023-10-20 上海华虹宏力半导体制造有限公司 High-voltage CMOS device and manufacturing method thereof
US20260090079A1 (en) * 2024-09-23 2026-03-26 Apple Inc. Low Noise Stacked Field Effect Transistor Design

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020052083A1 (en) * 2000-10-26 2002-05-02 Xin Zhang Cost effective split-gate process that can independently optimize the low voltage(LV) and high voltage (HV) transistors to minimize reverse short channel effects
US20060170040A1 (en) * 2005-01-28 2006-08-03 Fujitsu Limited Semiconductor device, semiconductor integrated circuit device, and semiconductor device fabrication method
US20070254447A1 (en) * 2006-05-01 2007-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Decoupled pocket and LDD formation
US20080311717A1 (en) * 2005-08-29 2008-12-18 Constantin Bulucea Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications
US20090032869A1 (en) * 2007-07-30 2009-02-05 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3279662D1 (en) 1981-12-30 1989-06-01 Thomson Components Mostek Corp Triple diffused short channel device structure
EP0360036B1 (en) 1988-09-20 1994-06-01 Siemens Aktiengesellschaft Planar pn-junction having a high withstand voltage
USH986H (en) 1989-06-09 1991-11-05 International Business Machines Corporation Field effect-transistor with asymmetrical structure
US6081010A (en) 1992-10-13 2000-06-27 Intel Corporation MOS semiconductor device with self-aligned punchthrough stops and method of fabrication
US5482878A (en) 1994-04-04 1996-01-09 Motorola, Inc. Method for fabricating insulated gate field effect transistor having subthreshold swing
US5622880A (en) 1994-08-18 1997-04-22 Sun Microsystems, Inc. Method of making a low power, high performance junction transistor
US5650340A (en) 1994-08-18 1997-07-22 Sun Microsystems, Inc. Method of making asymmetric low power MOS devices
JPH0888362A (en) * 1994-09-19 1996-04-02 Sony Corp Semiconductor device and manufacturing method thereof
US5744372A (en) 1995-04-12 1998-04-28 National Semiconductor Corporation Fabrication of complementary field-effect transistors each having multi-part channel
JP3714995B2 (en) 1995-07-05 2005-11-09 シャープ株式会社 Semiconductor device
US6127700A (en) 1995-09-12 2000-10-03 National Semiconductor Corporation Field-effect transistor having local threshold-adjust doping
US5793090A (en) 1997-01-10 1998-08-11 Advanced Micro Devices, Inc. Integrated circuit having multiple LDD and/or source/drain implant steps to enhance circuit performance
JPH1167786A (en) 1997-08-25 1999-03-09 Mitsubishi Electric Corp Semiconductor device and manufacturing method thereof
US5952693A (en) 1997-09-05 1999-09-14 Advanced Micro Devices, Inc. CMOS semiconductor device comprising graded junctions with reduced junction capacitance
US6548874B1 (en) * 1999-10-27 2003-04-15 Texas Instruments Incorporated Higher voltage transistors for sub micron CMOS processes
US6548842B1 (en) 2000-03-31 2003-04-15 National Semiconductor Corporation Field-effect transistor for alleviating short-channel effects
US6566204B1 (en) 2000-03-31 2003-05-20 National Semiconductor Corporation Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistors
US7145191B1 (en) 2000-03-31 2006-12-05 National Semiconductor Corporation P-channel field-effect transistor with reduced junction capacitance
US6855985B2 (en) * 2002-09-29 2005-02-15 Advanced Analogic Technologies, Inc. Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology
JP2004221223A (en) * 2003-01-14 2004-08-05 Matsushita Electric Ind Co Ltd MIS type semiconductor device and method of manufacturing the same
US7176530B1 (en) 2004-03-17 2007-02-13 National Semiconductor Corporation Configuration and fabrication of semiconductor structure having n-channel channel-junction field-effect transistor
JP3905098B2 (en) * 2004-07-02 2007-04-18 旭化成マイクロシステム株式会社 Manufacturing method of semiconductor device
US7397084B2 (en) * 2005-04-01 2008-07-08 Semiconductor Components Industries, L.L.C. Semiconductor device having enhanced performance and method
US7419863B1 (en) 2005-08-29 2008-09-02 National Semiconductor Corporation Fabrication of semiconductor structure in which complementary field-effect transistors each have hypoabrupt body dopant distribution below at least one source/drain zone
US7642574B2 (en) 2005-08-29 2010-01-05 National Semiconductor Corporation Semiconductor architecture having field-effect transistors especially suitable for analog applications
JP4832069B2 (en) * 2005-12-06 2011-12-07 パナソニック株式会社 Semiconductor device and manufacturing method thereof
JP2009004444A (en) * 2007-06-19 2009-01-08 Panasonic Corp Semiconductor device and manufacturing method thereof
TWI426564B (en) * 2007-10-31 2014-02-11 國家半導體公司 Construction and fabrication of a semiconductor architecture with field effect transistors that is particularly suitable for analog applications
JP2008147693A (en) * 2008-01-28 2008-06-26 Fujitsu Ltd Manufacturing method of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020052083A1 (en) * 2000-10-26 2002-05-02 Xin Zhang Cost effective split-gate process that can independently optimize the low voltage(LV) and high voltage (HV) transistors to minimize reverse short channel effects
US20060170040A1 (en) * 2005-01-28 2006-08-03 Fujitsu Limited Semiconductor device, semiconductor integrated circuit device, and semiconductor device fabrication method
US20080311717A1 (en) * 2005-08-29 2008-12-18 Constantin Bulucea Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications
US20070254447A1 (en) * 2006-05-01 2007-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Decoupled pocket and LDD formation
US20090032869A1 (en) * 2007-07-30 2009-02-05 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2010110902A1 *

Also Published As

Publication number Publication date
US8377768B2 (en) 2013-02-19
US20120264263A1 (en) 2012-10-18
JP2012522369A (en) 2012-09-20
WO2010110902A1 (en) 2010-09-30
CN102365730A (en) 2012-02-29
EP2412016A1 (en) 2012-02-01
KR20110133622A (en) 2011-12-13
TW201101463A (en) 2011-01-01
US8084827B2 (en) 2011-12-27
US20100244149A1 (en) 2010-09-30

Similar Documents

Publication Publication Date Title
EP2412016A4 (en) STRUCTURE AND FABRICATION OF IDENTICAL POLARITY FIELD EFFECT TRANSISTORS HAVING DIFFERENT CONFIGURATIONS OF SOURCE / DRAIN EXTENSIONS, HALO POCKETS, AND GRID DIELECTRIC THICKNESSES
EP2412015A4 (en) FABRICATION AND STRUCTURE OF ASYMMETRIC FIELD EFFECT TRANSISTORS USING L-SPACERS
BRPI0806831A2 (en) GOTHICLE AND METHOD ACTUATOR DEVICES USING MAGNETIC BALLS.
EP2416365A4 (en) FIELD EFFECT TRANSISTOR
BR112013005408A2 (en) '' trigger and trigger manufacturing method ''
BR112013016535A2 (en) plant extracts for the treatment and prevention of infections
EP2491592A4 (en) DUAL GRID FIELD EFFECT TRANSISTOR
EP2208770A4 (en) HYDROPHOBIC AGENT AND OLEOPHOBA
EP2787929A4 (en) ORTHOPEDIC ENLARGING DEVICES HAVING RECESSED POCKETS
IL226348A0 (en) An oligosaccharide compound for the treatment of urinary tract infections
EP2472585A4 (en) FIELD EFFECT TRANSISTOR AND TUNNEL EFFECT AND METHOD OF MANUFACTURING THE SAME
EP2711964A4 (en) CONTACT MECHANISM AND ELECTROMAGNETIC SWITCH USING THE SAME
EP2503936A4 (en) MAGNETIC FIELD INTENSITY THRESHOLD ALARM
IL222748A (en) 6-noble-4,2,1-triazine-5,3-deion and herbicides
BRPI0812367A2 (en) INTEROCLUSAL DEVICES AND THEIR MANUFACTURING METHODS
EP2412025A4 (en) CONFIGURATION AND MANUFACTURING OF A SEMICONDUCTOR STRUCTURE COMPRISING AN ASYMMETRIC FIELD EFFECT TRANSISTOR WITH A SPECIFIED POCKET ALONG THE SOURCE / DRAIN AREA
BR112013007034A2 (en) "magnetic actuator system for an electric toothbrush and actuator"
EP2418683A4 (en) ISOLATED GRID FIELD EFFECT TRANSISTOR
EP2737537A4 (en) SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METAL-NITRIDE INSULATOR III
EP2754205A4 (en) OVERLAPPING AND QUINCONCE ANTENNA ARRAYS
EP2077590A4 (en) FIELD EFFECT TRANSISTOR
EP2065925A4 (en) FIELD EFFECT TRANSISTOR
EP2652790A4 (en) FIELD EFFECT TRANSISTOR AND TUNNEL EFFECT
EP2959505A4 (en) FINFET FIELD EFFECT TRANSISTORS AND FINNED INSULATION STRUCTURES
EP2389683A4 (en) METHODS OF PERFORMANCE ENHANCEMENT OF FIELD EFFECT TRANSISTORS AND FIELD EFFECT TRANSISTORS MADE THEREBY

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20111027

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20140218

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 29/51 20060101ALN20140212BHEP

Ipc: H01L 27/092 20060101ALN20140212BHEP

Ipc: H01L 27/088 20060101ALI20140212BHEP

Ipc: H01L 21/265 20060101ALI20140212BHEP

Ipc: H01L 29/08 20060101ALI20140212BHEP

Ipc: H01L 29/10 20060101ALI20140212BHEP

Ipc: H01L 21/8238 20060101ALN20140212BHEP

Ipc: H01L 21/8234 20060101AFI20140212BHEP

Ipc: H01L 29/78 20060101ALI20140212BHEP

Ipc: H01L 29/06 20060101ALN20140212BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20140610