EP2519948A4 - SYSTEMS, METHODS AND APPARATUS FOR HYBRID MEMORY - Google Patents

SYSTEMS, METHODS AND APPARATUS FOR HYBRID MEMORY

Info

Publication number
EP2519948A4
EP2519948A4 EP10841482.2A EP10841482A EP2519948A4 EP 2519948 A4 EP2519948 A4 EP 2519948A4 EP 10841482 A EP10841482 A EP 10841482A EP 2519948 A4 EP2519948 A4 EP 2519948A4
Authority
EP
European Patent Office
Prior art keywords
systems
methods
hybrid memory
hybrid
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP10841482.2A
Other languages
German (de)
French (fr)
Other versions
EP2519948A2 (en
EP2519948B1 (en
Inventor
Dave Dunning
Bryan Casper
Randy Mooney
Mozhgan Mansuri
James E Jaussi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to EP15198043.0A priority Critical patent/EP3029679B1/en
Priority to EP21181239.1A priority patent/EP3910632A1/en
Publication of EP2519948A2 publication Critical patent/EP2519948A2/en
Publication of EP2519948A4 publication Critical patent/EP2519948A4/en
Application granted granted Critical
Publication of EP2519948B1 publication Critical patent/EP2519948B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406Management or control of the refreshing or charge-regeneration cycles
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M13/00Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
    • H03M13/03Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words
    • H03M13/05Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits
    • H03M13/13Linear codes
    • H03M13/15Cyclic codes, i.e. cyclic shifts of codewords produce other codewords, e.g. codes defined by a generator polynomial, Bose-Chaudhuri-Hocquenghem [BCH] codes
    • H03M13/151Cyclic codes, i.e. cyclic shifts of codewords produce other codewords, e.g. codes defined by a generator polynomial, Bose-Chaudhuri-Hocquenghem [BCH] codes using error location or error correction polynomials
    • H03M13/152Bose-Chaudhuri-Hocquenghem [BCH] codes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M13/00Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
    • H03M13/03Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words
    • H03M13/05Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits
    • H03M13/13Linear codes
    • H03M13/15Cyclic codes, i.e. cyclic shifts of codewords produce other codewords, e.g. codes defined by a generator polynomial, Bose-Chaudhuri-Hocquenghem [BCH] codes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Algebra (AREA)
  • Pure & Applied Mathematics (AREA)
  • Probability & Statistics with Applications (AREA)
  • Computer Hardware Design (AREA)
  • Quality & Reliability (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Memory System (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Detection And Correction Of Errors (AREA)
  • Semiconductor Integrated Circuits (AREA)
EP10841482.2A 2009-12-31 2010-12-10 Systems, methods, and apparatuses for hybrid memory Active EP2519948B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP15198043.0A EP3029679B1 (en) 2009-12-31 2010-12-10 Systems, methods, and apparatuses for hybrid memory
EP21181239.1A EP3910632A1 (en) 2009-12-31 2010-12-10 Systems, methods, and apparatuses for hybrid memory

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/655,590 US8612809B2 (en) 2009-12-31 2009-12-31 Systems, methods, and apparatuses for stacked memory
PCT/US2010/059853 WO2011081846A2 (en) 2009-12-31 2010-12-10 Systems, methods, and apparatuses for hybrid memory

Related Child Applications (3)

Application Number Title Priority Date Filing Date
EP21181239.1A Division EP3910632A1 (en) 2009-12-31 2010-12-10 Systems, methods, and apparatuses for hybrid memory
EP15198043.0A Division EP3029679B1 (en) 2009-12-31 2010-12-10 Systems, methods, and apparatuses for hybrid memory
EP15198043.0A Division-Into EP3029679B1 (en) 2009-12-31 2010-12-10 Systems, methods, and apparatuses for hybrid memory

Publications (3)

Publication Number Publication Date
EP2519948A2 EP2519948A2 (en) 2012-11-07
EP2519948A4 true EP2519948A4 (en) 2014-01-08
EP2519948B1 EP2519948B1 (en) 2016-10-26

Family

ID=44188959

Family Applications (3)

Application Number Title Priority Date Filing Date
EP10841482.2A Active EP2519948B1 (en) 2009-12-31 2010-12-10 Systems, methods, and apparatuses for hybrid memory
EP15198043.0A Active EP3029679B1 (en) 2009-12-31 2010-12-10 Systems, methods, and apparatuses for hybrid memory
EP21181239.1A Pending EP3910632A1 (en) 2009-12-31 2010-12-10 Systems, methods, and apparatuses for hybrid memory

Family Applications After (2)

Application Number Title Priority Date Filing Date
EP15198043.0A Active EP3029679B1 (en) 2009-12-31 2010-12-10 Systems, methods, and apparatuses for hybrid memory
EP21181239.1A Pending EP3910632A1 (en) 2009-12-31 2010-12-10 Systems, methods, and apparatuses for hybrid memory

Country Status (8)

Country Link
US (6) US8612809B2 (en)
EP (3) EP2519948B1 (en)
JP (4) JP5676644B2 (en)
KR (1) KR101454090B1 (en)
CN (2) CN102640225B (en)
PL (1) PL3029679T3 (en)
TW (2) TWI517179B (en)
WO (1) WO2011081846A2 (en)

Families Citing this family (122)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5559507B2 (en) * 2009-10-09 2014-07-23 ピーエスフォー ルクスコ エスエイアールエル Semiconductor device and information processing system including the same
US8612809B2 (en) 2009-12-31 2013-12-17 Intel Corporation Systems, methods, and apparatuses for stacked memory
US8650446B2 (en) * 2010-03-24 2014-02-11 Apple Inc. Management of a non-volatile memory based on test quality
US8582373B2 (en) * 2010-08-31 2013-11-12 Micron Technology, Inc. Buffer die in stacks of memory dies and methods
US8191034B1 (en) * 2010-09-23 2012-05-29 Cadence Design Systems, Inc. Method and system for measuring terminal compatibility and alignment
US8612676B2 (en) 2010-12-22 2013-12-17 Intel Corporation Two-level system main memory
US8607089B2 (en) 2011-05-19 2013-12-10 Intel Corporation Interface for storage device access over memory bus
WO2013048385A1 (en) 2011-09-28 2013-04-04 Intel Corporation Maximum-likelihood decoder in a memory controller for synchronization
US9378142B2 (en) 2011-09-30 2016-06-28 Intel Corporation Apparatus and method for implementing a multi-level memory hierarchy having different operating modes
EP2761469B1 (en) 2011-09-30 2019-11-13 Intel Corporation Non-volatile random access memory (nvram) as a replacement for traditional mass storage
EP3364304B1 (en) 2011-09-30 2022-06-15 INTEL Corporation Memory channel that supports near memory and far memory access
US9378133B2 (en) 2011-09-30 2016-06-28 Intel Corporation Autonomous initialization of non-volatile random access memory in a computer system
CN103946813B (en) 2011-09-30 2017-08-25 英特尔公司 Generation based on the remote memory access signals followed the trail of using statistic
WO2013048500A1 (en) 2011-09-30 2013-04-04 Intel Corporation Apparatus and method for implementing a multi-level memory hierarchy over common memory channels
EP2761476B1 (en) 2011-09-30 2017-10-25 Intel Corporation Apparatus, method and system that stores bios in non-volatile random access memory
US9298607B2 (en) 2011-11-22 2016-03-29 Intel Corporation Access control for non-volatile random access memory across platform agents
CN104106057B (en) 2011-12-13 2018-03-30 英特尔公司 The method and system of the summary responses changed to resting state is provided with nonvolatile RAM
CN103975287B (en) 2011-12-13 2017-04-12 英特尔公司 Enhanced system sleep state support in servers using non-volatile random access memory
GB2510760B (en) 2011-12-20 2020-05-20 Intel Corp Dynamic partial power down of memory-side cache in a 2-level memory hierarchy
US9286205B2 (en) 2011-12-20 2016-03-15 Intel Corporation Apparatus and method for phase change memory drift management
CN103999067A (en) 2011-12-21 2014-08-20 英特尔公司 High performance memory structure and system featuring multiple non-volatile memories
US20130166672A1 (en) * 2011-12-22 2013-06-27 International Business Machines Corporation Physically Remote Shared Computer Memory
US9612649B2 (en) 2011-12-22 2017-04-04 Intel Corporation Method and apparatus to shutdown a memory channel
US9396118B2 (en) 2011-12-28 2016-07-19 Intel Corporation Efficient dynamic randomizing address remapping for PCM caching to improve endurance and anti-attack
WO2013101006A1 (en) * 2011-12-28 2013-07-04 Intel Corporation Generic address scrambler for memory circuit test engine
US8645777B2 (en) 2011-12-29 2014-02-04 Intel Corporation Boundary scan chain for stacked memory
US9087613B2 (en) 2012-02-29 2015-07-21 Samsung Electronics Co., Ltd. Device and method for repairing memory cell and memory system including the device
TWI602181B (en) * 2012-02-29 2017-10-11 三星電子股份有限公司 Memory system and method for operating test device to transmit fail address to memory device
KR102076584B1 (en) * 2012-10-22 2020-04-07 삼성전자주식회사 Device and method of repairing memory cell and memory system including the same
US9953725B2 (en) 2012-02-29 2018-04-24 Samsung Electronics Co., Ltd. Semiconductor memory devices and methods of operating the same
US8587340B2 (en) * 2012-03-27 2013-11-19 Micron Technology, Inc. Apparatuses including scalable drivers and methods
CN104205234B (en) 2012-03-30 2017-07-11 英特尔公司 Generic data scrambler for memory circuit test engine
JP5980556B2 (en) * 2012-04-27 2016-08-31 ルネサスエレクトロニクス株式会社 Semiconductor device
US9252996B2 (en) 2012-06-21 2016-02-02 Micron Technology, Inc. Apparatuses and methods to change information values
US10303618B2 (en) * 2012-09-25 2019-05-28 International Business Machines Corporation Power savings via dynamic page type selection
US8830716B2 (en) * 2012-09-29 2014-09-09 Intel Corporation Intelligent far memory bandwith scaling
US9298395B2 (en) * 2012-10-22 2016-03-29 Globalfoundries Inc. Memory system connector
CN104508644B (en) 2012-10-30 2017-12-08 慧与发展有限责任合伙企业 Intelligence memory buffer
US9354875B2 (en) * 2012-12-27 2016-05-31 Intel Corporation Enhanced loop streaming detector to drive logic optimization
US20140189227A1 (en) * 2012-12-28 2014-07-03 Samsung Electronics Co., Ltd. Memory device and a memory module having the same
KR102029682B1 (en) 2013-03-15 2019-10-08 삼성전자주식회사 Semiconductor device and semiconductor package
US9679615B2 (en) 2013-03-15 2017-06-13 Micron Technology, Inc. Flexible memory system with a controller and a stack of memory
US11074169B2 (en) * 2013-07-03 2021-07-27 Micron Technology, Inc. Programmed memory controlled data movement and timing within a main memory device
US9338918B2 (en) 2013-07-10 2016-05-10 Samsung Electronics Co., Ltd. Socket interposer and computer system using the socket interposer
US9147438B2 (en) 2013-10-23 2015-09-29 Qualcomm Incorporated Monolithic three dimensional (3D) integrated circuits (ICs) (3DICs) with vertical memory components, related systems and methods
US9910484B2 (en) * 2013-11-26 2018-03-06 Intel Corporation Voltage regulator training
JP2015141725A (en) * 2014-01-28 2015-08-03 マイクロン テクノロジー, インク. Semiconductor device and information processing system including the same
US9237670B2 (en) 2014-02-26 2016-01-12 Samsung Electronics Co., Ltd. Socket interposer and computer system using the socket
KR102192539B1 (en) * 2014-05-21 2020-12-18 삼성전자주식회사 Semiconductor Device and program method of the same
US10204047B2 (en) 2015-03-27 2019-02-12 Intel Corporation Memory controller for multi-level system memory with coherency unit
KR102296738B1 (en) * 2015-06-01 2021-09-01 삼성전자 주식회사 Semiconductor memory device, memory system including the same, and method of error correction of the same
KR102290020B1 (en) * 2015-06-05 2021-08-19 삼성전자주식회사 Semiconductor memory device providing analiysis and relief of soft data fail in stacked chips
US10073659B2 (en) 2015-06-26 2018-09-11 Intel Corporation Power management circuit with per activity weighting and multiple throttle down thresholds
US10387259B2 (en) 2015-06-26 2019-08-20 Intel Corporation Instant restart in non volatile system memory computing systems with embedded programmable data checking
US20170060434A1 (en) * 2015-08-27 2017-03-02 Samsung Electronics Co., Ltd. Transaction-based hybrid memory module
US10740116B2 (en) * 2015-09-01 2020-08-11 International Business Machines Corporation Three-dimensional chip-based regular expression scanner
US10108549B2 (en) 2015-09-23 2018-10-23 Intel Corporation Method and apparatus for pre-fetching data in a system having a multi-level system memory
US10261901B2 (en) 2015-09-25 2019-04-16 Intel Corporation Method and apparatus for unneeded block prediction in a computing system having a last level cache and a multi-level system memory
US10185501B2 (en) 2015-09-25 2019-01-22 Intel Corporation Method and apparatus for pinning memory pages in a multi-level system memory
US10678719B2 (en) 2015-10-01 2020-06-09 Rambus Inc. Memory system with cached memory module operations
US9792224B2 (en) 2015-10-23 2017-10-17 Intel Corporation Reducing latency by persisting data relationships in relation to corresponding data in persistent memory
US10033411B2 (en) 2015-11-20 2018-07-24 Intel Corporation Adjustable error protection for stored data
US10095618B2 (en) 2015-11-25 2018-10-09 Intel Corporation Memory card with volatile and non volatile memory space having multiple usage model configurations
US10275160B2 (en) 2015-12-21 2019-04-30 Intel Corporation Method and apparatus to enable individual non volatile memory express (NVME) input/output (IO) Queues on differing network addresses of an NVME controller
US9747041B2 (en) 2015-12-23 2017-08-29 Intel Corporation Apparatus and method for a non-power-of-2 size cache in a first level memory device to cache data present in a second level memory device
CN109684653B (en) * 2017-10-19 2023-12-22 成都海存艾匹科技有限公司 Programmable gate array package containing programmable computing units
US10007606B2 (en) 2016-03-30 2018-06-26 Intel Corporation Implementation of reserved cache slots in computing system having inclusive/non inclusive tracking and two level system memory
US10185619B2 (en) 2016-03-31 2019-01-22 Intel Corporation Handling of error prone cache line slots of memory side cache of multi-level system memory
US10073787B2 (en) * 2016-04-18 2018-09-11 Via Alliance Semiconductor Co., Ltd. Dynamic powering of cache memory by ways within multiple set groups based on utilization trends
KR102533236B1 (en) 2016-06-20 2023-05-17 삼성전자주식회사 Memory device with improved latency and operating methof thereof
EP4145447A1 (en) 2016-06-27 2023-03-08 Apple Inc. Memory system having combined high density, low bandwidth and low density, high bandwidth memories
US10120806B2 (en) 2016-06-27 2018-11-06 Intel Corporation Multi-level system memory with near memory scrubbing based on predicted far memory idle time
KR102612003B1 (en) 2016-07-11 2023-12-08 삼성전자주식회사 Solid state drive device and storage system having the same
US10241906B1 (en) * 2016-07-30 2019-03-26 EMC IP Holding Company LLC Memory subsystem to augment physical memory of a computing system
US10387303B2 (en) * 2016-08-16 2019-08-20 Western Digital Technologies, Inc. Non-volatile storage system with compute engine to accelerate big data applications
US10200376B2 (en) 2016-08-24 2019-02-05 Intel Corporation Computer product, method, and system to dynamically provide discovery services for host nodes of target systems and storage resources in a network
US10176116B2 (en) 2016-09-28 2019-01-08 Intel Corporation Computer product, method, and system to provide discovery services to discover target storage resources and register a configuration of virtual target storage resources mapping to the target storage resources and an access control list of host nodes allowed to access the virtual target storage resources
US9818457B1 (en) 2016-09-30 2017-11-14 Intel Corporation Extended platform with additional memory module slots per CPU socket
US10216657B2 (en) 2016-09-30 2019-02-26 Intel Corporation Extended platform with additional memory module slots per CPU socket and configured for increased performance
US10915453B2 (en) 2016-12-29 2021-02-09 Intel Corporation Multi level system memory having different caching structures and memory controller that supports concurrent look-up into the different caching structures
US10445261B2 (en) 2016-12-30 2019-10-15 Intel Corporation System memory having point-to-point link that transports compressed traffic
US10318381B2 (en) * 2017-03-29 2019-06-11 Micron Technology, Inc. Selective error rate information for multidimensional memory
US10185652B2 (en) 2017-05-26 2019-01-22 Micron Technology, Inc. Stack access control for memory device
JP6866785B2 (en) * 2017-06-29 2021-04-28 富士通株式会社 Processor and memory access method
US10304814B2 (en) 2017-06-30 2019-05-28 Intel Corporation I/O layout footprint for multiple 1LM/2LM configurations
KR102395463B1 (en) * 2017-09-27 2022-05-09 삼성전자주식회사 Stacked memory device, system including the same and associated method
US11188467B2 (en) 2017-09-28 2021-11-30 Intel Corporation Multi-level system memory with near memory capable of storing compressed cache lines
CN111433749B (en) 2017-10-12 2023-12-08 拉姆伯斯公司 Non-volatile physical memory with DRAM cache
US10269445B1 (en) * 2017-10-22 2019-04-23 Nanya Technology Corporation Memory device and operating method thereof
US10297304B1 (en) * 2017-11-12 2019-05-21 Nanya Technology Corporation Memory device and operating method thereof
US10860244B2 (en) 2017-12-26 2020-12-08 Intel Corporation Method and apparatus for multi-level memory early page demotion
US10446200B2 (en) * 2018-03-19 2019-10-15 Micron Technology, Inc. Memory device with configurable input/output interface
US11099995B2 (en) 2018-03-28 2021-08-24 Intel Corporation Techniques for prefetching data to a first level of memory of a hierarchical arrangement of memory
KR102512754B1 (en) 2018-03-30 2023-03-23 삼성전자주식회사 Memory device sampling data using control signal transmitted through tsv
CN109472099A (en) * 2018-11-19 2019-03-15 郑州云海信息技术有限公司 A printed circuit board of a server and a manufacturing method thereof
KR102833322B1 (en) * 2018-12-27 2025-07-10 삼성전자주식회사 A three-dimensional stacked memory device and operating method for the same
US10606775B1 (en) * 2018-12-28 2020-03-31 Micron Technology, Inc. Computing tile
US11157374B2 (en) * 2018-12-28 2021-10-26 Intel Corporation Technologies for efficient reliable compute operations for mission critical applications
US10978426B2 (en) * 2018-12-31 2021-04-13 Micron Technology, Inc. Semiconductor packages with pass-through clock traces and associated systems and methods
US11055228B2 (en) 2019-01-31 2021-07-06 Intel Corporation Caching bypass mechanism for a multi-level memory
KR20210131392A (en) * 2019-02-22 2021-11-02 마이크론 테크놀로지, 인크. Memory device interfaces and methods
US11139270B2 (en) 2019-03-18 2021-10-05 Kepler Computing Inc. Artificial intelligence processor with three-dimensional stacked memory
US11836102B1 (en) 2019-03-20 2023-12-05 Kepler Computing Inc. Low latency and high bandwidth artificial intelligence processor
KR102679095B1 (en) 2019-05-30 2024-07-01 삼성전자주식회사 Semiconductor packages
US11844223B1 (en) 2019-05-31 2023-12-12 Kepler Computing Inc. Ferroelectric memory chiplet as unified memory in a multi-dimensional packaging
US12079475B1 (en) 2019-05-31 2024-09-03 Kepler Computing Inc. Ferroelectric memory chiplet in a multi-dimensional packaging
US12086410B1 (en) 2019-05-31 2024-09-10 Kepler Computing Inc. Ferroelectric memory chiplet in a multi-dimensional packaging with I/O switch embedded in a substrate or interposer
US11152343B1 (en) 2019-05-31 2021-10-19 Kepler Computing, Inc. 3D integrated ultra high-bandwidth multi-stacked memory
US11144228B2 (en) * 2019-07-11 2021-10-12 Micron Technology, Inc. Circuit partitioning for a memory device
CN110968529A (en) * 2019-11-28 2020-04-07 深圳忆联信息系统有限公司 Method and device for realizing non-cache solid state disk, computer equipment and storage medium
WO2021133826A1 (en) * 2019-12-27 2021-07-01 Micron Technology, Inc. Neuromorphic memory device and method
EP4085458A4 (en) 2019-12-30 2023-05-31 Micron Technology, Inc. Memory device interface and method
US11538508B2 (en) 2019-12-31 2022-12-27 Micron Technology, Inc. Memory module multiple port buffer techniques
US11410737B2 (en) 2020-01-10 2022-08-09 Micron Technology, Inc. Power regulation for memory systems
KR102767455B1 (en) 2020-01-20 2025-02-14 삼성전자주식회사 Semiconductor package with barrier layer
US11954040B2 (en) * 2020-06-15 2024-04-09 Arm Limited Cache memory architecture
US11664057B2 (en) 2020-07-14 2023-05-30 Micron Technology, Inc. Multiplexed memory device interface and method
US12340863B2 (en) * 2021-07-09 2025-06-24 Intel Corporation Stacked memory chip solution with reduced package inputs/outputs (I/Os)
US11791233B1 (en) 2021-08-06 2023-10-17 Kepler Computing Inc. Ferroelectric or paraelectric memory and logic chiplet with thermal management in a multi-dimensional packaging
KR102583916B1 (en) 2021-10-26 2023-09-26 연세대학교 산학협력단 Scan correlation-aware scan cluster reordering method and apparatus for low-power testing
US12525563B2 (en) 2022-06-30 2026-01-13 Intel Corporation Microelectronic assemblies including stacked dies coupled by a through dielectric via
US12561205B2 (en) 2023-12-21 2026-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Bit error detection in a compute-in-memory system, method of operating same, and method of manufacturing same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060233012A1 (en) * 2005-03-30 2006-10-19 Elpida Memory, Inc. Semiconductor storage device having a plurality of stacked memory chips
US20070047284A1 (en) * 2005-08-30 2007-03-01 Micron Technology, Inc. Self-identifying stacked die semiconductor components
US20070067554A1 (en) * 2005-08-04 2007-03-22 Joel Henry Hinrichs Serially interfaced random access memory
US20090103345A1 (en) * 2007-10-23 2009-04-23 Mclaren Moray Three-dimensional memory module architectures
US7579683B1 (en) * 2004-06-29 2009-08-25 National Semiconductor Corporation Memory interface optimized for stacked configurations
US20090237970A1 (en) * 2008-03-19 2009-09-24 Samsung Electronics Co., Ltd. Process variation compensated multi-chip memory package
US20090300444A1 (en) * 2008-06-03 2009-12-03 Micron Technology, Inc. Method and apparatus for testing high capacity/high bandwidth memory devices

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3273119A (en) * 1961-08-21 1966-09-13 Bell Telephone Labor Inc Digital error correcting systems
JPS6465650A (en) * 1987-09-04 1989-03-10 Hitachi Ltd Error detecting device for storage device
JPH0420504Y2 (en) 1987-10-19 1992-05-11
EP1031992B1 (en) * 1989-04-13 2006-06-21 SanDisk Corporation Flash EEPROM system
JPH02302856A (en) 1989-05-18 1990-12-14 Nec Field Service Ltd Cache memory degenerating system
JPH03273673A (en) * 1990-03-23 1991-12-04 Matsushita Electron Corp Semiconductor device
US5502667A (en) * 1993-09-13 1996-03-26 International Business Machines Corporation Integrated multichip memory module structure
US5568437A (en) * 1995-06-20 1996-10-22 Vlsi Technology, Inc. Built-in self test for integrated circuits having read/write memory
KR100313514B1 (en) * 1999-05-11 2001-11-17 김영환 Hybrid memory device
JP3799197B2 (en) 1999-08-26 2006-07-19 株式会社東芝 Semiconductor memory device
US7266634B2 (en) * 2000-01-05 2007-09-04 Rambus Inc. Configurable width buffered module having flyby elements
US20050066968A1 (en) * 2000-08-01 2005-03-31 Shofner Frederick M. Generation, delivery, measurement and control of aerosol boli for diagnostics and treatments of the respiratory/pulmonary tract of a patient
JP4497683B2 (en) * 2000-09-11 2010-07-07 ローム株式会社 Integrated circuit device
US6483764B2 (en) * 2001-01-16 2002-11-19 International Business Machines Corporation Dynamic DRAM refresh rate adjustment based on cell leakage monitoring
US6373758B1 (en) * 2001-02-23 2002-04-16 Hewlett-Packard Company System and method of operating a programmable column fail counter for redundancy allocation
JP4262912B2 (en) * 2001-10-16 2009-05-13 Necエレクトロニクス株式会社 Semiconductor memory device
TW556961U (en) * 2002-12-31 2003-10-01 Advanced Semiconductor Eng Multi-chip stack flip-chip package
JP4137757B2 (en) * 2003-10-01 2008-08-20 株式会社日立製作所 Network converter and information processing system
JP4272968B2 (en) * 2003-10-16 2009-06-03 エルピーダメモリ株式会社 Semiconductor device and semiconductor chip control method
JP3896112B2 (en) * 2003-12-25 2007-03-22 エルピーダメモリ株式会社 Semiconductor integrated circuit device
US7085152B2 (en) 2003-12-29 2006-08-01 Intel Corporation Memory system segmented power supply and control
US7577859B2 (en) * 2004-02-20 2009-08-18 International Business Machines Corporation System and method of controlling power consumption in an electronic system by applying a uniquely determined minimum operating voltage to an integrated circuit rather than a predetermined nominal voltage selected for a family of integrated circuits
JP4569182B2 (en) * 2004-03-19 2010-10-27 ソニー株式会社 Semiconductor device
US7557941B2 (en) * 2004-05-27 2009-07-07 Silverbrook Research Pty Ltd Use of variant and base keys with three or more entities
US7451282B2 (en) * 2005-03-09 2008-11-11 Dolphin Interconnect Solutions North America Inc. System and method for storing a sequential data stream
JP4216825B2 (en) * 2005-03-22 2009-01-28 株式会社日立製作所 Semiconductor package
JP4401319B2 (en) * 2005-04-07 2010-01-20 株式会社日立製作所 DRAM stacked package and DRAM stacked package test and relief method
US7464225B2 (en) * 2005-09-26 2008-12-09 Rambus Inc. Memory module including a plurality of integrated circuit memory devices and a plurality of buffer devices in a matrix topology
JP2007273072A (en) * 2006-03-09 2007-10-18 Matsushita Electric Ind Co Ltd Semiconductor memory device and semiconductor device
JP2007280562A (en) * 2006-04-11 2007-10-25 Sharp Corp Refresh control device
US7716411B2 (en) * 2006-06-07 2010-05-11 Microsoft Corporation Hybrid memory device with single interface
JP2008140220A (en) * 2006-12-04 2008-06-19 Nec Corp Semiconductor device
US20080136002A1 (en) * 2006-12-07 2008-06-12 Advanced Chip Engineering Technology Inc. Multi-chips package and method of forming the same
WO2008076790A2 (en) * 2006-12-14 2008-06-26 Rambus Inc. Multi-die memory device
US7672178B2 (en) * 2006-12-29 2010-03-02 Intel Corporation Dynamic adaptive read return of DRAM data
US20090006757A1 (en) * 2007-06-29 2009-01-01 Abhishek Singhal Hierarchical cache tag architecture
US7813210B2 (en) * 2007-08-16 2010-10-12 Unity Semiconductor Corporation Multiple-type memory
US7623365B2 (en) * 2007-08-29 2009-11-24 Micron Technology, Inc. Memory device interface methods, apparatus, and systems
WO2009051917A1 (en) * 2007-10-15 2009-04-23 Joseph Schweiray Lee Providing error correction to unwritten pages and for identifying unwritten pages in flash memory
US7383475B1 (en) * 2007-10-29 2008-06-03 International Business Machines Corporation Design structure for memory array repair where repair logic cannot operate at same operating condition as array
JP2009116978A (en) * 2007-11-08 2009-05-28 Nec Computertechno Ltd Semiconductor storage device
US20090282308A1 (en) * 2008-05-09 2009-11-12 Jan Gutsche Memory Cell Arrangement and Method for Reading State Information From a Memory Cell Bypassing an Error Detection Circuit
US8060719B2 (en) * 2008-05-28 2011-11-15 Micron Technology, Inc. Hybrid memory management
US8283771B2 (en) * 2008-06-30 2012-10-09 Intel Corporation Multi-die integrated circuit device and method
JP2010021306A (en) * 2008-07-10 2010-01-28 Hitachi Ltd Semiconductor device
US7929368B2 (en) * 2008-12-30 2011-04-19 Micron Technology, Inc. Variable memory refresh devices and methods
US9105323B2 (en) * 2009-01-23 2015-08-11 Micron Technology, Inc. Memory device power managers and methods
US8018752B2 (en) * 2009-03-23 2011-09-13 Micron Technology, Inc. Configurable bandwidth memory devices and methods
US8612809B2 (en) 2009-12-31 2013-12-17 Intel Corporation Systems, methods, and apparatuses for stacked memory

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7579683B1 (en) * 2004-06-29 2009-08-25 National Semiconductor Corporation Memory interface optimized for stacked configurations
US20060233012A1 (en) * 2005-03-30 2006-10-19 Elpida Memory, Inc. Semiconductor storage device having a plurality of stacked memory chips
US20070067554A1 (en) * 2005-08-04 2007-03-22 Joel Henry Hinrichs Serially interfaced random access memory
US20070047284A1 (en) * 2005-08-30 2007-03-01 Micron Technology, Inc. Self-identifying stacked die semiconductor components
US20090103345A1 (en) * 2007-10-23 2009-04-23 Mclaren Moray Three-dimensional memory module architectures
US20090237970A1 (en) * 2008-03-19 2009-09-24 Samsung Electronics Co., Ltd. Process variation compensated multi-chip memory package
US20090300444A1 (en) * 2008-06-03 2009-12-03 Micron Technology, Inc. Method and apparatus for testing high capacity/high bandwidth memory devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2011081846A2 *

Also Published As

Publication number Publication date
CN104575568A (en) 2015-04-29
US10956268B2 (en) 2021-03-23
JP2015111425A (en) 2015-06-18
CN102640225B (en) 2015-01-28
US20180232275A1 (en) 2018-08-16
TWI517179B (en) 2016-01-11
US20190354437A1 (en) 2019-11-21
US11003534B2 (en) 2021-05-11
TW201604893A (en) 2016-02-01
EP3029679B1 (en) 2025-04-30
WO2011081846A2 (en) 2011-07-07
US20200233746A1 (en) 2020-07-23
US20120284436A1 (en) 2012-11-08
US8612809B2 (en) 2013-12-17
EP3910632A1 (en) 2021-11-17
WO2011081846A3 (en) 2011-12-15
JP2016027498A (en) 2016-02-18
CN102640225A (en) 2012-08-15
CN104575568B (en) 2018-10-26
KR20120097389A (en) 2012-09-03
JP2013516020A (en) 2013-05-09
JP5676644B2 (en) 2015-02-25
TW201135748A (en) 2011-10-16
JP5869097B2 (en) 2016-02-24
PL3029679T3 (en) 2025-10-20
KR101454090B1 (en) 2014-10-22
US20150161005A1 (en) 2015-06-11
US8984189B2 (en) 2015-03-17
JP6339280B2 (en) 2018-06-06
TWI587315B (en) 2017-06-11
EP2519948A2 (en) 2012-11-07
US9886343B2 (en) 2018-02-06
EP2519948B1 (en) 2016-10-26
JP2017224382A (en) 2017-12-21
EP3029679A1 (en) 2016-06-08
US20110161748A1 (en) 2011-06-30
US10621043B2 (en) 2020-04-14

Similar Documents

Publication Publication Date Title
EP2609494A4 (en) CIRCUITS, METHODS AND SYSTEMS FOR DETECTING MUTUAL CAPACITY
EP2396790A4 (en) SYSTEMS AND METHODS FOR ADVANCED MEMORY READING
EP2245541A4 (en) SYSTEMS AND METHODS FOR MEMORY EXTENSION
EP2355699A4 (en) DEVICES, APPARATUSES, MEDICAL SYSTEMS, AND METHODS THEREOF
EP2751809A4 (en) METHODS AND APPARATUSES FOR REFRESHING MEMORY
EP2652623A4 (en) APPARATUS, SYSTEM AND METHOD FOR AUTOMATIC VALIDATION MEMORY
EP2697734A4 (en) SYSTEMS AND METHODS FOR HYDRAULIC FRACTURE CHARACTERIZATION USING MICROSISMIC EVENT DATA
EP2346983A4 (en) APPARATUSES, SYSTEMS AND METHODS FOR COLLECTION TUBES
EP2391957A4 (en) COLLABORATIVE NAVIGATION AND RELATED METHODS AND SYSTEMS
EP2700200A4 (en) METHODS AND SYSTEMS FOR DATA TRANSMISSION
EP2575603A4 (en) SYSTEMS AND METHODS FOR PORTABLE MEDICAL SENSORS PLACED IN NETWORKS
EP2225649A4 (en) MEMORY SYSTEM
EP2837158A4 (en) SYSTEMS AND METHODS FOR STRUCTURED AND EVOLVING DATA DISTRIBUTION
EP2891108A4 (en) SYSTEM AND METHODS FOR DATA VERIFICATION AND PROTECTION AGAINST REVERSE
EP2248024A4 (en) MEMORY SYSTEM
EP2315914A4 (en) METHODS AND APPARATUSES FOR WELL FORMATION
EP2676136A4 (en) DEVICES, SYSTEMS AND METHODS FOR ASSESSING HEMOSTASE
EP2211749A4 (en) METHODS, DEVICES AND SYSTEMS USEFUL FOR TESTING
EP2615969A4 (en) SYSTEMS AND METHODS FOR CALCULATING ACTIVATION CARDS
EP2867848A4 (en) SYSTEMS AND METHODS FOR MOBILE MUSIC
EP2842077A4 (en) SYSTEMS, METHODS, AND MEDIA FOR PROVIDING INTERACTIVE REFOCALIZATION IN IMAGES
EP2898739A4 (en) METHODS, TERMINALS AND SYSTEMS FOR FACILITATING DATA SHARING
EP2474027A4 (en) METROLOGY SYSTEMS AND METHODS
EP2106273A4 (en) SYSTEMS AND METHODS FOR OPERATIVE STIMULATION
EP2901268A4 (en) METHODS AND SYSTEMS FOR EXECUTING READING

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20120328

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20131206

RIC1 Information provided on ipc code assigned before grant

Ipc: G11C 5/02 20060101AFI20131202BHEP

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

INTG Intention to grant announced

Effective date: 20160621

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 840530

Country of ref document: AT

Kind code of ref document: T

Effective date: 20161115

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602010037542

Country of ref document: DE

REG Reference to a national code

Ref country code: NL

Ref legal event code: FP

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 840530

Country of ref document: AT

Kind code of ref document: T

Effective date: 20161026

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170127

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170126

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170227

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

Ref country code: BE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170226

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602010037542

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170126

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20170831

26N No opposition filed

Effective date: 20170727

REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20161210

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20170102

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20161231

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20161231

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20161210

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20101210

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20161210

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20161026

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230518

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 20251126

Year of fee payment: 16

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20251119

Year of fee payment: 16

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20251120

Year of fee payment: 16