EP2523228A4 - LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - Google Patents

LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME

Info

Publication number
EP2523228A4
EP2523228A4 EP11731878.2A EP11731878A EP2523228A4 EP 2523228 A4 EP2523228 A4 EP 2523228A4 EP 11731878 A EP11731878 A EP 11731878A EP 2523228 A4 EP2523228 A4 EP 2523228A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
light emitting
same
emitting diode
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP11731878.2A
Other languages
German (de)
French (fr)
Other versions
EP2523228A2 (en
EP2523228B1 (en
Inventor
Kwang Joong Kim
Chang Suk Han
Seung Kyu Choi
Ki Bum Nam
Nam Yoon Kim
Kyung Hae Kim
Ju Hyung Yoon
Kyung Hee Ye
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
Original Assignee
Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=45564153&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP2523228(A4) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from KR1020100052860A external-priority patent/KR20110133239A/en
Priority claimed from KR1020100052861A external-priority patent/KR101648948B1/en
Priority claimed from KR1020100113666A external-priority patent/KR101712549B1/en
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of EP2523228A2 publication Critical patent/EP2523228A2/en
Publication of EP2523228A4 publication Critical patent/EP2523228A4/en
Application granted granted Critical
Publication of EP2523228B1 publication Critical patent/EP2523228B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
EP11731878.2A 2010-01-05 2011-01-03 Light emitting diode Active EP2523228B1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR20100000559 2010-01-05
KR1020100052860A KR20110133239A (en) 2010-06-04 2010-06-04 Reliable Light Emitting Diode
KR1020100052861A KR101648948B1 (en) 2010-06-04 2010-06-04 Reliable light emitting diode and method of fabricating the same
KR1020100113666A KR101712549B1 (en) 2010-01-05 2010-11-16 Light emitting diode having spacer layer
PCT/KR2011/000002 WO2011083940A2 (en) 2010-01-05 2011-01-03 Light-emitting diode and method for manufacturing same

Publications (3)

Publication Number Publication Date
EP2523228A2 EP2523228A2 (en) 2012-11-14
EP2523228A4 true EP2523228A4 (en) 2014-07-02
EP2523228B1 EP2523228B1 (en) 2017-04-26

Family

ID=45564153

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11731878.2A Active EP2523228B1 (en) 2010-01-05 2011-01-03 Light emitting diode

Country Status (5)

Country Link
US (4) US8357924B2 (en)
EP (1) EP2523228B1 (en)
JP (1) JP5709899B2 (en)
CN (1) CN102782883B (en)
WO (1) WO2011083940A2 (en)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110039313A (en) 2008-07-07 2011-04-15 글로 에이비 Nanostructure LED
DE102009060747B4 (en) 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung semiconductor chip
WO2011083940A2 (en) 2010-01-05 2011-07-14 서울옵토디바이스주식회사 Light-emitting diode and method for manufacturing same
JP5885942B2 (en) * 2011-05-30 2016-03-16 シャープ株式会社 Nitride semiconductor light emitting device and manufacturing method thereof
US8686397B2 (en) * 2011-06-10 2014-04-01 The Regents Of The University Of California Low droop light emitting diode structure on gallium nitride semipolar substrates
US9343641B2 (en) * 2011-08-02 2016-05-17 Manutius Ip, Inc. Non-reactive barrier metal for eutectic bonding process
US8669585B1 (en) * 2011-09-03 2014-03-11 Toshiba Techno Center Inc. LED that has bounding silicon-doped regions on either side of a strain release layer
WO2013049817A1 (en) * 2011-09-30 2013-04-04 The Regents Of The University Of California Opto-electrical devices with reduced efficiency droop and forward voltage
EP2626917B1 (en) * 2012-02-10 2017-09-27 IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik A CMOS-compatible germanium tunable Laser
US10164150B2 (en) 2012-03-29 2018-12-25 Seoul Viosys Co., Ltd. Near UV light emitting device
US10177273B2 (en) * 2012-03-29 2019-01-08 Seoul Viosys Co., Ltd. UV light emitting device
KR101997020B1 (en) * 2012-03-29 2019-07-08 서울바이오시스 주식회사 Near uv light emitting device
JP5881560B2 (en) * 2012-08-30 2016-03-09 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
KR101936305B1 (en) * 2012-09-24 2019-01-08 엘지이노텍 주식회사 Light emitting device
TWI524551B (en) 2012-11-19 2016-03-01 新世紀光電股份有限公司 Nitride semiconductor structure and semiconductor light emitting device
TWI535055B (en) 2012-11-19 2016-05-21 新世紀光電股份有限公司 Nitride semiconductor structure and semiconductor light emitting device
US10153394B2 (en) 2012-11-19 2018-12-11 Genesis Photonics Inc. Semiconductor structure
KR20140074516A (en) * 2012-12-10 2014-06-18 서울바이오시스 주식회사 Method of grawing gallium nitride based semiconductor layers and method of fabricating light emitting device therewith
US20160005919A1 (en) * 2013-02-05 2016-01-07 Tokuyama Corporation Nitride semiconductor light emitting device
JP2014183285A (en) * 2013-03-21 2014-09-29 Stanley Electric Co Ltd Light-emitting element
KR102035292B1 (en) * 2013-04-11 2019-10-22 서울바이오시스 주식회사 Light emitting diode having improved esd characteristics
KR102191213B1 (en) * 2013-04-12 2020-12-15 서울바이오시스 주식회사 Uv light emitting device
CN103337572A (en) * 2013-06-28 2013-10-02 武汉迪源光电科技有限公司 GaN-based LED extension structure and developing method thereof
CN103560190B (en) * 2013-11-15 2016-03-02 湘能华磊光电股份有限公司 The epitaxial growth method that block electrons is leaked and defect extends and structure thereof
US10109767B2 (en) * 2014-04-25 2018-10-23 Seoul Viosys Co., Ltd. Method of growing n-type nitride semiconductor, light emitting diode and method of fabricating the same
WO2015181648A1 (en) 2014-05-27 2015-12-03 The Silanna Group Pty Limited An optoelectronic device
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
WO2015181656A1 (en) 2014-05-27 2015-12-03 The Silanna Group Pty Limited Electronic devices comprising n-type and p-type superlattices
KR102318317B1 (en) 2014-05-27 2021-10-28 실라나 유브이 테크놀로지스 피티이 리미티드 Advanced electronic device structures using semiconductor structures and superlattices
EP2988339B1 (en) * 2014-08-20 2019-03-27 LG Innotek Co., Ltd. Light emitting device
CN104157758B (en) * 2014-08-21 2017-02-15 湘能华磊光电股份有限公司 Epitaxial wafer of light emitting diode and manufacturing method thereof
TWI612686B (en) 2014-09-03 2018-01-21 晶元光電股份有限公司 Light-emitting element and method of manufacturing same
DE102014113975A1 (en) * 2014-09-26 2016-03-31 Osram Opto Semiconductors Gmbh Electronic component
US11073248B2 (en) 2014-09-28 2021-07-27 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED bulb lamp
US11525547B2 (en) 2014-09-28 2022-12-13 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11686436B2 (en) 2014-09-28 2023-06-27 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and light bulb using LED filament
US11085591B2 (en) 2014-09-28 2021-08-10 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US12007077B2 (en) 2014-09-28 2024-06-11 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED filament and LED light bulb
US11421827B2 (en) 2015-06-19 2022-08-23 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11997768B2 (en) 2014-09-28 2024-05-28 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11543083B2 (en) 2014-09-28 2023-01-03 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
TWI568016B (en) * 2014-12-23 2017-01-21 錼創科技股份有限公司 Semiconductor light-emitting element
CN104538518B (en) * 2015-01-12 2017-07-14 厦门市三安光电科技有限公司 Iii-nitride light emitting devices
CN104600165B (en) * 2015-02-06 2018-03-23 安徽三安光电有限公司 A kind of nitride light-emitting diode structure
CN104701432A (en) * 2015-03-20 2015-06-10 映瑞光电科技(上海)有限公司 GaN-based LED epitaxial structure and preparation method thereof
JP2017069299A (en) * 2015-09-29 2017-04-06 豊田合成株式会社 Group iii nitride semiconductor light-emitting element
KR102391513B1 (en) * 2015-10-05 2022-04-27 삼성전자주식회사 Material layer stack, light emitting device, light emitting package, and method of fabricating the light emitting device
DE102016117477B4 (en) * 2016-09-16 2026-03-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Semiconductor layer sequence and optoelectronic semiconductor chip
JP6477642B2 (en) * 2016-09-23 2019-03-06 日亜化学工業株式会社 Light emitting element
KR102335714B1 (en) * 2016-10-24 2021-12-06 글로 에이비 Light emitting diodes, display elements, and direct-view display elements
KR102604739B1 (en) * 2017-01-05 2023-11-22 삼성전자주식회사 Semiconductor Light Emitting Device
JP6674394B2 (en) * 2017-02-01 2020-04-01 日機装株式会社 Semiconductor light emitting device and method of manufacturing semiconductor light emitting device
DE102017104370A1 (en) * 2017-03-02 2018-09-06 Osram Opto Semiconductors Gmbh Semiconductor body
US10818818B2 (en) * 2017-11-30 2020-10-27 Epistar Corporation Semiconductor device
KR102432226B1 (en) * 2017-12-01 2022-08-12 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Semiconductor device
US10982048B2 (en) 2018-04-17 2021-04-20 Jiaxing Super Lighting Electric Appliance Co., Ltd Organosilicon-modified polyimide resin composition and use thereof
WO2019240894A1 (en) * 2018-06-14 2019-12-19 Glo Ab Epitaxial gallium nitride based light emitting diode and method of making thereof
CN109616561B (en) * 2018-12-13 2020-04-28 广东工业大学 Deep ultraviolet LED chip, deep ultraviolet LED epitaxial wafer and preparation method thereof
JP6968122B2 (en) * 2019-06-06 2021-11-17 日機装株式会社 Nitride semiconductor light emitting device
CN110364603B (en) * 2019-07-18 2024-09-27 佛山市国星半导体技术有限公司 Antistatic epitaxial structure and manufacturing method thereof
KR102540198B1 (en) * 2020-05-22 2023-06-02 충칭 콘카 포토일렉트릭 테크놀로지 리서치 인스티튜트 컴퍼니 리미티드 Superlattice layer, LED epitaxial structure, display device and manufacturing method thereof
JP7194720B2 (en) * 2020-10-30 2022-12-22 日機装株式会社 Nitride semiconductor light emitting device
CN112768576B (en) * 2021-01-25 2022-04-12 天津三安光电有限公司 A kind of light-emitting diode and preparation method
JP7539338B2 (en) * 2021-04-15 2024-08-23 日機装株式会社 Semiconductor light emitting device
CN113410345B (en) * 2021-06-15 2022-08-26 厦门士兰明镓化合物半导体有限公司 Ultraviolet semiconductor light emitting element
CN113707512A (en) * 2021-06-23 2021-11-26 电子科技大学 AlGaN/GaN photocathode with superlattice structure electron emission layer
CN115101637B (en) * 2022-08-25 2022-11-04 江西兆驰半导体有限公司 A kind of light-emitting diode epitaxial wafer and preparation method thereof
CN115986015B (en) * 2022-11-25 2024-04-12 淮安澳洋顺昌光电技术有限公司 Epitaxial wafer with insertion layer and light-emitting diode comprising epitaxial wafer
CN116230823B (en) * 2023-04-07 2025-08-12 江西兆驰半导体有限公司 A high-efficiency light-emitting diode epitaxial wafer and preparation method thereof
TWI906625B (en) * 2023-06-12 2025-12-01 晶元光電股份有限公司 Semiconductor structure
CN116914046B (en) * 2023-09-12 2023-11-21 江西兆驰半导体有限公司 Light-emitting diode epitaxial wafer and preparation method thereof
CN117476827B (en) * 2023-12-25 2024-04-26 江西兆驰半导体有限公司 An epitaxial wafer of a light-emitting diode with low contact resistance and a method for preparing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6337493B1 (en) * 1999-04-21 2002-01-08 Nichia Corporation Nitride semiconductor device
US20050205881A1 (en) * 2004-02-09 2005-09-22 Nichia Corporation Nitride semiconductor device

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09232629A (en) * 1996-02-26 1997-09-05 Toshiba Corp Semiconductor element
EP1014455B1 (en) * 1997-07-25 2006-07-12 Nichia Corporation Nitride semiconductor device
US6015979A (en) * 1997-08-29 2000-01-18 Kabushiki Kaisha Toshiba Nitride-based semiconductor element and method for manufacturing the same
JPH11251685A (en) * 1998-03-05 1999-09-17 Toshiba Corp Semiconductor laser
CA2322490C (en) * 1998-03-12 2010-10-26 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP4815732B2 (en) * 1998-12-08 2011-11-16 日亜化学工業株式会社 Nitride semiconductor device
JP2001274376A (en) * 2000-03-24 2001-10-05 Furukawa Electric Co Ltd:The Low resistance GaN buffer layer
JP2001298215A (en) * 2000-04-14 2001-10-26 Nichia Chem Ind Ltd Light emitting element
JP2002033509A (en) * 2000-07-14 2002-01-31 Hitachi Cable Ltd Light emitting diode
US6958497B2 (en) * 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US7692182B2 (en) * 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
JP2003289156A (en) * 2002-03-28 2003-10-10 Stanley Electric Co Ltd Gallium nitride based semiconductor crystal growth method and compound semiconductor light emitting device
AU2003227230A1 (en) * 2002-04-04 2003-10-20 Sharp Kabushiki Kaisha Semiconductor laser device
US6943377B2 (en) * 2002-11-21 2005-09-13 Sensor Electronic Technology, Inc. Light emitting heterostructure
US7120775B2 (en) 2003-12-29 2006-10-10 Intel Corporation Inter-procedural allocation of stacked registers for a processor
KR100456063B1 (en) 2004-02-13 2004-11-10 에피밸리 주식회사 Ⅲ-Nitride compound semiconductor light emitting device
EP1794813B1 (en) 2004-08-26 2015-05-20 LG Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
US7920612B2 (en) * 2004-08-31 2011-04-05 Finisar Corporation Light emitting semiconductor device having an electrical confinement barrier near the active region
CN100369276C (en) * 2004-09-06 2008-02-13 璨圆光电股份有限公司 The structure of light-emitting diodes
KR100631971B1 (en) 2005-02-28 2006-10-11 삼성전기주식회사 Nitride semiconductor light emitting device
KR100718129B1 (en) * 2005-06-03 2007-05-14 삼성전자주식회사 III-V group compound compound semiconductor device
KR100674862B1 (en) * 2005-08-25 2007-01-29 삼성전기주식회사 Nitride semiconductor light emitting device
JP2007115887A (en) * 2005-10-20 2007-05-10 Rohm Co Ltd Nitride semiconductor device and manufacturing method thereof
RU2315135C2 (en) * 2006-02-06 2008-01-20 Владимир Семенович Абрамов Method of growing nonpolar epitaxial heterostructures based on group iii element nitrides
US7951693B2 (en) * 2006-12-22 2011-05-31 Philips Lumileds Lighting Company, Llc III-nitride light emitting devices grown on templates to reduce strain
KR100850778B1 (en) * 2007-01-03 2008-08-06 삼성전기주식회사 Nitride semiconductor devices
KR100835116B1 (en) * 2007-04-16 2008-06-05 삼성전기주식회사 Nitride semiconductor light emitting device
JP2008297191A (en) * 2007-05-02 2008-12-11 Sumitomo Electric Ind Ltd Method for forming gallium nitride substrate and gallium nitride layer
JP2008288532A (en) * 2007-05-21 2008-11-27 Rohm Co Ltd Nitride semiconductor device
JP2009016467A (en) * 2007-07-03 2009-01-22 Sony Corp Gallium nitride semiconductor device, optical device using the same, and image display device using the same
KR20090034169A (en) * 2007-10-02 2009-04-07 주식회사 에피밸리 Group III nitride semiconductor light emitting device
JP5272390B2 (en) * 2007-11-29 2013-08-28 豊田合成株式会社 Group III nitride semiconductor manufacturing method, group III nitride semiconductor light emitting device manufacturing method, group III nitride semiconductor light emitting device, and lamp
DE102007057674A1 (en) * 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh LED with current spreading layer
JP4644754B2 (en) * 2008-03-13 2011-03-02 昭和電工株式会社 Group III nitride semiconductor device and group III nitride semiconductor light emitting device
US8541817B2 (en) * 2009-11-06 2013-09-24 Nitek, Inc. Multilayer barrier III-nitride transistor for high voltage electronics
DE102009060747B4 (en) * 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung semiconductor chip
WO2011083940A2 (en) * 2010-01-05 2011-07-14 서울옵토디바이스주식회사 Light-emitting diode and method for manufacturing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6337493B1 (en) * 1999-04-21 2002-01-08 Nichia Corporation Nitride semiconductor device
US20050205881A1 (en) * 2004-02-09 2005-09-22 Nichia Corporation Nitride semiconductor device

Also Published As

Publication number Publication date
US20170309775A1 (en) 2017-10-26
CN102782883B (en) 2015-07-29
EP2523228A2 (en) 2012-11-14
EP2523228B1 (en) 2017-04-26
US20120037881A1 (en) 2012-02-16
US9136427B2 (en) 2015-09-15
WO2011083940A2 (en) 2011-07-14
US20130099201A1 (en) 2013-04-25
JP2013516781A (en) 2013-05-13
US9716210B2 (en) 2017-07-25
US8357924B2 (en) 2013-01-22
US10418514B2 (en) 2019-09-17
US20150221822A1 (en) 2015-08-06
WO2011083940A3 (en) 2011-11-24
CN102782883A (en) 2012-11-14
JP5709899B2 (en) 2015-04-30

Similar Documents

Publication Publication Date Title
EP2523228A4 (en) LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
EP2733752A4 (en) LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
EP2567145A4 (en) LIGHT EMITTING DIODE LIGHT SOURCE AND METHOD FOR MANUFACTURING THE SAME
EP2560219A4 (en) LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2408025A4 (en) LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
EP2509119A4 (en) LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
EP2660884A4 (en) LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME
EP2757600A4 (en) LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME
EP2656402A4 (en) ELECTROLUMINESCENT DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME
EP2490269A4 (en) LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2535954A4 (en) LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE
EP2645432A4 (en) LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2583306A4 (en) LIGHT STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
EP2583317A4 (en) LIGHT EMITTING DIODE STRUCTURE OF NANOWIRES AND MANUFACTURING METHOD THEREOF
EP2701214A4 (en) LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
EP2280426A4 (en) LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2717338A4 (en) LIGHT EMITTING DEVICE, LIGHTING DEVICE, AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE
EP2262009A4 (en) LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2579338A4 (en) LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2919258A4 (en) SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
GB2492607B (en) Organic light emitting diode display and method for manufacturing the same
EP2210287A4 (en) LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2741577A4 (en) DEVICE EMITTING ORGANIC ELECTROLUMINESCENT LIGHT AND METHOD FOR MANUFACTURING THE SAME
EP2816622A4 (en) LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME
EP2259344A4 (en) LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20120703

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SEOUL VIOSYS CO., LTD

A4 Supplementary search report drawn up and despatched

Effective date: 20140604

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/32 20100101ALN20140528BHEP

Ipc: H01L 33/02 20100101ALI20140528BHEP

Ipc: H01L 33/04 20100101AFI20140528BHEP

17Q First examination report despatched

Effective date: 20150923

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/32 20100101ALN20161018BHEP

Ipc: H01L 33/02 20100101ALI20161018BHEP

Ipc: H01L 21/02 20060101ALN20161018BHEP

Ipc: H01L 33/04 20100101AFI20161018BHEP

INTG Intention to grant announced

Effective date: 20161107

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 888556

Country of ref document: AT

Kind code of ref document: T

Effective date: 20170515

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602011037327

Country of ref document: DE

REG Reference to a national code

Ref country code: NL

Ref legal event code: FP

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 888556

Country of ref document: AT

Kind code of ref document: T

Effective date: 20170426

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170727

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170726

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170826

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170726

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 8

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602011037327

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20180129

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180103

REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20180131

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180131

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180131

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180131

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180103

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180103

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20110103

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

Ref country code: MK

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20170426

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20170426

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Ref document number: 602011037327

Country of ref document: DE

Free format text: PREVIOUS MAIN CLASS: H01L0033040000

Ipc: H10H0020811000

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 20251120

Year of fee payment: 16

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20251120

Year of fee payment: 16

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20251125

Year of fee payment: 16

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20251120

Year of fee payment: 16