EP2659518A4 - LASER PROCESSING METHODS FOR PHOTOVOLTAIC SOLAR CELLS - Google Patents

LASER PROCESSING METHODS FOR PHOTOVOLTAIC SOLAR CELLS

Info

Publication number
EP2659518A4
EP2659518A4 EP11853473.4A EP11853473A EP2659518A4 EP 2659518 A4 EP2659518 A4 EP 2659518A4 EP 11853473 A EP11853473 A EP 11853473A EP 2659518 A4 EP2659518 A4 EP 2659518A4
Authority
EP
European Patent Office
Prior art keywords
solar cells
laser processing
processing methods
photovoltaic solar
photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11853473.4A
Other languages
German (de)
French (fr)
Other versions
EP2659518A2 (en
Inventor
Mehrdad M Moslehi
Virendra V Rana
Pranav Anbalagan
Vivek Saraswat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beamreach Solexel Assets Inc
Original Assignee
Solexel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/118,295 external-priority patent/US8399331B2/en
Priority claimed from US13/271,212 external-priority patent/US9508886B2/en
Priority claimed from US13/303,488 external-priority patent/US20130164883A1/en
Application filed by Solexel Inc filed Critical Solexel Inc
Publication of EP2659518A2 publication Critical patent/EP2659518A2/en
Publication of EP2659518A4 publication Critical patent/EP2659518A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
EP11853473.4A 2010-12-30 2011-12-30 LASER PROCESSING METHODS FOR PHOTOVOLTAIC SOLAR CELLS Withdrawn EP2659518A4 (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US201061428600P 2010-12-30 2010-12-30
US201061428953P 2010-12-31 2010-12-31
US201061428957P 2010-12-31 2010-12-31
US201113057104A 2011-02-01 2011-02-01
US13/118,295 US8399331B2 (en) 2007-10-06 2011-05-27 Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US13/271,212 US9508886B2 (en) 2007-10-06 2011-10-11 Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
US13/303,488 US20130164883A1 (en) 2007-10-06 2011-11-23 Laser annealing applications in high-efficiency solar cells
PCT/US2011/068037 WO2012092537A2 (en) 2010-12-30 2011-12-30 Laser processing methods for photovoltaic solar cells

Publications (2)

Publication Number Publication Date
EP2659518A2 EP2659518A2 (en) 2013-11-06
EP2659518A4 true EP2659518A4 (en) 2014-09-24

Family

ID=46383873

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11853473.4A Withdrawn EP2659518A4 (en) 2010-12-30 2011-12-30 LASER PROCESSING METHODS FOR PHOTOVOLTAIC SOLAR CELLS

Country Status (3)

Country Link
EP (1) EP2659518A4 (en)
KR (1) KR101384853B1 (en)
WO (1) WO2012092537A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8637340B2 (en) 2004-11-30 2014-01-28 Solexel, Inc. Patterning of silicon oxide layers using pulsed laser ablation
US9508886B2 (en) 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
US8399331B2 (en) 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US9455362B2 (en) 2007-10-06 2016-09-27 Solexel, Inc. Laser irradiation aluminum doping for monocrystalline silicon substrates
US9583651B2 (en) 2011-12-26 2017-02-28 Solexel, Inc. Systems and methods for enhanced light trapping in solar cells
CN103346200A (en) * 2013-05-13 2013-10-09 福建铂阳精工设备有限公司 Glass substrate and method for manufacturing the same, and method for manufacturing thin-film solar cell
DE102014101235A1 (en) * 2014-01-31 2015-08-06 Rofin-Baasel Lasertech Gmbh & Co. Kg Method for removing dielectric layers of semiconductor devices by means of a laser beam
KR102030521B1 (en) 2017-11-30 2019-10-10 (주)에스엠텍 Glass surface machining device for solar module using laser
CN111063760B (en) * 2018-10-17 2022-06-14 晶澳太阳能有限公司 Preparation process of solar cell
CN113257957B (en) * 2021-06-11 2022-08-23 四川蜀旺新能源股份有限公司 Super-doped silicon thin-film solar cell and manufacturing method thereof
CN114447156A (en) * 2022-01-27 2022-05-06 环晟光伏(江苏)有限公司 A method for laser grooving on the front surface of electroplating cells
CN116618821B (en) * 2022-05-17 2024-06-28 武汉帝尔激光科技股份有限公司 A method for modifying a film and realizing patterning by using a laser beam and its application
CN115528136A (en) * 2022-09-21 2022-12-27 浙江爱旭太阳能科技有限公司 A kind of back contact battery and its manufacturing method, battery component, photovoltaic system
CN116722077A (en) * 2023-06-28 2023-09-08 滁州捷泰新能源科技有限公司 SE structure preparation method and solar cell
CN117253934A (en) * 2023-11-20 2023-12-19 隆基绿能科技股份有限公司 A kind of back contact battery and photovoltaic module

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7517709B1 (en) * 2007-11-16 2009-04-14 Applied Materials, Inc. Method of forming backside point contact structures for silicon solar cells
US20100055822A1 (en) * 2008-08-27 2010-03-04 Weidman Timothy W Back contact solar cells using printed dielectric barrier
US20100108130A1 (en) * 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin Interdigitated backside contact solar cell and manufacturing process thereof
DE102009018112B3 (en) * 2009-04-20 2010-12-16 Institut Für Solarenergieforschung Gmbh Method for producing a semiconductor component, in particular a solar cell, with a locally opened dielectric layer and corresponding semiconductor component

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8420435B2 (en) 2009-05-05 2013-04-16 Solexel, Inc. Ion implantation fabrication process for thin-film crystalline silicon solar cells
KR100946797B1 (en) * 2007-09-07 2010-03-11 주식회사 엘티에스 Manufacturing method of high efficiency solar cell using laser
KR20100085736A (en) * 2009-01-21 2010-07-29 현대중공업 주식회사 Crystalline silicon photovoltaic device and thereof manufacturing method
KR101145928B1 (en) * 2009-03-11 2012-05-15 엘지전자 주식회사 Solar Cell and Manufacturing Method of the same
KR101155563B1 (en) * 2009-05-27 2012-06-19 주식회사 효성 Method for manufacturing for Solar cell using a Laser

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7517709B1 (en) * 2007-11-16 2009-04-14 Applied Materials, Inc. Method of forming backside point contact structures for silicon solar cells
US20100055822A1 (en) * 2008-08-27 2010-03-04 Weidman Timothy W Back contact solar cells using printed dielectric barrier
US20100108130A1 (en) * 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin Interdigitated backside contact solar cell and manufacturing process thereof
DE102009018112B3 (en) * 2009-04-20 2010-12-16 Institut Für Solarenergieforschung Gmbh Method for producing a semiconductor component, in particular a solar cell, with a locally opened dielectric layer and corresponding semiconductor component

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ANDREAS GROHE ET AL: "Novel laser technologies for crystalline silicon solar cell production", PROCEEDINGS OF SPIE, vol. 7202, 2009, pages 72020P, XP055010538, ISSN: 0277-786X, DOI: 10.1117/12.810128 *
MANGERSNES KRISTER ET AL: "Damage free laser ablation of SiO2 for local contact opening on silicon solar cells using an a-Si:H buffer layer", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 107, no. 4, 23 February 2010 (2010-02-23), pages 43518 - 43518, XP012133434, ISSN: 0021-8979, DOI: 10.1063/1.3309382 *
See also references of WO2012092537A2 *

Also Published As

Publication number Publication date
KR101384853B1 (en) 2014-04-16
EP2659518A2 (en) 2013-11-06
KR20130099229A (en) 2013-09-05
WO2012092537A3 (en) 2012-11-22
WO2012092537A2 (en) 2012-07-05

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