EP2681760A4 - METHOD AND SYSTEM FOR FORMING PATTERNS BY BEAM LITHOGRAPHY OF CHARGED PARTICLES - Google Patents

METHOD AND SYSTEM FOR FORMING PATTERNS BY BEAM LITHOGRAPHY OF CHARGED PARTICLES

Info

Publication number
EP2681760A4
EP2681760A4 EP12751849.6A EP12751849A EP2681760A4 EP 2681760 A4 EP2681760 A4 EP 2681760A4 EP 12751849 A EP12751849 A EP 12751849A EP 2681760 A4 EP2681760 A4 EP 2681760A4
Authority
EP
European Patent Office
Prior art keywords
charged particles
beam lithography
forming patterns
patterns
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12751849.6A
Other languages
German (de)
French (fr)
Other versions
EP2681760A2 (en
Inventor
Akira Fujimura
Harold Robert Zable
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
D2S Inc
Original Assignee
D2S Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/037,263 external-priority patent/US20120221985A1/en
Priority claimed from US13/329,315 external-priority patent/US20120219886A1/en
Priority claimed from US13/329,314 external-priority patent/US20120217421A1/en
Application filed by D2S Inc filed Critical D2S Inc
Publication of EP2681760A2 publication Critical patent/EP2681760A2/en
Publication of EP2681760A4 publication Critical patent/EP2681760A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2045—Electron beam lithography processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H01J37/3026—Patterning strategy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
EP12751849.6A 2011-02-28 2012-02-15 METHOD AND SYSTEM FOR FORMING PATTERNS BY BEAM LITHOGRAPHY OF CHARGED PARTICLES Withdrawn EP2681760A4 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US13/037,263 US20120221985A1 (en) 2011-02-28 2011-02-28 Method and system for design of a surface to be manufactured using charged particle beam lithography
US13/329,315 US20120219886A1 (en) 2011-02-28 2011-12-18 Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US13/329,314 US20120217421A1 (en) 2011-02-28 2011-12-18 Method and system for forming patterns using charged particle beam lithography with overlapping shots
PCT/US2012/025149 WO2012118616A2 (en) 2011-02-28 2012-02-15 Method and system for forming patterns using charged particle beam lithography

Publications (2)

Publication Number Publication Date
EP2681760A2 EP2681760A2 (en) 2014-01-08
EP2681760A4 true EP2681760A4 (en) 2016-12-07

Family

ID=46758421

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12751849.6A Withdrawn EP2681760A4 (en) 2011-02-28 2012-02-15 METHOD AND SYSTEM FOR FORMING PATTERNS BY BEAM LITHOGRAPHY OF CHARGED PARTICLES

Country Status (4)

Country Link
EP (1) EP2681760A4 (en)
JP (1) JP6140082B2 (en)
KR (2) KR102005083B1 (en)
WO (1) WO2012118616A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6057635B2 (en) * 2012-09-14 2017-01-11 株式会社ニューフレアテクノロジー Charged particle beam drawing apparatus and charged particle beam drawing method
CN105717748B (en) * 2014-12-04 2017-12-29 上海微电子装备（集团）股份有限公司 A kind of back-exposure technique optimization method
JP6577787B2 (en) * 2015-08-11 2019-09-18 株式会社ニューフレアテクノロジー Multi-charged particle beam writing apparatus and multi-charged particle beam writing method
JP6616986B2 (en) * 2015-09-14 2019-12-04 株式会社ニューフレアテクノロジー Multi-charged particle beam writing method and multi-charged particle beam writing apparatus
US10444629B2 (en) 2016-06-28 2019-10-15 D2S, Inc. Bias correction for lithography
EP3355337B8 (en) * 2017-01-27 2024-04-10 IMS Nanofabrication GmbH Advanced dose-level quantization for multibeam-writers
JP7094782B2 (en) * 2018-06-01 2022-07-04 株式会社ニューフレアテクノロジー Electron beam inspection device and electron beam inspection method
US10884395B2 (en) * 2018-12-22 2021-01-05 D2S, Inc. Method and system of reducing charged particle beam write time
US11604451B2 (en) 2018-12-22 2023-03-14 D2S, Inc. Method and system of reducing charged particle beam write time
US20230124768A1 (en) 2019-05-24 2023-04-20 D2S, Inc. Method and system for determining a charged particle beam exposure for a local pattern density

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100058279A1 (en) * 2008-09-01 2010-03-04 D2S, Inc. Method and System for Design of a Reticle to be Manufactured Using Variable Shaped Beam Lithography

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264711A (en) * 1979-12-10 1981-04-28 Burroughs Corporation Method of compensating for proximity effects in electron-beam lithography
JP5001563B2 (en) * 2006-03-08 2012-08-15 株式会社ニューフレアテクノロジー Creating charged particle beam drawing data
US7799489B2 (en) * 2008-09-01 2010-09-21 D2S, Inc. Method for design and manufacture of a reticle using variable shaped beam lithography
US8057970B2 (en) * 2008-09-01 2011-11-15 D2S, Inc. Method and system for forming circular patterns on a surface
TWI506672B (en) * 2008-09-01 2015-11-01 D2S Inc Method for fracturing and forming circular patterns on a surface and for manufacturing a semiconductor device
KR101646909B1 (en) * 2010-08-19 2016-08-09 삼성전자주식회사 Method for manufacturing semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100058279A1 (en) * 2008-09-01 2010-03-04 D2S, Inc. Method and System for Design of a Reticle to be Manufactured Using Variable Shaped Beam Lithography

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CHRISTOPHE PIERRAT ET AL: "Impact of model-based fracturing on e-beam proximity effect correction methodology", OPTICAL SENSING II, vol. 7823, 30 September 2010 (2010-09-30), 1000 20th St. Bellingham WA 98225-6705 USA, pages 782313, XP055314684, ISSN: 0277-786X, ISBN: 978-1-62841-971-9, DOI: 10.1117/12.864126 *
HAROLD R. ZABLE ET AL: "Writing wavy metal 1 shapes on 22-nm logic wafers with less shot count", OPTICAL SENSING II, vol. 7748, 29 April 2010 (2010-04-29), 1000 20th St. Bellingham WA 98225-6705 USA, pages 77480X, XP055314952, ISSN: 0277-786X, ISBN: 978-1-62841-971-9, DOI: 10.1117/12.866971 *
KAZUYUKI HAGIWARA ET AL: "Model-based mask data preparation (MB-MDP) for ArF and EUV mask process correction", OPTICAL SENSING II, vol. 8081, 22 April 2011 (2011-04-22), 1000 20th St. Bellingham WA 98225-6705 USA, pages 80810U, XP055314980, ISSN: 0277-786X, ISBN: 978-1-62841-971-9, DOI: 10.1117/12.898862 *

Also Published As

Publication number Publication date
WO2012118616A3 (en) 2012-12-06
WO2012118616A2 (en) 2012-09-07
JP6140082B2 (en) 2017-05-31
EP2681760A2 (en) 2014-01-08
JP2014512670A (en) 2014-05-22
KR20140015340A (en) 2014-02-06
KR102005083B1 (en) 2019-07-29
KR20180128525A (en) 2018-12-03

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