EP2718963A4 - METHOD AND SYSTEM FOR ONLINE CHEMICAL PHASE DEPOSITION - Google Patents

METHOD AND SYSTEM FOR ONLINE CHEMICAL PHASE DEPOSITION

Info

Publication number
EP2718963A4
EP2718963A4 EP12796599.4A EP12796599A EP2718963A4 EP 2718963 A4 EP2718963 A4 EP 2718963A4 EP 12796599 A EP12796599 A EP 12796599A EP 2718963 A4 EP2718963 A4 EP 2718963A4
Authority
EP
European Patent Office
Prior art keywords
phase deposition
chemical phase
online chemical
online
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12796599.4A
Other languages
German (de)
French (fr)
Other versions
EP2718963A2 (en
Inventor
Piero Sferlazzo
Thomas Michael Lampros
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SINGULUS MOCVD I GR GmbH
Original Assignee
Singulus Mocvd I Gr GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/156,465 external-priority patent/US8865259B2/en
Application filed by Singulus Mocvd I Gr GmbH filed Critical Singulus Mocvd I Gr GmbH
Publication of EP2718963A2 publication Critical patent/EP2718963A2/en
Publication of EP2718963A4 publication Critical patent/EP2718963A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45517—Confinement of gases to vicinity of substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3224—Materials thereof being Group IIB-VIA semiconductors
    • H10P14/3228—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3236—Materials thereof being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
EP12796599.4A 2011-06-09 2012-05-17 METHOD AND SYSTEM FOR ONLINE CHEMICAL PHASE DEPOSITION Withdrawn EP2718963A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/156,465 US8865259B2 (en) 2010-04-26 2011-06-09 Method and system for inline chemical vapor deposition
PCT/US2012/038256 WO2012170166A2 (en) 2011-06-09 2012-05-17 Method and system for inline chemical vapor deposition

Publications (2)

Publication Number Publication Date
EP2718963A2 EP2718963A2 (en) 2014-04-16
EP2718963A4 true EP2718963A4 (en) 2014-12-03

Family

ID=47296674

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12796599.4A Withdrawn EP2718963A4 (en) 2011-06-09 2012-05-17 METHOD AND SYSTEM FOR ONLINE CHEMICAL PHASE DEPOSITION

Country Status (5)

Country Link
EP (1) EP2718963A4 (en)
JP (1) JP2014523479A (en)
KR (1) KR20140037198A (en)
CN (1) CN103930970A (en)
WO (1) WO2012170166A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105047750A (en) * 2014-10-10 2015-11-11 广东汉能薄膜太阳能有限公司 Method for increasing conversion efficiency of thin-film solar cell
US20170314129A1 (en) * 2016-04-29 2017-11-02 Lam Research Corporation Variable cycle and time rf activation method for film thickness matching in a multi-station deposition system
US11990609B2 (en) 2017-06-20 2024-05-21 Coreshell Technologies, Incorporated Solution-deposited electrode coatings for thermal runaway mitigation in rechargeable batteries
US11961991B2 (en) 2017-06-20 2024-04-16 Coreshell Technologies, Incorporated Solution-phase deposition of thin films on solid-state electrolytes
JP7200143B2 (en) * 2017-06-20 2023-01-06 コアシェル テクノロジーズ インコーポレイテッド Methods, systems, and compositions for liquid deposition of thin films on surfaces of battery electrodes
US10697059B2 (en) 2017-09-15 2020-06-30 Lam Research Corporation Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching
CN111584676A (en) * 2019-02-15 2020-08-25 北京铂阳顶荣光伏科技有限公司 Coating equipment and continuous coating method
JP6860048B2 (en) * 2019-08-30 2021-04-14 株式会社明電舎 Atomic layer deposition method
US12270103B2 (en) 2019-11-08 2025-04-08 Lam Research Corporation Plasma-enhanced atomic layer deposition with radio-frequency power ramping
JP7522670B2 (en) * 2021-01-12 2024-07-25 株式会社アルバック Continuous Processing Equipment
CN116334589B (en) * 2023-03-22 2024-01-26 江苏微导纳米科技股份有限公司 Substrate processing apparatus and processing method
WO2025143791A1 (en) * 2023-12-29 2025-07-03 주식회사 코팅솔루션포유 Atomic layer deposition device
WO2026019228A1 (en) * 2024-07-19 2026-01-22 (주)에스티아이 Ceramic printed circuit board and manufacturing method therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100310766A1 (en) * 2009-06-07 2010-12-09 Veeco Compound Semiconductor, Inc. Roll-to-Roll Chemical Vapor Deposition System
WO2011139472A2 (en) * 2010-04-26 2011-11-10 Aventa Systems, Llc Inline chemical vapor deposition system

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770485B2 (en) * 1985-12-20 1995-07-31 キヤノン株式会社 Continuous production system for photovoltaic elements
JP2589599B2 (en) * 1989-11-30 1997-03-12 住友精密工業株式会社 Blow-out type surface treatment device
JP2000306905A (en) * 1999-04-22 2000-11-02 Sony Corp Thin film forming equipment
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
JP4364494B2 (en) * 2002-10-07 2009-11-18 積水化学工業株式会社 Plasma surface treatment equipment
SE0301350D0 (en) * 2003-05-08 2003-05-08 Forskarpatent I Uppsala Ab A thin-film solar cell
JP2004360020A (en) * 2003-06-05 2004-12-24 Konica Minolta Holdings Inc Method and apparatus for depositing thin film
SE0400631D0 (en) * 2004-03-11 2004-03-11 Forskarpatent I Uppsala Ab Thin film solar cell and manufacturing method
EP2188406B1 (en) * 2007-09-12 2018-03-07 Flisom AG Method for manufacturing a compound film
TW201034055A (en) * 2008-10-10 2010-09-16 Alta Devices Inc Continuous feed chemical vapor deposition
JP2010192690A (en) * 2009-02-18 2010-09-02 Tdk Corp Method of manufacturing solar cell
US20100221426A1 (en) * 2009-03-02 2010-09-02 Fluens Corporation Web Substrate Deposition System
US7897020B2 (en) * 2009-04-13 2011-03-01 Miasole Method for alkali doping of thin film photovoltaic materials
JP2011063827A (en) * 2009-09-15 2011-03-31 Fuji Electric Holdings Co Ltd Plasma cvd apparatus and film deposition method by plasma cvd
US8048707B1 (en) * 2010-10-19 2011-11-01 Miasole Sulfur salt containing CIG targets, methods of making and methods of use thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100310766A1 (en) * 2009-06-07 2010-12-09 Veeco Compound Semiconductor, Inc. Roll-to-Roll Chemical Vapor Deposition System
WO2011139472A2 (en) * 2010-04-26 2011-11-10 Aventa Systems, Llc Inline chemical vapor deposition system

Also Published As

Publication number Publication date
EP2718963A2 (en) 2014-04-16
WO2012170166A3 (en) 2013-04-25
KR20140037198A (en) 2014-03-26
WO2012170166A2 (en) 2012-12-13
JP2014523479A (en) 2014-09-11
CN103930970A (en) 2014-07-16

Similar Documents

Publication Publication Date Title
EP2718963A4 (en) METHOD AND SYSTEM FOR ONLINE CHEMICAL PHASE DEPOSITION
EP2668620A4 (en) LOGISTICS SYSTEM AND METHOD FOR PROVIDING A LOGISTIC SERVICE OF THE LOGISTICS SYSTEM
EP2795340A4 (en) APPARATUS AND METHOD FOR TRANSPORTING AEROSOL
EP2686061A4 (en) SYSTEM AND METHOD FOR CONTROLLING AND MINIMIZING RADIATION
EP2729870A4 (en) SYSTEM AND METHOD FOR VALIDATING COMPONENTS DURING A STARTING PROCESS
EP2923324A4 (en) SYSTEM AND METHOD FOR SIMPLIFIED PAYMENT
EP2654531A4 (en) CLEANING SYSTEM AND METHOD FOR DRINKING APPARATUS
EP2721743A4 (en) FEEDBACK METHOD AND APPARATUS FOR COOPERATIVE COMMUNICATION SYSTEM
EP2782667A4 (en) APPARATUS AND METHOD FOR TREATING A BIOMASS
EP2933091A4 (en) PIPE COATING AND METHOD FOR COATING A PIPE
EP2864865A4 (en) SYSTEM AND METHOD FOR CREATING DIAPORAMAS
EP2717795A4 (en) SYSTEM AND METHOD FOR RENAL RECOGNITION
EP2694785A4 (en) SYSTEM, METHOD, AND APPARATUS FOR MONITORING POST-PROCESSING SYSTEM
EP2721240A4 (en) METHOD AND SYSTEM FOR PREPARING A LOADING PLAN
EP2747693A4 (en) SYSTEM AND METHOD FOR DETATOTING
EP2763934A4 (en) APPARATUS AND METHOD FOR CONDENSED PHASE PRODUCTION OF TRISILYLAMINE
EP2697409A4 (en) SYSTEM AND METHOD FOR INDUSTRIAL CLEANING
EP2744712A4 (en) APPARATUS AND METHOD FOR FORMING CARTON
EP2769550A4 (en) METHOD AND APPARATUS FOR LOOP FILTRATION
ZA201309358B (en) Method and system for processing a search request
EP2721241A4 (en) METHOD AND SYSTEM FOR PREPARING A LOADING PLAN
EP2396450A4 (en) SYSTEM AND METHOD FOR CHEMICAL VAPOR DEPOSITION
EP2695368A4 (en) APPARATUS, SYSTEM AND METHOD FOR VISIOPHONE
EP2701373A4 (en) METHOD, APPARATUS AND SYSTEM FOR NON-VECTORIZED LINE SUPPORT
EP2734770A4 (en) METHOD AND SYSTEM FOR REINFORCED PIPE INSULATION

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20131202

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20141105

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/205 20060101ALI20141030BHEP

Ipc: C23C 16/54 20060101ALI20141030BHEP

Ipc: C23C 16/40 20060101ALI20141030BHEP

Ipc: H01L 31/18 20060101ALI20141030BHEP

Ipc: C23C 16/455 20060101AFI20141030BHEP

RIC1 Information provided on ipc code assigned before grant

Ipc: C23C 16/54 20060101ALI20150921BHEP

Ipc: H01L 21/365 20060101ALI20150921BHEP

Ipc: C23C 16/40 20060101ALI20150921BHEP

Ipc: C23C 16/455 20060101AFI20150921BHEP

Ipc: H01L 31/20 20060101ALI20150921BHEP

Ipc: H01L 31/0749 20120101ALI20150921BHEP

Ipc: H01L 31/032 20060101ALI20150921BHEP

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

INTG Intention to grant announced

Effective date: 20151113

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20160324