EP2721655A4 - TRANSMITTER DEVICE WITH ENHANCED EXTRACTION - Google Patents

TRANSMITTER DEVICE WITH ENHANCED EXTRACTION

Info

Publication number
EP2721655A4
EP2721655A4 EP12801261.4A EP12801261A EP2721655A4 EP 2721655 A4 EP2721655 A4 EP 2721655A4 EP 12801261 A EP12801261 A EP 12801261A EP 2721655 A4 EP2721655 A4 EP 2721655A4
Authority
EP
European Patent Office
Prior art keywords
transmitter device
enhanced extraction
enhanced
extraction
transmitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12801261.4A
Other languages
German (de)
French (fr)
Other versions
EP2721655A2 (en
Inventor
Maxim S Shatalov
Alexander Dobrinsky
Michael Shur
Remigijus Gaska
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sensor Electronic Technology Inc
Original Assignee
Sensor Electronic Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sensor Electronic Technology Inc filed Critical Sensor Electronic Technology Inc
Publication of EP2721655A2 publication Critical patent/EP2721655A2/en
Publication of EP2721655A4 publication Critical patent/EP2721655A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V5/00—Refractors for light sources
    • F21V5/002—Refractors for light sources using microoptical elements for redirecting or diffusing light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/042—Superluminescent diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Devices (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
EP12801261.4A 2011-06-15 2012-06-15 TRANSMITTER DEVICE WITH ENHANCED EXTRACTION Withdrawn EP2721655A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161497489P 2011-06-15 2011-06-15
US13/517,711 US9142741B2 (en) 2011-06-15 2012-06-14 Emitting device with improved extraction
PCT/US2012/042555 WO2012174311A2 (en) 2011-06-15 2012-06-15 Emitting device with improved extraction

Publications (2)

Publication Number Publication Date
EP2721655A2 EP2721655A2 (en) 2014-04-23
EP2721655A4 true EP2721655A4 (en) 2014-11-12

Family

ID=47357750

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12801261.4A Withdrawn EP2721655A4 (en) 2011-06-15 2012-06-15 TRANSMITTER DEVICE WITH ENHANCED EXTRACTION

Country Status (6)

Country Link
US (1) US9142741B2 (en)
EP (1) EP2721655A4 (en)
JP (1) JP2014519722A (en)
KR (1) KR20140053958A (en)
TW (1) TWI509833B (en)
WO (1) WO2012174311A2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10319881B2 (en) 2011-06-15 2019-06-11 Sensor Electronic Technology, Inc. Device including transparent layer with profiled surface for improved extraction
US10522714B2 (en) 2011-06-15 2019-12-31 Sensor Electronic Technology, Inc. Device with inverted large scale light extraction structures
US9337387B2 (en) 2011-06-15 2016-05-10 Sensor Electronic Technology, Inc. Emitting device with improved extraction
US9741899B2 (en) 2011-06-15 2017-08-22 Sensor Electronic Technology, Inc. Device with inverted large scale light extraction structures
TWI474504B (en) * 2012-06-21 2015-02-21 Lextar Electronics Corp Light-emitting diode structure and manufacturing method thereof
WO2014207662A1 (en) * 2013-06-27 2014-12-31 Koninklijke Philips N.V. Multi-scale surfacing roughening of optoelectronic devices for light extraction enhancement
WO2015061325A1 (en) * 2013-10-21 2015-04-30 Sensor Electronic Technology, Inc. Heterostructure including a composite semiconductor layer
US9833526B2 (en) 2014-02-25 2017-12-05 Sensor Electronic Technology, Inc. Ultraviolet illuminator
US10456488B2 (en) 2014-03-07 2019-10-29 Sensor Electronic Technology, Inc. Ultraviolet transparent structure for ultraviolet illumination using scattered and focused radiation
DE202015009236U1 (en) 2014-03-07 2016-12-27 Sensor Electronic Technology, Inc. Ultraviolet Oberflächenilluminator
KR102300718B1 (en) * 2014-04-24 2021-09-09 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소 Ultraviolet light-emitting diode and electric apparatus having the same
JP2015216352A (en) * 2014-04-24 2015-12-03 国立研究開発法人理化学研究所 Ultraviolet light-emitting diode and electrical apparatus including the same
DE102015102365A1 (en) * 2015-02-19 2016-08-25 Osram Opto Semiconductors Gmbh Radiation body and method for producing a radiation body
WO2017127461A1 (en) 2016-01-18 2017-07-27 Sensor Electronic Technology, Inc. Semiconductor device with improved light propagation
TWI698057B (en) * 2018-02-13 2020-07-01 國立交通大學 Two-dimensional photonic crystal laser with transparent oxide conducting cladding layers
US20200075806A1 (en) * 2018-08-29 2020-03-05 Good Mass International Co., Ltd. Patterned substrate for light emitting diode
US10971650B2 (en) 2019-07-29 2021-04-06 Lextar Electronics Corporation Light emitting device
US11698326B2 (en) 2019-08-16 2023-07-11 Corning Incorporated Nondestructive imaging and surface quality inspection of structured plates
US11038088B2 (en) 2019-10-14 2021-06-15 Lextar Electronics Corporation Light emitting diode package
TWI786503B (en) * 2020-12-29 2022-12-11 晶元光電股份有限公司 Light-emitting device and manufacturing method thereof

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US20030132445A1 (en) * 2002-01-15 2003-07-17 Shunji Yoshitake Semiconductor light emission device and manufacturing method thereof
WO2006096767A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
US20080277686A1 (en) * 2007-05-08 2008-11-13 Huga Optotech Inc. Light emitting device and method for making the same
US20090159871A1 (en) * 2007-12-21 2009-06-25 Chia-Ming Lee Light emitting diode structure and method for fabricating the same
JP2009242130A (en) * 2008-03-28 2009-10-22 Dowa Electronics Materials Co Ltd Substrate for epitaxial growth and method for manufacturing the same, and group iii nitride semiconductor element
JP2010129596A (en) * 2008-11-25 2010-06-10 Shin Etsu Handotai Co Ltd Light-emitting element and manufacturing method thereof

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US4497974A (en) 1982-11-22 1985-02-05 Exxon Research & Engineering Co. Realization of a thin film solar cell with a detached reflector
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
HK1048709A1 (en) 1999-12-03 2003-04-11 Cree, Inc. Enhanced light extraction in leds through the use of internal and external optical elements
TW472400B (en) 2000-06-23 2002-01-11 United Epitaxy Co Ltd Method for roughing semiconductor device surface to increase the external quantum efficiency
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
WO2002089221A1 (en) 2001-04-23 2002-11-07 Matsushita Electric Works, Ltd. Light emitting device comprising led chip
US7211831B2 (en) 2003-04-15 2007-05-01 Luminus Devices, Inc. Light emitting device with patterned surfaces
US7704763B2 (en) 2003-12-09 2010-04-27 The Regents Of The University Of California Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface
TWI237402B (en) 2004-03-24 2005-08-01 Epistar Corp High luminant device
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
GB2418532A (en) * 2004-09-28 2006-03-29 Arima Optoelectronic Textured light emitting diode structure with enhanced fill factor
KR100590775B1 (en) * 2004-12-08 2006-06-19 한국전자통신연구원 Silicon-based light emitting diode
US7473936B2 (en) 2005-01-11 2009-01-06 Semileds Corporation Light emitting diodes (LEDs) with improved light extraction by roughening
US7524686B2 (en) 2005-01-11 2009-04-28 Semileds Corporation Method of making light emitting diodes (LEDs) with improved light extraction by roughening
US7897420B2 (en) 2005-01-11 2011-03-01 SemiLEDs Optoelectronics Co., Ltd. Light emitting diodes (LEDs) with improved light extraction by roughening
US7335920B2 (en) 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
JP2006222288A (en) * 2005-02-10 2006-08-24 Toshiba Corp White LED and manufacturing method thereof
KR100661602B1 (en) 2005-12-09 2006-12-26 삼성전기주식회사 Method of manufacturing vertical structure gallium nitride based LED device
DE102007004302A1 (en) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Semiconductor chip for light emitting diode, has support with two support surfaces, and semiconductor layer sequence has active area for generation of radiation
KR101501307B1 (en) 2007-09-21 2015-03-10 가부시끼가이샤 도시바 Light-emitting device manufacturing method
KR20100097179A (en) 2007-11-30 2010-09-02 더 리전트 오브 더 유니버시티 오브 캘리포니아 High light extraction efficiency nitride based light emitting diode by surface roughening
WO2009140285A1 (en) * 2008-05-12 2009-11-19 The Regents Of The University Of California Photoelectrochemical roughening of p-side-up gan-based light emitting diodes
TW201005997A (en) * 2008-07-24 2010-02-01 Advanced Optoelectronic Tech Rough structure of optoeletronics device and fabrication thereof
TW201041192A (en) 2009-05-11 2010-11-16 Semi Photonics Co Ltd LED device with a roughened light extraction structure and manufacturing methods thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030132445A1 (en) * 2002-01-15 2003-07-17 Shunji Yoshitake Semiconductor light emission device and manufacturing method thereof
WO2006096767A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
US20080277686A1 (en) * 2007-05-08 2008-11-13 Huga Optotech Inc. Light emitting device and method for making the same
US20090159871A1 (en) * 2007-12-21 2009-06-25 Chia-Ming Lee Light emitting diode structure and method for fabricating the same
JP2009242130A (en) * 2008-03-28 2009-10-22 Dowa Electronics Materials Co Ltd Substrate for epitaxial growth and method for manufacturing the same, and group iii nitride semiconductor element
JP2010129596A (en) * 2008-11-25 2010-06-10 Shin Etsu Handotai Co Ltd Light-emitting element and manufacturing method thereof

Also Published As

Publication number Publication date
US20140008675A1 (en) 2014-01-09
EP2721655A2 (en) 2014-04-23
TWI509833B (en) 2015-11-21
WO2012174311A2 (en) 2012-12-20
US9142741B2 (en) 2015-09-22
KR20140053958A (en) 2014-05-08
JP2014519722A (en) 2014-08-14
WO2012174311A3 (en) 2013-06-06
TW201308668A (en) 2013-02-16

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Legal Events

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Effective date: 20141009

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