EP2834890A4 - Laser architectures - Google Patents

Laser architectures

Info

Publication number
EP2834890A4
EP2834890A4 EP13772122.1A EP13772122A EP2834890A4 EP 2834890 A4 EP2834890 A4 EP 2834890A4 EP 13772122 A EP13772122 A EP 13772122A EP 2834890 A4 EP2834890 A4 EP 2834890A4
Authority
EP
European Patent Office
Prior art keywords
laser architectures
architectures
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13772122.1A
Other languages
German (de)
French (fr)
Other versions
EP2834890A1 (en
Inventor
Leeuwen Robert Van
Bing Xu
Qing Wang
Chuni Ghosh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RealD Inc
Original Assignee
RealD Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/764,770 external-priority patent/US20130208741A1/en
Application filed by RealD Inc filed Critical RealD Inc
Publication of EP2834890A1 publication Critical patent/EP2834890A1/en
Publication of EP2834890A4 publication Critical patent/EP2834890A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08054—Passive cavity elements acting on the polarization, e.g. a polarizer for branching or walk-off compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H01S5/02446—Cooling being separate from the laser chip cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
EP13772122.1A 2012-04-06 2013-04-05 Laser architectures Withdrawn EP2834890A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261621067P 2012-04-06 2012-04-06
US13/764,770 US20130208741A1 (en) 2012-02-13 2013-02-11 Laser architectures
PCT/US2013/035485 WO2013152310A1 (en) 2012-04-06 2013-04-05 Laser architectures

Publications (2)

Publication Number Publication Date
EP2834890A1 EP2834890A1 (en) 2015-02-11
EP2834890A4 true EP2834890A4 (en) 2015-12-16

Family

ID=49301093

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13772122.1A Withdrawn EP2834890A4 (en) 2012-04-06 2013-04-05 Laser architectures

Country Status (5)

Country Link
EP (1) EP2834890A4 (en)
KR (1) KR20140140637A (en)
CN (1) CN104364984A (en)
RU (1) RU2014144472A (en)
WO (1) WO2013152310A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106145021B (en) * 2015-03-26 2017-12-29 中科院南通光电工程中心 Optical micro/nano cavity resonator structure and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060280219A1 (en) * 2004-07-30 2006-12-14 Shchegrov Andrei V Frequency stabilized vertical extended cavity surface emitting lasers
US20070127107A1 (en) * 2003-11-20 2007-06-07 National Institute For Materials Science Wavelength conversion element having multi-gratings and light generating apparatus using said element, and wavelength conversion element having cylindrical ferroelectric single crystals and light generating apparatus using said element
US20070176179A1 (en) * 2006-01-10 2007-08-02 Samsung Electronics Co., Ltd. Vertical external cavity surface emitting laser including second harmonic generation crystal having mirror surface
US20100002735A1 (en) * 2008-07-04 2010-01-07 Seiko Epson Corporation Laser source device, wavelength conversion element, method of manufacturing wavelength conversion element, projector, and monitoring device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5327444A (en) * 1989-04-20 1994-07-05 Massachusetts Institute Of Technology Solid state waveguide lasers
US5164947A (en) * 1991-02-28 1992-11-17 Amoco Corporation Single-frequency, frequency doubled laser
US6370168B1 (en) * 1999-10-20 2002-04-09 Coherent, Inc. Intracavity frequency-converted optically-pumped semiconductor laser
US6953291B2 (en) * 2003-06-30 2005-10-11 Finisar Corporation Compact package design for vertical cavity surface emitting laser array to optical fiber cable connection
US7296897B2 (en) * 2004-07-30 2007-11-20 Novalux, Inc. Projection display apparatus, system, and method
RU2414695C2 (en) * 2004-12-10 2011-03-20 Конинклейке Филипс Электроникс Н.В. Multipoint analysis apparatus
US7907646B2 (en) * 2005-07-28 2011-03-15 Panasonic Corporation Laser light source and display device
US7630125B2 (en) * 2007-12-11 2009-12-08 Young Optics Inc. Laser module

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070127107A1 (en) * 2003-11-20 2007-06-07 National Institute For Materials Science Wavelength conversion element having multi-gratings and light generating apparatus using said element, and wavelength conversion element having cylindrical ferroelectric single crystals and light generating apparatus using said element
US20060280219A1 (en) * 2004-07-30 2006-12-14 Shchegrov Andrei V Frequency stabilized vertical extended cavity surface emitting lasers
US20070176179A1 (en) * 2006-01-10 2007-08-02 Samsung Electronics Co., Ltd. Vertical external cavity surface emitting laser including second harmonic generation crystal having mirror surface
US20100002735A1 (en) * 2008-07-04 2010-01-07 Seiko Epson Corporation Laser source device, wavelength conversion element, method of manufacturing wavelength conversion element, projector, and monitoring device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2013152310A1 *

Also Published As

Publication number Publication date
CN104364984A (en) 2015-02-18
KR20140140637A (en) 2014-12-09
WO2013152310A1 (en) 2013-10-10
EP2834890A1 (en) 2015-02-11
RU2014144472A (en) 2016-05-27

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Legal Events

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DAX Request for extension of the european patent (deleted)
RA4 Supplementary search report drawn up and despatched (corrected)

Effective date: 20151112

RIC1 Information provided on ipc code assigned before grant

Ipc: H01S 5/14 20060101AFI20151106BHEP

Ipc: H01S 5/183 20060101ALN20151106BHEP

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