EP2837047A4 - FUNCTIONALIZATION OF A SUBSTRATE - Google Patents

FUNCTIONALIZATION OF A SUBSTRATE

Info

Publication number
EP2837047A4
EP2837047A4 EP13775065.9A EP13775065A EP2837047A4 EP 2837047 A4 EP2837047 A4 EP 2837047A4 EP 13775065 A EP13775065 A EP 13775065A EP 2837047 A4 EP2837047 A4 EP 2837047A4
Authority
EP
European Patent Office
Prior art keywords
functionalization
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13775065.9A
Other languages
German (de)
French (fr)
Other versions
EP2837047A1 (en
Inventor
Michael Helander
Jacky Qiu
Zhibin Wang
Zheng-Hong Lu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OTI Lumionics Inc
Original Assignee
OTI Lumionics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CA2774591A external-priority patent/CA2774591C/en
Priority claimed from US13/446,927 external-priority patent/US8853070B2/en
Application filed by OTI Lumionics Inc filed Critical OTI Lumionics Inc
Publication of EP2837047A1 publication Critical patent/EP2837047A1/en
Publication of EP2837047A4 publication Critical patent/EP2837047A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/24—Nitriding
    • C23C8/26—Nitriding of ferrous surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • C23C8/38—Treatment of ferrous surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
EP13775065.9A 2012-04-13 2013-04-15 FUNCTIONALIZATION OF A SUBSTRATE Withdrawn EP2837047A4 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
CA2774591A CA2774591C (en) 2012-04-13 2012-04-13 Functionalization of a substrate
US13/446,927 US8853070B2 (en) 2012-04-13 2012-04-13 Functionalization of a substrate
US201261673147P 2012-07-18 2012-07-18
US201361806855P 2013-03-30 2013-03-30
PCT/CA2013/050291 WO2013152446A1 (en) 2012-04-13 2013-04-15 Functionalization of a substrate

Publications (2)

Publication Number Publication Date
EP2837047A1 EP2837047A1 (en) 2015-02-18
EP2837047A4 true EP2837047A4 (en) 2015-12-23

Family

ID=49326979

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13775065.9A Withdrawn EP2837047A4 (en) 2012-04-13 2013-04-15 FUNCTIONALIZATION OF A SUBSTRATE

Country Status (6)

Country Link
EP (1) EP2837047A4 (en)
JP (1) JP6412493B2 (en)
KR (1) KR102074255B1 (en)
CN (1) CN104272489A (en)
CA (1) CA2870236A1 (en)
WO (1) WO2013152446A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8853070B2 (en) 2012-04-13 2014-10-07 Oti Lumionics Inc. Functionalization of a substrate
US9698386B2 (en) 2012-04-13 2017-07-04 Oti Lumionics Inc. Functionalization of a substrate
JP2015133362A (en) * 2014-01-09 2015-07-23 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． Organic electroluminescent element
WO2016027793A1 (en) * 2014-08-21 2016-02-25 ソニー株式会社 Image-capturing element, solid-state image-capturing device, and electronic device
CN111537539A (en) * 2020-05-12 2020-08-14 西安交通大学 A method for measuring photoelectron spectroscopy of polymer sublayers using plasma etching
CN116249413A (en) * 2023-02-08 2023-06-09 中国科学院宁波材料技术与工程研究所 Surface reconstruction method and application of a transparent conductive oxide

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6164295A (en) * 1996-05-01 2000-12-26 Kabushiki Kaisha Toshiba CVD apparatus with high throughput and cleaning method therefor

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JP3631014B2 (en) * 1998-11-12 2005-03-23 出光興産株式会社 Organic EL display element and manufacturing method thereof
US6657378B2 (en) * 2001-09-06 2003-12-02 The Trustees Of Princeton University Organic photovoltaic devices
US20040018750A1 (en) * 2002-07-02 2004-01-29 Sophie Auguste J.L. Method for deposition of nitrogen doped silicon carbide films
US8512798B2 (en) * 2003-06-05 2013-08-20 Superpower, Inc. Plasma assisted metalorganic chemical vapor deposition (MOCVD) system
US7270848B2 (en) * 2004-11-23 2007-09-18 Tokyo Electron Limited Method for increasing deposition rates of metal layers from metal-carbonyl precursors
US7279421B2 (en) * 2004-11-23 2007-10-09 Tokyo Electron Limited Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
US7491431B2 (en) * 2004-12-20 2009-02-17 Nanogram Corporation Dense coating formation by reactive deposition
JP5095990B2 (en) * 2006-12-22 2012-12-12 東京エレクトロン株式会社 Substrate processing apparatus and cleaning method
JP2009123934A (en) * 2007-11-15 2009-06-04 Tokyo Electron Ltd Plasma processing equipment
JP5666300B2 (en) * 2008-07-22 2015-02-12 昭和電工株式会社 Method for manufacturing organic electroluminescence element with sealing member
GB0813491D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
US20120213940A1 (en) * 2010-10-04 2012-08-23 Applied Materials, Inc. Atomic layer deposition of silicon nitride using dual-source precursor and interleaved plasma

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6164295A (en) * 1996-05-01 2000-12-26 Kabushiki Kaisha Toshiba CVD apparatus with high throughput and cleaning method therefor

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
"Organic Light Emitting Diode - Material, Process and Devices", 27 July 2011, INTECH, ISBN: 978-953-30-7273-9, article SUNYOUNG SOHN ET AL: "Transparent Conductive Oxide (TCO) Films for Organic Light Emissive Devices (OLEDs)", pages: 233 - 274, XP055218546, DOI: 10.5772/18545 *
CHAN I-M ET AL: "Plasma treatments of indium tin oxide anodes in carbon tetrafluorinde (CF4)/oxygen (O2) to improve the performance of organic light-emitting diodes", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 444, no. 1-2, 15 October 2003 (2003-10-15), pages 254 - 259, XP004467881, ISSN: 0040-6090, DOI: 10.1016/S0040-6090(03)01197-0 *
JEONG C H ET AL: "CHARACTERISTICS OF ORGANIC LIGHT-EMITTING DEVICVES BY THE SURFACE TREATMENT OF INDIUM TIN OXIDE SURFACES USING ATMOSPHERIC PRESSURE PLASMAS", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 44, no. 1, 10 February 2004 (2004-02-10), pages L41 - L44, XP001502004, ISSN: 0021-4922, DOI: 10.1143/JJAP.44.L41 *
M. G. HELANDER ET AL: "Chlorinated Indium Tin Oxide Electrodes with High Work Function for Organic Device Compatibility", SCIENCE, vol. 332, no. 6032, 20 May 2011 (2011-05-20), US, pages 944 - 947, XP055218407, ISSN: 0036-8075, DOI: 10.1126/science.1202992 *
See also references of WO2013152446A1 *

Also Published As

Publication number Publication date
CN104272489A (en) 2015-01-07
JP6412493B2 (en) 2018-10-24
EP2837047A1 (en) 2015-02-18
JP2015522707A (en) 2015-08-06
WO2013152446A1 (en) 2013-10-17
KR102074255B1 (en) 2020-02-06
CA2870236A1 (en) 2013-10-17
KR20150002812A (en) 2015-01-07

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