EP2862206A4 - Multilayer substrate structure and method and system of manufacturing the same - Google Patents

Multilayer substrate structure and method and system of manufacturing the same

Info

Publication number
EP2862206A4
EP2862206A4 EP13803800.5A EP13803800A EP2862206A4 EP 2862206 A4 EP2862206 A4 EP 2862206A4 EP 13803800 A EP13803800 A EP 13803800A EP 2862206 A4 EP2862206 A4 EP 2862206A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
same
multilayer substrate
substrate structure
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13803800.5A
Other languages
German (de)
French (fr)
Other versions
EP2862206A2 (en
Inventor
Indranil De
Francisco Machuca
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tivra Corp
Original Assignee
Tivra Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/794,285 external-priority patent/US20130333611A1/en
Priority claimed from US13/794,372 external-priority patent/US9879357B2/en
Application filed by Tivra Corp filed Critical Tivra Corp
Publication of EP2862206A2 publication Critical patent/EP2862206A2/en
Publication of EP2862206A4 publication Critical patent/EP2862206A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
EP13803800.5A 2012-06-14 2013-06-12 Multilayer substrate structure and method and system of manufacturing the same Withdrawn EP2862206A4 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201261659944P 2012-06-14 2012-06-14
US201261662918P 2012-06-22 2012-06-22
US13/794,285 US20130333611A1 (en) 2012-06-14 2013-03-11 Lattice matching layer for use in a multilayer substrate structure
US13/794,327 US8956952B2 (en) 2012-06-14 2013-03-11 Multilayer substrate structure and method of manufacturing the same
US13/794,372 US9879357B2 (en) 2013-03-11 2013-03-11 Methods and systems for thin film deposition processes
PCT/US2013/045482 WO2013188574A2 (en) 2012-06-14 2013-06-12 Multilayer substrate structure and method and system of manufacturing the same

Publications (2)

Publication Number Publication Date
EP2862206A2 EP2862206A2 (en) 2015-04-22
EP2862206A4 true EP2862206A4 (en) 2015-12-30

Family

ID=49758884

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13803800.5A Withdrawn EP2862206A4 (en) 2012-06-14 2013-06-12 Multilayer substrate structure and method and system of manufacturing the same

Country Status (6)

Country Link
EP (1) EP2862206A4 (en)
JP (1) JP6450675B2 (en)
KR (1) KR20150047474A (en)
CN (1) CN104781938B (en)
TW (1) TWI518747B (en)
WO (1) WO2013188574A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9487885B2 (en) 2012-06-14 2016-11-08 Tivra Corporation Substrate structures and methods
US9879357B2 (en) 2013-03-11 2018-01-30 Tivra Corporation Methods and systems for thin film deposition processes
US9379190B2 (en) * 2014-05-08 2016-06-28 Flosfia, Inc. Crystalline multilayer structure and semiconductor device
CN106057643A (en) * 2016-05-27 2016-10-26 清华大学 Semiconductor structure and method for preparing semiconductor structure
CN106057641A (en) * 2016-05-27 2016-10-26 清华大学 Semiconductor structure and method for preparing semiconductor structure
WO2019019054A1 (en) * 2017-07-26 2019-01-31 Shenzhen Xpectvision Technology Co., Ltd. Radiation detector with built-in depolarization device
WO2019025082A1 (en) 2017-08-03 2019-02-07 Asml Netherlands B.V. Simultaneous double-side coating of multilayer graphene pellicle by local thermal processing
JP7159449B2 (en) * 2019-03-28 2022-10-24 日本碍子株式会社 Underlying substrate and manufacturing method thereof
JP7283273B2 (en) * 2019-07-01 2023-05-30 株式会社レゾナック MAGNETIC RECORDING MEDIUM, MANUFACTURING METHOD THEREOF, AND MAGNETIC RECORDING/PLAYBACK APPARATUS
DE102020107944B4 (en) * 2020-03-23 2024-12-19 Rheinische Friedrich-Wilhelms-Universität Bonn Körperschaft des öffentlichen Rechts Method for producing a continuous diffractive optical element and continuous diffractive optical element
WO2022066741A2 (en) * 2020-09-22 2022-03-31 Truvian Sciences, Inc. Methods for bonding plastics and components made by the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007094516A1 (en) * 2006-02-16 2007-08-23 Showa Denko K.K. GaN-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR THE FABRICATION THEREOF
JP2007294579A (en) * 2006-04-24 2007-11-08 Showa Denko Kk GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SAME, AND LAMP
US20080164570A1 (en) * 2007-01-04 2008-07-10 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Zirconium and Hafnium Boride Alloy Templates on Silicon for Nitride Integration Applications

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
US3374407A (en) * 1964-06-01 1968-03-19 Rca Corp Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic
US4222345A (en) * 1978-11-30 1980-09-16 Optical Coating Laboratory, Inc. Vacuum coating apparatus with rotary motion assembly
FR2629637B1 (en) * 1988-04-05 1990-11-16 Thomson Csf METHOD FOR PRODUCING AN ALTERNATION OF LAYERS OF SINGLE-CRYSTAL SEMICONDUCTOR MATERIAL AND LAYERS OF INSULATING MATERIAL
US5597411A (en) * 1991-02-19 1997-01-28 Energy Conversion Devices, Inc. Method of forming a single crystal material
TW272319B (en) * 1993-12-20 1996-03-11 Sharp Kk
US5906857A (en) * 1997-05-13 1999-05-25 Ultratherm, Inc. Apparatus, system and method for controlling emission parameters attending vaporized in a HV environment
EP0996967B1 (en) * 1997-06-30 2008-11-19 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Method for producing layered structures on a semiconductor substrate, semiconductor substrate and semiconductor components produced according to said method
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
AU2002228598A1 (en) * 2000-11-20 2002-06-03 Parallel Synthesis Technologies, Inc. Methods and devices for high throughput crystallization
US20030017626A1 (en) * 2001-07-23 2003-01-23 Motorola Inc. Method and apparatus for controlling propagation of dislocations in semiconductor structures and devices
US6898224B2 (en) * 2001-08-22 2005-05-24 The Furukawa Electric Co., Ltd. Semiconductor laser device
JP2003142781A (en) * 2001-08-22 2003-05-16 Furukawa Electric Co Ltd:The Semiconductor laser device
TW591202B (en) * 2001-10-26 2004-06-11 Hermosa Thin Film Co Ltd Dynamic film thickness control device/method and ITS coating method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007094516A1 (en) * 2006-02-16 2007-08-23 Showa Denko K.K. GaN-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR THE FABRICATION THEREOF
JP2007294579A (en) * 2006-04-24 2007-11-08 Showa Denko Kk GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SAME, AND LAMP
US20080164570A1 (en) * 2007-01-04 2008-07-10 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Zirconium and Hafnium Boride Alloy Templates on Silicon for Nitride Integration Applications

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
C RODER ET AL: "Temperature dependence of the thermal expansion of GaN", PHYSICAL REVIEW B, 1 August 2005 (2005-08-01), XP055492595, Retrieved from the Internet <URL:http://hasyweb.desy.de/science/annual_reports/1998/part1/contrib/24/1469.pdf> [retrieved on 20180713], DOI: 10.1103/PhysRevB.72.085218 *
See also references of WO2013188574A2 *

Also Published As

Publication number Publication date
TWI518747B (en) 2016-01-21
CN104781938B (en) 2018-06-26
EP2862206A2 (en) 2015-04-22
JP2015526368A (en) 2015-09-10
JP6450675B2 (en) 2019-01-09
CN104781938A (en) 2015-07-15
WO2013188574A3 (en) 2014-05-08
TW201405636A (en) 2014-02-01
WO2013188574A2 (en) 2013-12-19
KR20150047474A (en) 2015-05-04

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Legal Events

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PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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A4 Supplementary search report drawn up and despatched

Effective date: 20151126

RIC1 Information provided on ipc code assigned before grant

Ipc: C30B 23/02 20060101ALI20151120BHEP

Ipc: C30B 25/18 20060101ALI20151120BHEP

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Ipc: C30B 29/40 20060101ALI20151120BHEP

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