EP3335242A4 - SEMICONDUCTOR STRUCTURE WITH SPACING LAYER - Google Patents

SEMICONDUCTOR STRUCTURE WITH SPACING LAYER Download PDF

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Publication number
EP3335242A4
EP3335242A4 EP16835909.9A EP16835909A EP3335242A4 EP 3335242 A4 EP3335242 A4 EP 3335242A4 EP 16835909 A EP16835909 A EP 16835909A EP 3335242 A4 EP3335242 A4 EP 3335242A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor structure
spacing layer
spacing
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP16835909.9A
Other languages
German (de)
French (fr)
Other versions
EP3335242A1 (en
Inventor
Mohamed AZIZE
Bin Lu
Ling Xia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambridge Electronics Inc
Original Assignee
Cambridge Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/094,985 external-priority patent/US9502535B2/en
Application filed by Cambridge Electronics Inc filed Critical Cambridge Electronics Inc
Publication of EP3335242A1 publication Critical patent/EP3335242A1/en
Publication of EP3335242A4 publication Critical patent/EP3335242A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs
EP16835909.9A 2015-08-11 2016-08-11 SEMICONDUCTOR STRUCTURE WITH SPACING LAYER Withdrawn EP3335242A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562203438P 2015-08-11 2015-08-11
US15/094,985 US9502535B2 (en) 2015-04-10 2016-04-08 Semiconductor structure and etch technique for monolithic integration of III-N transistors
PCT/US2016/046546 WO2017027704A1 (en) 2015-08-11 2016-08-11 Semiconductor structure with a spacer layer

Publications (2)

Publication Number Publication Date
EP3335242A1 EP3335242A1 (en) 2018-06-20
EP3335242A4 true EP3335242A4 (en) 2019-04-10

Family

ID=57984111

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16835909.9A Withdrawn EP3335242A4 (en) 2015-08-11 2016-08-11 SEMICONDUCTOR STRUCTURE WITH SPACING LAYER

Country Status (3)

Country Link
EP (1) EP3335242A4 (en)
CN (1) CN107924939A (en)
WO (1) WO2017027704A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102783947B1 (en) * 2018-11-07 2025-03-18 엘지디스플레이 주식회사 Display apparatus
CN110047979B (en) * 2019-02-20 2020-10-09 华灿光电(苏州）有限公司 Ultraviolet light emitting diode epitaxial wafer and method of making the same
CN110444599A (en) * 2019-08-05 2019-11-12 中国电子科技集团公司第十三研究所 GaN base heterojunction field effect transistor and its manufacturing method
CN110444600A (en) * 2019-08-05 2019-11-12 中国电子科技集团公司第十三研究所 GaN base heterojunction field effect transistor and manufacturing method
CN110335898A (en) * 2019-08-05 2019-10-15 中国电子科技集团公司第十三研究所 GaN-based heterojunction field effect transistor and manufacturing method
US11721743B2 (en) * 2020-12-22 2023-08-08 Applied Materials, Inc. Implantation enabled precisely controlled source and drain etch depth
CN112928022B (en) * 2021-01-29 2023-07-25 中国科学院微电子研究所 High electron field effect transistor and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080237605A1 (en) * 2007-03-29 2008-10-02 Tomohiro Murata Semiconductor device and manufacturing method of the same
US20130256829A1 (en) * 2012-03-29 2013-10-03 Fujitsu Limited Compound semiconductor device and method of manufacturing the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3785970B2 (en) * 2001-09-03 2006-06-14 日本電気株式会社 Method for manufacturing group III nitride semiconductor device
US7470967B2 (en) * 2004-03-12 2008-12-30 Semisouth Laboratories, Inc. Self-aligned silicon carbide semiconductor devices and methods of making the same
US7709859B2 (en) * 2004-11-23 2010-05-04 Cree, Inc. Cap layers including aluminum nitride for nitride-based transistors
KR100620393B1 (en) * 2005-11-03 2006-09-06 한국전자통신연구원 Field effect transistor and its manufacturing method
US7388236B2 (en) * 2006-03-29 2008-06-17 Cree, Inc. High efficiency and/or high power density wide bandgap transistors
US20080258135A1 (en) * 2007-04-19 2008-10-23 Hoke William E Semiconductor structure having plural back-barrier layers for improved carrier confinement
JP2009060042A (en) * 2007-09-03 2009-03-19 Asahi Kasei Electronics Co Ltd Semiconductor device
US7985986B2 (en) * 2008-07-31 2011-07-26 Cree, Inc. Normally-off semiconductor devices
WO2011118099A1 (en) * 2010-03-26 2011-09-29 日本電気株式会社 Field effect transistor, method of manufacture for field effect transistor, and electronic device
US8659030B2 (en) * 2011-02-28 2014-02-25 International Rectifier Corporation III-nitride heterojunction devices having a multilayer spacer
EP2793255B8 (en) * 2013-04-16 2018-01-17 IMEC vzw Manufacturing method of a semiconductor device comprising a schottky diode and a high electron mobility transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080237605A1 (en) * 2007-03-29 2008-10-02 Tomohiro Murata Semiconductor device and manufacturing method of the same
US20130256829A1 (en) * 2012-03-29 2013-10-03 Fujitsu Limited Compound semiconductor device and method of manufacturing the same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
See also references of WO2017027704A1 *
TETSU KACHI ET AL: "GaN power device and reliability for automotive applications", RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012 IEEE INTERNATIONAL, IEEE, 15 April 2012 (2012-04-15), pages 3D.1.1 - 3D.1.4, XP032204901, ISBN: 978-1-4577-1678-2, DOI: 10.1109/IRPS.2012.6241815 *

Also Published As

Publication number Publication date
CN107924939A (en) 2018-04-17
WO2017027704A1 (en) 2017-02-16
EP3335242A1 (en) 2018-06-20

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