EP3482469A4 - OPTICAL TRANSMITTER WITH DIFFRACTION NETWORK - Google Patents

OPTICAL TRANSMITTER WITH DIFFRACTION NETWORK Download PDF

Info

Publication number
EP3482469A4
EP3482469A4 EP17824804.3A EP17824804A EP3482469A4 EP 3482469 A4 EP3482469 A4 EP 3482469A4 EP 17824804 A EP17824804 A EP 17824804A EP 3482469 A4 EP3482469 A4 EP 3482469A4
Authority
EP
European Patent Office
Prior art keywords
optical transmitter
diffraction network
diffraction
network
transmitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP17824804.3A
Other languages
German (de)
French (fr)
Other versions
EP3482469A1 (en
Inventor
Shu-Lu Chen
Yun-Chung Na
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forelux Inc
Original Assignee
Forelux Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/201,907 external-priority patent/US10386581B2/en
Application filed by Forelux Inc filed Critical Forelux Inc
Publication of EP3482469A1 publication Critical patent/EP3482469A1/en
Publication of EP3482469A4 publication Critical patent/EP3482469A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
EP17824804.3A 2016-07-05 2017-07-05 OPTICAL TRANSMITTER WITH DIFFRACTION NETWORK Withdrawn EP3482469A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/201,907 US10386581B2 (en) 2013-10-25 2016-07-05 Grating based optical transmitter
PCT/US2017/040712 WO2018009538A1 (en) 2016-07-05 2017-07-05 Grating based optical transmitter

Publications (2)

Publication Number Publication Date
EP3482469A1 EP3482469A1 (en) 2019-05-15
EP3482469A4 true EP3482469A4 (en) 2019-07-10

Family

ID=60912280

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17824804.3A Withdrawn EP3482469A4 (en) 2016-07-05 2017-07-05 OPTICAL TRANSMITTER WITH DIFFRACTION NETWORK

Country Status (3)

Country Link
EP (1) EP3482469A4 (en)
CN (1) CN110301075B (en)
WO (1) WO2018009538A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10921525B2 (en) * 2018-11-30 2021-02-16 Mitsubishi Electric Research Laboratories, Inc. Grating coupler and integrated grating coupler system
CN114815056B (en) * 2022-04-18 2023-06-27 扬州大学 Sandwich efficient emission grating antenna based on staggered offset and manufacturing method thereof
CN116165144A (en) * 2023-01-19 2023-05-26 南京理工大学 Real-time measurement device and method for microstructure dispersion curve

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2913902A1 (en) * 2014-02-28 2015-09-02 Forelux Inc. Grating based optical transmitter

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63111689A (en) * 1986-10-29 1988-05-16 Mitsubishi Electric Corp Distributed feedback type semiconductor laser
JPS63318185A (en) * 1987-06-22 1988-12-27 Toshiba Corp Distributed feedback semiconductor laser
JP2692913B2 (en) * 1987-12-19 1997-12-17 株式会社東芝 Grating coupled surface emitting laser device and modulation method thereof
US4894833A (en) * 1988-08-09 1990-01-16 General Electric Company Surface emitting lasers with combined output
US5970081A (en) * 1996-09-17 1999-10-19 Kabushiki Kaisha Toshiba Grating coupled surface emitting device
US6775427B2 (en) * 2001-03-09 2004-08-10 Photodigm, Inc. Laterally coupled wave guides
US7457340B2 (en) * 2002-01-18 2008-11-25 Wisconsin Alumni Research Foundation High coherent power, two-dimensional surface-emitting semiconductor diode array laser
US7515785B2 (en) * 2003-01-15 2009-04-07 Fujikura Ltd. Dispersion compensation element, optical crystal, dispersion compensation system, dispersion compensation method
WO2006046347A1 (en) * 2004-10-29 2006-05-04 Bussan Nanotech Research Institute Inc. Dispersion compensation element
JP4312239B2 (en) * 2007-02-16 2009-08-12 富士通株式会社 Optical element and manufacturing method thereof
JP5070161B2 (en) * 2007-08-31 2012-11-07 独立行政法人科学技術振興機構 Photonic crystal laser
JP5521510B2 (en) * 2009-11-27 2014-06-18 株式会社豊田中央研究所 Optical deflection element
WO2011106551A2 (en) * 2010-02-24 2011-09-01 The Regents Of The University Of California Hcg reflection enhancement in diverse refractive index material
JP6305056B2 (en) * 2013-01-08 2018-04-04 ローム株式会社 Two-dimensional photonic crystal surface emitting laser
WO2015008627A1 (en) * 2013-07-16 2015-01-22 浜松ホトニクス株式会社 Semiconductor laser device
CN103762497A (en) * 2013-11-06 2014-04-30 南京大学 Reconstruction-equivalent chirp and equivalent half apodization-based DFB semiconductor laser and preparation method thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2913902A1 (en) * 2014-02-28 2015-09-02 Forelux Inc. Grating based optical transmitter

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DAN BOTEZ ET AL: "Analysis of surface-emitting second-order distributed feedback lasers with central grating phaseshift", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 9, no. 5, 1 September 2003 (2003-09-01), pages 1153 - 1165, XP011106603, ISSN: 1077-260X, DOI: 10.1109/JSTQE.2003.819467 *
See also references of WO2018009538A1 *

Also Published As

Publication number Publication date
CN110301075A (en) 2019-10-01
WO2018009538A1 (en) 2018-01-11
EP3482469A1 (en) 2019-05-15
CN110301075B (en) 2021-05-07

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