EP3612608A4 - SELF-STOP POLISHING COMPOSITION AND BULK OXIDE PLANARIZATION PROCESS - Google Patents

SELF-STOP POLISHING COMPOSITION AND BULK OXIDE PLANARIZATION PROCESS Download PDF

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Publication number
EP3612608A4
EP3612608A4 EP18788475.4A EP18788475A EP3612608A4 EP 3612608 A4 EP3612608 A4 EP 3612608A4 EP 18788475 A EP18788475 A EP 18788475A EP 3612608 A4 EP3612608 A4 EP 3612608A4
Authority
EP
European Patent Office
Prior art keywords
self
polishing composition
planarization process
bulk oxide
stop polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18788475.4A
Other languages
German (de)
French (fr)
Other versions
EP3612608A1 (en
Inventor
Alexander W. Hains
Juyeon Chang
Tina C. Li
Viet LAM
Ji Cui
Sarah Brosnan
Chul Woo Nam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of EP3612608A1 publication Critical patent/EP3612608A1/en
Publication of EP3612608A4 publication Critical patent/EP3612608A4/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
EP18788475.4A 2017-04-17 2018-03-23 SELF-STOP POLISHING COMPOSITION AND BULK OXIDE PLANARIZATION PROCESS Pending EP3612608A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762486219P 2017-04-17 2017-04-17
PCT/US2018/024067 WO2018194792A1 (en) 2017-04-17 2018-03-23 Self-stopping polishing composition and method for bulk oxide planarization

Publications (2)

Publication Number Publication Date
EP3612608A1 EP3612608A1 (en) 2020-02-26
EP3612608A4 true EP3612608A4 (en) 2021-01-20

Family

ID=63856438

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18788475.4A Pending EP3612608A4 (en) 2017-04-17 2018-03-23 SELF-STOP POLISHING COMPOSITION AND BULK OXIDE PLANARIZATION PROCESS

Country Status (6)

Country Link
EP (1) EP3612608A4 (en)
JP (1) JP7132942B2 (en)
KR (1) KR102671229B1 (en)
CN (2) CN113637412A (en)
TW (1) TWI663231B (en)
WO (1) WO2018194792A1 (en)

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JP7220522B2 (en) * 2018-05-24 2023-02-10 株式会社バイコウスキージャパン Abrasive grains, manufacturing method thereof, polishing slurry containing the same, and polishing method using the same
KR20220090534A (en) * 2019-10-22 2022-06-29 씨엠씨 머티리얼즈, 인코포레이티드 Compositions and methods for dielectric CMP
CN114585699A (en) * 2019-10-22 2022-06-03 Cmc材料股份有限公司 Self-stopping polishing compositions and methods
TWI764338B (en) 2019-10-22 2022-05-11 美商Ｃｍｃ材料股份有限公司 Composition and method for silicon oxide and carbon doped silicon oxide cmp
TWI767355B (en) * 2019-10-24 2022-06-11 美商慧盛材料美國責任有限公司 High oxide removal rates shallow trench isolation chemical mechanical planarization compositions, system and method
CN113004798B (en) * 2019-12-19 2024-04-12 安集微电子（上海）有限公司 Chemical mechanical polishing solution
JP7409918B2 (en) * 2020-03-13 2024-01-09 株式会社フジミインコーポレーテッド Polishing composition, method for producing polishing composition, polishing method, and method for producing semiconductor substrate
CN114621684B (en) * 2020-12-11 2026-04-14 安集微电子（上海）有限公司 Chemical mechanical polishing solution and application method thereof
CN114621683A (en) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 Chemical mechanical polishing solution and use method thereof
CN117120563B (en) * 2020-12-21 2026-03-27 Cmc材料有限责任公司 Self-stopping polishing composition and method for high morphology selectivity
CN114686107B (en) * 2020-12-30 2026-03-31 安集微电子（上海）有限公司 A chemical mechanical polishing slurry for tungsten polishing
WO2023013059A1 (en) * 2021-08-06 2023-02-09 昭和電工マテリアルズ株式会社 Cmp polishing liquid, cmp polishing liquid set, and polishing method
KR102891602B1 (en) * 2021-12-03 2025-11-25 삼성에스디아이 주식회사 Method of forming patterns
US20230242790A1 (en) * 2022-02-03 2023-08-03 Cmc Materials, Inc. Ceria-based slurry compositions for selective and nonselective cmp of silicon oxide, silicon nitride, and polysilicon
US20230242791A1 (en) * 2022-02-03 2023-08-03 Cmc Materials, Inc. Ceria-based slurry compositions for selective and nonselective cmp of silicon oxide, silicon nitride, and polysilicon
CN115160933B (en) * 2022-07-27 2023-11-28 河北工业大学 Alkaline polishing solution for cobalt CMP of cobalt interconnection integrated circuit and preparation method thereof
CN117987013A (en) * 2022-11-01 2024-05-07 中国科学院大连化学物理研究所 A cerium hydroxide and cerium oxide polishing liquid and its preparation and application
WO2024111032A1 (en) * 2022-11-21 2024-05-30 株式会社レゾナック Cmp polishing liquid, cmp polishing liquid set, and polishing method
EP4657505A4 (en) * 2023-02-02 2026-03-25 Resonac Corp Polishing fluid, polishing process, component manufacturing process and semiconductor component manufacturing process
KR20250140549A (en) * 2023-02-02 2025-09-25 가부시끼가이샤 레조낙 Polishing liquid, polishing liquid set, polishing method, manufacturing method of parts, and manufacturing method of semiconductor parts
KR20250139312A (en) * 2023-02-02 2025-09-23 가부시끼가이샤 레조낙 Polishing liquid, polishing liquid set, polishing method, manufacturing method of parts, and manufacturing method of semiconductor parts
CN116716047B (en) * 2023-06-20 2026-02-10 万华化学集团电子材料有限公司 A chemical mechanical polishing slurry for silicon wafers, its preparation method and its application
WO2025111136A1 (en) * 2023-11-21 2025-05-30 Versum Materials Us, Llc Eco-friendly biocides for chemical mechanical planarization (cmp) polishing compositions
CN118146694B (en) * 2024-03-05 2025-12-05 江苏进华重防腐涂料有限公司 Epoxy pipe paint for cast iron pipes and fittings used in building drainage and its preparation method

Citations (2)

* Cited by examiner, † Cited by third party
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KR20140085265A (en) * 2012-12-27 2014-07-07 제일모직주식회사 Cmp slurry composition and polishing method using the same
WO2017011451A1 (en) * 2015-07-13 2017-01-19 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate

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US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20060096179A1 (en) * 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
US20110045741A1 (en) * 2005-04-28 2011-02-24 Techno Semichem Co., Ltd. Auto-Stopping Abrasive Composition for Polishing High Step Height Oxide Layer
KR100661273B1 (en) * 2005-04-28 2006-12-26 테크노세미켐 주식회사 Chemical Mechanical Polishing Composition for Flattening High Step Oxide Films
JP2009094233A (en) * 2007-10-05 2009-04-30 Showa Denko Kk Polishing composition for semiconductor substrate
JP5518869B2 (en) * 2008-09-12 2014-06-11 フエロ コーポレーション Chemical mechanical polishing composition, method for producing the same, and method for using the same
TWI472601B (en) * 2009-12-31 2015-02-11 第一毛織股份有限公司 Chemical mechanical polishing slurry composition and polishing method using the same
WO2012032467A1 (en) * 2010-09-08 2012-03-15 Basf Se Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films
JP6222907B2 (en) * 2012-09-06 2017-11-01 株式会社フジミインコーポレーテッド Polishing composition
US20160122696A1 (en) * 2013-05-17 2016-05-05 Advanced Technology Materials, Inc. Compositions and methods for removing ceria particles from a surface
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
US9434859B2 (en) * 2013-09-24 2016-09-06 Cabot Microelectronics Corporation Chemical-mechanical planarization of polymer films
US9340706B2 (en) * 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
KR101524624B1 (en) * 2013-11-18 2015-06-03 주식회사 케이씨텍 Additive composition of high aspect ratio polishing slurry and high aspect ratio polishing slurry composition comprising the same
US9735030B2 (en) * 2014-09-05 2017-08-15 Fujifilm Planar Solutions, LLC Polishing compositions and methods for polishing cobalt films
KR102426915B1 (en) * 2014-12-24 2022-08-02 솔브레인 주식회사 Chemical mechanical polishing composition, chemical mechanical polishing method for a low-k dielectric film and method of preparing semiconductor device
US9758697B2 (en) * 2015-03-05 2017-09-12 Cabot Microelectronics Corporation Polishing composition containing cationic polymer additive
JP6989493B2 (en) * 2015-09-03 2022-01-05 シーエムシー マテリアルズ，インコーポレイティド Methods and Compositions for Machining Dielectric Substrates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140085265A (en) * 2012-12-27 2014-07-07 제일모직주식회사 Cmp slurry composition and polishing method using the same
WO2017011451A1 (en) * 2015-07-13 2017-01-19 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2018194792A1 *

Also Published As

Publication number Publication date
TW201839077A (en) 2018-11-01
TWI663231B (en) 2019-06-21
CN113637412A (en) 2021-11-12
CN110520493A (en) 2019-11-29
CN110520493B (en) 2022-11-22
WO2018194792A1 (en) 2018-10-25
JP7132942B2 (en) 2022-09-07
JP2020517117A (en) 2020-06-11
EP3612608A1 (en) 2020-02-26
KR20190132537A (en) 2019-11-27
KR102671229B1 (en) 2024-06-03

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