EP3618430A4 - SEMICONDUCTOR IMAGE CAPTURE DEVICE AND ELECTRONIC INSTRUMENT - Google Patents

SEMICONDUCTOR IMAGE CAPTURE DEVICE AND ELECTRONIC INSTRUMENT Download PDF

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Publication number
EP3618430A4
EP3618430A4 EP18790913.0A EP18790913A EP3618430A4 EP 3618430 A4 EP3618430 A4 EP 3618430A4 EP 18790913 A EP18790913 A EP 18790913A EP 3618430 A4 EP3618430 A4 EP 3618430A4
Authority
EP
European Patent Office
Prior art keywords
image capture
capture device
electronic instrument
semiconductor image
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP18790913.0A
Other languages
German (de)
French (fr)
Other versions
EP3618430B1 (en
EP3618430A1 (en
Inventor
Daisuke Miyakoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Group Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to EP22151852.5A priority Critical patent/EP4027640B1/en
Publication of EP3618430A1 publication Critical patent/EP3618430A1/en
Publication of EP3618430A4 publication Critical patent/EP3618430A4/en
Application granted granted Critical
Publication of EP3618430B1 publication Critical patent/EP3618430B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/04—Mountings, adjusting means, or light-tight connections, for optical elements for lenses with mechanism for focusing or varying magnification
    • G02B7/09—Mountings, adjusting means, or light-tight connections, for optical elements for lenses with mechanism for focusing or varying magnification adapted for automatic focusing or varying magnification
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/34—Systems for automatic generation of focusing signals using different areas in a pupil plane
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H04N25/589—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields with different integration times, e.g. short and long exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H04N25/633—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current by using optical black pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/706—Pixels for exposure or ambient light measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
  • Solid State Image Pick-Up Elements (AREA)
EP18790913.0A 2017-04-25 2018-04-11 Solid-state image capturing device and electronic instrument Active EP3618430B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP22151852.5A EP4027640B1 (en) 2017-04-25 2018-04-11 Solid state image sensor and electronic equipment

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017085906 2017-04-25
PCT/JP2018/015157 WO2018198766A1 (en) 2017-04-25 2018-04-11 Solid-state image capturing device and electronic instrument

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP22151852.5A Division EP4027640B1 (en) 2017-04-25 2018-04-11 Solid state image sensor and electronic equipment

Publications (3)

Publication Number Publication Date
EP3618430A1 EP3618430A1 (en) 2020-03-04
EP3618430A4 true EP3618430A4 (en) 2020-03-04
EP3618430B1 EP3618430B1 (en) 2022-02-09

Family

ID=63919711

Family Applications (2)

Application Number Title Priority Date Filing Date
EP22151852.5A Active EP4027640B1 (en) 2017-04-25 2018-04-11 Solid state image sensor and electronic equipment
EP18790913.0A Active EP3618430B1 (en) 2017-04-25 2018-04-11 Solid-state image capturing device and electronic instrument

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP22151852.5A Active EP4027640B1 (en) 2017-04-25 2018-04-11 Solid state image sensor and electronic equipment

Country Status (4)

Country Link
US (3) US11233957B2 (en)
EP (2) EP4027640B1 (en)
JP (1) JP7099446B2 (en)
WO (1) WO2018198766A1 (en)

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JP5999750B2 (en) * 2011-08-25 2016-09-28 ソニー株式会社 Imaging device, imaging apparatus, and biological imaging apparatus
WO2019073814A1 (en) * 2017-10-13 2019-04-18 ソニー株式会社 Focal point detection device, method therefor, and program
CN111436209A (en) * 2018-11-12 2020-07-21 深圳市汇顶科技股份有限公司 Optical sensing device and terminal
WO2020262193A1 (en) * 2019-06-25 2020-12-30 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device and electronic apparatus
CN114208154B (en) * 2019-09-24 2026-03-20 索尼半导体解决方案公司 Imaging device
CN114793262B (en) * 2021-01-26 2024-06-14 华为技术有限公司 Image sensor, camera, electronic device and control method
KR102890135B1 (en) * 2021-03-10 2025-11-21 삼성전자 주식회사 Image sensor and Camera Module including the same
US11706537B2 (en) * 2021-05-11 2023-07-18 Omnivision Technologies, Inc. Image sensor and method for reading out signal of image sensor
WO2023105916A1 (en) * 2021-12-08 2023-06-15 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging element, imaging device, and method for controlling solid-state imaging element
KR20240014226A (en) 2022-07-25 2024-02-01 삼성전자주식회사 Image sensor including phase detection pixel
JPWO2024084930A1 (en) * 2022-10-17 2024-04-25
JP2025006152A (en) * 2023-06-29 2025-01-17 キヤノン株式会社 Photoelectric conversion device, equipment, and signal processing method
KR20250025879A (en) * 2023-08-16 2025-02-25 에스케이하이닉스 주식회사 Semiconductor device for performing light-based computation and operation method of semiconductor device
EP4528817B1 (en) * 2023-09-19 2026-01-14 Gpixel NV Phase detection autofocus pixel
CN120658944A (en) * 2024-03-14 2025-09-16 华为技术有限公司 Image shooting method and electronic equipment

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US20140085516A1 (en) * 2012-09-24 2014-03-27 Kabushiki Kaisha Toshiba Solid state image pickup device, camera module, and digital camera
US20150109498A1 (en) * 2012-07-06 2015-04-23 Fujifilm Corporation Imaging device, and image processing method
US20160276396A1 (en) * 2013-12-12 2016-09-22 Sony Corporation Solid state imaging device, manufacturing method of the same, and electronic equipment

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US20120212654A1 (en) * 2011-02-18 2012-08-23 Canon Kabushiki Kaisha Image pickup apparatus, focus detection method, image generation method, and storage medium
US20150109498A1 (en) * 2012-07-06 2015-04-23 Fujifilm Corporation Imaging device, and image processing method
US20140085516A1 (en) * 2012-09-24 2014-03-27 Kabushiki Kaisha Toshiba Solid state image pickup device, camera module, and digital camera
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Non-Patent Citations (1)

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Also Published As

Publication number Publication date
EP3618430B1 (en) 2022-02-09
US11637975B2 (en) 2023-04-25
JP7099446B2 (en) 2022-07-12
WO2018198766A1 (en) 2018-11-01
EP4027640A1 (en) 2022-07-13
US20220132058A1 (en) 2022-04-28
US20210105423A1 (en) 2021-04-08
JPWO2018198766A1 (en) 2020-02-27
EP3618430A1 (en) 2020-03-04
US20230239589A1 (en) 2023-07-27
EP4027640B1 (en) 2024-08-14
US12184999B2 (en) 2024-12-31
US11233957B2 (en) 2022-01-25

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