EP3673510A4 - STORAGE ARRAYS WITH STORAGE CELLS - Google Patents

STORAGE ARRAYS WITH STORAGE CELLS Download PDF

Info

Publication number: EP3673510A4
Authority: EP; European Patent Office
Prior art keywords: storage; arrays; cells; storage cells; storage arrays
Prior art date: 2018-11-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP18925720.7A

Other languages

German (de)

French (fr)

Other versions

EP3673510A1 (en

EP3673510B1 (en

Inventor

Sanh D. Tang

Martin C. ROBERTS

Gurtej S. Sandhu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Micron Technology Inc

Original Assignee

Micron Technology Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2018-11-15

Filing date

2018-11-19

Publication date

2020-07-08

2018-11-15 Priority claimed from US16/192,462 external-priority patent/US11043499B2/en

2018-11-19 Application filed by Micron Technology Inc filed Critical Micron Technology Inc

2020-07-01 Publication of EP3673510A1 publication Critical patent/EP3673510A1/en

2020-07-08 Publication of EP3673510A4 publication Critical patent/EP3673510A4/en

2024-09-25 Application granted granted Critical

2024-09-25 Publication of EP3673510B1 publication Critical patent/EP3673510B1/en

Status Active legal-status Critical Current

2038-11-19 Anticipated expiration legal-status Critical

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels

EP18925720.7A 2018-11-15 2018-11-19 Memory arrays comprising memory cells Active EP3673510B1 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US16/192,462 US11043499B2 (en)	2017-07-27	2018-11-15	Memory arrays comprising memory cells
PCT/US2018/061749 WO2020101715A1 (en)	2018-11-15	2018-11-19	Memory arrays comprising memory cells

Publications (3)

Publication Number	Publication Date
EP3673510A1 EP3673510A1 (en)	2020-07-01
EP3673510A4 true EP3673510A4 (en)	2020-07-08
EP3673510B1 EP3673510B1 (en)	2024-09-25

Family

ID=69593520

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP18925720.7A Active EP3673510B1 (en)	2018-11-15	2018-11-19	Memory arrays comprising memory cells

Country Status (5)

Country	Link
EP (1)	EP3673510B1 (en)
KR (2)	KR102447261B1 (en)
CN (2)	CN111742409B (en)
TW (1)	TWI770436B (en)
WO (1)	WO2020101715A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI745132B (en) *	2020-10-22	2021-11-01	旺宏電子股份有限公司	Flash memory
US11417683B2 (en)	2020-10-22	2022-08-16	Macronix International Co., Ltd.	Flash memory and method of fabricating the same
US11469230B2 (en) *	2021-03-01	2022-10-11	Micron Technology, Inc.	Vertically separated storage nodes and access devices for semiconductor devices
CN113745232B (en) *	2021-09-02	2022-12-02	上海积塔半导体有限公司	Vertical memory with H-shaped capacitor structure and preparation method thereof
JP2024036259A (en) *	2022-09-05	2024-03-15	キオクシア株式会社	semiconductor storage device
WO2024060021A1 (en) *	2022-09-20	2024-03-28	华为技术有限公司	Three-dimensional memory array, memory, and electronic device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5977580A (en) *	1995-12-29	1999-11-02	Lg Semicon Co., Ltd.	Memory device and fabrication method thereof
US9698272B1 (en) *	2016-03-16	2017-07-04	Kabushiki Kaisha Toshiba	Transistor and semiconductor memory device
US20180323200A1 (en) *	2017-05-08	2018-11-08	Micron Technology, Inc.	Memory Arrays

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4745108B2 (en)	2006-04-06	2011-08-10	株式会社東芝	Nonvolatile semiconductor memory device
US8143121B2 (en) *	2009-10-01	2012-03-27	Nanya Technology Corp.	DRAM cell with double-gate fin-FET, DRAM cell array and fabrication method thereof
TWI574259B (en) *	2010-09-29	2017-03-11	半導體能源研究所股份有限公司	Semiconductor memory device and driving method thereof
KR20120069258A (en) *	2010-12-20	2012-06-28	에스케이하이닉스 주식회사	Vertical memory cell of semiconductor device
WO2012121265A1 (en)	2011-03-10	2012-09-13	Semiconductor Energy Laboratory Co., Ltd.	Memory device and method for manufacturing the same
US8891285B2 (en) *	2011-06-10	2014-11-18	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor memory device
US9177872B2 (en) *	2011-09-16	2015-11-03	Micron Technology, Inc.	Memory cells, semiconductor devices, systems including such cells, and methods of fabrication
KR20140017272A (en) *	2012-07-31	2014-02-11	에스케이하이닉스 주식회사	Semiconductor device and method of fabricating the same
KR20150020845A (en) *	2013-08-19	2015-02-27	에스케이하이닉스 주식회사	Semiconductor Device Having a Vertical Channel, Variable Resistive Memory Device Including the Same and Method of Manufacturing The Same

2018
- 2018-11-19 KR KR1020217031119A patent/KR102447261B1/en active Active
- 2018-11-19 CN CN201880039837.3A patent/CN111742409B/en active Active
- 2018-11-19 CN CN202410316844.0A patent/CN118234226A/en active Pending
- 2018-11-19 WO PCT/US2018/061749 patent/WO2020101715A1/en not_active Ceased
- 2018-11-19 EP EP18925720.7A patent/EP3673510B1/en active Active
- 2018-11-19 KR KR1020207004699A patent/KR102309405B1/en active Active
2019
- 2019-11-14 TW TW108141333A patent/TWI770436B/en active

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5977580A (en) *	1995-12-29	1999-11-02	Lg Semicon Co., Ltd.	Memory device and fabrication method thereof
US9698272B1 (en) *	2016-03-16	2017-07-04	Kabushiki Kaisha Toshiba	Transistor and semiconductor memory device
US20180323200A1 (en) *	2017-05-08	2018-11-08	Micron Technology, Inc.	Memory Arrays

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2020101715A1 *

Also Published As

Publication number	Publication date
EP3673510A1 (en)	2020-07-01
CN118234226A (en)	2024-06-21
KR102447261B1 (en)	2022-09-26
CN111742409B (en)	2024-04-09
WO2020101715A1 (en)	2020-05-22
CN111742409A (en)	2020-10-02
KR102309405B1 (en)	2021-10-07
TWI770436B (en)	2022-07-11
KR20200060711A (en)	2020-06-01
KR20210121304A (en)	2021-10-07
EP3673510B1 (en)	2024-09-25
TW202038440A (en)	2020-10-16

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