EP3890033A4 - PHOTOELECTRIC CHIP, MANUFACTURING METHOD AND INSTALLATION METHOD - Google Patents

PHOTOELECTRIC CHIP, MANUFACTURING METHOD AND INSTALLATION METHOD Download PDF

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Publication number
EP3890033A4
EP3890033A4 EP19902041.3A EP19902041A EP3890033A4 EP 3890033 A4 EP3890033 A4 EP 3890033A4 EP 19902041 A EP19902041 A EP 19902041A EP 3890033 A4 EP3890033 A4 EP 3890033A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
photoelectric chip
installation
installation method
photoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19902041.3A
Other languages
German (de)
French (fr)
Other versions
EP3890033A1 (en
Inventor
Yanwei YANG
Ying Li
Hongliang Liu
Ge LIU
Yan Zou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Phograin Tech Shenzhen Co Ltd
Phograin Technology Shenzhen Co Ltd
Original Assignee
Phograin Tech Shenzhen Co Ltd
Phograin Technology Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201811587824.8A external-priority patent/CN109671795B/en
Priority claimed from CN201811587822.9A external-priority patent/CN109801984B/en
Application filed by Phograin Tech Shenzhen Co Ltd, Phograin Technology Shenzhen Co Ltd filed Critical Phograin Tech Shenzhen Co Ltd
Publication of EP3890033A1 publication Critical patent/EP3890033A1/en
Publication of EP3890033A4 publication Critical patent/EP3890033A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
EP19902041.3A 2018-12-25 2019-10-31 PHOTOELECTRIC CHIP, MANUFACTURING METHOD AND INSTALLATION METHOD Pending EP3890033A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201811587824.8A CN109671795B (en) 2018-12-25 2018-12-25 Back incidence type array photoelectric chip and preparation method thereof
CN201811587822.9A CN109801984B (en) 2018-12-25 2018-12-25 Back incidence type photoelectric chip, preparation method and mounting method
PCT/CN2019/114636 WO2020134537A1 (en) 2018-12-25 2019-10-31 Photoelectric chip, manufacturing method and installation method

Publications (2)

Publication Number Publication Date
EP3890033A1 EP3890033A1 (en) 2021-10-06
EP3890033A4 true EP3890033A4 (en) 2022-05-11

Family

ID=71127602

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19902041.3A Pending EP3890033A4 (en) 2018-12-25 2019-10-31 PHOTOELECTRIC CHIP, MANUFACTURING METHOD AND INSTALLATION METHOD

Country Status (4)

Country Link
US (1) US11894471B2 (en)
EP (1) EP3890033A4 (en)
JP (1) JP7296150B2 (en)
WO (1) WO2020134537A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112736099A (en) * 2020-12-30 2021-04-30 芯思杰技术(深圳)股份有限公司 Photodetector chip array and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5877492A (en) * 1995-09-14 1999-03-02 Nec Corporation Contact type image sensor comprising a plurality of microlenses
US20030106988A1 (en) * 2001-12-06 2003-06-12 John Severn Optical beam sampling monitor
EP2413372A2 (en) * 2010-07-29 2012-02-01 Xiamen Sanan Optoelectronics Techonology Co., Ltd. Method for fabricating concentrated solar cell chip without edge current leakage
WO2013055008A1 (en) * 2011-10-11 2013-04-18 Lg Innotek Co., Ltd. Solar cell and solar cell module
WO2016081476A1 (en) * 2014-11-18 2016-05-26 Shih-Yuan Wang Microstructure enhanced absorption photosensitive devices
EP3270423A1 (en) * 2016-07-14 2018-01-17 Semi Conductor Devices-an Elbit Systems-Rafael Partnership A dual band photo-detector and a method thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3099921B2 (en) * 1992-09-11 2000-10-16 株式会社東芝 Surface emitting semiconductor laser device with light receiving element
JP2004219523A (en) * 2003-01-10 2004-08-05 Fujitsu Ltd Optical monitor device
CN100428507C (en) * 2003-06-06 2008-10-22 夏普株式会社 optical transmitter
US7313293B2 (en) * 2004-03-16 2007-12-25 Sumitomo Electric Industries, Ltd. Optical power monitoring apparatus, optical power monitoring method, and light receiving device
JP4785827B2 (en) * 2007-12-27 2011-10-05 三洋電機株式会社 Solar cell module and manufacturing method thereof
US9525093B2 (en) * 2009-06-30 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Infrared attenuating or blocking layer in optical proximity sensor
JP2013058656A (en) 2011-09-09 2013-03-28 Mitsubishi Electric Corp Back-illuminated semiconductor light-receiving element
US10636933B2 (en) * 2015-12-22 2020-04-28 Texas Instruments Incorporated Tilted photodetector cell
CN209401645U (en) * 2018-12-25 2019-09-17 深圳市芯思杰智慧传感技术有限公司 Back incident-type array photoelectric chip and its electric connection structure
CN109801984B (en) * 2018-12-25 2024-06-28 芯思杰技术(深圳)股份有限公司 Back incidence type photoelectric chip, preparation method and mounting method
CN209401635U (en) * 2018-12-25 2019-09-17 深圳市芯思杰智慧传感技术有限公司 Back incident-type photoelectric chip
CN109671795B (en) * 2018-12-25 2024-05-24 芯思杰技术(深圳)股份有限公司 Back incidence type array photoelectric chip and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5877492A (en) * 1995-09-14 1999-03-02 Nec Corporation Contact type image sensor comprising a plurality of microlenses
US20030106988A1 (en) * 2001-12-06 2003-06-12 John Severn Optical beam sampling monitor
EP2413372A2 (en) * 2010-07-29 2012-02-01 Xiamen Sanan Optoelectronics Techonology Co., Ltd. Method for fabricating concentrated solar cell chip without edge current leakage
WO2013055008A1 (en) * 2011-10-11 2013-04-18 Lg Innotek Co., Ltd. Solar cell and solar cell module
WO2016081476A1 (en) * 2014-11-18 2016-05-26 Shih-Yuan Wang Microstructure enhanced absorption photosensitive devices
EP3270423A1 (en) * 2016-07-14 2018-01-17 Semi Conductor Devices-an Elbit Systems-Rafael Partnership A dual band photo-detector and a method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2020134537A1 *

Also Published As

Publication number Publication date
WO2020134537A1 (en) 2020-07-02
JP7296150B2 (en) 2023-06-22
US11894471B2 (en) 2024-02-06
JP2022515280A (en) 2022-02-17
EP3890033A1 (en) 2021-10-06
US20210328080A1 (en) 2021-10-21

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