EP3940791A4 - SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - Google Patents

SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Download PDF

Info

Publication number
EP3940791A4
EP3940791A4 EP20769844.0A EP20769844A EP3940791A4 EP 3940791 A4 EP3940791 A4 EP 3940791A4 EP 20769844 A EP20769844 A EP 20769844A EP 3940791 A4 EP3940791 A4 EP 3940791A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
fabricating
semiconductor element
semiconductor
fabricating semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP20769844.0A
Other languages
German (de)
French (fr)
Other versions
EP3940791A1 (en
Inventor
Naohiko Kimizuka
Toyotaka Kataoka
Yoshiharu Kudoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of EP3940791A1 publication Critical patent/EP3940791A1/en
Publication of EP3940791A4 publication Critical patent/EP3940791A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/0142—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/028—Manufacture or treatment of image sensors covered by group H10F39/12 performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
EP20769844.0A 2019-03-14 2020-01-24 SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Withdrawn EP3940791A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019047655 2019-03-14
PCT/JP2020/002508 WO2020183937A1 (en) 2019-03-14 2020-01-24 Semiconductor element, semiconductor device, method of manufacturing semiconductor element, and method of manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
EP3940791A1 EP3940791A1 (en) 2022-01-19
EP3940791A4 true EP3940791A4 (en) 2022-09-07

Family

ID=72426705

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20769844.0A Withdrawn EP3940791A4 (en) 2019-03-14 2020-01-24 SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Country Status (7)

Country Link
US (1) US20220149093A1 (en)
EP (1) EP3940791A4 (en)
JP (1) JP7617840B2 (en)
KR (1) KR20210141931A (en)
CN (1) CN113383427A (en)
TW (1) TWI849059B (en)
WO (1) WO2020183937A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108470711B (en) * 2018-02-12 2020-10-02 上海集成电路研发中心有限公司 Manufacturing method of deep groove and silicon through hole of image sensor
JP2024003807A (en) * 2020-12-04 2024-01-16 ソニーグループ株式会社 solid-state image sensor
EP4099387A3 (en) 2021-06-01 2023-04-05 Samsung Electronics Co., Ltd. Image sensor including a transistor with a vertical channel and a method of manufacturing the same
WO2024166562A1 (en) * 2023-02-10 2024-08-15 ソニーセミコンダクタソリューションズ株式会社 Semiconductor device and electronic apparatus
CN116435324B (en) * 2023-06-09 2023-09-26 湖北江城芯片中试服务有限公司 Semiconductor structure and preparation method thereof, semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020011612A1 (en) * 2000-07-31 2002-01-31 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US20070134884A1 (en) * 2005-12-14 2007-06-14 Samsung Electronics Co., Ltd. Isolation method of defining active fins, method of fabricating semiconductor device using the same and semiconductor device fabricated thereby
US20100327360A1 (en) * 2009-06-25 2010-12-30 International Business Machines Corporation FET With Replacement Gate Structure and Method of Fabricating the Same
US20120100674A1 (en) * 2010-10-21 2012-04-26 International Business Machines Corporation Semiconductor structure and methods of manufacture
US20150171206A1 (en) * 2013-12-18 2015-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxially Growing III-V Contact Plugs for MOSFETs
US20160043190A1 (en) * 2014-08-08 2016-02-11 Globalfoundries Inc. Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabrication

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4384739B2 (en) * 1997-04-04 2009-12-16 聯華電子股▲ふん▼有限公司 Semiconductor device and manufacturing method thereof
JP2002151688A (en) * 2000-08-28 2002-05-24 Mitsubishi Electric Corp MOS type semiconductor device and method of manufacturing the same
JP5361110B2 (en) 2004-10-20 2013-12-04 三星電子株式会社 Solid-state image sensor element having non-planar transistor and manufacturing method thereof
JP2008192985A (en) * 2007-02-07 2008-08-21 Seiko Instruments Inc Semiconductor device and manufacturing method of semiconductor device
TWI401799B (en) * 2007-12-21 2013-07-11 Alpha & Omega Semiconductor Mos device with varying trench depth
CN102437088B (en) * 2010-09-29 2014-01-01 中国科学院微电子研究所 A kind of semiconductor structure and its manufacturing method
US9876077B1 (en) * 2016-06-30 2018-01-23 Globalfoundries Inc. Methods of forming a protection layer on an isolation region of IC products comprising FinFET devices
US10332877B2 (en) * 2016-08-21 2019-06-25 United Microelectronics Corp. Semiconductor device and manufacturing method thereof
US11264512B2 (en) * 2018-06-29 2022-03-01 Intel Corporation Thin film transistors having U-shaped features

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020011612A1 (en) * 2000-07-31 2002-01-31 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US20070134884A1 (en) * 2005-12-14 2007-06-14 Samsung Electronics Co., Ltd. Isolation method of defining active fins, method of fabricating semiconductor device using the same and semiconductor device fabricated thereby
US20100327360A1 (en) * 2009-06-25 2010-12-30 International Business Machines Corporation FET With Replacement Gate Structure and Method of Fabricating the Same
US20120100674A1 (en) * 2010-10-21 2012-04-26 International Business Machines Corporation Semiconductor structure and methods of manufacture
US20150171206A1 (en) * 2013-12-18 2015-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxially Growing III-V Contact Plugs for MOSFETs
US20160043190A1 (en) * 2014-08-08 2016-02-11 Globalfoundries Inc. Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2020183937A1 *

Also Published As

Publication number Publication date
CN113383427A (en) 2021-09-10
KR20210141931A (en) 2021-11-23
EP3940791A1 (en) 2022-01-19
JPWO2020183937A1 (en) 2020-09-17
WO2020183937A1 (en) 2020-09-17
JP7617840B2 (en) 2025-01-20
TWI849059B (en) 2024-07-21
US20220149093A1 (en) 2022-05-12
TW202036914A (en) 2020-10-01

Similar Documents

Publication Publication Date Title
EP3940791A4 (en) SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
EP3672439A4 (en) DEVICE AND METHOD FOR MANUFACTURING SHOES
EP3352219A4 (en) SEMICONDUCTOR IMAGING ELEMENT, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR IMAGING ELEMENT
EP3734778A4 (en) OPTICAL ELEMENT, OPTICAL DEVICE, AND OPTICAL ELEMENT MANUFACTURING METHOD
EP3498780A4 (en) CURABLE PARTICULATE SILICONE COMPOSITION, SEMICONDUCTOR ELEMENT COMPRISING THE CURABLE PARTICULATE SILICONE COMPOSITION, AND MOLDING METHOD FOR A SEMICONDUCTOR ELEMENT COMPRISING THE CURABLE PARTICULATE SILICONE COMPOSITION
EP3407376A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP3422428A4 (en) METHOD FOR MANUFACTURING MAGNESIUM-BASED THERMOELECTRIC CONVERSION MATERIAL, METHOD FOR MANUFACTURING MAGNEI-BASED THERMOELECTRIC CONVERSION ELEMENT, MAGNESIUM-BASED THERMOELECTRIC CONVERSION MATERIAL, MAGNESIUM-BASED THERMOELECTRIC CONVERSION ELEMENT, AND THERMOELECTRIC CONVERSION DEVICE
EP3335074A4 (en) DISPLAY ASSEMBLY, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE
EP3732706A4 (en) PROCESSES FOR FORMING STAIRCASE STRUCTURES, AND STAIRCASE STRUCTURES AND ASSOCIATED SEMICONDUCTOR DEVICE STRUCTURES
EP3828935A4 (en) SEMICONDUCTOR IMAGING ELEMENT, SEMICONDUCTOR IMAGING DEVICE AND SEMICONDUCTOR IMAGING ELEMENT MANUFACTURING METHOD
EP3379564A4 (en) SEMICONDUCTOR FILM COMPOSITION, SEMICONDUCTOR FILM COMPOSITION MANUFACTURING METHOD, SEMICONDUCTOR ELEMENT MANUFACTURING METHOD, PROCESS FOR SEMICONDUCTOR PROCESS MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE
EP3745449A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
EP3605219A4 (en) IMAGING ELEMENT DRIVING DEVICE, METHOD FOR MANUFACTURING IMAGING ELEMENT DRIVING DEVICE, AND IMAGING DEVICE
EP3916806A4 (en) SEMICONDUCTOR DEVICE
EP4082961A4 (en) PIEZOELECTRIC ELEMENT, PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT
EP3811408A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MAKING IT
EP3817034A4 (en) SEMICONDUCTOR DEVICE MANUFACTURING METHOD
EP3451062A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP3902048A4 (en) ELEMENT MANUFACTURING DEVICE AND METHOD
EP3506342A4 (en) SEMICONDUCTOR DEVICE, IMAGE CAPTURE DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
EP3447863A4 (en) SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP3787011A4 (en) SEMICONDUCTOR DEVICE MANUFACTURING METHOD
EP3937225A4 (en) SEMICONDUCTOR DEVICE
EP3832733A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MAKING IT
EP3428962A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20211007

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20220810

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 29/66 20060101ALI20220804BHEP

Ipc: H01L 27/146 20060101ALI20220804BHEP

Ipc: H01L 27/088 20060101ALI20220804BHEP

Ipc: H01L 27/06 20060101ALI20220804BHEP

Ipc: H01L 21/8234 20060101ALI20220804BHEP

Ipc: H01L 21/336 20060101ALI20220804BHEP

Ipc: H01L 29/78 20060101AFI20220804BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20250310

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20250417