ES2287309T3 - Dispositivos y circuitos nanoelectricos. - Google Patents

Dispositivos y circuitos nanoelectricos. Download PDF

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Publication number
ES2287309T3
ES2287309T3 ES02764075T ES02764075T ES2287309T3 ES 2287309 T3 ES2287309 T3 ES 2287309T3 ES 02764075 T ES02764075 T ES 02764075T ES 02764075 T ES02764075 T ES 02764075T ES 2287309 T3 ES2287309 T3 ES 2287309T3
Authority
ES
Spain
Prior art keywords
substrate
elongated
zone
channel
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES02764075T
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English (en)
Inventor
Aimin Song
Par Omling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PLASTIC EPRINT Ltd
Original Assignee
PLASTIC EPRINT Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PLASTIC EPRINT Ltd filed Critical PLASTIC EPRINT Ltd
Application granted granted Critical
Publication of ES2287309T3 publication Critical patent/ES2287309T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Networks Using Active Elements (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

Componente (130; 160) de circuito electrónico, que comprende un sustrato que soporta portadores de carga móviles, medios (8; 60; 70; 80; 114) de barrera aislantes alargados de división formados en la superficie del sustrato de manera que se definen zonas de sustrato primera (10; 50; 102; 154; 156) y segunda (12; 52; 54; 100; 104; 158) sobre cualquier lado de dichos medios de barrera, comprendiendo dichos medios de barrera una abertura, incluyendo además los medios de barrera barreras (16; 18; 66; 68; 82; 84; 120; 122; 174; 176) aislantes alargadas primera y segunda que se extienden desde los bordes de la abertura en la segunda zona (12; 52; 54; 100; 104; 158) de sustrato y que están situadas próximas entre sí pero separadas por una cantidad predeterminada para proporcionar un canal (20; 62; 64; 86; 88; 116; 118; 182; 184) alargado que se extiende entre las zonas de sustrato primera y segunda con un ancho predeterminado, que proporciona una trayectoria de flujo de portadores de carga en el sustrato desde la primera zona (10; 50; 102; 154; 156) de sustrato hacia la segunda zona (12; 52; 54; 100; 104; 158) de sustrato, y en el que dicho ancho predeterminado de dicho canal alargado es de tal manera que cuando se aplica una diferencia de voltaje entre dichas zonas de sustrato primera (10; 50; 102; 154; 156) y segunda (12; 52; 54; 100; 104; 158) tal como para provocar el flujo de dichos portadores de carga móviles a través de dicho canal (20; 62; 64; 86; 88; 116; 118; 182; 184) alargado, el voltaje existente en la segunda zona de sustrato influye, a través de dichas barreras (16; 18; 66; 68; 82; 84; 120; 122; 174; 176) aislantes primera y segunda, en el tamaño de las regiones de agotamiento existentes dentro de dicho canal alargado, por los que las características de conductividad del canal dependen de dicha diferencia de voltaje.
ES02764075T 2001-04-20 2002-04-18 Dispositivos y circuitos nanoelectricos. Expired - Lifetime ES2287309T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0109782.3A GB0109782D0 (en) 2001-04-20 2001-04-20 Nanoelectronic devices and circuits

Publications (1)

Publication Number Publication Date
ES2287309T3 true ES2287309T3 (es) 2007-12-16

Family

ID=9913182

Family Applications (1)

Application Number Title Priority Date Filing Date
ES02764075T Expired - Lifetime ES2287309T3 (es) 2001-04-20 2002-04-18 Dispositivos y circuitos nanoelectricos.

Country Status (12)

Country Link
US (1) US7224026B2 (es)
EP (1) EP1380053B1 (es)
JP (1) JP4902094B2 (es)
KR (1) KR100884040B1 (es)
CN (1) CN100377354C (es)
AT (1) ATE363733T1 (es)
AU (1) AU2002308010B2 (es)
CA (1) CA2444681C (es)
DE (1) DE60220394T2 (es)
ES (1) ES2287309T3 (es)
GB (1) GB0109782D0 (es)
WO (1) WO2002086973A2 (es)

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GB0109782D0 (en) * 2001-04-20 2001-06-13 Btg Int Ltd Nanoelectronic devices and circuits
JP3908503B2 (ja) * 2001-10-30 2007-04-25 富士通株式会社 光スイッチ
US7838875B1 (en) * 2003-01-22 2010-11-23 Tsang Dean Z Metal transistor device
GB0415995D0 (en) * 2004-07-16 2004-08-18 Song Aimin Memory array
US7874250B2 (en) * 2005-02-09 2011-01-25 Schlumberger Technology Corporation Nano-based devices for use in a wellbore
KR101317695B1 (ko) * 2005-05-09 2013-10-15 나노 이프린트 리미티드 전자 소자
US20080253167A1 (en) * 2007-04-16 2008-10-16 Ralf Symanczyk Integrated Circuit, Method of Operating an Integrated Circuit, Method of Manufacturing an Integrated Circuit, Active Element, Memory Module, and Computing System
GB2462693B (en) * 2008-07-31 2013-06-19 Pragmatic Printing Ltd Forming electrically insulative regions
GB2467316B (en) 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
CN101431106B (zh) * 2008-12-05 2012-06-06 中山大学 基于负微分迁移率的平面纳米电磁辐射器结构
GB2473200B (en) * 2009-09-02 2014-03-05 Pragmatic Printing Ltd Structures comprising planar electronic devices
GB2475561A (en) 2009-11-24 2011-05-25 Nano Eprint Ltd Planar electronic devices
US20120305892A1 (en) * 2010-12-08 2012-12-06 Martin Thornton Electronic device, method of manufacturing a device and apparatus for manufacturing a device
JP5594780B2 (ja) * 2011-02-28 2014-09-24 日本電信電話株式会社 半導体回路
GB2499606B (en) 2012-02-21 2016-06-22 Pragmatic Printing Ltd Substantially planar electronic devices and circuits
JP5814194B2 (ja) * 2012-07-27 2015-11-17 日本電信電話株式会社 半導体論理回路
EP2731263A1 (en) 2012-11-08 2014-05-14 Université Montpellier 2 Sciences et Techniques Device and method for mixing electromagnetic waves with frequencies up to the THz range
EP2731264A1 (en) 2012-11-08 2014-05-14 Université Montpellier 2 Sciences et Techniques Device and method for direct demodulation of signals with carrier frequencies up to the THz range
CN103219944B (zh) * 2013-04-23 2015-09-16 华南师范大学 一种基于低维半导体结构的倍频器
CN103489937B (zh) * 2013-10-11 2017-01-25 中国科学院半导体研究所 一种非对称沟道量子点场效应光子探测器
CN104112752B (zh) 2014-05-16 2017-03-08 华南师范大学 具有相位锁定功能的平面纳米振荡器阵列
FR3030886B1 (fr) * 2014-12-22 2017-03-10 Centre Nat Rech Scient Dispositif de modulation comportant une nano-diode
CN108598258B (zh) * 2018-04-27 2021-11-09 华南师范大学 一种具有静态负微分电阻特性的太赫兹器件
JP2020009883A (ja) * 2018-07-06 2020-01-16 ソニーセミコンダクタソリューションズ株式会社 受光素子、測距モジュール、および、電子機器

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Also Published As

Publication number Publication date
DE60220394T2 (de) 2008-01-31
US7224026B2 (en) 2007-05-29
US20040149679A1 (en) 2004-08-05
CA2444681C (en) 2013-12-17
EP1380053B1 (en) 2007-05-30
GB0109782D0 (en) 2001-06-13
WO2002086973A3 (en) 2003-10-16
DE60220394D1 (de) 2007-07-12
JP4902094B2 (ja) 2012-03-21
CN1669144A (zh) 2005-09-14
KR20040012755A (ko) 2004-02-11
AU2002308010B2 (en) 2007-08-09
JP2004534388A (ja) 2004-11-11
KR100884040B1 (ko) 2009-02-19
CA2444681A1 (en) 2002-10-31
WO2002086973A2 (en) 2002-10-31
CN100377354C (zh) 2008-03-26
ATE363733T1 (de) 2007-06-15
EP1380053A2 (en) 2004-01-14

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