FR1167168A - Perfectionnements aux procédés de fabrication des dispositifs semi-conducteurs à jonctions - Google Patents

Perfectionnements aux procédés de fabrication des dispositifs semi-conducteurs à jonctions

Info

Publication number
FR1167168A
FR1167168A FR1167168DA FR1167168A FR 1167168 A FR1167168 A FR 1167168A FR 1167168D A FR1167168D A FR 1167168DA FR 1167168 A FR1167168 A FR 1167168A
Authority
FR
France
Prior art keywords
junctions
semiconductor devices
manufacturing processes
processes
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Post Office
Original Assignee
Post Office
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Post Office filed Critical Post Office
Application granted granted Critical
Publication of FR1167168A publication Critical patent/FR1167168A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel
FR1167168D 1956-02-23 1957-02-22 Perfectionnements aux procédés de fabrication des dispositifs semi-conducteurs à jonctions Expired FR1167168A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5706/56A GB864222A (en) 1956-02-23 1956-02-23 Improvements in or relating to methods for the production of semi-conductor junctiondevices

Publications (1)

Publication Number Publication Date
FR1167168A true FR1167168A (fr) 1958-11-21

Family

ID=9801108

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1167168D Expired FR1167168A (fr) 1956-02-23 1957-02-22 Perfectionnements aux procédés de fabrication des dispositifs semi-conducteurs à jonctions

Country Status (4)

Country Link
US (1) US2993817A (fr)
DE (1) DE1131324B (fr)
FR (1) FR1167168A (fr)
GB (1) GB864222A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3188252A (en) * 1961-11-20 1965-06-08 Trw Semiconductors Inc Method of producing a broad area fused junction in a semiconductor body
CN102921666B (zh) * 2012-11-21 2014-12-17 南京熊猫电子股份有限公司 消除电容式触摸屏蚀刻残留溶液的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2829422A (en) * 1952-05-21 1958-04-08 Bell Telephone Labor Inc Methods of fabricating semiconductor signal translating devices
NL178757B (nl) * 1952-06-02 British Steel Corp Werkwijze en inrichting voor het continu produceren van een metaalstrook uit metaalpoeder.
US2774695A (en) * 1953-02-27 1956-12-18 Bell Telephone Labor Inc Process of fabricating germanium single crystals
US2778802A (en) * 1954-04-26 1957-01-22 Battelle Development Corp Intermetallic compounds of groups iii and v metals containing small amounts of nickel, cobalt or iron
US2813233A (en) * 1954-07-01 1957-11-12 Bell Telephone Labor Inc Semiconductive device
NL199100A (fr) * 1955-07-21
US2827436A (en) * 1956-01-16 1958-03-18 Bell Telephone Labor Inc Method of improving the minority carrier lifetime in a single crystal silicon body
BE557039A (fr) * 1956-04-27
US2842831A (en) * 1956-08-30 1958-07-15 Bell Telephone Labor Inc Manufacture of semiconductor devices

Also Published As

Publication number Publication date
DE1131324B (de) 1962-06-14
GB864222A (en) 1961-03-29
US2993817A (en) 1961-07-25

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