FR1459214A - Dispositif de mémoire semi-conducteur - Google Patents

Dispositif de mémoire semi-conducteur

Info

Publication number
FR1459214A
FR1459214A FR33841A FR33841A FR1459214A FR 1459214 A FR1459214 A FR 1459214A FR 33841 A FR33841 A FR 33841A FR 33841 A FR33841 A FR 33841A FR 1459214 A FR1459214 A FR 1459214A
Authority
FR
France
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR33841A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Systems Corp
Original Assignee
Litton Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US436002A external-priority patent/US3375502A/en
Application filed by Litton Industries Inc filed Critical Litton Industries Inc
Priority to FR33841A priority Critical patent/FR1459214A/fr
Application granted granted Critical
Publication of FR1459214A publication Critical patent/FR1459214A/fr
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H03K3/352Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
FR33841A 1964-11-10 1965-10-05 Dispositif de mémoire semi-conducteur Expired FR1459214A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR33841A FR1459214A (fr) 1964-11-10 1965-10-05 Dispositif de mémoire semi-conducteur

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41007764A 1964-11-10 1964-11-10
US436002A US3375502A (en) 1964-11-10 1965-03-01 Dynamic memory using controlled semiconductors
FR33841A FR1459214A (fr) 1964-11-10 1965-10-05 Dispositif de mémoire semi-conducteur

Publications (1)

Publication Number Publication Date
FR1459214A true FR1459214A (fr) 1966-04-29

Family

ID=27242596

Family Applications (1)

Application Number Title Priority Date Filing Date
FR33841A Expired FR1459214A (fr) 1964-11-10 1965-10-05 Dispositif de mémoire semi-conducteur

Country Status (1)

Country Link
FR (1) FR1459214A (fr)

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