FR2284191B1 - - Google Patents

Info

Publication number
FR2284191B1
FR2284191B1 FR7526896A FR7526896A FR2284191B1 FR 2284191 B1 FR2284191 B1 FR 2284191B1 FR 7526896 A FR7526896 A FR 7526896A FR 7526896 A FR7526896 A FR 7526896A FR 2284191 B1 FR2284191 B1 FR 2284191B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7526896A
Other versions
FR2284191A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2284191A1 publication Critical patent/FR2284191A1/fr
Application granted granted Critical
Publication of FR2284191B1 publication Critical patent/FR2284191B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
FR7526896A 1974-09-03 1975-09-02 Contact ohmique pour semi-conducteur et son procede de realisation Granted FR2284191A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/502,451 US3965279A (en) 1974-09-03 1974-09-03 Ohmic contacts for group III-V n-type semiconductors

Publications (2)

Publication Number Publication Date
FR2284191A1 FR2284191A1 (fr) 1976-04-02
FR2284191B1 true FR2284191B1 (fr) 1978-03-17

Family

ID=23997889

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7526896A Granted FR2284191A1 (fr) 1974-09-03 1975-09-02 Contact ohmique pour semi-conducteur et son procede de realisation

Country Status (9)

Country Link
US (1) US3965279A (fr)
JP (1) JPS6016096B2 (fr)
BE (1) BE832890A (fr)
CA (1) CA1022690A (fr)
DE (1) DE2538600C2 (fr)
FR (1) FR2284191A1 (fr)
GB (1) GB1514795A (fr)
IT (1) IT1047152B (fr)
NL (1) NL7510327A (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2550512A1 (de) * 1975-11-11 1977-05-12 Bosch Gmbh Robert Verfahren zur herstellung einer metallisierung auf einem substrat
JPS5928376A (ja) * 1982-08-09 1984-02-15 Hitachi Ltd 半導体装置およびその製造方法
JPS59186379A (ja) * 1983-04-07 1984-10-23 Nec Corp 化合物半導体装置の製造方法
AU576594B2 (en) * 1984-06-15 1988-09-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Heat-resistant thin film photoelectric converter
US4529619A (en) * 1984-07-16 1985-07-16 Xerox Corporation Ohmic contacts for hydrogenated amorphous silicon
US4766093A (en) * 1984-07-30 1988-08-23 International Business Machines Corp. Chemically formed self-aligned structure and wave guide
JP2893723B2 (ja) * 1988-06-13 1999-05-24 住友電気工業株式会社 オーミック電極の製造方法
JPH03167877A (ja) * 1989-11-28 1991-07-19 Sumitomo Electric Ind Ltd ｎ型立方晶窒化硼素のオーム性電極及びその形成方法
US6555457B1 (en) * 2000-04-07 2003-04-29 Triquint Technology Holding Co. Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit
US6955978B1 (en) * 2001-12-20 2005-10-18 Fairchild Semiconductor Corporation Uniform contact
TWI291232B (en) * 2006-01-03 2007-12-11 Univ Nat Chiao Tung Copper metalized ohmic contact electrode of compound semiconductor device
US20100012175A1 (en) * 2008-07-16 2010-01-21 Emcore Solar Power, Inc. Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells
US20100116329A1 (en) * 2008-06-09 2010-05-13 Fitzgerald Eugene A Methods of forming high-efficiency solar cell structures
US20110132445A1 (en) * 2009-05-29 2011-06-09 Pitera Arthur J High-efficiency multi-junction solar cell structures
US8604330B1 (en) 2010-12-06 2013-12-10 4Power, Llc High-efficiency solar-cell arrays with integrated devices and methods for forming them

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3239376A (en) * 1962-06-29 1966-03-08 Bell Telephone Labor Inc Electrodes to semiconductor wafers
NL294675A (fr) * 1962-06-29
US3371255A (en) * 1965-06-09 1968-02-27 Texas Instruments Inc Gallium arsenide semiconductor device and contact alloy therefor
US3523222A (en) * 1966-09-15 1970-08-04 Texas Instruments Inc Semiconductive contacts
US3518749A (en) * 1968-02-23 1970-07-07 Rca Corp Method of making gunn-effect devices
US3567508A (en) * 1968-10-31 1971-03-02 Gen Electric Low temperature-high vacuum contact formation process
US3686539A (en) * 1970-05-04 1972-08-22 Rca Corp Gallium arsenide semiconductor device with improved ohmic electrode
US3684930A (en) * 1970-12-28 1972-08-15 Gen Electric Ohmic contact for group iii-v p-types semiconductors
US3728785A (en) * 1971-04-15 1973-04-24 Monsanto Co Fabrication of semiconductor devices
US3890699A (en) * 1974-06-04 1975-06-24 Us Army Method of making an ohmic contact to a semiconductor material

Also Published As

Publication number Publication date
NL7510327A (nl) 1976-03-05
DE2538600C2 (de) 1984-09-13
JPS5150665A (en) 1976-05-04
GB1514795A (en) 1978-06-21
JPS6016096B2 (ja) 1985-04-23
CA1022690A (fr) 1977-12-13
IT1047152B (it) 1980-09-10
FR2284191A1 (fr) 1976-04-02
BE832890A (fr) 1975-12-16
DE2538600A1 (de) 1976-03-11
US3965279A (en) 1976-06-22

Similar Documents

Publication Publication Date Title
FR2284191B1 (fr)
AU495841B2 (fr)
FI750405A7 (fr)
FI750747A7 (fr)
CS166637B1 (fr)
BG19894A1 (fr)
BG19972A1 (fr)
DD120382A5 (fr)
DD119162A5 (fr)
DD114475A5 (fr)
DD114288A1 (fr)
CH595864A5 (fr)
CH588182B5 (fr)
BG20425A1 (fr)
BG20190A1 (fr)
BG20160A1 (fr)
AU482286A (fr)
BG20042A1 (fr)
BG19730A1 (fr)
BG19996A1 (fr)
BG19746A1 (fr)
BG19960A1 (fr)
BG19957A1 (fr)
BG19927A1 (fr)
CH614731A5 (fr)

Legal Events

Date Code Title Description
ST Notification of lapse