FR2438918B3 - - Google Patents
Info
- Publication number
- FR2438918B3 FR2438918B3 FR7925431A FR7925431A FR2438918B3 FR 2438918 B3 FR2438918 B3 FR 2438918B3 FR 7925431 A FR7925431 A FR 7925431A FR 7925431 A FR7925431 A FR 7925431A FR 2438918 B3 FR2438918 B3 FR 2438918B3
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19782844878 DE2844878A1 (de) | 1978-10-14 | 1978-10-14 | Integrierbarer isolierschicht-feldeffekttransistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2438918A1 FR2438918A1 (fr) | 1980-05-09 |
| FR2438918B3 true FR2438918B3 (fr) | 1981-07-10 |
Family
ID=6052234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7925431A Granted FR2438918A1 (fr) | 1978-10-14 | 1979-10-12 | Transistor a effet de champ a porte isolee integrale |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4251829A (fr) |
| JP (1) | JPS5553463A (fr) |
| DE (1) | DE2844878A1 (fr) |
| FR (1) | FR2438918A1 (fr) |
| GB (1) | GB2033150B (fr) |
| IT (1) | IT1193240B (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4486769A (en) * | 1979-01-24 | 1984-12-04 | Xicor, Inc. | Dense nonvolatile electrically-alterable memory device with substrate coupling electrode |
| US4561004A (en) * | 1979-10-26 | 1985-12-24 | Texas Instruments | High density, electrically erasable, floating gate memory cell |
| US4404577A (en) * | 1980-06-30 | 1983-09-13 | International Business Machines Corp. | Electrically alterable read only memory cell |
| JPS5759387A (en) * | 1980-09-26 | 1982-04-09 | Toshiba Corp | Semiconductor storage device |
| JPS59500342A (ja) * | 1982-03-09 | 1984-03-01 | ア−ルシ−エ− コ−ポレ−シヨン | 電気的に改変可能の不揮発性浮動ゲ−ト記憶装置 |
| US4605946A (en) * | 1984-08-16 | 1986-08-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Fet charge sensor and voltage probe |
| JPS61208865A (ja) * | 1985-03-13 | 1986-09-17 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPS6260267A (ja) * | 1985-09-10 | 1987-03-16 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
| KR920001402B1 (ko) * | 1988-11-29 | 1992-02-13 | 삼성전자 주식회사 | 불휘발성 반도체 기억소자 |
| US6414318B1 (en) | 1998-11-06 | 2002-07-02 | Bridge Semiconductor Corporation | Electronic circuit |
| WO2000028337A2 (fr) | 1998-11-06 | 2000-05-18 | Onguard Systems, Inc. | Circuit electronique |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2144436C2 (de) * | 1971-09-04 | 1983-01-20 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Integrierte Festkörperschaltung zum Einstellen der effektiven Schwellenspannung eines Isolierschicht-Feldeffekttransistors |
| US4004159A (en) * | 1973-05-18 | 1977-01-18 | Sanyo Electric Co., Ltd. | Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation |
| US3996657A (en) * | 1974-12-30 | 1976-12-14 | Intel Corporation | Double polycrystalline silicon gate memory device |
| US4028694A (en) * | 1975-06-10 | 1977-06-07 | International Business Machines Corporation | A/D and D/A converter using C-2C ladder network |
| JPS5279679A (en) * | 1975-12-26 | 1977-07-04 | Toshiba Corp | Semiconductor memory device |
| JPS5853512B2 (ja) * | 1976-02-13 | 1983-11-29 | 株式会社東芝 | 半導体記憶装置の製造方法 |
| US4119995A (en) * | 1976-08-23 | 1978-10-10 | Intel Corporation | Electrically programmable and electrically erasable MOS memory cell |
| FR2365859A1 (fr) * | 1976-09-24 | 1978-04-21 | Thomson Csf | Memoire non volatile pour signaux rapides |
| JPS6037619B2 (ja) * | 1976-11-17 | 1985-08-27 | 株式会社東芝 | 半導体メモリ装置 |
| NL7700879A (nl) * | 1977-01-28 | 1978-08-01 | Philips Nv | Halfgeleiderinrichting. |
| DE2728927C2 (de) * | 1977-06-27 | 1984-06-28 | Siemens AG, 1000 Berlin und 8000 München | Ein-Transistor-Speicherelement |
| US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
| US4162504A (en) * | 1977-12-27 | 1979-07-24 | Rca Corp. | Floating gate solid-state storage device |
-
1978
- 1978-10-14 DE DE19782844878 patent/DE2844878A1/de not_active Withdrawn
-
1979
- 1979-10-01 US US06/080,871 patent/US4251829A/en not_active Expired - Lifetime
- 1979-10-02 GB GB7934103A patent/GB2033150B/en not_active Expired
- 1979-10-12 IT IT26448/79A patent/IT1193240B/it active
- 1979-10-12 FR FR7925431A patent/FR2438918A1/fr active Granted
- 1979-10-15 JP JP13195579A patent/JPS5553463A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT7926448A0 (it) | 1979-10-12 |
| JPS5553463A (en) | 1980-04-18 |
| GB2033150A (en) | 1980-05-14 |
| IT1193240B (it) | 1988-06-15 |
| GB2033150B (en) | 1983-02-02 |
| US4251829A (en) | 1981-02-17 |
| FR2438918A1 (fr) | 1980-05-09 |
| DE2844878A1 (de) | 1980-04-30 |