FR2809532B1 - Procede de fabrication de circuits semiconducteurs double face - Google Patents

Procede de fabrication de circuits semiconducteurs double face

Info

Publication number
FR2809532B1
FR2809532B1 FR0006572A FR0006572A FR2809532B1 FR 2809532 B1 FR2809532 B1 FR 2809532B1 FR 0006572 A FR0006572 A FR 0006572A FR 0006572 A FR0006572 A FR 0006572A FR 2809532 B1 FR2809532 B1 FR 2809532B1
Authority
FR
France
Prior art keywords
semiconductor circuits
manufacturing double
sided semiconductor
sided
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0006572A
Other languages
English (en)
Other versions
FR2809532A1 (fr
Inventor
Christian Fleitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0006572A priority Critical patent/FR2809532B1/fr
Priority to US09/863,833 priority patent/US20020001978A1/en
Publication of FR2809532A1 publication Critical patent/FR2809532A1/fr
Application granted granted Critical
Publication of FR2809532B1 publication Critical patent/FR2809532B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G03F7/0957—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer with sensitive layers on both sides of the substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
FR0006572A 2000-05-23 2000-05-23 Procede de fabrication de circuits semiconducteurs double face Expired - Fee Related FR2809532B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0006572A FR2809532B1 (fr) 2000-05-23 2000-05-23 Procede de fabrication de circuits semiconducteurs double face
US09/863,833 US20020001978A1 (en) 2000-05-23 2001-05-23 Method for manufacturing double-faced semiconductor circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0006572A FR2809532B1 (fr) 2000-05-23 2000-05-23 Procede de fabrication de circuits semiconducteurs double face

Publications (2)

Publication Number Publication Date
FR2809532A1 FR2809532A1 (fr) 2001-11-30
FR2809532B1 true FR2809532B1 (fr) 2003-09-26

Family

ID=8850516

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0006572A Expired - Fee Related FR2809532B1 (fr) 2000-05-23 2000-05-23 Procede de fabrication de circuits semiconducteurs double face

Country Status (2)

Country Link
US (1) US20020001978A1 (fr)
FR (1) FR2809532B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7774283B2 (en) * 2004-02-23 2010-08-10 Pitney Bowes Inc. Method and system for using a camera cell phone in transactions
US20110108622A1 (en) * 2004-02-23 2011-05-12 Pitney Bowes Inc. Method and system for using a camera cell phone in transactions
US8003537B2 (en) * 2006-07-18 2011-08-23 Imec Method for the production of planar structures
US20150302330A1 (en) * 2012-03-05 2015-10-22 Ron BANNER Automated Job Assignment to Service Providers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4284468A (en) * 1977-12-16 1981-08-18 Llewelyn Stearns Patterned chemical etching of high temperature resistant metals
JPH0268921A (ja) * 1988-09-02 1990-03-08 Tokyo Electron Ltd レジスト処理装置
JPH0335525A (ja) * 1989-07-03 1991-02-15 Yokogawa Electric Corp シリコンウエハの両面加工方法
JP2956387B2 (ja) * 1992-05-25 1999-10-04 三菱電機株式会社 レジスト被覆膜材料、その形成方法とそれを用いたパターン形成方法および半導体装置
EP0587213B1 (fr) * 1992-08-31 2000-05-31 Agfa-Gevaert N.V. Image crée par transfert thermique
NL9400225A (nl) * 1994-02-14 1995-09-01 Od & Me Bv Werkwijze voor het zonder tussenkomst van een master vervaardigen van een stamper voor het voortbrengen van optische schijven.
US5804487A (en) * 1996-07-10 1998-09-08 Trw Inc. Method of fabricating high βHBT devices
JP3477077B2 (ja) * 1997-07-01 2003-12-10 株式会社東芝 ネガ型感光性樹脂組成物、これを用いたパターン形成方法、および電子部品

Also Published As

Publication number Publication date
FR2809532A1 (fr) 2001-11-30
US20020001978A1 (en) 2002-01-03

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100129