FR3094376B1 - Procédé de polissage mécano-chimique du cobalt ayant des taux élevés de retrait du cobalt et une corrosion réduite du cobalt - Google Patents

Procédé de polissage mécano-chimique du cobalt ayant des taux élevés de retrait du cobalt et une corrosion réduite du cobalt Download PDF

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Publication number
FR3094376B1
FR3094376B1 FR2003028A FR2003028A FR3094376B1 FR 3094376 B1 FR3094376 B1 FR 3094376B1 FR 2003028 A FR2003028 A FR 2003028A FR 2003028 A FR2003028 A FR 2003028A FR 3094376 B1 FR3094376 B1 FR 3094376B1
Authority
FR
France
Prior art keywords
cobalt
polishing
chemical mechanical
corrosion
mechanical polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR2003028A
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English (en)
Other versions
FR3094376A1 (fr
Inventor
Murali Ganth Theivanayagam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR3094376A1 publication Critical patent/FR3094376A1/fr
Application granted granted Critical
Publication of FR3094376B1 publication Critical patent/FR3094376B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Titre de l’invention : Procédé de polissage mécano-chimique du cobalt ayant des taux élevés de retrait du cobalt et une corrosion réduite du cobalt Procédé pour le polissage mécano-chimique du cobalt pour planariser la surface et retirer au moins une partie du cobalt d'un substrat. Le procédé comprend la fourniture d'une composition de polissage contenant, en tant que composants initiaux : de l'eau ; un agent oxydant ; des particules abrasives de silice colloïdale ; de l'acide aspartique ou un sel de celui–ci ; un acide phosphonique ayant un groupe alkyle de plus de dix atomes de carbone, lequel acide phosphonique ayant le groupe alkyle de plus de dix atomes de carbone est inclus en des quantités suffisantes pour permettre des taux élevés de retrait du cobalt, > 2000 Å/min, et une inhibition sensible de la corrosion du cobalt ; et la fourniture d'un tampon de polissage mécano-chimique ayant une surface de polissage ; la création d'un contact dynamique à une interface entre le tampon de polissage et le substrat ; et la distribution de la composition de polissage sur la surface de polissage au niveau ou à proximité de l'interface entre le tampon de polissage et le substrat ; dans lequel une partie du cobalt est retirée par polissage et la corrosion du cobalt est sensiblement inhibée.
FR2003028A 2019-03-29 2020-03-27 Procédé de polissage mécano-chimique du cobalt ayant des taux élevés de retrait du cobalt et une corrosion réduite du cobalt Expired - Fee Related FR3094376B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/369,085 US10947413B2 (en) 2019-03-29 2019-03-29 Chemical mechanical polishing method for cobalt with high cobalt removal rates and reduced cobalt corrosion
US16/369,085 2019-03-29

Publications (2)

Publication Number Publication Date
FR3094376A1 FR3094376A1 (fr) 2020-10-02
FR3094376B1 true FR3094376B1 (fr) 2023-01-06

Family

ID=72607025

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2003028A Expired - Fee Related FR3094376B1 (fr) 2019-03-29 2020-03-27 Procédé de polissage mécano-chimique du cobalt ayant des taux élevés de retrait du cobalt et une corrosion réduite du cobalt

Country Status (7)

Country Link
US (1) US10947413B2 (fr)
JP (1) JP2020174176A (fr)
KR (1) KR20200115329A (fr)
CN (1) CN111745532B (fr)
DE (1) DE102020001871A1 (fr)
FR (1) FR3094376B1 (fr)
TW (1) TW202106824A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7435739B2 (ja) * 2020-11-17 2024-02-21 株式会社レゾナック 研磨剤、複数液式研磨剤及び研磨方法
KR20230125258A (ko) * 2020-12-21 2023-08-29 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 화학적 기계적 연마 조성물 및 이의 사용 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130186850A1 (en) * 2012-01-24 2013-07-25 Applied Materials, Inc. Slurry for cobalt applications
SG11201506102TA (en) * 2013-02-28 2015-09-29 Fujimi Inc Polishing slurry for cobalt removal
US10059860B2 (en) * 2014-02-26 2018-08-28 Fujimi Incorporated Polishing composition
US9944828B2 (en) 2014-10-21 2018-04-17 Cabot Microelectronics Corporation Slurry for chemical mechanical polishing of cobalt
WO2016065057A1 (fr) * 2014-10-21 2016-04-28 Cabot Microelectronics Corporation Inhibiteurs de corrosion et compositions et procédés associés
TWI775722B (zh) * 2014-12-22 2022-09-01 德商巴斯夫歐洲公司 化學機械拋光（ｃｍｐ）組成物用於拋光含鈷及/或鈷合金之基材的用途
KR102588042B1 (ko) * 2014-12-22 2023-10-11 바스프 에스이 코발트 및/또는 코발트 합금 포함 기판의 연마를 위한 화학적 기계적 연마 (cmp) 조성물의 용도
CN104830235B (zh) * 2015-04-29 2017-06-23 清华大学 用于钴阻挡层结构化学机械抛光的抛光液及其应用
JP6900366B2 (ja) 2015-08-12 2021-07-07 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ コバルトを含む基板の研磨のための化学機械研磨（ｃｍｐ）組成物の使用方法
US9984895B1 (en) * 2017-01-31 2018-05-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US10377921B2 (en) * 2017-09-21 2019-08-13 Rohm and Haas Electronics Materials CMP Holdings, Inc. Chemical mechanical polishing method for cobalt
US10170335B1 (en) * 2017-09-21 2019-01-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for cobalt

Also Published As

Publication number Publication date
US20200308445A1 (en) 2020-10-01
DE102020001871A1 (de) 2020-10-01
FR3094376A1 (fr) 2020-10-02
JP2020174176A (ja) 2020-10-22
US10947413B2 (en) 2021-03-16
CN111745532B (zh) 2022-03-11
KR20200115329A (ko) 2020-10-07
TW202106824A (zh) 2021-02-16
CN111745532A (zh) 2020-10-09

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