IL106417A - High polishing silicon carbide, with high thermal conductivity, preparation method and uses. - Google Patents

High polishing silicon carbide, with high thermal conductivity, preparation method and uses.

Info

Publication number: IL106417A
Authority: IL; Israel
Prior art keywords: silicon carbide; deposition; gas; furnace; deposition chamber
Prior art date: 1992-07-31

Application number

IL10641793A

Other languages

English (en)

Hebrew (he)

Other versions

IL106417A0 (en

Original Assignee

Cvd Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1992-07-31

Filing date

1993-07-20

Publication date

1996-09-12

1993-07-20 Application filed by Cvd Inc filed Critical Cvd Inc

1993-11-15 Publication of IL106417A0 publication Critical patent/IL106417A0/xx

1996-09-12 Publication of IL106417A publication Critical patent/IL106417A/en

Links

229910010271 silicon carbide Inorganic materials 0.000 title claims description 73
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 68
238000000034 method Methods 0.000 title claims description 20
238000002360 preparation method Methods 0.000 title description 2
238000000151 deposition Methods 0.000 claims description 91
230000008021 deposition Effects 0.000 claims description 88
239000007789 gas Substances 0.000 claims description 45
239000005055 methyl trichlorosilane Substances 0.000 claims description 35
JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims description 35
239000000758 substrate Substances 0.000 claims description 29
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 22
238000005229 chemical vapour deposition Methods 0.000 claims description 21
239000000463 material Substances 0.000 claims description 15
239000001257 hydrogen Substances 0.000 claims description 11
229910052739 hydrogen Inorganic materials 0.000 claims description 11
239000011236 particulate material Substances 0.000 claims description 11
239000011248 coating agent Substances 0.000 claims description 9
238000000576 coating method Methods 0.000 claims description 9
239000000919 ceramic Substances 0.000 claims description 7
238000004519 manufacturing process Methods 0.000 claims description 7
238000006243 chemical reaction Methods 0.000 claims description 5
230000008569 process Effects 0.000 claims description 5
230000001681 protective effect Effects 0.000 claims description 5
239000000126 substance Substances 0.000 claims description 5
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
230000003197 catalytic effect Effects 0.000 claims description 4
238000004891 communication Methods 0.000 claims description 4
238000009413 insulation Methods 0.000 claims description 4
239000002826 coolant Substances 0.000 claims description 3
239000002808 molecular sieve Substances 0.000 claims description 2
238000007789 sealing Methods 0.000 claims description 2
URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 claims description 2
238000010438 heat treatment Methods 0.000 claims 4
239000000835 fiber Substances 0.000 claims 3
MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
229910001882 dioxygen Inorganic materials 0.000 claims 2
239000012774 insulation material Substances 0.000 claims 2
238000011109 contamination Methods 0.000 claims 1
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
229910052799 carbon Inorganic materials 0.000 description 13
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
239000001301 oxygen Substances 0.000 description 12
229910052760 oxygen Inorganic materials 0.000 description 12
239000010410 layer Substances 0.000 description 11
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
229910000838 Al alloy Inorganic materials 0.000 description 8
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
229910052782 aluminium Inorganic materials 0.000 description 8
238000013461 design Methods 0.000 description 8
BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 8
238000003860 storage Methods 0.000 description 7
230000003746 surface roughness Effects 0.000 description 5
229910045601 alloy Inorganic materials 0.000 description 4
239000000956 alloy Substances 0.000 description 4
229910052786 argon Inorganic materials 0.000 description 4
230000008901 benefit Effects 0.000 description 4
239000010408 film Substances 0.000 description 4
239000012535 impurity Substances 0.000 description 4
229910052759 nickel Inorganic materials 0.000 description 4
230000003287 optical effect Effects 0.000 description 4
229910052710 silicon Inorganic materials 0.000 description 4
238000005245 sintering Methods 0.000 description 4
238000000429 assembly Methods 0.000 description 3
230000000712 assembly Effects 0.000 description 3
229910017052 cobalt Inorganic materials 0.000 description 3
239000010941 cobalt Substances 0.000 description 3
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
229910002804 graphite Inorganic materials 0.000 description 3
239000010439 graphite Substances 0.000 description 3
230000005381 magnetic domain Effects 0.000 description 3
230000003647 oxidation Effects 0.000 description 3
238000007254 oxidation reaction Methods 0.000 description 3
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
238000013459 approach Methods 0.000 description 2
239000012159 carrier gas Substances 0.000 description 2
239000000356 contaminant Substances 0.000 description 2
230000008878 coupling Effects 0.000 description 2
238000010168 coupling process Methods 0.000 description 2
238000005859 coupling reaction Methods 0.000 description 2
238000002955 isolation Methods 0.000 description 2
230000005055 memory storage Effects 0.000 description 2
239000000203 mixture Substances 0.000 description 2
239000010703 silicon Substances 0.000 description 2
229920000049 Carbon (fiber) Polymers 0.000 description 1
229910000612 Sm alloy Inorganic materials 0.000 description 1
229910021529 ammonia Inorganic materials 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
238000009529 body temperature measurement Methods 0.000 description 1
125000004432 carbon atom Chemical group C* 0.000 description 1
229910002092 carbon dioxide Inorganic materials 0.000 description 1
239000001569 carbon dioxide Substances 0.000 description 1
239000004917 carbon fiber Substances 0.000 description 1
230000008859 change Effects 0.000 description 1
239000007795 chemical reaction product Substances 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
238000009833 condensation Methods 0.000 description 1
230000005494 condensation Effects 0.000 description 1
230000008602 contraction Effects 0.000 description 1
239000013078 crystal Substances 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
230000007423 decrease Effects 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
239000010432 diamond Substances 0.000 description 1
239000003085 diluting agent Substances 0.000 description 1
239000006185 dispersion Substances 0.000 description 1
-1 e.g. Substances 0.000 description 1
238000007772 electroless plating Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
239000002657 fibrous material Substances 0.000 description 1
238000010574 gas phase reaction Methods 0.000 description 1
239000008246 gaseous mixture Substances 0.000 description 1
238000005247 gettering Methods 0.000 description 1
239000011521 glass Substances 0.000 description 1
230000030400 head development Effects 0.000 description 1
239000001307 helium Substances 0.000 description 1
229910052734 helium Inorganic materials 0.000 description 1
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
239000011261 inert gas Substances 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
239000011810 insulating material Substances 0.000 description 1
239000007788 liquid Substances 0.000 description 1
239000000696 magnetic material Substances 0.000 description 1
238000005259 measurement Methods 0.000 description 1
238000000691 measurement method Methods 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
238000005498 polishing Methods 0.000 description 1
239000011241 protective layer Substances 0.000 description 1
238000004439 roughness measurement Methods 0.000 description 1
230000003678 scratch resistant effect Effects 0.000 description 1
238000000926 separation method Methods 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
230000003068 static effect Effects 0.000 description 1
239000010409 thin film Substances 0.000 description 1
239000002023 wood Substances 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/571—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained from Si-containing polymer precursors or organosilicon monomers
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/32—Thermal properties

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Organic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
Metallurgy (AREA)
General Chemical & Material Sciences (AREA)
Mechanical Engineering (AREA)
Ceramic Engineering (AREA)
Inorganic Chemistry (AREA)
Manufacturing & Machinery (AREA)
Structural Engineering (AREA)
Chemical Vapour Deposition (AREA)
Carbon And Carbon Compounds (AREA)
Ceramic Products (AREA)
Manufacturing Of Tubular Articles Or Embedded Moulded Articles (AREA)
Magnetic Record Carriers (AREA)
Manufacturing Of Magnetic Record Carriers (AREA)

IL10641793A 1992-07-31 1993-07-20 High polishing silicon carbide, with high thermal conductivity, preparation method and uses. IL106417A (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US92307792A	1992-07-31	1992-07-31
US07/959,880 US5374412A (en)	1992-07-31	1992-10-13	Highly polishable, highly thermally conductive silicon carbide

Publications (2)

Publication Number	Publication Date
IL106417A0 IL106417A0 (en)	1993-11-15
IL106417A true IL106417A (en)	1996-09-12

Family

ID=27129861

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IL10641793A IL106417A (en)	1992-07-31	1993-07-20	High polishing silicon carbide, with high thermal conductivity, preparation method and uses.

Country Status (9)

Country	Link
US (3)	US5374412A (ja)
EP (1)	EP0588479B1 (ja)
JP (1)	JPH06199513A (ja)
KR (1)	KR970002892B1 (ja)
CA (1)	CA2099833C (ja)
DE (1)	DE69309375T2 (ja)
HK (1)	HK119997A (ja)
IL (1)	IL106417A (ja)
SG (1)	SG52732A1 (ja)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW337513B (en) *	1992-11-23	1998-08-01	Cvd Inc	Chemical vapor deposition-produced silicon carbide having improved properties and preparation process thereof
US6236542B1 (en)	1994-01-21	2001-05-22	International Business Machines Corporation	Substrate independent superpolishing process and slurry
US6077619A (en) *	1994-10-31	2000-06-20	Sullivan; Thomas M.	Polycrystalline silicon carbide ceramic wafer and substrate
US6309766B1 (en)	1994-10-31	2001-10-30	Thomas M. Sullivan	Polycrystalline silicon carbide ceramic wafer and substrate
US5850329A (en) *	1994-10-31	1998-12-15	Sullivan; Thomas Milton	Magnetic recording device components
US5623386A (en) *	1994-10-31	1997-04-22	Sullivan; Thomas M.	Magnetic recording component
US5618594A (en) *	1995-04-13	1997-04-08	Cvd, Incorporated	Composite thermocouple protection tubes
US5923511A (en) *	1995-05-26	1999-07-13	International Business Machines Corporation	Directly contactable disk for vertical magnetic data storage
US5677230A (en) *	1995-12-01	1997-10-14	Motorola	Method of making wide bandgap semiconductor devices
US5584936A (en) *	1995-12-14	1996-12-17	Cvd, Incorporated	Susceptor for semiconductor wafer processing
US5741445A (en)	1996-02-06	1998-04-21	Cvd, Incorporated	Method of making lightweight closed-back mirror
US5683028A (en) *	1996-05-03	1997-11-04	Cvd, Incorporated	Bonding of silicon carbide components
DE19730770C2 (de) *	1996-08-06	2001-05-10	Wacker Chemie Gmbh	Porenfreie Sinterkörper auf Basis von Siliciumcarbid, Verfahren zu ihrer Herstellung und ihre Verwendung als Substrate für Festplattenspeicher
JP2918860B2 (ja) *	1997-01-20	1999-07-12	日本ピラー工業株式会社	鏡面体
JPH1179846A (ja) *	1997-09-01	1999-03-23	Tokai Carbon Co Ltd	炭化珪素成形体
US6063186A (en) *	1997-12-17	2000-05-16	Cree, Inc.	Growth of very uniform silicon carbide epitaxial layers
US6228297B1 (en)	1998-05-05	2001-05-08	Rohm And Haas Company	Method for producing free-standing silicon carbide articles
US6231923B1 (en)	1998-08-17	2001-05-15	Tevtech Llc	Chemical vapor deposition of near net shape monolithic ceramic parts
US6464912B1 (en)	1999-01-06	2002-10-15	Cvd, Incorporated	Method for producing near-net shape free standing articles by chemical vapor deposition
JP2001048649A (ja) *	1999-07-30	2001-02-20	Asahi Glass Co Ltd	炭化ケイ素およびその製造方法
US6699401B1 (en)	2000-02-15	2004-03-02	Toshiba Ceramics Co., Ltd.	Method for manufacturing Si-SiC member for semiconductor heat treatment
US6939821B2 (en) *	2000-02-24	2005-09-06	Shipley Company, L.L.C.	Low resistivity silicon carbide
US7018947B2 (en) *	2000-02-24	2006-03-28	Shipley Company, L.L.C.	Low resistivity silicon carbide
US6560064B1 (en) *	2000-03-21	2003-05-06	International Business Machines Corporation	Disk array system with internal environmental controls
US6797085B1 (en) *	2000-09-28	2004-09-28	Intel Corporation	Metallurgically enhanced heat sink
EP1205573A1 (en) *	2000-11-10	2002-05-15	Shipley Company LLC	Silicon carbide with high thermal conductivity
US8202621B2 (en) *	2001-09-22	2012-06-19	Rohm And Haas Company	Opaque low resistivity silicon carbide
US20040011464A1 (en) *	2002-07-16	2004-01-22	Applied Materials, Inc.	Promotion of independence between degree of dissociation of reactive gas and the amount of ionization of dilutant gas via diverse gas injection
US20040112190A1 (en) *	2002-11-26	2004-06-17	Hollis Michael Chad	Bevel angle locking actuator and bevel angle locking system for a saw
US20040173597A1 (en) *	2003-03-03	2004-09-09	Manoj Agrawal	Apparatus for contacting gases at high temperature
JP4064315B2 (ja) *	2003-08-20	2008-03-19	信越化学工業株式会社	誘導結合プラズマトーチ及び元素分析装置
US20050123713A1 (en) *	2003-12-05	2005-06-09	Forrest David T.	Articles formed by chemical vapor deposition and methods for their manufacture
US20100297350A1 (en)	2003-12-05	2010-11-25	David Thomas Forrest	Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture
DE602005003538T2 (de) *	2004-08-10	2008-10-23	Ibiden Co., Ltd., Ogaki	Brennofen und verfahren zur herstellung von keramischen teilen mit diesem brennofen
US7972441B2 (en) *	2005-04-05	2011-07-05	Applied Materials, Inc.	Thermal oxidation of silicon using ozone
TWI327761B (en) *	2005-10-07	2010-07-21	Rohm & Haas Elect Mat	Method for making semiconductor wafer and wafer holding article
EP1793021A3 (en) *	2005-12-02	2009-01-14	Rohm and Haas Electronic Materials LLC	Method for semiconductor processing using silicon carbide article
US20080000851A1 (en) *	2006-06-02	2008-01-03	Rohm And Haas Electronic Materials Llc	Apparatus with fillet radius joints
US20080007555A1 (en) *	2006-07-10	2008-01-10	Vrba Joseph A	Dynamic plot on plot displays
TWI361469B (en) *	2007-03-09	2012-04-01	Rohm & Haas Elect Mat	Chemical vapor deposited silicon carbide articles
KR101012082B1 (ko) *	2007-06-25	2011-02-07	데이또꾸샤 가부시키가이샤	가열 장치 및 이것을 채용한 기판 처리 장치 및 반도체장치의 제조 방법 및 절연체
JP4523661B1 (ja) *	2009-03-10	2010-08-11	三井造船株式会社	原子層堆積装置及び薄膜形成方法
WO2012047945A2 (en)	2010-10-05	2012-04-12	Silcotek Corp.	Wear resistant coating, article, and method
US8685845B2 (en)	2010-08-20	2014-04-01	International Business Machines Corporation	Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
EP2740815B1 (en) *	2011-08-02	2016-04-13	Shincron Co., Ltd.	Method for forming silicon carbide thin film
US8753985B2 (en) *	2012-01-17	2014-06-17	Applied Materials, Inc.	Molecular layer deposition of silicon carbide
PL2647611T3 (pl) *	2012-04-05	2018-06-29	General Atomics	Złącza o wysokiej trwałości pomiędzy wyrobami ceramicznymi oraz sposób wykonania złącza
CN104619881A (zh) *	2012-08-17	2015-05-13	株式会社Ihi	耐热复合材料的制造方法及制造装置
KR101585924B1 (ko)	2014-02-04	2016-01-18	국방과학연구소	탄화규소 써멀 화학기상증착장치의 가스반응로
US9915001B2 (en)	2014-09-03	2018-03-13	Silcotek Corp.	Chemical vapor deposition process and coated article
US10100409B2 (en) *	2015-02-11	2018-10-16	United Technologies Corporation	Isothermal warm wall CVD reactor
US10876206B2 (en)	2015-09-01	2020-12-29	Silcotek Corp.	Thermal chemical vapor deposition coating
US11161324B2 (en)	2017-09-13	2021-11-02	Silcotek Corp.	Corrosion-resistant coated article and thermal chemical vapor deposition coating process
CN110579105B (zh) *	2018-06-08	2021-06-08	北京北方华创微电子装备有限公司	氧化炉
WO2020252306A1 (en)	2019-06-14	2020-12-17	Silcotek Corp.	Nano-wire growth
KR102104799B1 (ko)	2019-08-13	2020-05-04	주식회사 바이테크	대용량 cvd 장치
KR102297741B1 (ko)	2019-08-28	2021-09-06	주식회사 바이테크	대용량 cvd 장치
US12473635B2 (en)	2020-06-03	2025-11-18	Silcotek Corp.	Dielectric article
CN113479889B (zh) *	2021-08-20	2022-12-09	中电化合物半导体有限公司	一种碳化硅粉料的合成方法
CN117401979B (zh) *	2023-11-02	2024-09-10	湖南德智新材料有限公司	一种制备碳化硅陶瓷材料的方法、应用及碳化硅陶瓷材料

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3549413A (en) *	1969-07-28	1970-12-22	Gen Technologies Corp	Reinforcing filaments comprising coated tungsten wires
US4123989A (en) *	1977-09-12	1978-11-07	Mobil Tyco Solar Energy Corp.	Manufacture of silicon on the inside of a tube
EP0126790B1 (de) *	1983-05-27	1986-09-03	Ibm Deutschland Gmbh	Zusammengesetzte Magnetplatte
US4647494A (en) *	1985-10-31	1987-03-03	International Business Machines Corporation	Silicon/carbon protection of metallic magnetic structures
US4861533A (en) *	1986-11-20	1989-08-29	Air Products And Chemicals, Inc.	Method of preparing silicon carbide capillaries
JPH0222473A (ja) *	1988-07-08	1990-01-25	Sumitomo Metal Mining Co Ltd	セラミック材の製造方法及びその製造用高温反応炉
US4923716A (en) *	1988-09-26	1990-05-08	Hughes Aircraft Company	Chemical vapor desposition of silicon carbide
JP2627792B2 (ja) *	1988-11-22	1997-07-09	日本パイオニクス株式会社	水素ガスの精製装置
JPH02265011A (ja) *	1989-04-06	1990-10-29	Sony Corp	磁気記録媒体
JP2805160B2 (ja) *	1989-06-21	1998-09-30	東洋炭素株式会社	炭素質成形断熱体
US5150507A (en) *	1989-08-03	1992-09-29	Cvd Incorporated	Method of fabricating lightweight honeycomb structures
US5071596A (en) *	1989-10-23	1991-12-10	Cvd Incorporated	Fabrication of lightweight ceramic mirrors by means of a chemical vapor deposition process
US4997678A (en) *	1989-10-23	1991-03-05	Cvd Incorporated	Chemical vapor deposition process to replicate the finish and figure of preshaped structures
US4990374A (en) *	1989-11-28	1991-02-05	Cvd Incorporated	Selective area chemical vapor deposition
JPH03252307A (ja) *	1990-02-27	1991-11-11	Showa Denko Kk	多結晶炭化珪素
US5190890A (en) *	1990-06-04	1993-03-02	Advanced Technology Materials, Inc.	Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates, and method of making the same
US5043773A (en) *	1990-06-04	1991-08-27	Advanced Technology Materials, Inc.	Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates
CA2058809A1 (en) *	1991-01-07	1992-07-08	Jitendra S. Goela	Chemical vapor deposition silicon and silicon carbide having improved optical properties
JPH04258810A (ja) *	1991-02-13	1992-09-14	Sony Corp	磁気記録媒体

1992
- 1992-10-13 US US07/959,880 patent/US5374412A/en not_active Expired - Lifetime
1993
- 1993-07-05 CA CA002099833A patent/CA2099833C/en not_active Expired - Fee Related
- 1993-07-20 IL IL10641793A patent/IL106417A/en not_active IP Right Cessation
- 1993-07-30 EP EP93306023A patent/EP0588479B1/en not_active Expired - Lifetime
- 1993-07-30 KR KR1019930014639A patent/KR970002892B1/ko not_active Expired - Fee Related
- 1993-07-30 SG SG1996008485A patent/SG52732A1/en unknown
- 1993-07-30 DE DE69309375T patent/DE69309375T2/de not_active Expired - Lifetime
- 1993-07-30 JP JP5189696A patent/JPH06199513A/ja active Pending
1994
- 1994-11-17 US US08/340,981 patent/US5465184A/en not_active Expired - Lifetime
1995
- 1995-05-01 US US08/432,342 patent/US5474613A/en not_active Expired - Lifetime
1997
- 1997-06-26 HK HK119997A patent/HK119997A/en not_active IP Right Cessation

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Publication number	Publication date
KR940002164A (ko)	1994-02-16
SG52732A1 (en)	1998-09-28
JPH06199513A (ja)	1994-07-19
IL106417A0 (en)	1993-11-15
EP0588479B1 (en)	1997-04-02
DE69309375T2 (de)	1997-07-10
KR970002892B1 (ko)	1997-03-12
CA2099833A1 (en)	1994-02-01
EP0588479A1 (en)	1994-03-23
CA2099833C (en)	1997-11-25
US5474613A (en)	1995-12-12
US5465184A (en)	1995-11-07
DE69309375D1 (de)	1997-05-07
HK119997A (en)	1997-09-05
US5374412A (en)	1994-12-20

Legal Events

Date	Code	Title
1997-02-18	FF	Patent granted
1997-07-13	KB	Patent renewed
1999-12-31	KB	Patent renewed
2003-10-31	KB	Patent renewed
2008-03-23	MM9K	Patent not in force due to non-payment of renewal fees

Publication	Publication Date	Title
US5474613A (en)	1995-12-12	Chemical vapor deposition furnace and furnace apparatus
CA2099788A1 (en)	1994-02-01	Ultra pure silicon carbide and high temperature semiconductor processing equipment made therefrom
EP0526468B1 (en)	1998-06-17	Diamond-on-a-substrate for electronic applications
CA2120092C (en)	1997-05-20	Triangular deposition chamber for a vapor deposition system
CA2152769C (en)	2001-06-19	Synthesizing diamond film
JP3176614B2 (ja)	2001-06-18	透明なダイヤモンド薄膜およびそれの製造方法
US5286524A (en)	1994-02-15	Method for producing CVD diamond film substantially free of thermal stress-induced cracks
JPH0566358B2 (ja)	1993-09-21
US4123571A (en)	1978-10-31	Method for forming smooth self limiting and pin hole free SiC films on Si
CA2173676A1 (en)	1997-09-19	Diamond film deposition
JP2002265296A (ja)	2002-09-18	ダイヤモンド薄膜及びその製造方法
EP0868718B1 (en)	2000-01-05	Ceramic wafers and thin film magnetic heads
US4604292A (en)	1986-08-05	X-ray mask blank process
Papasouliotis et al.	1995	Gravimetric investigation of the deposition of SiC films through decomposition of methyltrichlorosilane
Haigis et al.	1993	Monolithic β SiC parts produced by CVD
JP4615644B2 (ja)	2011-01-19	化学蒸着による精密な再現法
Goela et al.	2001	Chemical-vapor-deposited materials for high thermal conductivity applications
Goela et al.	1992	Postdeposition Process for Improving Optical Properties of Chemical‐Vapor‐Deposited Silicon
JPH05270820A (ja)	1993-10-19	アルミナ粉末ならびにそれを使用した焼結体およびその製造法
JP2719664B2 (ja)	1998-02-25	黒鉛製ウエハ保持治具
EP0888213A1 (en)	1999-01-07	Diamond film deposition
Farabaugh et al.	1989	Effects of Different CH4-H2 Gas Compositions on the Morphology and Growth of Diamond Grown by Hot Filament CVD
JPS63227783A (ja)	1988-09-22	気相成長用トレ−及び気相成長方法
JPH04352678A (ja)	1992-12-07	黒鉛製ウエハ保持治具
Papasouliotis et al.	1995	TECHNICAL PAPERS SOLID-STATE SCIENCE AND TECHNOLOGY