ITMI991424A0 - Componente mosfet per la commutazione di correnti elevate - Google Patents

Componente mosfet per la commutazione di correnti elevate

Info

Publication number
ITMI991424A0
ITMI991424A0 IT99MI001424A ITMI991424A ITMI991424A0 IT MI991424 A0 ITMI991424 A0 IT MI991424A0 IT 99MI001424 A IT99MI001424 A IT 99MI001424A IT MI991424 A ITMI991424 A IT MI991424A IT MI991424 A0 ITMI991424 A0 IT MI991424A0
Authority
IT
Italy
Prior art keywords
high current
current switching
mosfet component
mosfet
component
Prior art date
Application number
IT99MI001424A
Other languages
English (en)
Inventor
Neil Davies
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of ITMI991424A0 publication Critical patent/ITMI991424A0/it
Publication of ITMI991424A1 publication Critical patent/ITMI991424A1/it
Application granted granted Critical
Publication of IT1312521B1 publication Critical patent/IT1312521B1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
IT1999MI001424A 1998-06-26 1999-06-25 Componente mosfet per la commutazione di correnti elevate IT1312521B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19828494A DE19828494B4 (de) 1998-06-26 1998-06-26 MOSFET-Bauelement mit Schutzvorrichtung gegen Durchschalten eines parasitären Transistors

Publications (3)

Publication Number Publication Date
ITMI991424A0 true ITMI991424A0 (it) 1999-06-25
ITMI991424A1 ITMI991424A1 (it) 2000-12-25
IT1312521B1 IT1312521B1 (it) 2002-04-17

Family

ID=7872090

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999MI001424A IT1312521B1 (it) 1998-06-26 1999-06-25 Componente mosfet per la commutazione di correnti elevate

Country Status (5)

Country Link
US (1) US6281549B1 (it)
JP (1) JP2000031471A (it)
DE (1) DE19828494B4 (it)
FR (1) FR2784231B1 (it)
IT (1) IT1312521B1 (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4070485B2 (ja) * 2001-05-09 2008-04-02 株式会社東芝 半導体装置
US7851872B2 (en) * 2003-10-22 2010-12-14 Marvell World Trade Ltd. Efficient transistor structure
US7091565B2 (en) * 2003-10-22 2006-08-15 Marvell World Trade Ltd. Efficient transistor structure
US7960833B2 (en) * 2003-10-22 2011-06-14 Marvell World Trade Ltd. Integrated circuits and interconnect structure for integrated circuits
JP4630207B2 (ja) * 2006-03-15 2011-02-09 シャープ株式会社 半導体装置
JP5700649B2 (ja) * 2011-01-24 2015-04-15 旭化成エレクトロニクス株式会社 半導体装置の製造方法
US9761494B2 (en) * 2012-05-07 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method of forming the same
JP5920407B2 (ja) * 2013-07-16 2016-05-18 株式会社デンソー 半導体装置
US20160233662A1 (en) * 2015-02-06 2016-08-11 Mathew Inskeep Jump Starter Auto Safety Jumper Module
JP2016174030A (ja) 2015-03-16 2016-09-29 株式会社東芝 半導体装置
KR102495452B1 (ko) 2016-06-29 2023-02-02 삼성전자주식회사 반도체 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3412297A (en) * 1965-12-16 1968-11-19 United Aircraft Corp Mos field-effect transistor with a onemicron vertical channel
IT1133869B (it) * 1979-10-30 1986-07-24 Rca Corp Dispositivo mosfet
JPS5688363A (en) 1979-12-20 1981-07-17 Nec Corp Field effect transistor
US4803532A (en) * 1982-11-27 1989-02-07 Nissan Motor Co., Ltd. Vertical MOSFET having a proof structure against puncture due to breakdown
JPH01140773A (ja) * 1987-11-27 1989-06-01 Hitachi Ltd 絶縁ゲート形トランジスタ
EP0841702A1 (en) 1996-11-11 1998-05-13 STMicroelectronics S.r.l. Lateral or vertical DMOSFET with high breakdown voltage
DE19725091B4 (de) * 1997-06-13 2004-09-02 Robert Bosch Gmbh Laterales Transistorbauelement und Verfahren zu seiner Herstellung
JPH1174517A (ja) * 1997-08-29 1999-03-16 Matsushita Electric Works Ltd 半導体装置
JP3120389B2 (ja) 1998-04-16 2000-12-25 日本電気株式会社 半導体装置
JP3522532B2 (ja) 1998-05-07 2004-04-26 富士電機デバイステクノロジー株式会社 半導体装置

Also Published As

Publication number Publication date
US6281549B1 (en) 2001-08-28
ITMI991424A1 (it) 2000-12-25
JP2000031471A (ja) 2000-01-28
IT1312521B1 (it) 2002-04-17
DE19828494B4 (de) 2005-07-07
FR2784231B1 (fr) 2005-09-02
DE19828494A1 (de) 2000-01-13
FR2784231A1 (fr) 2000-04-07

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