JP2000212730A - Thin film forming device - Google Patents

Thin film forming device

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Publication number
JP2000212730A
JP2000212730A JP11015109A JP1510999A JP2000212730A JP 2000212730 A JP2000212730 A JP 2000212730A JP 11015109 A JP11015109 A JP 11015109A JP 1510999 A JP1510999 A JP 1510999A JP 2000212730 A JP2000212730 A JP 2000212730A
Authority
JP
Japan
Prior art keywords
electrode
vapor
crucible
thin film
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11015109A
Other languages
Japanese (ja)
Inventor
Kazuo Nishihara
一夫 西原
Shoko Yamauchi
省更 山内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP11015109A priority Critical patent/JP2000212730A/en
Publication of JP2000212730A publication Critical patent/JP2000212730A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To vacuum-deposit a vapor depositing material on the face to be vapor-deposited to an optional pattern by arranging a forcusing electrode, an acceleration controlling electrode and a deflecting electrode on the space between an electrode in a crucible and an electrifying electrode in the face to be vapor-deposited in a vacuum device. SOLUTION: In an electrode 1 in a crucible having fine pores, a vapor depositing material is evaporated, the pressure at the inside is controlled to the relatively high one, it is blown off from the small pores, is ionized by using a grid 3 and a heat cathode for ionization in the following chamger, is made into the shape of a finer beam by a forcusing electrode 8 and is deflected by deflecting electrodes A, A', B and B', and an optional pattern is crashed into the face 10 to be vapor-deposited to form a thin film.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明が属する技術分野】本発明は、被蒸着面に複数の
蒸着材料を任意の文様に複数層蒸着可能な薄膜製造装置
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film manufacturing apparatus capable of vapor-depositing a plurality of vapor-deposited materials on a surface to be vapor-deposited in a desired pattern.

【0002】[0002]

【従来の技術】真空装置の中で、被蒸着面は、坩堝内電
極と帯電電極との間に加速電極を挟んで実用に共されて
いる。実用の被蒸着面は、坩堝内電極の蒸着材料を均一
に蒸着させなければならず、坩堝内電極面と被蒸着面と
の間隔は余裕を持たせたものである。真空装置には通常
坩堝内電極と被蒸着面との間隔は、加速電極の均一蒸着
効果のためには余裕をもたせてあったが、大規模薄膜製
造装置のため、複数回蒸着するには蒸着装置を複数設備
追加するのみで実用上十分であった。
2. Description of the Related Art In a vacuum apparatus, a surface to be vapor-deposited is commonly used with an accelerating electrode interposed between an electrode in a crucible and a charging electrode. In a practical deposition surface, the deposition material for the electrode in the crucible must be uniformly deposited, and the space between the electrode surface in the crucible and the deposition surface has a margin. In vacuum equipment, the space between the electrode in the crucible and the surface to be deposited is usually given a margin for the uniform deposition effect of the accelerating electrode. It was practically sufficient to add a plurality of devices.

【0003】しかし、小規模薄膜製造装置などに供する
ときには、複数層の蒸着を実現するためには、薄膜製造
装置の坩堝内電極の蒸着材料を交換する必要がある。薄
膜製造装置の真空度を十分に確保するには蒸着装置の筐
体の面積が大きくなり、また真空度を十分に確保するに
は時間がかかるという欠点があった。
However, when a thin film manufacturing apparatus is used, it is necessary to exchange the evaporation material of the electrode in the crucible of the thin film manufacturing apparatus in order to realize the deposition of a plurality of layers. In order to ensure a sufficient degree of vacuum in the thin film manufacturing apparatus, the area of the casing of the vapor deposition apparatus becomes large, and it takes time to ensure the degree of vacuum sufficiently.

【0004】薄膜製造装置を一般の屋内で使用する用途
において、この筐体の面積が大きくなるという欠点は設
置場所の選択に関して大きな障害である。具体的には、
不必要な場所をとり、真空度を十分に確保するには真空
装置の防音対策に苦慮し、真空装置の消費電力の増大
や、あるいは、坩堝内電極の蒸着材料の恒温に時間を要
し蒸着面の色の混合の安定化がはかれないなどの問題が
あった。
[0004] In applications where the thin film manufacturing apparatus is used indoors in general, the disadvantage that the area of the housing becomes large is a major obstacle to the selection of the installation location. In particular,
To take an unnecessary place and to secure a sufficient degree of vacuum, struggle with soundproofing of the vacuum device, increase the power consumption of the vacuum device, or take time to maintain the temperature of the deposition material of the electrode in the crucible. There was a problem that the mixing of the surface colors could not be stabilized.

【0005】この改善策として、被蒸着面の色の混合の
安定化などの問題は恒温に十分に時間をかけて、又、真
空度を向上させるには真空装置を大型化して対処する方
法がある。図3はこの方法による薄膜製造装置の実装形
態を示すための説明図であって、真空蒸着面に対して直
角な平面による断面図である。図3で、10は被蒸着
面、1は坩堝内電極の蒸着材料、11は真空装置であ
る。しかしこの方法でも、多層の真空蒸着の実装のため
無視できない多層の回数分の交換時間を十分に確保する
必要がある。
[0005] As a remedy, there is a method of stabilizing the mixing of colors on the surface to be vaporized by taking sufficient time for constant temperature, and increasing the degree of vacuum by increasing the size of a vacuum apparatus. is there. FIG. 3 is an explanatory view showing a mounting mode of a thin film manufacturing apparatus according to this method, and is a cross-sectional view taken on a plane perpendicular to a vacuum deposition surface. In FIG. 3, reference numeral 10 denotes a surface to be vapor-deposited, 1 denotes a vapor deposition material for an electrode in a crucible, and 11 denotes a vacuum device. However, even in this method, it is necessary to secure a sufficient exchange time for the number of times of the number of multilayers that cannot be ignored due to the implementation of the multilayer vacuum deposition.

【0006】[0006]

【発明が解決しようとする課題】解決しようとする問題
点は、被蒸着面自身が必要層を同一工程で真空蒸着でき
ない点である。
The problem to be solved is that the surface to be deposited itself cannot vacuum deposit the necessary layers in the same process.

【0007】[0007]

【課題を解決するための手段】本発明は、真空装置内に
配置した坩堝内電極の蒸着材料と被蒸着面の基板(母
材)の帯電電極との間に集束電極と加速制御電極及び偏
向電極を配置し、任意の文様に複数層蒸着出来ることを
最も主要な特徴とする。
SUMMARY OF THE INVENTION The present invention provides a focusing electrode, an acceleration control electrode, and a deflection electrode between a deposition material of an electrode in a crucible disposed in a vacuum apparatus and a charging electrode of a substrate (base material) on a deposition surface. The most important feature is that electrodes are arranged and a plurality of layers can be deposited in an arbitrary pattern.

【0008】[0008]

【発明の実施の形態】ハウジング外または可能な限り筐
体の厚みを減少し軽量化に勤め、最小の部品点数で、構
成部品の性能を損なわずに実現した。
BEST MODE FOR CARRYING OUT THE INVENTION The present invention has been realized by reducing the thickness of the housing or the housing as much as possible to reduce the weight and to minimize the number of parts without impairing the performance of the components.

【0009】[0009]

【実施例】図1は、本発明装置の実施例の平面図であっ
て、図2は薄膜製造装置の偏向電極部の断面部を示す、
図4は薄膜製造装置の複合製造装置であり、大部屋の6
集束加速電極と8集束電極及び9加速制御電極と偏向電
極A、A’とB、B’の間にそれぞれ、1坩堝内電極と
3帯電電極であるイオン化グリッド、4熱陰極及び5加
速電極をもった複数の小部屋で対をなす電極を複数持ち
複合の薄膜を製造するのである。
FIG. 1 is a plan view of an embodiment of the apparatus of the present invention, and FIG. 2 shows a cross section of a deflection electrode section of a thin film manufacturing apparatus.
FIG. 4 shows a combined manufacturing apparatus of a thin film manufacturing apparatus,
Between the focusing accelerating electrode, the 8 focusing electrodes, the 9 accelerating control electrodes, and the deflecting electrodes A, A 'and B, B', respectively, one electrode in the crucible and three ionizing grids as charging electrodes, four hot cathodes and five accelerating electrodes are provided. A composite thin film is manufactured by having a plurality of pairs of electrodes in a plurality of small rooms.

【0010】小さい穴をもった1坩堝内電極の中で蒸着
材料を蒸発させ内部を比較的高圧にして、小さい穴から
吹き出させてこれを次の部屋で3イオン化用グリッドと
4熱陰極を用いてイオン化し、8集束電極でより細いビ
ーム状にし偏向電極A、A’とB、B’で偏向して任意
の模様を10被蒸着面に激突させて薄膜を作るものであ
る。本発明の主体は工学系の実装方法にあるので、電
子、機構系の説明は省略する。
[0010] The vapor deposition material is evaporated in one crucible electrode having a small hole to make the inside relatively high in pressure, and is blown out from the small hole. Then, the beam is made thinner by the eight focusing electrodes, deflected by the deflecting electrodes A and A 'and B and B', and an arbitrary pattern is made to collide with the surface to be vapor-deposited to form a thin film. Since the subject of the present invention lies in the mounting method of the engineering system, the description of the electronic and mechanical systems is omitted.

【0011】一般に蒸着速度は単位面積からの蒸発速度
は、下記の数式1によって求まるということが数学
的にすでにわかっている、また半値幅は数2で近似的に
表されて下記に数式を示す。
In general, it has been mathematically known that the evaporation rate m 0 from the unit area can be obtained by the following equation (1), and the half width is approximately expressed by the following equation (2). Is shown.

【0012】[0012]

【数1】 (Equation 1)

【0013】[0013]

【数2】 (Equation 2)

【0014】上記の数式において、示したように、Pは
蒸気圧、Mは分子量、Tは気体の温度で、Rは偏向電極
A、A’とB、B’と直角に交差した蒸発電子の偏向距
離でrはラーマ半径である。
In the above formulas, as shown, P is the vapor pressure, M is the molecular weight, T is the temperature of the gas, and R is the deflection electrodes A, A ', B', and B ' In the deflection distance, r 0 is the Rama radius.

【0015】このような工学系の実装形態を採用したの
で、真空蒸着製造上の特性を実効的に劣化することな
く、1坩堝電極から蒸着材料を10基板に任意のイメー
ジで蒸着できる。従って、製造には蒸着試料蒸発ブロッ
クの切り替えと偏向電極A、A’とB、B’で偏向して
任意の模様を10被蒸着面に作成でき、蒸着位置または
その近傍への位置決めが容易になる。さらに、真空容器
11の容量を減少させることができ、製造設備、特にク
リーンルームの設備が小型化でき電力や製造時間の短縮
などの効果がある。
Since such an engineering mounting mode is adopted, a vapor deposition material can be vapor-deposited on an arbitrary number of substrates from one crucible electrode to ten substrates without effectively deteriorating characteristics in vacuum vapor deposition. Therefore, in the production, an arbitrary pattern can be formed on the surface to be vapor-deposited by switching the vapor-deposition sample evaporation block and deflecting by the deflection electrodes A, A 'and B, B', and the positioning at the vapor deposition position or in the vicinity thereof can be easily performed. Become. Furthermore, the capacity of the vacuum vessel 11 can be reduced, and the manufacturing equipment, especially the clean room equipment, can be reduced in size, which has the effect of reducing power and manufacturing time.

【0016】図4の実施例は、真空容器に取付けた蒸着
試料蒸発ブロックを蒸着層の必要分設置し、切り替える
ことによって蒸着層を多層に蒸着できるので、例えば透
明電極を最初に蒸着し次に誘電膜、絶縁膜などの順に製
造する場合は蒸着試料蒸発ブロックを蒸着材料順に各々
切替えて使用する。蒸着の精度を確保するためには、真
空容器の真空度の良いことが要となるので、この切替え
機能は薄膜製造の操作性向上と製造対象の拡大におおい
に役立つ。
In the embodiment shown in FIG. 4, the vapor deposition layer can be vapor-deposited in multiple layers by installing and switching the vapor deposition sample vapor block attached to the vacuum vessel as needed, so that, for example, a transparent electrode is vapor-deposited first and then When manufacturing the dielectric film, the insulating film, and the like in this order, the evaporation sample evaporation blocks are switched and used in the order of the evaporation material. In order to ensure the accuracy of vapor deposition, it is necessary that the degree of vacuum in the vacuum vessel is good, so this switching function is useful for improving the operability of thin film production and expanding the range of production targets.

【0017】[0017]

【発明の効果】本発明は、以上説明したように構成され
ているので、以下に記載されるような効果を奏する。薄
膜製造装置は多層の真空蒸着の実装のための切り替えも
多層の回数分の交換時間も同一蒸着装置内の坩堝内電極
の切り替えだけの短時間で可能であり、また、偏向電極
の操作によって任意の模様を蒸着可能で小規模の薄膜製
造装置で大規模施設同様に簡単に製造出来る。
Since the present invention is configured as described above, it has the following effects. The thin film manufacturing equipment can be switched for mounting vacuum evaporation of multiple layers and the exchange time for the number of multilayers can be done in a short time just by switching the electrodes in the crucible in the same evaporation apparatus, and it can be set as desired by operating the deflection electrode The pattern can be deposited, and it can be easily manufactured with a small-scale thin-film manufacturing equipment like a large-scale facility.

【図面の簡単な説明】[Brief description of the drawings]

【図1】薄膜製造装置の実施方法を示した説明図であ
る。(実施例1)
FIG. 1 is an explanatory view showing a method for implementing a thin film manufacturing apparatus. (Example 1)

【図2】薄膜製造装置の偏向電極部の断面部を示した説
明図である。
FIG. 2 is an explanatory diagram showing a cross section of a deflection electrode unit of the thin film manufacturing apparatus.

【図3】従来の薄膜製造装置の実施方法を示した説明図
である。
FIG. 3 is an explanatory view showing a method for implementing a conventional thin film manufacturing apparatus.

【図4】薄膜の複合製造装置の実施方法を示した説明図
である。(実施例2)
FIG. 4 is an explanatory view showing a method for implementing a composite manufacturing apparatus for a thin film. (Example 2)

【図5】薄膜製造装置の偏向集束部を示した説明図であ
る。(実施例3)
FIG. 5 is an explanatory diagram showing a deflection focusing unit of the thin film manufacturing apparatus. (Example 3)

【符号の説明】[Explanation of symbols]

1 坩堝電極 2 ヒーター 3 イオン化用グリッド 4 熱陰極 5 加速電極 6 集束加速電極 7 イオンビーム 8 集束電極 9 加速制御電極 10 基板 11 真空容器 12 偏向信号 13 偏向信号 A,A’ 偏向電極 B,B’ 偏向電極 C 蒸着試料加熱小部屋 D イオン化小部屋 Cn 蒸着試料蒸発ブロック DESCRIPTION OF SYMBOLS 1 Crucible electrode 2 Heater 3 Ionization grid 4 Hot cathode 5 Acceleration electrode 6 Focusing acceleration electrode 7 Ion beam 8 Focusing electrode 9 Acceleration control electrode 10 Substrate 11 Vacuum container 12 Deflection signal 13 Deflection signal A, A 'Deflection electrode B, B' Deflection electrode C Evaporation sample heating small room D Ionization small room Cn Evaporation sample evaporation block

───────────────────────────────────────────────────── フロントページの続き (72)発明者 山内 省更 東京都大田区大森北1丁目11番18−505 Fターム(参考) 4K029 BB02 BB03 CA03 DD04  ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Shoichi Yamauchi 1-118-505, Omorikita, Ota-ku, Tokyo F-term (reference) 4K029 BB02 BB03 CA03 DD04

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 真空装置内に配置した坩堝内電極と被蒸
着面の帯電電極との間に集束電極と加速制御電極及び偏
向電極を配置し、任意の文様に蒸着材料を被蒸着面に真
空蒸着出来ることを特徴とする薄膜製造装置。
1. A focusing electrode, an acceleration control electrode, and a deflection electrode are arranged between an electrode in a crucible arranged in a vacuum device and a charging electrode on a surface to be vapor-deposited. Thin film production equipment characterized by being capable of vapor deposition.
【請求項2】 坩堝内電極と集束電極及び加速制御電極
を1対として複数配置し、任意の坩堝内電極の蒸着材料
を被蒸着面に複数層蒸着出来ることを特徴とする薄膜製
造装置。
2. An apparatus for manufacturing a thin film, wherein a plurality of electrodes in a crucible, a focusing electrode, and an acceleration control electrode are arranged as a pair, and a plurality of layers of an evaporation material for an arbitrary electrode in a crucible can be deposited on a surface to be deposited.
【請求項3】 坩堝内電極の接地電極と集束電極及び加
速制御電極により、坩堝内蒸着材料を細いビーム状に集
束出来ることを特徴とする薄膜製造装置。
3. A thin film manufacturing apparatus characterized in that a vapor deposition material in a crucible can be focused in a narrow beam shape by a ground electrode, a focusing electrode, and an acceleration control electrode of electrodes in the crucible.
JP11015109A 1999-01-25 1999-01-25 Thin film forming device Pending JP2000212730A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11015109A JP2000212730A (en) 1999-01-25 1999-01-25 Thin film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11015109A JP2000212730A (en) 1999-01-25 1999-01-25 Thin film forming device

Publications (1)

Publication Number Publication Date
JP2000212730A true JP2000212730A (en) 2000-08-02

Family

ID=11879676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11015109A Pending JP2000212730A (en) 1999-01-25 1999-01-25 Thin film forming device

Country Status (1)

Country Link
JP (1) JP2000212730A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006057117A (en) * 2004-08-17 2006-03-02 Ishikawajima Harima Heavy Ind Co Ltd Combinatorial device manufacturing equipment
CN108103453A (en) * 2017-12-25 2018-06-01 浙江工业大学 A kind of surface graded film preparation device of covering type based on ball valve
CN111699276A (en) * 2017-12-06 2020-09-22 亚利桑那薄膜研究有限责任公司 Additive manufacturing system and method for deposition of metal and ceramic materials
CN117385319A (en) * 2023-09-12 2024-01-12 宁波大学 A method for preparing ten-micron amorphous chalcogenide thin films for superlenses

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006057117A (en) * 2004-08-17 2006-03-02 Ishikawajima Harima Heavy Ind Co Ltd Combinatorial device manufacturing equipment
CN111699276A (en) * 2017-12-06 2020-09-22 亚利桑那薄膜研究有限责任公司 Additive manufacturing system and method for deposition of metal and ceramic materials
JP2021505776A (en) * 2017-12-06 2021-02-18 アリゾナ・シン・フィルム・リサーチ・エルエルシー Systems and methods for additive manufacturing for the adhesion of metal and ceramic materials
EP3720984A4 (en) * 2017-12-06 2021-09-01 Arizona Thin Film Research LLC SYSTEMS AND PROCESSES FOR GENERATIVE MANUFACTURING FOR THE DEPOSITION OF METAL AND CERAMIC MATERIALS
CN108103453A (en) * 2017-12-25 2018-06-01 浙江工业大学 A kind of surface graded film preparation device of covering type based on ball valve
CN117385319A (en) * 2023-09-12 2024-01-12 宁波大学 A method for preparing ten-micron amorphous chalcogenide thin films for superlenses

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